Works matching AU Stepanov, V. M.

Results: 29

NEW DATA ON CARBONATE SPRINGS IN ZABAYKAL'YE.
Published in:
International Geology Review, 1963, v. 5, n. 2, p. 189, doi. 10.1080/00206816309473767
By:
- Stepanov, V. M.
Publication type:
Article
Radioactive components of scales at the inner surface of pipes in oilfields of Kazakhstan.
Published in:
Journal of Radioanalytical & Nuclear Chemistry, 2005, v. 264, n. 2, p. 413, doi. 10.1007/s10967-005-0730-9
By:
- Kadyrzhanov, K. K.;
- Tuleushev, A. Zh.;
- Marabaev, Zh. N.;
- Kazachevskiy, I. V.;
- Lukashenko, S. N.;
- Pekhachek, V.;
- Solodukhin, V. P.;
- Pikalova, L. I.;
- Knyazev, B. B.;
- Stepanov, V. M.;
- Kabirova, G. M.;
- Feofanov, V. A.
Publication type:
Article
A new PCR-based approach to a fast search of a wide spectrum of cry genes from Bacillus thuringiensis strains.
Published in:
IUBMB Life, 1998, v. 45, n. 6, p. 1265, doi. 10.1080/15216549800203482
By:
- Shevelev, A. B.;
- Lewitin, E.;
- Novikova, S. I.;
- Wojciechowska, Ya.A.;
- Usacheva, E. A.;
- Chestukhina, G. G.;
- Stepanov, V. M.
Publication type:
Article
InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency.
Published in:
Technical Physics Letters, 1999, v. 25, n. 10, p. 766, doi. 10.1134/1.1262628
By:
- Danilova, T. N.;
- Danilova, A. P.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
InAsSb light-emitting diodes for the detection of CO[sub 2](λ=4.3 μm).
Published in:
Technical Physics Letters, 1998, v. 24, n. 8, p. 596, doi. 10.1134/1.1262210
By:
- Popov, A. A.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers.
Published in:
Technical Physics Letters, 1998, v. 24, n. 3, p. 239, doi. 10.1134/1.1262069
By:
- Danilova, T. N.;
- Evseenko, O. I.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
3.3-μm LEDs for measuring methane.
Published in:
Technical Physics Letters, 1997, v. 23, n. 11, p. 828, doi. 10.1134/1.1261898
By:
- Popov, A. A.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers.
Published in:
Technical Physics Letters, 1997, v. 23, n. 3, p. 233
By:
- Solov’ev, V. A.;
- Mikhaılova, M. P.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Power-Supply Systems Reliability Control.
Published in:
EAI Endorsed Transactions on the Energy Web, 2018, v. 5, n. 19, p. 1, doi. 10.4108/eai.10-7-2018.155083
By:
- Shpiganovich, A. N.;
- Zatsepina, V. I.;
- Shpiganovich, A. A.;
- Stepanov, V. M.
Publication type:
Article
Stress-strain relationship for periodic loading.
Published in:
Journal of Applied Mechanics & Technical Physics, 2006, v. 47, n. 3, p. 384, doi. 10.1007/s10808-006-0066-4
By:
- Kapustin, V. I.;
- Stepanov, V. M.
Publication type:
Article
Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1005, doi. 10.1134/S1063782607090011
By:
- Alekseev, A. N.;
- Byrnaz, A. É;
- Krasovitsky, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel’sky, Yu. V.;
- Sokolov, I. A.;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Shkurko, A. P.;
- Chalyi, V. P.
Publication type:
Article
Microwave Field-Effect Transistors Based on Group-III Nitrides.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1235, doi. 10.1134/1.1808836
By:
- Aleksandrov, S. B.;
- Baranov, D. A.;
- Kaidash, A. P.;
- Krasovitskii, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel'skii, Yu. V.;
- Sokolov, I. A.;
- Stepanov, M. V.;
- Chalyi, V. P.;
- Gladysheva, N. B.;
- Dorofeev, A. A.;
- Matveev, Yu. A.;
- Chernyavskii, A. A.
Publication type:
Article
Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 991, doi. 10.1134/1.1187821
By:
- Danilova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 924, doi. 10.1134/1.1187630
By:
- Danilova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 719, doi. 10.1134/1.1187768
By:
- Voronina, T. I.;
- Lagunova, T. S.;
- Moiseev, K. D.;
- Rozov, A. E.;
- Sipovskaya, M. A.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 μm) due to nonlinear optical effects.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 210, doi. 10.1134/1.1187672
By:
- Danilova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Scanning electron microscopy of long-wavelength laser structures.
Published in:
Semiconductors, 1998, v. 32, n. 11, p. 1157
By:
- Solov’ev, V. A.;
- Mikhaılova, M. P.;
- Moiseev, K. D.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 μm(T=77 K).
Published in:
Semiconductors, 1998, v. 32, n. 2, p. 218, doi. 10.1134/1.1187345
By:
- Danilova, T. N.;
- Danilova, A. P.;
- Ershov, O. G.;
- Imenkov, A. N.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1200, doi. 10.1134/1.1187294
By:
- Danilova, T. N.;
- Danilova, A. P.;
- Ershov, O. G.;
- Imenkov, A. N.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 μm.
Published in:
Semiconductors, 1997, v. 31, n. 8, p. 831, doi. 10.1134/1.1187264
By:
- Danilova, T. N.;
- Danilova, A. P.;
- Ershov, O. G.;
- Imenkov, A. H.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Influence of charge carriers on tuning in InAsSb lasers.
Published in:
Semiconductors, 1997, v. 31, n. 6, p. 563, doi. 10.1134/1.1187215
By:
- Danilova, T. N.;
- Evseenko, O. I.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov,, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Total impurity concentration in high-purity simple substances.
Published in:
Inorganic Materials, 2006, v. 42, n. 11, p. 1193, doi. 10.1134/S0020168506110045
By:
- Stepanov, V. M.;
- Bilevich, O. V.;
- Kolesnikov, A. N.
Publication type:
Article
Statistical Phenomenology of the Elemental Composition of Environmental Systems.
Published in:
Inorganic Materials, 2004, v. 40, n. 2, p. 207, doi. 10.1023/B:INMA.0000016100.42347.23
By:
- Stepanov, V. M.;
- Suprunova, I. A.
Publication type:
Article
GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer.
Published in:
Technical Physics Letters, 2008, v. 34, n. 9, p. 785, doi. 10.1134/S1063785008090216
By:
- Alekseev, A. N.;
- Byrnaz, A. É.;
- Krasovitskiĭ, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel'skiĭ, Yu. V.;
- Sokolov, I. A.;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Chalyĭ, V. P.;
- Shkurko, A. P.
Publication type:
Article
Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 8, p. 711, doi. 10.1134/S1063785008080269
By:
- Alekseev, A. N.;
- Aleksandrov, S. B.;
- Byrnaz, A. É.;
- Kokin, S. V.;
- Krasovitskiĭ, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel’skiĭ, M. Yu.;
- Pogorel’skiĭ, Yu. V.;
- Sokolov, I. A.;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Tkachenko, A. G.;
- Chalyĭ, V. P.;
- Shkurko, A. P.
Publication type:
Article
Multilayer AlN/AlGaN/GaN/AlGaN Heterostructures with Quantum Wells for High-Power Field-Effect Transistors Grown by Ammonia MBE.
Published in:
Technical Physics Letters, 2006, v. 32, n. 11, p. 960, doi. 10.1134/S1063785006110162
By:
- Alekseev, A. N.;
- Aleksandrov, S. B.;
- Byrnaz, A. É.;
- Velikovskiĭ, L. É.;
- Velikovskiĭ, I. É.;
- Veretekha, A. V.;
- Krasovitskiĭ, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel’skiĭ, M. Yu.;
- Pogorel’skiĭ, Yu. V.;
- I. A. Sokolov;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Tkachenko, A. G.;
- Shkurko, A. P.;
- Chalyĭ, V. P.
Publication type:
Article
Multilayer AlN/AlGaN/GaN/AlGaN Heterostructures for High-Power Field-Effect Transistors Grown by Ammonia MBE.
Published in:
Technical Physics Letters, 2005, v. 31, n. 10, p. 864, doi. 10.1134/1.2121841
By:
- Alekseev, A. N.;
- Aleksandrov, S. B.;
- Byrnaz, A. É.;
- Velikovskiĭ, L. É.;
- Velikovskiĭ, I. É.;
- Krasovitskiĭ, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel'skiĭ, Yu. V.;
- Sokolov, I. A.;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Tkachenko, A. G.;
- Shkurko, A. P.;
- Chalyĭ, V. P.
Publication type:
Article
MBE of InGaN/GaN Heterostructures Using Ammonia as a Source of Nitrogen.
Published in:
Technical Physics Letters, 2004, v. 30, n. 7, p. 580, doi. 10.1134/1.1783408
By:
- Petrov, S. I.;
- Ka&icaron;dash, A. P.;
- Krasovitski&icaron;, D. M.;
- Sokolov, I. A.;
- Pogorel'ski&icaron;, Yu. V.;
- Chaly&icaron;, V. P.;
- Shkurko, A. P.;
- Stepanov, M. V.;
- Pavienko, M. V.;
- Baranov, D. A.
Publication type:
Article
AlGaN/GaN HEMTs Grown by Ammonia MBE.
Published in:
Technical Physics Letters, 2004, v. 30, n. 5, p. 380, doi. 10.1134/1.1760861
By:
- Volkov, V. V.;
- Ivanova, V. P.;
- Kuz'michev, Yu. S.;
- Lermontov, S. A.;
- Solov'ev, Yu. V.;
- Baranov, D. A.;
- Ka&icaron;dash, A. P.;
- Krasovitski&icaron;, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel'ski&icaron;, Yu. V.;
- Sokolov, I. A.;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Chaly&icaron;, V. P.
Publication type:
Article