Works matching IS 03615235 AND DT 2006 AND VI 35 AND IP 7
Results: 16
High-Pressure Preparation and Thermoelectric Properties of Bi<sub>0.85</sub>Sb<sub>0.15</sub>.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. L7, doi. 10.1007/s11664-006-0155-4
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Microstructure, Creep Properties, and Failure Mechanism of SnAgCu Solder Joints.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1600, doi. 10.1007/s11664-006-0154-5
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Investigation of Electroless Cobalt-Phosphorous Layer and Its Diffusion Barrier Properties of Pb-Sn Solder.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1593, doi. 10.1007/s11664-006-0153-6
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Intermetallic Growth Kinetics for Sn-Ag, Sn-Cu, and Sn-Ag-Cu Lead-Free Solders on Cu, Ni, and Fe-42Ni Substrates.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1581, doi. 10.1007/s11664-006-0152-7
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Durable Electrochromic Coatings Prepared from Electronically Conductive Poly(3HT-co-3TPP)-Silica Hybrid Materials.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1571, doi. 10.1007/s11664-006-0151-8
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Intermetallic Compounds Formed During Diffusion Soldering of Au/Cu/Al<sub>2</sub>O<sub>3</sub> and Cu/Ti/Si with Sn/In Interlayer.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1566, doi. 10.1007/s11664-006-0150-9
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Interfacial Adhesion of Spin-Coated Thin Adhesive Film on Silicon Substrate for the Fabrication of Polymer Optical Waveguide.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1558, doi. 10.1007/s11664-006-0149-2
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Influence of Substrate Temperature on the Properties of Fluorinated Silicon-Nitride Thin Films Deposited by IC-RPECVD.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1552
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Annealing Effect on the dc Transport Mechanism in Dysprosium Oxide Films Grown on Si Substrates.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1547, doi. 10.1007/s11664-006-0147-4
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Structural Defects in Si-Doped III-V Nitrides.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1543, doi. 10.1007/s11664-006-0146-5
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Three-Dimensional Analysis of the Interface Between an Sn-8wt.%Zn-3wt.%Bi Solder and a Substrate by Using an Angle-Lapping Method.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1537, doi. 10.1007/s11664-006-0145-6
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Effect of Flux on the Wetting Characteristics of SnAg, SnCu, SnAgBi, and SnAgCu Lead-Free Solders on Copper Substrates.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1530, doi. 10.1007/s11664-006-0144-7
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Influence of Bias-Temperature Stressing on the Electrical Characteristics of SiOC:H Film with Cu/TaN/Ta-Gated Capacitor.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1523, doi. 10.1007/s11664-006-0143-8
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Lead-Free Solder Reinforced with Multiwalled Carbon Nanotubes.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1518, doi. 10.1007/s11664-006-0142-9
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Seeded Growth of AIN Crystals on Nonpolar Seeds via Physical Vapor Transport.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1513, doi. 10.1007/s11664-006-0141-x
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p-n Junctions in Silicon Nanowires.
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- Journal of Electronic Materials, 2006, v. 35, n. 7, p. 1509, doi. 10.1007/s11664-006-0140-y
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