Works matching DE "STRAY currents"

Results: 1579

Ferroelectric Domains Engineering in 2D Van Der Waals Ferroelectric α‑In2Se3 Via Flexoelectric Effect.

Published in:

Small Methods, 2025, v. 9, n. 5, p. 1, doi. 10.1002/smtd.202401549

By:

He, Qinming;
Jiang, Bin;
Ma, Jiayu;
Chen, Weijin;
Luo, Xin;
Zheng, Yue

Publication type:

Article

Ultraviolet Pulse Measurements Associated with Leakage Current on the Surface of Contaminated Glass Insulators.

Published in:

International Journal on Electrical Engineering & Informatics, 2025, v. 17, n. 1, p. 18, doi. 10.15676/ijeei.2025.17.1.2

By:

Iezham Suhaimi, Saiful Mohammad;
Mohd Jamil, Mohamad Kamarol;
Bashir, Nouruddeen;
Muhamad, Nor Asiah

Publication type:

Article

Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 5, p. 1, doi. 10.1007/s00339-025-08512-z

By:

Fletcher, A. S. Augustine;
Murugapandiyan, P.;
Mohanbabu, A.;
Dhanasekar, S.;
Saranya, G.

Publication type:

Article

Enhanced magnetoelectric characteristics of PbZr0.52Ti0.48O3–CoFe2O4 composites: impact of molar ratio and phase connectivity.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 5, p. 1, doi. 10.1007/s00339-025-08509-8

By:

Ahmed, S.;
Atif, M.;
Zafar, F.;
Khalid, W.;
Ali, Z.;
Nadeem, M.

Publication type:

Article

Numerical Comparative Analysis of 10T-SRAM Cells with 6T, 7T, 8T, and 9T Using Vertical Nanowire Tunnel FETs.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 427, doi. 10.1134/S1063782625600299

By:

Das, Amit;
Bhardwaj, Anjana;
Gupta, Ashish;
Raj, Geetanjali

Publication type:

Article

Evaluation of Leakage Currents of Semiconductor Packages Due to High-Voltage Stress Under an Immersion Cooling Environment.

Published in:

Applied Sciences (2076-3417), 2025, v. 15, n. 9, p. 4668, doi. 10.3390/app15094668

By:

Min, Kyuhae;
Kang, Taejun;
Kang, Tae Yeob;
Pyo, Jae-Bum

Publication type:

Article

A Comprehensive Review of Cable Monitoring Techniques for Nuclear Power Plants.

Published in:

Energies (19961073), 2025, v. 18, n. 9, p. 2333, doi. 10.3390/en18092333

By:

Ghaforian, Allan;
Duggan, Patrick;
Lu, Lixuan

Publication type:

Article

A Novel Darlington Structure Power Switch Using a Vacuum Field Emission Transistor.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 9, p. 1737, doi. 10.3390/electronics14091737

By:

Ding, Yulong;
Ke, Yanlin;
She, Juncong;
Zhang, Yu;
Deng, Shaozhi

Publication type:

Article

Highly Robust Spray‐Pyrolyzed Al2O3 Gate Insulator for Flexible a‐IGZO Thin‐Film Transistors for Low‐Power Displays.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 9, p. 1, doi. 10.1002/pssa.202400894

By:

Ahn, Kiwan;
Islam, Md Mobaidul;
Chang, Yeoungjin;
Jang, Jin

Publication type:

Article

A Read Delay Compensated and Write Assist SRAM Cell with Power Gated and Power Delay Product Reduction Circuitry.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 8, p. 1, doi. 10.1142/S0218126625501853

By:

Rani, Mucherla Usha;
Reddy, N. Siva Sankara;
Naik, B. Rajendra

Publication type:

Article

Support Vector Machine for Prediction of the Electronic Factors of a Schottky Configuration Interlaid with Pure PVC and Doped by Sm2O3 Nanoparticles.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400624

By:

Azizian‐Kalandaragh, Yashar;
Barkhordari, Ali;
Badali, Yosef

Publication type:

Article

A Self‐Assembling Molecule for Improving the Mobility in PEDOT:PSS Hole Transport Layer for Efficient Perovskite Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400626

By:

Kim, Tae Hyung;
Kim, Bong Woo;
Im, Sang Hyuk

Publication type:

Article

Properties of Al doped CdZnTe film by aluminium induced crystallisation.

Published in:

Surface Engineering, 2016, v. 32, n. 3, p. 190, doi. 10.1179/1743294415Y.0000000067

By:

Zeng, D.;
Mu, Y.;
Meng, J.;
Liu, W.;
Chen, F.;
Zhou, H.

Publication type:

Article

Enhancing High‐Temperature Energy Density through Al2O3 Nanoplates with Charge Barrier Effect in Polyetherimide‐Based Composites.

Published in:

Macromolecular Chemistry & Physics, 2023, v. 224, n. 9, p. 1, doi. 10.1002/macp.202200457

By:

Yang, Xuelin;
Li, Hongye;
Xie, Xinyue;
Liu, Xiaolin

Publication type:

Article

Hybrid Nanodielectrics for Low-Voltage Organic Electronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 12, p. 1790, doi. 10.1002/adfm.201302428

By:

Luzio, Alessandro;
Ferré, Francisco García;
Fonzo, Fabio Di;
Caironi, Mario

Publication type:

Article

Dielectric, impedance and piezoelectric properties of (Na0.5La0.5)TiO3-doped 0.67BiFeO3–0.33BaTiO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 10, p. 1, doi. 10.1007/s10854-023-10198-z

By:

Zhao, Nianshun;
Shi, Yungui;
Huang, Feng;
Li, Zheng;
Li, Cheng;
Wang, Li;
Cao, Jianhua;
Fan, Huiqing

Publication type:

Article

Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 9, p. 1, doi. 10.1007/s10854-023-10149-8

By:

Manjunath, V.;
Chalapathi, U.;
Reddy, B. Purusottam;
Ahn, Chang-Hoi;
Park, Si-Hyun

Publication type:

Article

Influence of SrCO3‐doping on the microstructure and electrical properties of ZnO–(Bi2O3/Sb2O3) varistor ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 9, p. 1, doi. 10.1007/s10854-023-10092-8

By:

Kharchouche, Faiçal;
Zebar, Abdelkrim

Publication type:

Article

Realizing high energy storage performance in cost-cutting BiFeO3/SiO2 composite films.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09865-y

By:

Liu, Shuo;
Feng, Wuwei;
Bao, Zhidi;
He, Bin;
Ge, Shengyang;
Li, Jinhong;
Liu, Yuqin

Publication type:

Article

Structure and properties of 0.5Bi4Ti3O12-0.5BiFe0.98Mn0.02O3 films under different annealing atmospheres.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-022-09735-z

By:

Liu, Yan;
Wang, Yangyang;
Wang, Guodong;
Yao, Bingdong;
He, Jingxian;
Zhang, Fengqing;
Li, Jing

Publication type:

Article

Effect of DC ageing on the NiO-doped ZnO varistor ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 35, p. 26124, doi. 10.1007/s10854-022-09299-y

By:

Feng, Yong;
Li, Yupeng;
Zhao, Xuetong;
Zhao, Xia;
Guo, Men;
Yang, Lijun;
Liao, Ruijin

Publication type:

Article

Flash sintering behaviors of Y2O3-dopd high-voltage ZnO varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 34, p. 25861, doi. 10.1007/s10854-022-09276-5

By:

Jiang, Ming;
Shi, Meng-Yang;
Li, Jia-Mao;
Liu, Juan;
Zhang, Lei;
Cheng, Zhan;
Qin, Jian;
Jiu, Yong-Tao;
Tang, Bin;
Xu, Dong

Publication type:

Article

Investigation of structural, electrical, and dielectric properties of lead-free (BiFeO3)(1-x) – (CaTiO3)x ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 33, p. 24959, doi. 10.1007/s10854-022-09205-6

By:

Sreenu, Gomasu;
Saha, Subhadeep;
Bhowmik, R. N.;
Praveen, J. P.;
Das, Dibakar

Publication type:

Article

Improvement of properties of ZnO varistors by low-temperature two-step sintering method.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 31, p. 23918, doi. 10.1007/s10854-021-07510-0

By:

Liu, Wenjin;
Ai, Jianping;
Li, Wenkui;
Cheng, Lihong

Publication type:

Article

Effect of La2O3 doping on microstructure and electrical properties of flash-sintered ZnO-Bi2O3 varistor.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 30, p. 23437, doi. 10.1007/s10854-022-09105-9

By:

Shi, Mengyang;
Zhang, Lei;
Cheng, Zhan;
Wang, Zhentao;
He, Qun;
Qin, Jian;
Jiu, Yongtao;
Tang, Bin;
Xu, Dong

Publication type:

Article

Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 30, p. 23341, doi. 10.1007/s10854-022-09096-7

By:

Li, Yue;
Feng, Tianyang;
Sun, Tangyou;
Chen, Yonghe;
Zhang, Fabi;
Fu, Tao;
Wangyang, Peihua;
Li, Haiou;
Liu, Xingpeng

Publication type:

Article

Effects of Li/M (M = Al, Ga, In, and Er) co-doping on the electrical properties of BiFeO3–BaTiO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 29, p. 22736, doi. 10.1007/s10854-022-09040-9

By:

Xu, Dan;
Zhao, Hong;
Yu, Taolin;
Duan, Xiaoyang;
Zhao, Wenjie

Publication type:

Article

Effects of the electric field on microstructure and electrical properties of ZnO–Bi2O3–Co2O3 varistor by flash sintering.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 22, p. 17900, doi. 10.1007/s10854-022-08653-4

By:

Shi, Mengyang;
Liu, Juan;
Li, Jiamao;
Xu, Jingrong;
Jiang, Ming;
Xu, Dong

Publication type:

Article

Khaya gum – a natural and eco-friendly biopolymer dielectric for low-cost organic field-effect transistors (OFETs).

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15283, doi. 10.1007/s10854-022-08388-2

By:

Tall, Abdoulaye;
Faraji, Sheida;
Diallo, Abdou K.;
Mohammadian, Navid;
Erouel, Mohsen;
Seck, Mané;
Saadi, Meriem;
Khirouni, Kamel;
Majewski, Leszek A.

Publication type:

Article

Enhanced breakdown strength and energy density by introducing low-loading poly(1,5-anthraquinone) into poly(vinylidene fluoride).

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 17, p. 13850, doi. 10.1007/s10854-022-08317-3

By:

Zhang, Yang;
Yan, Fei;
Lao, Sijia;
Li, Xiaoyu;
Dong, Lijie

Publication type:

Article

Effect of the doping concentration of Er3+ on ferroelectric properties of Bi4−xErxTi3O12 films.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 16, p. 13124, doi. 10.1007/s10854-022-08251-4

By:

Shi, Min;
Men, Enyang;
Chen, Hao;
Xu, Yudong;
Zuo, Ruzhong;
Bai, Tiancheng;
Du, Shushu

Publication type:

Article

The influence of sintering temperature on the structure and electrical properties of ZBCMS varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 12104, doi. 10.1007/s10854-022-08170-4

By:

Liu, Jianke;
Li, Zhizhi;
Liu, Shihua;
Xu, Rongkai;
Chen, Jiaojiao;
Su, Jinfeng;
Li, Li;
Cao, Wenbin

Publication type:

Article

The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11227, doi. 10.1007/s10854-022-08097-w

By:

Patil, Sumit R.;
Barhate, Viral N.;
Patil, Vilas S.;
Agrawal, Khushabu S.;
Mahajan, Ashok M.

Publication type:

Article

Wide bandgap CIGS thin films via Ag-PDT to ameliorate the interface quality of CIGS/CdS heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11055, doi. 10.1007/s10854-022-08083-2

By:

Wang, Chaojie;
Hu, Zhaojing;
Liu, Yunfeng;
Cheng, Shiqing;
Yao, Yifeng;
Zhang, Yunxiang;
Yang, Xudong;
Zhou, Zhiqiang;
Liu, Fangfang;
Zhang, Yi;
Sun, Yun;
Liu, Wei

Publication type:

Article

Comparative study of tripropylamine and naphthylamine as additives in wave solder flux: investigation of solderability and corrosion effects.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10234, doi. 10.1007/s10854-022-08012-3

By:

Li, Feng;
Jellesen, Morten Stendahl;
Ambat, Rajan

Publication type:

Article

Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 12, p. 9580, doi. 10.1007/s10854-021-07581-z

By:

Pal, Nila;
Pandey, Utkarsh;
Biring, Sajal;
Pal, Bhola N.

Publication type:

Article

Reduced leakage current and excellent thermal stability in lead-free BiFeO3–BaTiO3-based piezoelectric ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 7, p. 3949, doi. 10.1007/s10854-021-07589-5

By:

Bai, Xudong;
Pan, Yongqi;
Xia, Zhichao;
He, Caiwang;
Li, Guannan;
Chen, Yi

Publication type:

Article

A simple and low-cost method of preparing CoFe2O4/Ba0.85Ca0.15Zr0.1Ti0.9O3 composite ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 7, p. 3757, doi. 10.1007/s10854-021-07567-x

By:

Li, Chunyue;
Zhang, Jin;
Yuan, Yue;
Zhang, Huiming;
Yan, Xi;
Zhao, Qian;
Lin, Yuanhua

Publication type:

Article

Investigations on BaMnxTi1-xO3 ferroelectric film based MFS structure for non-volatile memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 2, p. 985, doi. 10.1007/s10854-021-07369-1

By:

Debnath, Ajit;
Lalwani, Suraj;
Singh, Sanjai;
Sunny

Publication type:

Article

Microstructures and dielectric properties of novel (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2Ce2O7 high entropy ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27860, doi. 10.1007/s10854-021-07168-8

By:

Xie, Huihui;
Li, Jinsheng;
Yang, Shuzhen;
Wu, Lei;
Li, Pengfei;
Qi, Xiwei

Publication type:

Article

Enhanced magnetoelectric coupling in environmental friendly lead-free Ni0.8Zn0.2Fe2O4–Ba0.85Ca0.15Zr0.1Ti0.9O3 laminate composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25481, doi. 10.1007/s10854-021-07012-z

By:

Bansal, Pankhuri;
Syal, Rajat;
Singh, Arun Kumar;
Kumar, Sanjeev

Publication type:

Article

Influence of thickness of the sputtered diamond-like carbon (DLC) on electronic and dielectric parameters of the Au/DLC/n-Si heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25214, doi. 10.1007/s10854-021-06977-1

By:

Kurt, Mustafa Şükrü;
Yıldırım, Fatma;
Orhan, Zeynep;
Aydoğan, Ş.

Publication type:

Article

Enhanced piezoelectric and ferroelectric properties of tetragonal BiFeO3–BaTiO3 ceramics via tailoring sintering temperature and dwell time.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24496, doi. 10.1007/s10854-021-06928-w

By:

Cheng, Shuai;
Zhang, Bo-Ping;
Wang, Li-Jun;
Yang, Tao;
Yuan, Chang-Lai;
Zhou, Chang-Rong;
Rao, Guang-Hui;
Yin, Yang

Publication type:

Article

Impact of interfacial charges on analog and RF performance of Mg2Si source heterojunction double-gate tunnel field effect transistor.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 23863, doi. 10.1007/s10854-021-06823-4

By:

Dassi, Minaxi;
Madan, Jaya;
Pandey, Rahul;
Sharma, Rajnish

Publication type:

Article

Influence of Gd2O3 on phase, microstructure, and electrical properties of ZnO varistor ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 18, p. 23156, doi. 10.1007/s10854-021-06801-w

By:

Shi, Jufeng;
Xu, Yangyi;
Wei, Yunge;
Li, Guifang

Publication type:

Article

Investigation of BiFeO3/HfO2 gate stack for ferroelectric field effect transistors in IOT applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 17, p. 22517, doi. 10.1007/s10854-021-06737-1

By:

Tripathi, Pramod Narayan;
Ojha, Sanjeev Kumar;
Jha, Rajesh Kumar;
Nazarov, Alexey

Publication type:

Article

Anomalous diode behavior of Cu2S/SnO2 p–n junction.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 21804, doi. 10.1007/s10854-021-06703-x

By:

Lima, João V. M.;
Santos, Stevan B. O.;
Silva, Rafael A.;
Boratto, Miguel H.;
Graeff, Carlos F. O.;
Scalvi, Luis V. A.

Publication type:

Article

Effect of magnetic field on ferroelectric output voltage: a study on La0.7Sr0.3MnO3 (LSMO)/P(VDF-TrFE) flexible multiferroic nanocomposite films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 21780, doi. 10.1007/s10854-021-06699-4

By:

Koner, Sougata;
Deshmukh, Pratik;
Ahlawat, Anju;
Sagdeo, Archna;
Singh, Rashmi;
Karnal, A. K.;
Satapathy, S.

Publication type:

Article

Giant magnetocapacitance in magnetoelectric BNT/NFO particulate composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 21288, doi. 10.1007/s10854-021-06631-w

By:

Singh, Parminder;
Laishram, Radhapiyari;
Sharma, Puneet;
Kolte, Jayant

Publication type:

Article

Dielectric and electrical energy storage properties of BiFeO3–BaTiO3–SrTiO3 ternary bulk ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 21188, doi. 10.1007/s10854-021-06618-7

By:

Sun, Ying;
Liu, Hongbo;
Liu, Fangchao;
Liu, Gang

Publication type:

Article