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- Title
On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.
- Authors
Vasin, A. V.; Rusavsky, A. V.; Mamykin, S. V.; Nikolenko, A. S.; Strelchuk, V. V.; Yatskiv, R.; Grym, J.; Gudimenko, A. I.; Kladko, V. P.; Tyagulskyy, I. P.; Lorinčik, J.; Elantyev, I.; Nazarov, A. N.
- Abstract
A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films; however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane.
- Subjects
ZINC oxide films; METHANE; MASS spectrometry; HYDROGEN plasmas; MAGNETRON sputtering; THIN films
- Publication
Journal of Materials Science: Materials in Electronics, 2022, Vol 33, Issue 9, p6421
- ISSN
0957-4522
- Publication type
Academic Journal
- DOI
10.1007/s10854-022-07814-9