Works matching IS 03615235 AND DT 2007 AND VI 36 AND IP 4

Results: 44

Optimization of High-Quality AIN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 533, doi. 10.1007/s11664-007-0099-3

By:

Xi, Y. A.;
Chen, K. X.;
Mont, F.;
Kim, J. K.;
Schubert, E. F.;
Wetzel, C.;
Liu, W.;
Li, X.;
Smart, J. A.

Publication type:

Article

Magnetic Properties of Fe-Implanted ZnO Nanotips Grown by Metal-Organic Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 529, doi. 10.1007/s11664-007-0110-z

By:

Wu, P.;
Saraf, G.;
Lu, Y.;
Hill, D. H.;
Arena, D. A.;
Bartynski, R. A.;
Cosandey, F.;
Al-Sharab, J. F.;
Wielunski, L.;
Gateau, R.;
Dvorak, J.;
Moodenbaugh, A.;
Raley, J. A.;
Yung Kee Yeo

Publication type:

Article

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 436, doi. 10.1007/s11664-006-0086-0

By:

Kai Qiu;
Li, X. H.;
Zhong, F.;
Yin, Z. J.;
Luo, X. D.;
Ji, C. J.;
Han, Q. F.;
Chen, J. R.;
Cao, X. C.;
Xie, X. J.;
Wang, Y. Q.

Publication type:

Article

Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 332, doi. 10.1007/s11664-006-0084-2

By:

Dhanaraj, Govindhan;
Yi Chen;
Hui Chen;
Dang Cai;
Hui Zhang;
Dudley, Michael

Publication type:

Article

Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 312, doi. 10.1007/s11664-006-0083-3

By:

Mohammad, F. A.;
Cao, Y.;
Porter, L. M.

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 267, doi. 10.1007/s11664-006-0082-4

By:

Stahlbush, Robert;
Jena, Debdeep;
Phillips, Jamie

Publication type:

Article

Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 483, doi. 10.1007/s11664-006-0081-5

By:

Avrutin, V.;
Özgür, Ü.;
Chevtchenko, S.;
Litton, C.;
Morkoc, H.

Publication type:

Article

Effects of Illumination on Ar+-Implanted n-Type 6H-SiC Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 340, doi. 10.1007/s11664-006-0080-6

By:

Evwaraye, A. O.;
Smith, S. R.;
Mitchel, W. C.;
Capano, M. A.

Publication type:

Article

Bias-Dependent Ultraviolet Photodetection by Au-Mg0.1Zn0.9O/ZnO-Ag Structure.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 524, doi. 10.1007/s11664-006-0079-z

By:

Mridha, S.;
Ghosh, R.;
Basak, D.

Publication type:

Article

Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 277, doi. 10.1007/s11664-006-0078-0

By:

Gao, M.;
Tsukimoto, S.;
Goss, S. H.;
Tumakha, S. P.;
Onishi, T.;
Murakami, M.;
Brillson, L. J.

Publication type:

Article

Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [1120]- and [0001]-Oriented Silicon Carbide Substrates.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 285, doi. 10.1007/s11664-006-0076-2

By:

Bishop, S. M.;
Reynolds Jr., C. L.;
Liliental-Weber, Z.;
Uprety, Y.;
Zhu, J.;
Wang, D.;
Park, M.;
Molstad, J. C.;
Barnhardt, D. E.;
Shrivastava, A.;
Sudarshan, T. S.;
Davis, R. F.

Publication type:

Article

The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 272, doi. 10.1007/s11664-006-0075-3

By:

Kung-Yen Lee;
Capano, Michael A.

Publication type:

Article

Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 403, doi. 10.1007/s11664-006-0074-4

By:

Takizawa, Toshiyuki;
Shimizu, Jun;
Ueda, Tetsuzo

Publication type:

Article

Compositional Study of Copper-Germanium Ohmic Contact to n-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 420, doi. 10.1007/s11664-006-0073-5

By:

Schuette, Michael L.;
Wu Lu

Publication type:

Article

Comparison of GaN and In0.04Ga0.96 N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 426, doi. 10.1007/s11664-006-0072-6

By:

Limb, J. B.;
Lee, W.;
Ryou, J.-H.;
Yoo, D.;
Dupuis, R. D.

Publication type:

Article

Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 397, doi. 10.1007/s11664-006-0070-8

By:

Green, R. T.;
Tan, W. S.;
Houston, P. A.;
Wang, T.;
Parbrook, P. J.

Publication type:

Article

Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 353, doi. 10.1007/s11664-006-0069-1

By:

Dongwon Yoo;
Jae Boum Limb;
Jae-Hyun Ryou;
Wonseok Lee;
Dupuis, Russell D.

Publication type:

Article

Zinc Oxide Nanorods Grown by Arc Discharge.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 494, doi. 10.1007/s11664-006-0068-2

By:

Zhu, G. P.;
Xu, C. X.;
Wu, X. F.;
Yang, Y.;
Sun, X. W.;
Cui, Y. P.

Publication type:

Article

Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 442, doi. 10.1007/s11664-006-0063-7

By:

Claflin, B.;
Look, D. C.;
Norton, D. R.

Publication type:

Article

Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 409, doi. 10.1007/s11664-006-0061-9

By:

Alivov, Y. I.;
Özgür, Ü.;
Gu, X.;
Liu, C.;
Moon, Y.;
Morkoç, H.;
Lopatiuk, O.;
Chernyak, L.;
Litton, C. W.

Publication type:

Article

Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 297, doi. 10.1007/s11664-006-0059-3

By:

Liu, Kendrick X.;
Stahlbush, Robert E.;
Twigg, Mark E.;
Caldwell, Joshua D.;
Glaser, Evan R.;
Hobart, Karl D.;
Kub, Francis J.

Publication type:

Article

Epitaxial Growth and Characterization of p-Type ZnO.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 457, doi. 10.1007/s11664-006-0056-6

By:

Pan, M.;
Nause, J.;
Rengarajan, V.;
Rondon, R.;
Park, E. H.;
Ferguson, I. T.

Publication type:

Article

Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 346, doi. 10.1007/s11664-006-0055-7

By:

Weng, X.;
Acord, J. D.;
Jain, A.;
Dickey, E. C.;
Redwing, J. M.

Publication type:

Article

Annealing and Measurement Temperature Dependence of W2B- and W2B2-Based Rectifying Contacts to p-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 384, doi. 10.1007/s11664-006-0054-8

By:

Voss, L. F.;
Stafford, L.;
Thaler, G. T.;
Abernathy, C. R.;
Pearton, S. J.;
Chen, J.-J.;
Ren, F.

Publication type:

Article

Tri-Buffer Process: A New Approach to Obtain High-Quality ZnO Epitaxial Films on Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 452, doi. 10.1007/s11664-006-0053-9

By:

Mei, Z. X.;
Du, X. L.;
Wang, Y.;
Ying, M. J.;
Zeng, Z. Q.;
Yuan, H. T.;
Jia, J. F.;
Xue, Q. K.;
Zhang, Z.

Publication type:

Article

Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1-xO (0 ≤ x ≤ 0.3) Films.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 446, doi. 10.1007/s11664-006-0052-x

By:

Saraf, Gaurav;
Jian Zhong;
Dulub, Olga;
Diebold, Ulrike;
Siegrist, Theo;
Yicheng Lu

Publication type:

Article

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 472, doi. 10.1007/s11664-006-0051-y

By:

Kennedy, J.;
Markwitz, A.;
Trodahl, H. J.;
Ruck, B. J.;
Durbin, S. M.;
Gao, W.

Publication type:

Article

Nanopatterned Contacts to GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 359, doi. 10.1007/s11664-006-0050-z

By:

Ho Gyoung Kim;
Deb, Parijat;
Sands, Tim

Publication type:

Article

Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 498, doi. 10.1007/s11664-006-0047-7

By:

Yang, L. L.;
Ye, Z. Z.;
Zhu, L. P.;
Zeng, Y. J.;
Lu, Y. F.;
Zhao, B. H.

Publication type:

Article

The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 507, doi. 10.1007/s11664-006-0046-8

By:

Schuler, Leo P.;
Valanoor, Nagarajan;
Miller, Paul;
Guy, Ian;
Reeves, Roger J.;
Alkaisi, Maan M.

Publication type:

Article

The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 431, doi. 10.1007/s11664-006-0045-9

By:

Lee, K.;
Myers, T. H.

Publication type:

Article

X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 414, doi. 10.1007/s11664-006-0044-x

By:

Dalmau, R.;
Collazo, R.;
Mita, S.;
Sitar, Z.

Publication type:

Article

Identification of a Three-Site Defect in Semi-Insulating 4H-SiC.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 268, doi. 10.1007/s11664-006-0043-y

By:

Garces, N. Y.;
Carlos, W. E.;
Glaser, E. R.;
Fanton, M. A.

Publication type:

Article

Effect of Temperature on Structural and Morphologic Properties of ZnO Films Annealed in Ammonia Ambient.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 502, doi. 10.1007/s11664-006-0042-z

By:

Shoubin Xue;
Huizhao Zhuang;
Chengshan Xue;
Lijun Hu;
Baoli Li;
Shiying Zhang

Publication type:

Article

Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 373, doi. 10.1007/s11664-006-0041-0

By:

Dimakis, E.;
Iliopoulos, E.;
Kayambaki, M.;
Tsagaraki, K.;
Kostopoulos, A.;
Konstantinidis, G.;
Georgakilas, A.

Publication type:

Article

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 391, doi. 10.1007/s11664-006-0040-1

By:

Hite, J. K.;
Frazier, R. M.;
Davies, R. P.;
Thaler, G. T.;
Abernathy, C. R.;
Pearton, S. J.;
Zavada, J. M.;
Brown, E.;
Hömmerich, U.

Publication type:

Article

Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 488, doi. 10.1007/s11664-006-0039-7

By:

Wright, J. S.;
Stafford, L.;
Gila, B. P.;
Norton, D. P.;
Pearton, S. J.;
Hung-Ta Wang;
Ren, F.

Publication type:

Article

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 318, doi. 10.1007/s11664-006-0038-8

By:

Caldwell, Joshua D.;
Liu, Kendrick X.;
Tadjer, Marko J.;
Glembocki, Orest J.;
Stahlbush, Robert E.;
Hobart, Karl D.;
Kub, Fritz

Publication type:

Article

Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 368, doi. 10.1007/s11664-006-0037-9

By:

Chen, J.-J.;
Hlad, M.;
Gerger, A. P.;
Gila, B. P.;
Ren, F.;
Abernathy, C. R.;
Pearton, S. J.

Publication type:

Article

Improved Long-Term Thermal Stability At 350°C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 379, doi. 10.1007/s11664-006-0036-x

By:

Khanna, Rohit;
Stafford, L.;
Pearton, S. J.;
Anderson, T. J.;
Ren, F.;
Kravchenko, I. I.;
Dabiran, Amir;
Osinsky, A.;
Joon Yeob Lee;
Kwan-Young Lee;
Jihyun Kim

Publication type:

Article

Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 519, doi. 10.1007/s11664-006-0035-y

By:

Allums, K. K.;
Hlad, M.;
Gerger, A. P.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Dwivedi, R.;
Fogarty, T. N.;
Wilkins, R.

Publication type:

Article

Ferromagnetism in Transition-Metal Doped ZnO.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 462, doi. 10.1007/s11664-006-0034-z

By:

Pearton, S. J.;
Norton, D. P.;
Ivill, M. P.;
Hebard, A. F.;
Zavada, J. M.;
Chen, W. M.;
Buyanova, I. A.

Publication type:

Article

Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 324, doi. 10.1007/s11664-006-0032-1

By:

Sundaresan, Siddarth G.;
Rao, Mulpuri V.;
Yonglai Tian;
Schreifels, John A.;
Wood, Mark C.;
Jones, Kenneth A.;
Davydov, Albert V.

Publication type:

Article

Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 307, doi. 10.1007/s11664-006-0031-2

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D. C.;
Farlow, G. C.

Publication type:

Article