Works matching DE "GALLIUM nitride"

Results: 3325

Deep Learning for Chromatic Optimization in Dual‐Color Mini‐LEDs for Aircraft Displays.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 10, p. 1, doi. 10.1002/lpor.202402087

By:

Gao, Fengyun;
Zhang, Nan;
Bai, Zelong;
Lu, Yijun;
Chen, Zhong;
Guo, Weijie

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Article

Boosting Single‐Photon Extraction Efficiency in GaN Through Radiative Mode Conversion.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 10, p. 1, doi. 10.1002/lpor.202401966

By:

Hong, Kee Suk;
Lim, Hee‐Jin;
Ko, Young‐Ho;
Kim, Kap‐Joong;
Lee, Junhee;
Song, Jung‐Hoon;
Kim, Seong‐Han;
Choi, Junho;
Lee, Sun‐Goo;
Lee, Wook‐Jae

Publication type:

Article

Simulation and modeling of gallium nitride high-electron mobility transistors for non-alloyed ohmic contacts.

Published in:

International Journal of Nanoelectronics & Materials, 2025, v. 18, n. 2, p. 222, doi. 10.58915/ijneam.v18i2.2066

By:

Tung Kok Siong;
Packeer Mohamed, Mohamed Fauzi;
Abd Rahman, Siti Fatimah;
Syamsul, Mohd;
Abu Bakar, Ahmad Shuhaimi;
Abd Rahim, Alhan Farhanah

Publication type:

Article

Моделювання впливу конфігурації джерела GaN на термоелектричні параметри апарата високого тиску в процесі перекристалізації його із системи Fe–Ga–N.

Published in:

Mechanics & Advanced Technologies, 2025, v. 9, n. 1, p. 59, doi. 10.20535/2521-1943.2025.9.1(104).322233

By:

Людвіченко, О. П.;
Лєщук, О. О.;
Анісін, О. М.

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Article

Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 9, p. 635, doi. 10.3390/nano15090635

By:

Zhang, Jiachen;
Lv, Kunlun;
Yin, Yuan;
Gao, Yuqian;
Tian, Ye;
Han, Yuncheng;
Tang, Jun

Publication type:

Article

Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4350, doi. 10.1007/s11664-025-11882-y

By:

Dishman, Haley E.;
Meilander, Owen R.;
Ebrish, Mona A.

Publication type:

Article

Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4343, doi. 10.1007/s11664-025-11854-2

By:

Blanton, Eric W.;
Nikodemski, Stefan;
Grupen, Matt;
Glavin, Nicholas R.;
Snure, Michael

Publication type:

Article

Temperature Dependence of Electrical Properties of Ammonothermal GaN.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 9, p. 1, doi. 10.1002/pssa.202400832

By:

Shen, Liangkun;
Li, Tengkun;
Ren, Guoqiang;
Xie, Kaihe;
Lu, Wenhao;
Zhou, Hu;
Xu, Ke

Publication type:

Article

Development of Gallium Nitride Coating via Aerosol Deposition.

Published in:

Journal of Thermal Spray Technology, 2025, v. 34, n. 4, p. 1507, doi. 10.1007/s11666-025-01951-3

By:

Zhou, Shaoyun;
Elsenberg, Andreas;
Huang, Chunjie;
Schulze, Camilla;
Gaertner, Frank;
Ogawa, Kazuhiro;
Klassen, Thomas

Publication type:

Article

Gold nanoparticles modified porous GaN electrode for electrochemical determination of catechol.

Published in:

Journal of Nanoparticle Research, 2025, v. 27, n. 4, p. 1, doi. 10.1007/s11051-025-06310-5

By:

Chen, Xin;
Li, Xiaoyun;
Zhang, Yan;
Zhang, Miaorong;
Tang, Jianguo

Publication type:

Article

8 W at 10 GHz in AlGaN/GaN High Electron Mobility Transistors on Silicon Without Any Carbon or Iron Doping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400409

By:

Shuvro, Shonkho;
Gowrisankar, Aniruddhan;
Jayaramaiah, Roopa;
Venugopalrao, Anirudh;
Chandrasekar, Hareesh;
Sen, Prosenjit;
Muralidharan, Rangarajan;
Raghavan, Srinivasan;
Nath, Digbijoy Neelim

Publication type:

Article

Unusually High‐Density 2D Electron Gases in N‐Polar AlGaN/GaN Heterostructures with GaN/AlN Superlattice Back Barriers Grown on Sapphire Substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400379

By:

Matys, Maciej;
Yamada, Atsushi;
Ohki, Toshihiro

Publication type:

Article

Hermetic Package 기반 우주항공용 45 W Ku-대역 GaN HPA MMIC.

Published in:

Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2025, v. 36, n. 3, p. 236, doi. 10.5515/KJKIEES.2025.36.3.236

By:

김 창 민;
이 영 완;
강 현 철

Publication type:

Article

Ultra‐Broadband Polarization‐Independent Terahertz Absorber Based on All‐Dielectric GaN Metamaterials.

Published in:

Physica Status Solidi (B), 2025, v. 262, n. 5, p. 1, doi. 10.1002/pssb.202400602

By:

Qin, Mingfei;
Ji, Shijun;
Zhao, Ji;
Li, Jingjin;
Dai, Handa

Publication type:

Article

Input–output waveform engineered inverse Class F power amplifiers with high efficiency.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 5, p. 3062, doi. 10.1002/cta.4254

By:

Zhu, Zheming;
Cheng, Zhiqun;
Jia, Minshi;
Wang, Kun;
Li, Bingxin;
Yang, Zhenghao;
Zhong, Baoquan

Publication type:

Article

Soft‐switching boundary and piecewise control of LLC converter with hybrid modulation.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 5, p. 2660, doi. 10.1002/cta.4242

By:

Liu, Baoquan;
Han, Meng;
Zhou, Qihao;
Liu, Yan

Publication type:

Article

Design of a Doherty power amplifier based on extended continuous class‐GF mode for broadband applications.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 5, p. 3074, doi. 10.1002/cta.4215

By:

Xuan, Xuefei;
Cheng, Zhiqun;
Hayes, Brendan;
Zhang, Zhiwei;
Zhao, Ziming;
Gong, Tingwei;
Le, Chao

Publication type:

Article

Annealing temperature effects on structural and magnetic properties of Ga1-xMnxN films.

Published in:

Surface Engineering, 2012, v. 28, n. 7, p. 540, doi. 10.1179/1743294412Y.0000000014

By:

Hu, B;
Man, B Y;
Liu, M;
Chen, C S;
Gao, X G;
Xu, S C;
Wang, C C

Publication type:

Article

Effect of cyclic indentation on epitaxial GaN films.

Published in:

Surface Engineering, 2012, v. 28, n. 3, p. 176, doi. 10.1179/1743294411Y.0000000057

By:

Tsai, C-H;
Yau, W-H

Publication type:

Article

Research Progress in Liquid Phase Growth of GaN Crystals.

Published in:

Chemistry - A European Journal, 2024, v. 30, n. 17, p. 1, doi. 10.1002/chem.202303710

By:

Sun, Defu;
Liu, Lei;
Wang, Guodong;
Yu, Jiaoxian;
Li, Qiubo;
Tian, Ge;
Wang, Benfa;
Xu, Xiangang;
Zhang, Lei;
Wang, Shouzhi

Publication type:

Article

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 9, p. n/a, doi. 10.1002/adfm.201604854

By:

Wang, Ping;
Wang, Xinqiang;
Wang, Tao;
Tan, Chih‐Shan;
Sheng, Bowen;
Sun, Xiaoxiao;
Li, Mo;
Rong, Xin;
Zheng, Xiantong;
Chen, Zhaoying;
Yang, Xuelin;
Xu, Fujun;
Qin, Zhixin;
Zhang, Jian;
Zhang, Xixiang;
Shen, Bo

Publication type:

Article

A Bamboo-Like GaN Microwire-Based Piezotronic Memristor.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 29, p. 5307, doi. 10.1002/adfm.201600962

By:

Liu, Haitao;
Hua, Qilin;
Yu, Ruomeng;
Yang, Yuchao;
Zhang, Taiping;
Zhang, Yingjiu;
Pan, Caofeng

Publication type:

Article

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 41, p. 6503, doi. 10.1002/adfm.201401438

By:

Xiong, Kanglin;
Park, Sung Hyun;
Song, Jie;
Yuan, Ge;
Chen, Danti;
Leung, Benjamin;
Han, Jung

Publication type:

Article

Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 28, p. 4491, doi. 10.1002/adfm.201470185

By:

Bayram, Can;
Ott, John A.;
Shiu, Kuen‐Ting;
Cheng, Cheng‐Wei;
Zhu, Yu;
Kim, Jeehwan;
Razeghi, Manijeh;
Sadana, Devendra K.

Publication type:

Article

Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 21, p. 3162, doi. 10.1002/adfm.201303671

By:

Lin, Yen‐Ting;
Yeh, Ting‐Wei;
Nakajima, Yoshitake;
Dapkus, P. Daniel

Publication type:

Article

Nanomembranes: Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes (Adv. Funct. Mater. 16/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 16, p. 2412, doi. 10.1002/adfm.201470104

By:

ElAfandy, Rami T.;
Majid, Mohammed A.;
Ng, Tien Khee;
Zhao, Lan;
Cha, Dongkyu;
Ooi, Boon S.

Publication type:

Article

A review of nanoindentation and related cathodoluminescence studies on semiconductor materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 27, p. 21223, doi. 10.1007/s10854-022-08995-z

By:

Sharma, Hemant Kumar;
Sharma, Rajesh Kumar;
Saxena, Raghvendra Sahai;
Prasad, Rajesh

Publication type:

Article

Impedance studies of free-standing, flexible thin films of PVDF filled with gallium nitride nanoparticles.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 23, p. 18658, doi. 10.1007/s10854-022-08715-7

By:

Thakur, Abhishek;
Jangra, Mandeep;
Dam, Siddhartha;
Hussain, Shamima

Publication type:

Article

(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 10, p. 7587, doi. 10.1007/s10854-022-07905-7

By:

Laifi, J.;
Bchetnia, A.

Publication type:

Article

Study on modulating the indium composition in InGaN quantum wells to improve the luminous efficiency of GaN LED.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 20965, doi. 10.1007/s10854-021-06516-y

By:

Hu, Shao-Hwa;
Lin, Yen-Sheng;
Tseng, Wei-Chieh;
Su, Shui-Hsiang;
Wu, Li-Chun;
Dai, Hang

Publication type:

Article

Two-dimensional Hf2CO2/GaN van der Waals heterostructure for overall water splitting: a density functional theory study.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 14, p. 19368, doi. 10.1007/s10854-021-06454-9

By:

Zhang, Minghui;
Si, Ruihao;
Wu, Xiaoyi;
Dong, Yao;
Fu, Kun;
Xu, Xuewen;
Zhang, Jun;
Li, Lanlan;
Guo, Yue

Publication type:

Article

FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 11, p. 14532, doi. 10.1007/s10854-021-06010-5

By:

Jelmakas, E.;
Kadys, A.;
Dmukauskas, M.;
Grinys, T.;
Tomašiūnas, R.;
Dobrovolskas, D.;
Gervinskas, G.;
Juodkazis, S.;
Talaikis, M.;
Niaura, G.

Publication type:

Article

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17892, doi. 10.1007/s10854-020-04342-2

By:

Piętak, Karolina;
Złotnik, Sebastian;
Rozbiegała, Ewelina;
Michałowski, Paweł P.;
Wójcik, Marek;
Gaca, Jarosław;
Rudziński, Mariusz

Publication type:

Article

Low leakage GaN HEMTs with sub-100 nm T-shape gates fabricated by a low-damage etching process.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5886, doi. 10.1007/s10854-019-02758-z

By:

Lei, Siqi;
Cheng, Wei-Chih;
Wu, Jingyi;
Wang, Liang;
Wang, Qing;
Xia, Guangrui;
Zhao, Feng;
Yu, Hongyu

Publication type:

Article

Strengthening of DBA substrate with Ni/Ti/Ag metallization for thermal fatigue-resistant Ag sinter joining in GaN power modules.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 4, p. 3715, doi. 10.1007/s10854-020-02930-w

By:

Kim, Dongjin;
Chen, Chuantong;
Lee, Seung-Joon;
Nagao, Shijo;
Suganuma, Katsuaki

Publication type:

Article

Optical parameters of gallium nitride doped ferrite–polypyrrole nanocomposites.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 4, p. 3238, doi. 10.1007/s10854-020-02872-3

By:

Indrakanti, Rajani;
Brahmaji Rao, V.;
Udaya Kiran, C.

Publication type:

Article

Growth of uniform MoS2 layers on free-standing GaN semiconductor for vertical heterojunction device application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2040, doi. 10.1007/s10854-019-02723-w

By:

Desai, Pradeep;
Ranade, Ajinkya K.;
Shinde, Mandar;
Todankar, Bhagyashri;
Mahyavanshi, Rakesh D.;
Tanemura, Masaki;
Kalita, Golap

Publication type:

Article

Incubation effect during laser micromachining of GaN films with femtosecond pulses.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16821, doi. 10.1007/s10854-019-01373-2

By:

Almeida, G. F. B.;
Nolasco, L. K.;
Barbosa, G. R.;
Schneider, A.;
Jaros, A.;
Manglano Clavero, I.;
Margenfeld, C.;
Waag, A.;
Voss, T.;
Mendonça, C. R.

Publication type:

Article

Temperature- and light-sensitive mechanism in metal/organic/n-GaN bio-hybrid temperature photodiode based on salmon DNA biomolecule.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11771, doi. 10.1007/s10854-019-01542-3

By:

Siva Pratap Reddy, M.;
Lee, Jung-Hee;
Puneetha, Peddathimula;
Shim, Jaesool;
Im, Ki-Sik

Publication type:

Article

X-ray analysis for micro-structure of AlN/GaN multiple quantum well systems.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 1, p. 499, doi. 10.1007/s10854-018-0315-3

By:

Liubchenko, Oleksii I.;
Kladko, Vasyl P.;
Sabov, Tomash M.;
Dubikovskyi, Oleksandr V.

Publication type:

Article

Quantum efficiency of heterostructured AlN/AlxGa1−xN photocathodes with graded bandgap emission layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12443, doi. 10.1007/s10854-018-9361-0

By:

Yang, Mingzhu;
Guo, Jing;
Fu, Xiaoqian;
Liu, Zhanhui

Publication type:

Article

Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12373, doi. 10.1007/s10854-018-9351-2

By:

Bilgili, A. Kursat;
Akpinar, Ömer;
Kurtulus, Gürkan;
Ozturk, M. Kemal;
Ozcelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 8958, doi. 10.1007/s10854-018-8917-3

By:

Jain, Shubhendra Kumar;
Aggarwal, Neha;
Krishna, Shibin;
Kumar, Rahul;
Husale, Sudhir;
Gupta, Vinay;
Gupta, Govind

Publication type:

Article

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3511, doi. 10.1007/s10854-017-8324-1

By:

Siddiqua, Poppy;
O’Leary, Stephen K.

Publication type:

Article

Application of an orange-yellow emitting cationic iridium(III) complex in GaN-based warm white light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 2, p. 1554, doi. 10.1007/s10854-017-8065-1

By:

Ye, Yanchun;
Sun, Riyong;
Chen, Mingxian;
Tang, Huaijun;
Dong, Xueyan;
Wang, Kaimin;
Wang, Zhengliang

Publication type:

Article

Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 15217, doi. 10.1007/s10854-017-7399-z

By:

Liang, Zongwen;
Zhang, Xiong;
Dai, Qian;
Luan, Huakai;
Zhao, Jianguo;
Wu, Zili;
Hu, Guohua;
Cui, Yiping

Publication type:

Article

Low temperature and low pressure bonding of plateless Cu-Cu substrates by Ag-based transient liquid phase sintering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9351, doi. 10.1007/s10854-017-6674-3

By:

Muhammad, Khairi Faiz;
Yamamoto, Takehiro;
Yoshida, Makoto

Publication type:

Article

The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1288, doi. 10.1007/s10854-016-5657-0

By:

Özen, Soner;
Korkmaz, Şadan;
Şenay, Volkan;
Pat, Suat

Publication type:

Article

IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 6, p. 6108, doi. 10.1007/s10854-016-4536-z

By:

Tompkins, R.;
Khan, M.;
Green, R.;
Jones, K.;
Leach, J.

Publication type:

Article