Works matching DE "TUNNEL field-effect transistors"
Results: 262
Exploring performance characteristics via edge configuration in black phosphorene TFETs.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 5, p. 1, doi. 10.1142/S021797922540048X
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- Article
Exploring the Potential of Tunnel Field-Effect Transistors in Biomedical Devices: A Comprehensive Survey.
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- IETE Journal of Research, 2025, v. 71, n. 1, p. 247, doi. 10.1080/03772063.2024.2412790
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- Article
FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design.
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- Discover Nano, 2024, p. 1, doi. 10.1186/s11671-024-04096-4
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- Article
Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04036-2
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- Article
Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03878-6
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- Article
A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03875-9
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- Article
Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03816-6
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2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00352-2
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- Article
Low leakage pocket junction-less DGTFET with biosensing cavity region.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 4, p. 2466, doi. 10.3906/elk-1807-186
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- Article
A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior.
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- Active & Passive Electronic Components, 2021, p. 1, doi. 10.1155/2021/8919283
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- Article
Examining the design characteristics of a dual-material gate all-around tunnel FET for use in biosensing applications.
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- Zeitschrift für Physikalische Chemie, 2024, v. 238, n. 3, p. 531, doi. 10.1515/zpch-2023-0476
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- Article
Influence of Triple Material on Performance Study of Double Gate PiN Tunneling Graphene Nanoribbon FET for Low Power Logic Applications.
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 3, p. 03020-1, doi. 10.21272/jnep.13(3).03020
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- Article
Model of Tunneling Current on Bilayer Armchair Graphene Nanoribbon Tunnel Field Effect Transistor Using Transfer Matrix Method.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03036
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- Article
Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 1, p. 01030-1, doi. 10.21272/jnep.9(1).01030
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- Article
Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses.
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- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03690-8
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- Article
ISTFA 2019 HIGHLIGHTS.
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- 2020
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- Publication type:
- Proceeding
Graphene antidot nanoribbon tunnel field‐effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2022, v. 17, n. 8, p. 169, doi. 10.1049/mna2.12107
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- Article
TCAD simulation of a double L-shaped gate tunnel field-effect transistor with a covered source-channel.
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- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 4, p. 272, doi. 10.1049/mnl.2019.0398
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- Article
Analysis of kink reduction and reliability issues in low-voltage DTD-based SOI TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 3, p. 130, doi. 10.1049/mnl.2019.0427
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- Article
Effect of ITCs on gate stacked JL-TFET based on work-function engineering.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 12, p. 1238, doi. 10.1049/mnl.2019.0252
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- Article
Analysis of interface trap charges on performance variation in L-shaped tunnel field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 11, p. 1140, doi. 10.1049/mnl.2019.0129
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- Article
A comparative investigation of low work-function metal implantation in the oxide region for improving electrostatic characteristics of charge plasma TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 2, p. 123, doi. 10.1049/mnl.2018.5390
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- Article
Investigation of RF and linearity performance of electrode work-function engineered HDB vertical TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 1, p. 17, doi. 10.1049/mnl.2018.530
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- Article
Approach to suppress ambipolar conduction in Tunnel FET using dielectric pocket.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 1, p. 86, doi. 10.1049/mnl.2018.5276
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- Article
Approach for the improvement of sensitivity and sensing speed of TFET-based biosensor by using plasma formation concept.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 12, p. 1728, doi. 10.1049/mnl.2018.5252
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- Article
Physics-based capacitance model of Gate-on-Source/Channel SOI TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 12, p. 1672, doi. 10.1049/mnl.2018.5214
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- Article
Impact of gate material engineering on ED-TFET for improving DC/analogue-RF/linearity performances.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 12, p. 1653, doi. 10.1049/mnl.2018.5131
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- Article
Hetero-material CPTFET with high-frequency and linearity analysis for ultra-low power applications.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 11, p. 1609, doi. 10.1049/mnl.2018.5075
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- Article
Effective approach to enhance DC and high-frequency performance of electrically doped TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 10, p. 1469, doi. 10.1049/mnl.2018.5072
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- Article
Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 8, p. 1165, doi. 10.1049/mnl.2017.0877
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- Article
Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 8, p. 1192, doi. 10.1049/mnl.2017.0869
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- Article
Approach to suppress ambipolarity and improve RF and linearity performances on ED-Tunnel FET.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 5, p. 684, doi. 10.1049/mnl.2017.0814
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- Article
Deep insight into linearity and NQS parameters of tunnel FET with emphasis on lateral straggle.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 1, p. 35, doi. 10.1049/mnl.2017.0326
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- Article
Analysis of trap-assisted tunnelling in asymmetrical underlap 3D-cylindrical GAA-TFET based on hetero-spacer engineering for improved device reliability.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 12, p. 982, doi. 10.1049/mnl.2017.0311
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- Article
Performance investigation of hetero material (InAs/Si)-based charge plasma TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 6, p. 358, doi. 10.1049/mnl.2016.0688
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- Article
Performance estimation of polarity controlled electrostatically doped tunnel field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 4, p. 239, doi. 10.1049/mnl.2016.0729
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- Article
Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity.
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- Chemosensors, 2023, v. 11, n. 5, p. 312, doi. 10.3390/chemosensors11050312
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- Article
Design and Analysis of Charge Plasma-Based Heterogeneous L-Shaped Tunnel Field-Effect Transistor (TFET) for Low-Power Applications.
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- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 5, p. 1, doi. 10.21272/jnep.16(5).05027
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- Article
Optimization of Subthreshold Swing in Vertical Tunnel FET Using Low Work Function Live Metal Strip and Low k Material in the Drain.
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- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 4, p. 1, doi. 10.21272/jnep.16(4).04029
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- Article
The Study of Hetero Dielectric Buried Oxide and Heterojunction Dual Material TFET.
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- Journal of Nano- & Electronic Physics, 2022, v. 14, n. 4, p. 1, doi. 10.21272/jnep.14(4).04009
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- Article
Sensitivity analysis of junctionless silicon NT-TFET and performance metrics comparison with the silicon NT-TFET.
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- Journal of Nanoparticle Research, 2024, v. 26, n. 6, p. 1, doi. 10.1007/s11051-024-06045-9
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- Article
Homo and hetero junctionless tunnel field effect transistors for mixed signal applications: a review.
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- Journal of Nanoparticle Research, 2021, v. 23, n. 10, p. 1, doi. 10.1007/s11051-021-05328-9
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- Article
A subthermionic tunnel field-effect transistor with an atomically thin channel.
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- Nature, 2015, v. 526, n. 7571, p. 91, doi. 10.1038/nature15387
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- Article
Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor With Enhanced Band to Band Tunneling Current.
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- Journal of Applied Research in Electrical Engineering, 2023, v. 2, n. 2, p. 206, doi. 10.22055/jaree.2024.44844.1082
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- Article
A Systematic Investigation of Dual Material Gate TFET for Improved Performance.
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- Indian Journal of Pure & Applied Physics, 2024, v. 62, n. 3, p. 229, doi. 10.56042/ijpap.v62i3.5888
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- Article
Electrical characterization of multi-gated WSe<sub>2</sub>/MoS<sub>2</sub> van der Waals heterojunctions.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-56455-x
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- Article
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5
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- Article
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5
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- Article
Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-38651-3
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- Article
Heterojunction tunnel field-effect transistor suitable for high-speed low-power applications.
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- Applied Nanoscience, 2023, v. 13, n. 3, p. 2481, doi. 10.1007/s13204-022-02358-0
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- Article