Works matching DE "METAL oxide semiconductor capacitors"
Results: 150
Photopatternable High‐k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties (Adv. Funct. Mater. 19/2023).
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- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202370121
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Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300691
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Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors (Adv. Electron. Mater. 4/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202370021
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Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201110
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Transparent, Multivalued Transistors Enabled By Area‐Selective Optical Doping on Ga‐Doped IZTO Thin Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200771
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Programmable Photovoltaics of Metal‐Oxide‐Semiconductor Junction.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200672
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In Situ Dielectric Al<sub>2</sub>O<sub>3</sub>/β‐Ga<sub>2</sub>O<sub>3</sub> Interfaces Grown Using Metal–Organic Chemical Vapor Deposition.
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- Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100333
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Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000858
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Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching.
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- Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000902
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Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al<sub>2</sub>O<sub>3</sub> Passivation Layer and Forming Gas Annealing.
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- Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700543
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Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems.
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- Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700277
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Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta 2 O 5 /Si interface.
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- Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2015, v. 170, n. 6, p. 510, doi. 10.1080/10420150.2015.1052433
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A super class-AB adaptive biasing amplifier in 65-nm CMOS technology.
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- International Journal of Electronics Letters, 2018, v. 6, n. 3, p. 302, doi. 10.1080/21681724.2017.1376710
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How Photoinduced Gate Screening and Leakage Currents Dynamically Change the Fermi Level in 2D Materials.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 10, p. 1, doi. 10.1002/pssr.202000298
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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer.
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- Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 9, p. n/a, doi. 10.1002/pssr.201700180
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Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 703, doi. 10.1002/pssr.201600227
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Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices.
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- Journal of Materials Science, 2020, v. 55, n. 19, p. 7999, doi. 10.1007/s10853-020-04531-8
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High-quality spin-on glass-based oxide as a matrix for embedding HfO nanoparticles for metal-oxide-semiconductor capacitors.
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- Journal of Materials Science, 2012, v. 47, n. 5, p. 2248, doi. 10.1007/s10853-011-6036-0
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Sol-Gel Synthesis of Carbon-Coated LaCoO<sub>3</sub> for Effective Electrocatalytic Oxidation of Salicylic Acid.
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- ChemElectroChem, 2017, v. 4, n. 4, p. 935, doi. 10.1002/celc.201600714
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Ultrafine Fe<sub>3</sub>O<sub>4</sub> Quantum Dots on Hybrid Carbon Nanosheets for Long-Life, High-Rate Alkali-Metal Storage.
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- ChemElectroChem, 2016, v. 3, n. 1, p. 38, doi. 10.1002/celc.201500410
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Wideband third‐order single‐transistor all‐pass filter.
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- International Journal of Circuit Theory & Applications, 2020, v. 48, n. 7, p. 1201, doi. 10.1002/cta.2786
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A new fast-response buck converter using accelerated pulse-width-modulation techniques.
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- International Journal of Circuit Theory & Applications, 2013, v. 41, n. 8, p. 854, doi. 10.1002/cta.823
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Low-cost high-quality crystalline germanium based flexible devices.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 9, p. 794, doi. 10.1002/pssr.201409257
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- Article
On-Fabrication Solid-State N-Doping of Graphene by an Electron-Transporting Metal Oxide Layer for Efficient Inverted Organic Solar Cells.
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- Advanced Energy Materials, 2016, v. 6, n. 12, p. n/a, doi. 10.1002/aenm.201600172
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- Article
Multifunctional Coatings from Scalable Single Source Precursor Chemistry in Tandem Photoelectrochemical Water Splitting.
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- Advanced Energy Materials, 2015, v. 5, n. 24, p. n/a, doi. 10.1002/aenm.201501668
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- Article
Enhancement of Stability in n -Channel OFETs by Modulating Polymeric Dielectric.
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- Polymers (20734360), 2023, v. 15, n. 11, p. 2421, doi. 10.3390/polym15112421
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A SYSTEMATIC STUDY ON THE DIELECTRIC RELAXATION, ELECTRIC MODULUS AND ELECTRICAL CONDUCTIVITY OF Al/Cu:TiO2∕n-Si (MOS) STRUCTURES/CAPACITORS.
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- Surface Review & Letters, 2020, v. 27, n. 10, p. N.PAG, doi. 10.1142/S0218625X19502172
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THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO<sub>2</sub> INTERFACIAL LAYER.
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- Surface Review & Letters, 2019, v. 26, n. 8, p. N.PAG, doi. 10.1142/S0218625X19500458
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Effects of Post-Deposition Annealing on ZrO/n-GaN MOS Capacitors with HO and O as the Oxidizers.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2024-x
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Effect of passivation layers in bilayer with ZrO<sub>2</sub> on Ge substrate for improved thermal stability.
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- Journal of Materials Science, 2024, v. 59, n. 41, p. 19584, doi. 10.1007/s10853-024-10309-z
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Towards in vivo biosensors for low-cost protein sensing.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 7, p. 1, doi. 10.1049/el.2012.4283
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- Article
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization (Adv. Mater. Interfaces 20/2021).
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- Advanced Materials Interfaces, 2021, v. 8, n. 20, p. 1, doi. 10.1002/admi.202170113
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- Article
Au-ZnO Nanocomposite Films for Plasmonic Photocatalysis.
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- Advanced Materials Interfaces, 2015, v. 2, n. 11, p. n/a, doi. 10.1002/admi.201500156
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Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion.
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- Instruments & Experimental Techniques, 2023, v. 66, n. 6, p. 1085, doi. 10.1134/S0020441223050330
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- Article
Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors.
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- Coatings (2079-6412), 2021, v. 11, n. 12, p. 1449, doi. 10.3390/coatings11121449
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Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition.
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- Coatings (2079-6412), 2019, v. 9, n. 11, p. 720, doi. 10.3390/coatings9110720
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- Article
Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric.
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- Coatings (2079-6412), 2018, v. 8, n. 12, p. 417, doi. 10.3390/coatings8120417
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- Article
The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation.
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- Micromachines, 2024, v. 15, n. 4, p. 496, doi. 10.3390/mi15040496
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Ultrathin Flexible Encapsulation Materials Based on Al 2 O 3 /Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors.
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- Micromachines, 2024, v. 15, n. 1, p. 41, doi. 10.3390/mi15010041
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Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al 2 O 3 /TiO 2 /Al 2 O 3 Stacked Dielectric Films for the Application to Energy Storage Devices.
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- Energies (19961073), 2021, v. 14, n. 15, p. 4538, doi. 10.3390/en14154538
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Morphological, Optical, and Electrical Properties of a MOS Capacitor Based on Rare Earth Oxide and p-Porous GaAs.
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6412, doi. 10.1007/s11664-024-11309-0
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Study of p-GaN Gate MOS-HEMT with Al<sub>2</sub>O<sub>3</sub> Insulator for High-Power Applications.
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- Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2865, doi. 10.1007/s11664-023-10252-w
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A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor.
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- Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2177, doi. 10.1007/s11664-022-10148-1
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Solution-Processed HfO<sub>2</sub>/Y<sub>2</sub>O<sub>3</sub> Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4944, doi. 10.1007/s11664-022-09738-w
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Electrical and Dielectric Properties of a Dy<sub>2</sub>O<sub>3</sub> MOS Capacitor.
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- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1250, doi. 10.1007/s11664-021-09391-9
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Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2956, doi. 10.1007/s11664-020-08716-4
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Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-(TiO2/WO3).
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- Journal of Electronic Materials, 2018, v. 47, n. 5, p. 2710, doi. 10.1007/s11664-018-6112-1
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An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors.
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- Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1371, doi. 10.1007/s11664-017-5951-5
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- Article
Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2296, doi. 10.1007/s11664-016-5262-2
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- Article
Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitors.
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- Journal of Electronic Materials, 2017, v. 46, n. 1, p. 386, doi. 10.1007/s11664-016-4841-6
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