Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 4

Results: 25

Modification of 4H-SiC and 6H-SiC(0001)Si Surfaces through the Interaction with Atomic Hydrogen and Nitrogen.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 457, doi. 10.1007/s11664-005-0127-0

By:

Losurdo, Maria;
Giangregorio, Maria M.;
Capezzuto, Pio;
Bruno, Giovanni;
Brown, April S.;
Tong-Ho Kim;
Changhyun Yi

Publication type:

Article

Fabrication and Characterization of 4H-SiC P-N Junction Diodes by Selective-Epitaxial Growth Using TaC as the Mask.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 450, doi. 10.1007/s11664-005-0126-1

By:

Li, C.;
Losee, P.;
Seiler, J.;
Bhat, I.;
Chow, T. P.

Publication type:

Article

A Magnetotransport Study of AlGaN/GaN Heterostructures on Silicon.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 444, doi. 10.1007/s11664-005-0125-2

By:

Elhamri, S.;
Mitchel, W. C.;
Mitchell, W. D.;
Berney, R.;
Ahoujja, M.;
Roberts, J. C.;
Rajagopal, P.;
Gehrke, T.;
Piner, E. L.;
Linthicum, K. J.

Publication type:

Article

Preparation of Ultrasmooth and Defect-Free 4H-SiC(0001) Surfaces by Elastic Emission Machining.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 439, doi. 10.1007/s11664-005-0124-3

By:

Kubota, Akihisa;
Mimura, Hidekazu;
Inagaki, Kouji;
Arima, Kenta;
Mori, Yuzo;
Yamauchi, Kazuto

Publication type:

Article

Characteristics of 6H-Silicon Carbide PIN Diodes Prototyping by Laser Doping.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 430, doi. 10.1007/s11664-005-0123-4

By:

Tian, Z.;
Quick, N. R.;
Kar, A.

Publication type:

Article

Crystal Quality of InN Thin Films Grown on ZnO Substrate by Radio-Frequency Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 424, doi. 10.1007/s11664-005-0122-5

By:

Ohuchi, Satoru;
Takizawa, Toshiyuki

Publication type:

Article

Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 416, doi. 10.1007/s11664-005-0121-6

By:

Dong, J. W.;
Osinsky, A.;
Hertog, B.;
Dabiran, A. M.;
Chow, P. P.;
Heo, Y. W.;
Norton, D. P.;
Pearton, S. J.

Publication type:

Article

Properties of Phosphorus-Doped (Zn,Mg)O Thin Films and Device Structures.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 409, doi. 10.1007/s11664-005-0120-7

By:

Heo, Y. W.;
Kwon, Y. W.;
Li, Y.;
Pearton, S. J.;
Norton, D. P.

Publication type:

Article

Fabrication Approaches to ZnO Nanowire Devices.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 404, doi. 10.1007/s11664-005-0119-0

By:

LaRoche, J. R.;
Heo, Y. W.;
Kang, B. S.;
Tien, L. C.;
Kwon, Y.;
Norton, D. P.;
Gila, B. P.;
Ren, F.;
Pearton, S. J.

Publication type:

Article

Shallow Donor Generation in ZnO by Remote Hydrogen Plasma.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 399, doi. 10.1007/s11664-005-0118-1

By:

Strzhemechny, Yuri M.;
Mosbacker, Howard L.;
Goss, Stephen H.;
Look, David C.;
Reynolds, Donald C.;
Litton, Cole W.;
Garces, Nelson Y.;
Giles, Nancy C.;
Halliburton, Larry E.;
Niki, Shigeru;
Brillson, Leonard J.

Publication type:

Article

Proton Irradiation of ZnO Schottky Diodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 395, doi. 10.1007/s11664-005-0117-2

By:

Khanna, Rohit;
Ip, K.;
Allums, K. K.;
Baik, K.;
Abernathy, C. R.;
Pearton, S. J.;
Heo, Y. W.;
Norton, D. P.;
Ren, F.;
Shojah-Ardalan, S.;
Wilkins, R.

Publication type:

Article

Properties of Electrical Contacts on Bulk and Epitaxial n-Type ZnO.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 389, doi. 10.1007/s11664-005-0116-3

By:

Murphy, T. E.;
Blaszczak, J. O.;
Moazzami, K.;
Bowen, W. E.;
Phillips, J. D.

Publication type:

Article

Cross-Polarization Imaging and Micro-Raman Detection of Defects in the Epitaxy of 4H-SiC.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 382, doi. 10.1007/s11664-005-0115-4

By:

Glembocki, O. J.;
Prokes, S. M.;
Stahlbush, R. F.;
MacMillan, M. F.

Publication type:

Article

Environmental Sensitivity of Au Diodes on n-AlGaN.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 375, doi. 10.1007/s11664-005-0114-5

By:

Readinger, E. D.;
Mohney, S. E.

Publication type:

Article

Design of Edge Termination for GaN Power Schottky Diodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 370, doi. 10.1007/s11664-005-0113-6

By:

Laroche, J. R.;
Ren, F.;
Baik, K. W.;
Pearton, S. J.;
Shelton, B. S.;
Peres, B.

Publication type:

Article

AIN-Based Dilute Magnetic Semiconductors.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 365, doi. 10.1007/s11664-005-0112-7

By:

Frazier, R. M.;
Thaler, G. T.;
Gila, B. P.;
Stapleton, J.;
Overberg, M. E.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Zavada, J. M.

Publication type:

Article

Superior Suppression of Gate Current Leakage in Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 361, doi. 10.1007/s11664-005-0111-8

By:

Wang, C. X.;
Maeda, N.;
Hiroki, M.;
Tawara, T.;
Makimoto, T.;
Kobayahsi, T.;
Enoki, T.

Publication type:

Article

Microstructure and Enhanced Morphology of Planar Nonpolar m-Plane GaN Grown by Hydride Vapor Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 357, doi. 10.1007/s11664-005-0110-9

By:

Haskell, Benjamin A.;
Chakraborty, Arpan;
Feng Wu;
Sasano, Hideo;
Fini, Paul T.;
Denbaars, Steven P.;
Speck, James S.;
Nakamura, Shuji

Publication type:

Article

Planar Defects in 4H-SiC PiN Diodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 351, doi. 10.1007/s11664-005-0109-2

By:

Twigg, M. E.;
Stahlbush, R. E.;
Irvine, K. G.;
Sumakeris, J. J.;
Chow, T. P.;
Lossee, P. A.;
Zhu, L.

Publication type:

Article

SiC Field-Effect Devices Operating at High Temperature.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 345, doi. 10.1007/s11664-005-0108-3

By:

Ghosh, Ruby N.;
Tobias, Peter

Publication type:

Article

Drift-Free 10-kV, 20-A 4H-SiC PiN Diodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 341, doi. 10.1007/s11664-005-0107-4

By:

Hull, Brett A.;
Das, Mrinal K.;
Sumakeris, Joseph J.;
Richmond, James T.;
Krishnaswami, Sumi

Publication type:

Article

Thermally Stimulated Current Spectroscopy of High-Purity Semi-Insulating 4H-SiC Substrates.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 336, doi. 10.1007/s11664-005-0106-5

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D. C.;
Polenta, L.;
Mitchel, W. C.

Publication type:

Article

Influence of Low-Field-Mobility-Related Issues on SiC Metal-Semiconductor Field-Effect Transistor Performance.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 330, doi. 10.1007/s11664-005-0105-6

By:

Ho-Young Cha;
Choi, Y. C.;
Eastman, L. F.;
Spencer, M. G.;
Ardaravicius, L.;
Matulionis, A.;
Kiprijanovic, O.

Publication type:

Article

Fast Epitaxial Growth of High-Purity 4H-SiC(0001) in a Vertical Hot-Wall Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 324, doi. 10.1007/s11664-005-0104-7

By:

Danno, Katsunori;
Kimoto, Tsunenobu;
Asano, Katsunori;
Sugawara, Yoshitaka;
Matsunami, Hiroyuki

Publication type:

Article

Investigation of Longitudinal-Optical Phonon-Plasmon Coupled Modes in SiC Epitaxial Film Using Fourier Transform Infrared Reflection.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 320, doi. 10.1007/s11664-005-0103-8

By:

Sunkari, Swapna;
Mazzola, M. S.;
Mazzola, J. P.;
Das, Hrishikesh;
Wyatt, J. L.

Publication type:

Article

Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 4

Modification of 4H-SiC and 6H-SiC(0001)<sub>Si</sub> Surfaces through the Interaction with Atomic Hydrogen and Nitrogen.

Fabrication and Characterization of 4H-SiC P-N Junction Diodes by Selective-Epitaxial Growth Using TaC as the Mask.

A Magnetotransport Study of AlGaN/GaN Heterostructures on Silicon.

Preparation of Ultrasmooth and Defect-Free 4H-SiC(0001) Surfaces by Elastic Emission Machining.

Characteristics of 6H-Silicon Carbide PIN Diodes Prototyping by Laser Doping.

Crystal Quality of InN Thin Films Grown on ZnO Substrate by Radio-Frequency Molecular Beam Epitaxy.

Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications.

Properties of Phosphorus-Doped (Zn,Mg)O Thin Films and Device Structures.

Fabrication Approaches to ZnO Nanowire Devices.

Shallow Donor Generation in ZnO by Remote Hydrogen Plasma.

Proton Irradiation of ZnO Schottky Diodes.

Properties of Electrical Contacts on Bulk and Epitaxial n-Type ZnO.

Cross-Polarization Imaging and Micro-Raman Detection of Defects in the Epitaxy of 4H-SiC.

Environmental Sensitivity of Au Diodes on n-AlGaN.

Design of Edge Termination for GaN Power Schottky Diodes.

AIN-Based Dilute Magnetic Semiconductors.

Superior Suppression of Gate Current Leakage in Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors.

Microstructure and Enhanced Morphology of Planar Nonpolar m-Plane GaN Grown by Hydride Vapor Phase Epitaxy.

Planar Defects in 4H-SiC PiN Diodes.

SiC Field-Effect Devices Operating at High Temperature.

Drift-Free 10-kV, 20-A 4H-SiC PiN Diodes.

Thermally Stimulated Current Spectroscopy of High-Purity Semi-Insulating 4H-SiC Substrates.

Influence of Low-Field-Mobility-Related Issues on SiC Metal-Semiconductor Field-Effect Transistor Performance.

Fast Epitaxial Growth of High-Purity 4H-SiC(0001) in a Vertical Hot-Wall Chemical Vapor Deposition.

Investigation of Longitudinal-Optical Phonon-Plasmon Coupled Modes in SiC Epitaxial Film Using Fourier Transform Infrared Reflection.