Works matching DE "GALLIUM nitride"

Results: 3332

Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2076, doi. 10.3390/electronics14102076

By:

Wang, Haiping;
Zhang, Feiyu;
Zhao, Xuzhi;
You, Haifan;
Ma, Zhan;
Ye, Jiandong;
Lu, Hai;
Zhang, Rong;
Zheng, Youdou;
Chen, Dunjun

Publication type:

Article

레이다용 X-대역 GaN Front-End MMIC.

Published in:

Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2025, v. 36, n. 4, p. 424, doi. 10.5515/KJKIEES.2025.36.4.424

By:

노윤섭;
임종원

Publication type:

Article

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 556, doi. 10.3390/mi16050556

By:

Zhai, Lili;
Li, Xiangdong;
Ji, Jian;
Yu, Lu;
Chen, Liang;
Chen, Yaoming;
Xia, Haonan;
Han, Zhanfei;
Wang, Junbo;
Jiang, Xi;
Yuan, Song;
Zhang, Tao;
Hao, Yue;
Zhang, Jincheng

Publication type:

Article

Multi-Field Characterisation of Material Removal Processes in Ultrasonic Magnetorheological Chemical Compound Polishing of GaN Wafers.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 502, doi. 10.3390/mi16050502

By:

Liang, Huazhuo;
Chen, Wenjie;
Fu, Youzhi;
Zhou, Wenjie;
Mo, Ling;
Wen, Qi;
Liu, Dawei;
He, Junfeng

Publication type:

Article

等离子体光源高效率 F 类 GaN 射频功率放大器设计.

Published in:

Systems Engineering & Electronics, 2025, v. 47, n. 4, p. 1029, doi. 10.12305/j.issn.1001-506X.2025.04.01

By:

王江华;
贾华;
宦维定;
单家芳;
刘甫坤

Publication type:

Article

Compact continuous class-F/class-F−1 power amplifiers utilizing one-port CRLH transmission lines for broadband harmonic matching.

Published in:

International Journal of Microwave & Wireless Technologies, 2025, v. 17, n. 1, p. 149, doi. 10.1017/S1759078725000194

By:

Tsuji, Eri;
Aonuma, Soshi;
Tanaka, Shinichi

Publication type:

Article

Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4350, doi. 10.1007/s11664-025-11882-y

By:

Dishman, Haley E.;
Meilander, Owen R.;
Ebrish, Mona A.

Publication type:

Article

Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4343, doi. 10.1007/s11664-025-11854-2

By:

Blanton, Eric W.;
Nikodemski, Stefan;
Grupen, Matt;
Glavin, Nicholas R.;
Snure, Michael

Publication type:

Article

Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2355, doi. 10.1007/s11664-024-11672-y

By:

Devi, K. Nirmala;
Hariprasad, S.;
Natarajan, Ramkumar;
Chinnaswamy, Sivamani;
Ravi, S.

Publication type:

Article

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 784, doi. 10.1007/s11664-024-11579-8

By:

Sun, Shuxiang;
Zhang, Yajun;
Si, Yihan;
Xiong, Juan;
Luo, Xiaorong

Publication type:

Article

Feasibility of Gallium Nitride for Astronomical Charge-Coupled Devices.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6456, doi. 10.1007/s11664-024-11335-y

By:

Aggarwal, Anmol;
Seabroke, George M.;
Puri, Nitin K.

Publication type:

Article

Understanding the Role of Near-Junction Diamond Heat Spreaders in Packaged 20-Gate GaN HEMT Chips via Thermal Simulation.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5519, doi. 10.1007/s11664-024-11281-9

By:

Ridzwan, M. N. A. M.;
Abdullah, M. F.;
Yussof, A. M. M.;
Aziz, N. A.;
Lee, H. W.

Publication type:

Article

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4287, doi. 10.1007/s11664-024-11177-8

By:

Deshpande, Gauri;
Bhattacharya, Sandip;
Ajayan, J.;
Mounika, B.;
Nirmal, D.

Publication type:

Article

Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3926, doi. 10.1007/s11664-024-11156-z

By:

Wang, Yuhao;
Huang, Sen;
Jiang, Qimeng;
Wang, Xinhua;
Guo, Fuqiang;
Feng, Chao;
Fan, Jie;
Yin, Haibo;
Gao, Xinguo;
Wei, Ke;
Zheng, Yingkui;
Liu, Xinyu

Publication type:

Article

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3887, doi. 10.1007/s11664-024-11100-1

By:

Venkatesan, R. S.;
Manickam, Rajeswari;
Duraipandi, Brindha;
Sugathan, Krishnapriya Kottakkal

Publication type:

Article

High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3415, doi. 10.1007/s11664-024-11074-0

By:

Das, Partha

Publication type:

Article

Field Emission Properties of Top–Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2773, doi. 10.1007/s11664-023-10894-w

By:

Doundoulakis, G.;
Pavlidis, D.

Publication type:

Article

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2973, doi. 10.1007/s11664-024-11005-z

By:

Murugapandiyan, P.;
Sri Rama Krishna, Kalva;
Revathy, A.;
Fletcher, Augustine

Publication type:

Article

Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2562, doi. 10.1007/s11664-024-10987-0

By:

Li, Huan;
Bai, Zhiyuan;
Yang, Lian

Publication type:

Article

Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2533, doi. 10.1007/s11664-024-10968-3

By:

Chen, Zhichao;
Cai, Lie;
Niu, Kai;
Xu, Chaozhi;
Lin, Haoxiang;
Ren, Pengpeng;
Sun, Dong;
Lin, Haifeng

Publication type:

Article

Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2477, doi. 10.1007/s11664-024-10940-1

By:

Soma, Umamaheshwar

Publication type:

Article

Annealing temperature effects on structural and magnetic properties of Ga1-xMnxN films.

Published in:

Surface Engineering, 2012, v. 28, n. 7, p. 540, doi. 10.1179/1743294412Y.0000000014

By:

Hu, B;
Man, B Y;
Liu, M;
Chen, C S;
Gao, X G;
Xu, S C;
Wang, C C

Publication type:

Article

Effect of cyclic indentation on epitaxial GaN films.

Published in:

Surface Engineering, 2012, v. 28, n. 3, p. 176, doi. 10.1179/1743294411Y.0000000057

By:

Tsai, C-H;
Yau, W-H

Publication type:

Article

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article

Chemistry Platform for the Ultrafast Continuous Synthesis of High‐Quality III–V Quantum Dots.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 51, p. 12965, doi. 10.1002/chem.202101802

By:

Giroire, Baptiste;
Garcia, Alain;
Marre, Samuel;
Cardinal, Thierry;
Aymonier, Cyril

Publication type:

Article

Approaching Dissolved Species in Ammonoacidic GaN Crystal Growth: A Combined Solution NMR and Computational Study.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 31, p. 7008, doi. 10.1002/chem.201904657

By:

Becker, Peter;
Wonglakhon, Tanakorn;
Zahn, Dirk;
Gudat, Dietrich;
Niewa, Rainer

Publication type:

Article

Thermal Non-Oxidative Aromatization of Light Alkanes Catalyzed by Gallium Nitride.

Published in:

Angewandte Chemie, 2014, v. 126, n. 51, p. 14330, doi. 10.1002/ange.201408754

By:

Li, Lu;
Mu, Xiaoyue;
Liu, Wenbo;
Kong, Xianghua;
Fan, Shizhao;
Mi, Zetian;
Li, Chao ‐ Jun

Publication type:

Article

Incubation effect during laser micromachining of GaN films with femtosecond pulses.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16821, doi. 10.1007/s10854-019-01373-2

By:

Almeida, G. F. B.;
Nolasco, L. K.;
Barbosa, G. R.;
Schneider, A.;
Jaros, A.;
Manglano Clavero, I.;
Margenfeld, C.;
Waag, A.;
Voss, T.;
Mendonça, C. R.

Publication type:

Article

Temperature- and light-sensitive mechanism in metal/organic/n-GaN bio-hybrid temperature photodiode based on salmon DNA biomolecule.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11771, doi. 10.1007/s10854-019-01542-3

By:

Siva Pratap Reddy, M.;
Lee, Jung-Hee;
Puneetha, Peddathimula;
Shim, Jaesool;
Im, Ki-Sik

Publication type:

Article

X-ray analysis for micro-structure of AlN/GaN multiple quantum well systems.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 1, p. 499, doi. 10.1007/s10854-018-0315-3

By:

Liubchenko, Oleksii I.;
Kladko, Vasyl P.;
Sabov, Tomash M.;
Dubikovskyi, Oleksandr V.

Publication type:

Article

Quantum efficiency of heterostructured AlN/AlxGa1−xN photocathodes with graded bandgap emission layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12443, doi. 10.1007/s10854-018-9361-0

By:

Yang, Mingzhu;
Guo, Jing;
Fu, Xiaoqian;
Liu, Zhanhui

Publication type:

Article

Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12373, doi. 10.1007/s10854-018-9351-2

By:

Bilgili, A. Kursat;
Akpinar, Ömer;
Kurtulus, Gürkan;
Ozturk, M. Kemal;
Ozcelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 8958, doi. 10.1007/s10854-018-8917-3

By:

Jain, Shubhendra Kumar;
Aggarwal, Neha;
Krishna, Shibin;
Kumar, Rahul;
Husale, Sudhir;
Gupta, Vinay;
Gupta, Govind

Publication type:

Article

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3511, doi. 10.1007/s10854-017-8324-1

By:

Siddiqua, Poppy;
O’Leary, Stephen K.

Publication type:

Article

Application of an orange-yellow emitting cationic iridium(III) complex in GaN-based warm white light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 2, p. 1554, doi. 10.1007/s10854-017-8065-1

By:

Ye, Yanchun;
Sun, Riyong;
Chen, Mingxian;
Tang, Huaijun;
Dong, Xueyan;
Wang, Kaimin;
Wang, Zhengliang

Publication type:

Article

Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 15217, doi. 10.1007/s10854-017-7399-z

By:

Liang, Zongwen;
Zhang, Xiong;
Dai, Qian;
Luan, Huakai;
Zhao, Jianguo;
Wu, Zili;
Hu, Guohua;
Cui, Yiping

Publication type:

Article

Low temperature and low pressure bonding of plateless Cu-Cu substrates by Ag-based transient liquid phase sintering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9351, doi. 10.1007/s10854-017-6674-3

By:

Muhammad, Khairi Faiz;
Yamamoto, Takehiro;
Yoshida, Makoto

Publication type:

Article

The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1288, doi. 10.1007/s10854-016-5657-0

By:

Özen, Soner;
Korkmaz, Şadan;
Şenay, Volkan;
Pat, Suat

Publication type:

Article

IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 6, p. 6108, doi. 10.1007/s10854-016-4536-z

By:

Tompkins, R.;
Khan, M.;
Green, R.;
Jones, K.;
Leach, J.

Publication type:

Article

The controllable growth of GaN nanostructures with various morphologies.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1590, doi. 10.1007/s10854-015-3928-9

By:

Liu, Yihe;
Meng, Xianquan

Publication type:

Article

Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 2004, doi. 10.1007/s10854-015-3984-1

By:

Dai, Yiquan;
Li, Shuiming;
Gao, Hongwei;
Wang, Weihui;
Sun, Qian;
Peng, Qing;
Gui, Chengqun;
Qian, Zhengfang;
Liu, Sheng

Publication type:

Article

Nonpolar m-plane GaN-based light-emitting diodes on LiAlO (100) substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 2049, doi. 10.1007/s10854-015-3990-3

By:

Sun, Luanhong;
Zou, Jun;
Xu, Jiayue;
Yang, Bobo;
Li, Long

Publication type:

Article

Electronic structure, optical absorption and energy loss spectra of GaN graphitic sheet.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9898, doi. 10.1007/s10854-015-3666-z

By:

Behzad, Somayeh

Publication type:

Article

Synthesis and characterization of terbium doped gallium nitride nanocrystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 8065, doi. 10.1007/s10854-015-3464-7

By:

Kumar, Dinesh;
Kaur, Balwinder;
Singh, Karamjit;
Verma, Veena;
Bhatti, H.

Publication type:

Article

Synthesis of long Ag nanowires and its application in GaN nanowires photodetector as transparent electrodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6787, doi. 10.1007/s10854-015-3290-y

By:

Sun, Pan;
Liu, Yihe;
Wan, Xiang;
Meng, Xianquan;
Su, Rui;
Yu, Sheng

Publication type:

Article

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4475, doi. 10.1007/s10854-015-3055-7

By:

Siddiqua, Poppy;
Hadi, Walid;
Shur, Michael;
O'Leary, Stephen

Publication type:

Article

Direct real-time observation on nanoscale mechanical behavior of freestanding GaN short nano-bridge.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 1, p. 307, doi. 10.1007/s10854-014-2400-6

By:

Hung, Shang-Chao

Publication type:

Article

Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 11, p. 4675, doi. 10.1007/s10854-014-2226-2

By:

Hadi, Walid;
O'Leary, Stephen;
Shur, Michael

Publication type:

Article

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4200, doi. 10.1007/s10854-014-2149-y

By:

Zhuo, Xiang-Jing;
Zhang, Jun;
Li, Dan-Wei;
Ren, Zhi-Wei;
Yi, Han-Xiang;
Wang, Xing-Fu;
Tong, Jin-Hui;
Chen, Xin;
Zhao, Bi-Jun;
Wang, Wei-Li;
Li, Shu-Ti

Publication type:

Article

Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3264, doi. 10.1007/s10854-014-2012-1

By:

Tuan, Thi;
Kuo, Dong-Hau;
Li, Cheng-Che;
Yen, Wei-Chun

Publication type:

Article