Works matching DE "AVALANCHE photodiodes"
Results: 263
Ultra‐Large Bandwidth and Ultra‐High Sensitivity Germanium/Silicon Avalanche Photodiode.
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- Laser & Photonics Reviews, 2025, v. 19, n. 5, p. 1, doi. 10.1002/lpor.202401574
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Development of High-Speed Photon Counting Module Based on Passive Quenching Mode Multi-pixel Photon Counter.
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- Instruments & Experimental Techniques, 2024, v. 67, n. 6, p. 1143, doi. 10.1134/S002044122470194X
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EMPIRICAL FORMULAE FOR EXCESS NOISE FACTOR WITH DEAD SPACE FOR SINGLE CARRIER MULTIPLICATION.
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- Fluctuation & Noise Letters, 2011, v. 10, n. 3, p. 315, doi. 10.1142/S0219477511000600
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NOISE CHARACTERISTIC AND QUALITY INVESTIGATION OF ULTRAFAST AVALANCHE PHOTODIODES.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 3, p. L379
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Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide.
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- Journal of Engineering Physics & Thermophysics, 2003, v. 76, n. 1, p. 197, doi. 10.1023/A:1022956400985
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Physical modelling of InGaAs-InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications.
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- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 40, doi. 10.1049/iet-opt.2018.5030
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High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00409-3
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Repeated γ irradiation and thermal annealing via built-in thermo-electric coolers of Si avalanche photodiodes.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-72535-4
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Characterization of a 10-MHz quadrant APD for measuring frequency oscillations and tip displacements of microcantilevers.
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- Applied Physics B: Lasers & Optics, 2012, v. 109, n. 1, p. 127, doi. 10.1007/s00340-012-5162-y
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Analysis of Active Semiconductor Components Effective Numerical Models of the in the Optical Communication Systems.
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- Indian Journal of Public Health Research & Development, 2018, v. 9, n. 3, p. 485, doi. 10.5958/0976-5506.2018.00332.7
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Remote Colorimetric and Structural Diagnosis by RGB-ITR Color Laser Scanner Prototype.
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- Advances in Optical Technologies, 2012, p. 1, doi. 10.1155/2012/512902
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A Johann-type X-ray emission spectrometer at the Rossendorf beamline.
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- Journal of Synchrotron Radiation, 2016, v. 23, n. 3, p. 836, doi. 10.1107/S1600577516004483
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Pulse-resolved multi-photon X-ray detection at 31 MHz based on a quadrant avalanche photodiode.
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- Journal of Synchrotron Radiation, 2014, v. 21, n. 4, p. 708, doi. 10.1107/S1600577514006730
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A Geiger-mode avalanche photodiode array for X-ray photon correlation spectroscopy.
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- Journal of Synchrotron Radiation, 2009, v. 16, n. 1, p. 105, doi. 10.1107/S0909049508034365
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Coding to Enhance Performance of Amplified Optical Communication Systems in the Presence of Noise Components of Optical Devices and Channel Interference.
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- Journal of Active & Passive Electronic Devices, 2012, v. 7, n. 4, p. 285
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Performance analysis of amplify-decode-and-forward multihop binary phase-shift keying/free-space optical systems using avalanche photodiode receivers over atmospheric turbulence channels.
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- IET Communications (Wiley-Blackwell), 2014, v. 8, n. 9, p. 1518, doi. 10.1049/iet-com.2013.0422
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Cryptographic robustness of practical quantum cryptography: BB84 key distribution protocol.
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- Journal of Experimental & Theoretical Physics, 2008, v. 107, n. 1, p. 28, doi. 10.1134/S1063776108070030
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Impact-ionization-engineered avalanche photodiode arrays for freespace optical communication.
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- Optical Engineering, 2016, v. 55, n. 11, p. 111609-1, doi. 10.1117/1.OE.55.11.111609
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Design and performance testing of an avalanche photodiode receiver with multiplication gain control algorithm for intersatellite laser communication.
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- Optical Engineering, 2016, v. 55, n. 6, p. 1, doi. 10.1117/1.OE.55.6.067109
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Monolithically integrated avalanche photodiode receiver in 0.35 µm bipolar complementary metal oxide semiconductor.
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- Optical Engineering, 2015, v. 54, n. 11, p. 1, doi. 10.1117/1.OE.54.11.110502
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Thick detection zone single-photon avalanche diode fabricated in 0.35 µm complementary metal-oxide semiconductors.
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- Optical Engineering, 2015, v. 54, n. 5, p. 1, doi. 10.1117/1.OE.54.5.050503
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Comparison of waveguide avalanche photodiodes with InP and InAIAs multiplication layer for 25 Gb/s operation.
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- Optical Engineering, 2014, v. 53, n. 4, p. 1, doi. 10.1117/1.OE.53.4.046106
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Avalanche photodiode with high responsivity in 0.35 µm CMOS.
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- Optical Engineering, 2014, v. 53, n. 4, p. 1, doi. 10.1117/1.OE.53.4.043105
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Proton radiation damage effects on the response of high speed communication avalanche photodiodes.
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- Optical Engineering, 2013, v. 52, n. 1, p. 014003-1, doi. 10.1117/1.OE.52.1.014003
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Design of a high sensitivity emitter-detector avalanche photodiode imager using very high transmittance, back-illuminated, silicon-on-sapphire.
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- Optical Engineering, 2012, v. 51, n. 6, p. 1, doi. 10.1117/1.OE.51.6.063206
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10-Gbps electroabsorptive modulated laser bidirectional optical subassembly using novel two-window flat package for passive optical network.
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- Optical Engineering, 2011, v. 50, n. 12, p. 1, doi. 10.1117/1.3662417
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New code for spectral-amplitude coding optical code-division multiple-access system using avalanche and phase intensity–induced noise photodiodes.
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- Optical Engineering, 2008, v. 47, n. 10, p. 105001, doi. 10.1117/1.3002338
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InP-based single-photon detector arrays with asynchronous readout integrated circuits.
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- Optical Engineering, 2008, v. 47, n. 10, p. 100502, doi. 10.1117/1.2992138
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Receiver architectures for the detection of spatially correlated optical field using avalanche photodiode detector arrays.
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- Optical Engineering, 2008, v. 47, n. 2, p. 25008, doi. 10.1117/1.2870110
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Onlinefähige Signalauswertung für spektraloptische Sensoren mit einer Doppelphotodiode / Online-capable signal processing for spectral-optical sensors using a double-layered photodiode.
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- Technisches Messen, 2019, v. 86, p. 37, doi. 10.1515/teme-2019-0048
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The Miniaturized Electron pRoton Telescope onboard CeREs and CUSP CubeSats.
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- Geophysical Research Abstracts, 2019, v. 21, p. 1
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Investigation and analysis of time response in Geiger mode avalanche photodiode.
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- Optica Applicata, 2010, v. 40, n. 2, p. 471
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Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1579, doi. 10.1007/s11664-009-0684-8
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Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1790, doi. 10.1007/s11664-009-0802-7
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HgCdTe p-on- n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1684, doi. 10.1007/s11664-009-0794-3
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Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1628, doi. 10.1007/s11664-009-0827-y
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High-Operating-Temperature HgCdTe Avalanche Photodiodes.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1707, doi. 10.1007/s11664-009-0823-2
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Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1764, doi. 10.1007/s11664-008-0542-0
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Avalanche Mechanism in p<sup>+</sup>-n<sup>-</sup>-n<sup>+</sup> and p<sup>+</sup> -n Mid-Wavelength Infrared Hg<sub>1-x</sub>Cd<sub>x</sub>Te Diodes on Si Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1488, doi. 10.1007/s11664-008-0518-0
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Impulse Response Time Measurements in Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te MWIR Avalanche Photodiodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1261, doi. 10.1007/s11664-008-0459-7
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Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1303, doi. 10.1007/s11664-008-0449-9
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A Theoretical Model for the HgCdTe Electron Avalanche Photodiode.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1453, doi. 10.1007/s11664-008-0439-y
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Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1376, doi. 10.1007/s11664-008-0420-9
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Numerical and experimental study of meandering electrode for photodiode bandwidth enhancement.
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- Optical & Quantum Electronics, 2024, v. 56, n. 8, p. 1, doi. 10.1007/s11082-024-07233-6
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High-speed and low dark current InGaAs/InAlAs avalanche photodiodes with P-type absorption layers.
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- Optical & Quantum Electronics, 2023, v. 55, n. 5, p. 1, doi. 10.1007/s11082-023-04615-0
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Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers.
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- Optical & Quantum Electronics, 2023, v. 55, n. 2, p. 1, doi. 10.1007/s11082-022-04400-5
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Performance analysis of near-earth, lunar and interplanetary optical communication links.
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- Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-03987-z
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Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes.
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- Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-03931-1
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Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes.
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- Optical & Quantum Electronics, 2021, v. 53, n. 10, p. 1, doi. 10.1007/s11082-021-03213-2
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High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity.
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- Optical & Quantum Electronics, 2021, v. 53, n. 6, p. 1, doi. 10.1007/s11082-021-02915-x
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- Article