Works matching DE "METAL semiconductor field-effect transistors"
Results: 353
MoS<sub>2</sub> Transistor with Weak Fermi Level Pinning via MXene Contacts.
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- Advanced Functional Materials, 2022, v. 32, n. 43, p. 1, doi. 10.1002/adfm.202204288
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- Article
High Performance β‐Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Transistors with Large Work Function TMD Gate of NbS<sub>2</sub> and TaS<sub>2</sub>.
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- Advanced Functional Materials, 2021, v. 31, n. 21, p. 1, doi. 10.1002/adfm.202010303
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High‐Gain Chemically Gated Organic Electrochemical Transistor.
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- Advanced Functional Materials, 2021, v. 31, n. 19, p. 1, doi. 10.1002/adfm.202010868
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Tuning the Transconductance of Organic Electrochemical Transistors.
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- Advanced Functional Materials, 2021, v. 31, n. 3, p. 1, doi. 10.1002/adfm.202004939
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Measurement of Electrophysiological Signals In Vitro Using High‐Performance Organic Electrochemical Transistors.
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- Advanced Functional Materials, 2021, v. 31, n. 1, p. 1, doi. 10.1002/adfm.202007086
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- Article
InSe Schottky Diodes Based on Van Der Waals Contacts.
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- Advanced Functional Materials, 2020, v. 30, n. 24, p. 1, doi. 10.1002/adfm.202001307
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- Article
Measurement of electrical conductivity of condensed substances in shock waves (Review).
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- Combustion, Explosion, & Shock Waves, 2011, v. 47, n. 4, p. 375, doi. 10.1134/S0010508211040010
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- Article
АНАЛІЗ РОБОТИ ДВОКОНТУРНОГО АВТОГЕНЕРАТОРНОГО ВИХРОСТРУМОВОГО ДЕФЕКТОСКОПА В РЕЖИМІ ПЕРЕРИВЧАСТОЇ ГЕНЕРАЦІЇ
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- Technical Diagnostics & Nondestructive Testing / Tekhnicheskaya Diagnostika I Nerazrushayushchiy Kontrol, 2022, n. 2, p. 24, doi. 10.37434/tdnk2022.02.04
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- Article
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406
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- Article
Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101377
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- Article
Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000074
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- Article
Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901289
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- Article
Inkjet‐Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate‐Tunable Diodes.
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- Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201901068
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- Article
Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900548
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- Article
A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO<sub>3</sub>‐Based Memory Cell.
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- Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800062
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- Article
Metal-semiconductor phase transition in transplanted thin polycrystalline vanadium dioxide films.
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- Technical Physics Letters, 2013, v. 39, n. 6, p. 566, doi. 10.1134/S1063785013060163
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- Article
Degradation processes induced by nonstationary electric signals in metallization systems on silicon.
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- Technical Physics Letters, 2006, v. 32, n. 9, p. 762, doi. 10.1134/S1063785006090082
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- Article
Effect of electric field on photoinduced changes in the optical properties of chalcogenide glassy semiconductors.
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- Technical Physics Letters, 2006, v. 32, n. 1, p. 45, doi. 10.1134/S1063785006010159
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- Article
Stability of Quasi-Ballistic MESFETs with Various Buffer Layer Structures under Irradiation with Neutrons Possessing Different Energy Spectra.
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- Technical Physics Letters, 2005, v. 31, n. 10, p. 881, doi. 10.1134/1.2121846
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- Article
The Effect of Hydrogenation on the Sink Breakdown Voltage of Transistors Based on Ion-Doped Gallium Arsenide Structures.
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- Technical Physics Letters, 2003, v. 29, n. 1, p. 12, doi. 10.1134/1.1544334
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- Article
A 30-nm-Gate Field-Effect Transistor.
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- Technical Physics Letters, 2000, v. 26, n. 5, p. 408, doi. 10.1134/1.1262860
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- Article
Changes in the Characteristics of Semiconductor Structures of Microwave Amplifiers under the Action of Pulsed Laser Radiation.
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- Technical Physics, 2024, v. 69, n. 3, p. 638, doi. 10.1134/S1063784224020257
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- Article
A comparative study on the self-heating effect of ion-implanted MESFETs.
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- International Journal of Electronics Letters, 2021, v. 9, n. 4, p. 424, doi. 10.1080/21681724.2020.1789757
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- Article
Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate.
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- Advances in Materials Science & Engineering, 2014, p. 1, doi. 10.1155/2014/290646
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- Article
Design and Optimization of Novel Shaped FinFET.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2019, v. 44, n. 4, p. 3101, doi. 10.1007/s13369-018-3428-3
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- Article
Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/ f Noise Measurements.
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- Radiophysics & Quantum Electronics, 2005, v. 48, n. 3, p. 240, doi. 10.1007/s11141-005-0064-z
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- Article
Suitability of thin-GaN for AlGaN/GaN HEMT material and device.
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- Journal of Materials Science, 2022, v. 57, n. 10, p. 5913, doi. 10.1007/s10853-022-07017-x
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- Article
Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets.
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- Electrical Engineering, 2023, v. 105, n. 5, p. 2781, doi. 10.1007/s00202-023-01848-w
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- Article
Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures.
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- Russian Physics Journal, 2012, v. 55, n. 2, p. 180, doi. 10.1007/s11182-012-9792-7
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- Article
InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics.
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- Technical Physics Letters, 2019, v. 45, n. 11, p. 1092, doi. 10.1134/S1063785019110075
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- Article
Novel quantum‐dot cellular automata implementation of flip‐flop and phase‐frequency detector based on nand‐nor‐inverter gates.
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- International Journal of Circuit Theory & Applications, 2021, v. 49, n. 1, p. 196, doi. 10.1002/cta.2825
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- Article
In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 625, doi. 10.1002/pssr.201409124
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One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 9, p. 605, doi. 10.1002/pssr.201307259
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- Article
Photocatalysis: Constructing a Metallic/Semiconducting TaB<sub>2</sub>/Ta<sub>2</sub>O<sub>5</sub> Core/Shell Heterostructure for Photocatalytic Hydrogen Evolution (Adv. Energy Mater. 12/2014).
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- Advanced Energy Materials, 2014, v. 4, n. 12, p. n/a, doi. 10.1002/aenm.201470061
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- Article
DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS.
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- Surface Review & Letters, 2007, v. 14, n. 4, p. 765, doi. 10.1142/S0218625X07010226
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- Article
High-temperature device performance and thermal characteristics of GaAs MESFETs on CVD diamond substrates.
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- Quality & Reliability Engineering International, 2000, v. 16, n. 6, p. 527, doi. 10.1002/1099-1638(200011/12)16:6<527::AID-QRE360>3.0.CO;2-0
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- Article
LOW FREQUENCY NOISE ANALYSIS TO DETECT THE INFLUENCE OF DEEP LEVELS IN AlGaAs/GaAs HEMTs.
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- Quality & Reliability Engineering International, 1992, v. 8, n. 3, p. 301, doi. 10.1002/qre.4680080321
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- Article
DEGRADATION MECHANISMS IN 2 W MESFETs.
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- Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 343, doi. 10.1002/qre.4680070422
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- Article
DEGRADATION OF ION IMPLANTED GaAs MESFETs.
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- Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 339, doi. 10.1002/qre.4680070421
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- Article
RELIABILITY AND FAILURE ANALYSIS OF GaAs MESFETs ON GaAs AND Si SUBSTRATES.
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- Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 323, doi. 10.1002/qre.4680070419
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- Article
New Component Derating Study.
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- Quality & Reliability Engineering International, 1991, v. 7, n. 3, p. 192
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- Article
A novel broadband VHF SiC MESFET class-E high power amplifier.
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- Microwave & Optical Technology Letters, 2010, v. 52, n. 2, p. 272, doi. 10.1002/mop.24922
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- Article
Modeling of diamond field-effect transistors for RF IC development.
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- Microwave & Optical Technology Letters, 2009, v. 51, n. 11, p. 2783, doi. 10.1002/mop.24734
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Microwave operation of sub-micrometer gate surface channel MESFETs in polycrystalline diamond.
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- Microwave & Optical Technology Letters, 2009, v. 51, n. 11, p. 2786, doi. 10.1002/mop.24738
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- Article
Retro-directive array with beam steering capability, made by coupled, self-oscillating mixers.
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- Microwave & Optical Technology Letters, 2007, v. 49, n. 6, p. 1303, doi. 10.1002/mop.22447
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A high-efficiency class-E power amplifier using SiC MESFET.
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- Microwave & Optical Technology Letters, 2007, v. 49, n. 6, p. 1447, doi. 10.1002/mop.22455
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- Article
Analytical model for the transconductance of microwave Al<sub>m</sub>Ga<sub>1-m</sub>N/GaN HEMTs including nonlinear macroscopic polarization and parasitic MESFET conduction.
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- Microwave & Optical Technology Letters, 2007, v. 49, n. 2, p. 382, doi. 10.1002/mop.22126
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MESFET two-dimensional nonlinear current model extraction for Volterra-series analysis.
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- Microwave & Optical Technology Letters, 2004, v. 41, n. 6, p. 461, doi. 10.1002/mop.20171
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A WATT-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology.
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- Microwave & Optical Technology Letters, 2004, v. 41, n. 5, p. 346, doi. 10.1002/mop.20137
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A uniplanar picosecond impulse generator based on MESFET and SRD.
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- Microwave & Optical Technology Letters, 2003, v. 39, n. 6, p. 470, doi. 10.1002/mop.11250
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