Works matching DE "MOLECULAR beam epitaxy"

Results: 2187

Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides.

Published in:

National Science Review, 2025, v. 12, n. 4, p. 1, doi. 10.1093/nsr/nwae429

By:

Zhou, Guangdi;
Huang, Haoliang;
Wang, Fengzhe;
Wang, Heng;
Yang, Qishuo;
Nie, Zihao;
Lv, Wei;
Ding, Cui;
Li, Yueying;
Lin, Jiayi;
Yue, Changming;
Li, Danfeng;
Sun, Yujie;
Lin, Junhao;
Zhang, Guang-Ming;
Xue, Qi-Kun;
Chen, Zhuoyu

Publication type:

Article

Study on the Influence of Sn Concentration on Non-Substitutional Defect Concentration and Sn Surface Segregation in GeSn Alloys.

Published in:

Molecules, 2025, v. 30, n. 9, p. 1875, doi. 10.3390/molecules30091875

By:

Zhou, Zihang;
Li, Jiayi;
Jia, Mengjiang;
Wang, Hai;
Huang, Wenqi;
Zheng, Jun

Publication type:

Article

Unveiling high-Tc superconductivity: probing CuO2 planes in infinite-layer cuprates.

Published in:

AAPPS Bulletin, 2025, v. 35, n. 1, p. 1, doi. 10.1007/s43673-025-00152-y

By:

Wang, Rui-Feng;
Song, Can-Li;
Ma, Xu-Cun;
Xue, Qi-Kun

Publication type:

Article

Bandgap of Epitaxial Single-Crystal BiFe 1−x Mn x O 3 Films Grown Directly on SrTiO 3 /Si(001).

Published in:

Materials (1996-1944), 2025, v. 18, n. 9, p. 2022, doi. 10.3390/ma18092022

By:

Cantrell, Samuel R.;
Miracle, John T.;
Cottier, Ryan J.;
Lindsey, Skyler;
Theodoropoulou, Nikoleta

Publication type:

Article

Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4291, doi. 10.1007/s11664-024-11673-x

By:

Hardy, Matthew T.;
Lang, Andrew C.;
Hart, James L.;
Jin, Eric N.;
Nepal, Neeraj;
Gokhale, Vikrant J.;
Downey, Brian P.;
Katzer, D. Scott;
Litwin, Peter M.;
Sales, Maria Gabriela;
Growden, Tyler A.;
Wheeler, Virginia D.

Publication type:

Article

Annealing temperature effects on structural and magnetic properties of Ga1-xMnxN films.

Published in:

Surface Engineering, 2012, v. 28, n. 7, p. 540, doi. 10.1179/1743294412Y.0000000014

By:

Hu, B;
Man, B Y;
Liu, M;
Chen, C S;
Gao, X G;
Xu, S C;
Wang, C C

Publication type:

Article

Fabrication of Novel Nanoarchitecture For epi-IZO Thin Films on.

Published in:

Surface Engineering, 2004, v. 20, n. 3, p. 205, doi. 10.1179/026708404225015040

By:

Ramamoorthy, K.;
Jayachandran, M.;
Sankaranarayanan, K.;
Ganesan, V.;
Misra, P.;
Kukreja, L. M.;
Sanjeeviraja, C.

Publication type:

Article

Unleashing Strain Induced Ferroelectricity in Complex Oxide Thin Films via Precise Stoichiometry Control.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 40, p. 7271, doi. 10.1002/adfm.201602767

By:

Haislmaier, Ryan C.;
Grimley, Everett D.;
Biegalski, Michael D.;
LeBeau, James M.;
Trolier‐McKinstry, Susan;
Gopalan, Venkatraman;
Engel‐Herbert, Roman

Publication type:

Article

A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 17, p. 2836, doi. 10.1002/adfm.201504853

By:

Orrù, Marta;
Repiso, Eva;
Carapezzi, Stefania;
Henning, Alex;
Roddaro, Stefano;
Franciosi, Alfonso;
Rosenwaks, Yossi;
Cavallini, Anna;
Martelli, Faustino;
Rubini, Silvia

Publication type:

Article

Organic Electronics: Stable Alignment of Tautomers at Room Temperature in Porphyrin 2D Layers (Adv. Funct. Mater. 7/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 7, p. 957, doi. 10.1002/adfm.201470043

By:

Bussetti, Gianlorenzo;
Campione, Marcello;
Riva, Michele;
Picone, Andrea;
Raimondo, Luisa;
Ferraro, Lorenzo;
Hogan, Conor;
Palummo, Maurizia;
Brambilla, Alberto;
Finazzi, Marco;
Duò, Lamberto;
Sassella, Adele;
Ciccacci, Franco

Publication type:

Article

The Impacts of Cation Stoichiometry and Substrate Surface Quality on Nucleation, Structure, Defect Formation, and Intermixing in Complex Oxide Heteroepitaxy-LaCrO3 on SrTiO3(001).

Published in:

Advanced Functional Materials, 2013, v. 23, n. 23, p. 2953, doi. 10.1002/adfm.201202655

By:

Qiao, L.;
Zhang, K. H. L.;
Bowden, M. E.;
Varga, T.;
Shutthanandan, V.;
Colby, R.;
Du, Y.;
Kabius, B.;
Sushko, P. V.;
Biegalski, M. D.;
Chambers, S. A.

Publication type:

Article

Tunneling dynamics and transport in MBE-grown GaAs/AlGaAs asymmetric double quantum wells investigated via photoluminescence and terahertz time-domain spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 16126, doi. 10.1007/s10854-022-08503-3

By:

De Los Reyes, Alexander;
Prieto, Elizabeth Ann;
Dasallas, Lean;
Bardolaza, Hannah;
Tumanguil-Quitoras, Mae Agatha;
Cabello, Neil Irvin;
Somintac, Armando;
Salvador, Arnel;
Estacio, Elmer

Publication type:

Article

The structural, morphological, optical and gas-sensing properties of Mn3O4 thin films grown by successive ionic layer adsorption and reaction technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 14519, doi. 10.1007/s10854-022-08372-w

By:

Tekin, Sezen;
Karaduman Er, Irmak

Publication type:

Article

Electrical performance enhancement by resonant states in PbSe single-crystal growth via Bi-flux method.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24198, doi. 10.1007/s10854-021-06886-3

By:

He, Baihua;
Sun, Luqi;
Shen, Kaiyuan;
Tang, Yu;
Zheng, Jie;
Shen, Lanxian;
Deng, Shukang

Publication type:

Article

Optical characterization of Nitrided InAs/GaAs quantum dots grown by MBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 17, p. 22645, doi. 10.1007/s10854-021-06749-x

By:

Naceur, Syrine;
Smiri, Badreddine;
Maaref, Hassen;
Mghaieth, Ridha

Publication type:

Article

Fabrication of MIS photodetector with Ge nanocrystals grown by MBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 16800, doi. 10.1007/s10854-021-06237-2

By:

Aouassa, M.;
M'gaieth, R.;
Azeza, B.;
Berbezier, I.;
Favre, L.

Publication type:

Article

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13825, doi. 10.1007/s10854-021-05958-8

By:

Gonzales, Karl Cedric;
Prieto, Elizabeth Ann;
Catindig, Gerald Angelo;
De Los Reyes, Alexander;
Faustino, Maria Angela;
Tumanguil-Quitoras, Mae Agatha;
Husay, Horace Andrew;
Vasquez, John Daniel;
Somintac, Armando;
Estacio, Elmer;
Salvador, Arnel

Publication type:

Article

Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6425, doi. 10.1007/s10854-021-05360-4

By:

Du, Yong;
Xu, Buqing;
Wang, Guilei;
Gu, Shihai;
Li, Ben;
Kong, Zhenzhen;
Yu, Jiahan;
Bai, Guobin;
Li, Junjie;
Wang, Wenwu;
Radamson, Henry H.

Publication type:

Article

Array of NiMn2O4 nanosheets for glucose sensing application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 22, p. 19691, doi. 10.1007/s10854-020-04495-0

By:

Naik, Kusha Kumar;
Bhuyan, Ranjan Kumar;
Mohapatra, Asish Kumar

Publication type:

Article

Comparison of optoelectronic properties of epitaxial and non-epitaxial GaN nanostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 16, p. 13756, doi. 10.1007/s10854-020-03935-1

By:

Upadhyaya, Kishor;
Ayachit, Narasimha;
Shivaprasad, S. M.

Publication type:

Article

Temperature dependence of photoluminescence from AlN/GaN-thin nanowires.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5033, doi. 10.1007/s10854-020-03102-6

By:

Abdel All, Naglaa;
Almokhtar, Mohamed;
El Ghoul, Jaber

Publication type:

Article

MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 6, p. 4605, doi. 10.1007/s10854-020-03012-7

By:

Aouassa, Mansour;
Franzò, Giorgia;
Assaf, Elie;
Sfaxi, Larbi;
M'Ghaieth, Ridha;
Maaref, Hassen

Publication type:

Article

Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2643, doi. 10.1007/s10854-019-02803-x

By:

Polupan, Georgiy;
Torchynska, Tetyana;
Vega Macotela, Leonardo G.;
Cisneros Tamayo, Ricardo;
Escobosa Echavarría, Arturo

Publication type:

Article

GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2073, doi. 10.1007/s10854-019-02728-5

By:

Milanova, Malina;
Donchev, Vesselin;
Arnaudov, Boris;
Alonso-Álvarez, Diego;
Terziyska, Penka

Publication type:

Article

Improvement of GaInSb crystal quality by rotating magnetic field.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15654, doi. 10.1007/s10854-019-01947-0

By:

Wang, Ruqing;
Wang, Jinwei;
He, Guofang;
Yang, Donghai;
Zhang, Weicai;
Liu, Juncheng

Publication type:

Article

Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3927, doi. 10.1007/s10854-017-8332-1

By:

Ghosh, Kankat;
Sarkar, Ritam;
Bhunia, Swagata;
Laha, Apurba

Publication type:

Article

Structural, optical and electrical characterization of dilute nitride GaPAsN structures grown on Si and GaP substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 3, p. 1939, doi. 10.1007/s10854-017-8104-y

By:

Sertel, T.;
Ozen, Y.;
Cetin, S. S.;
Ozturk, M. K.;
Ozcelik, S.

Publication type:

Article

P-type single-crystalline ZnO films obtained by (Li, N) dual implantation through dynamic annealing process.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16215, doi. 10.1007/s10854-017-7523-0

By:

Zhang, Zhiyuan;
Huang, Jingyun;
Chen, Shanshan;
Pan, Xinhua;
Chen, Lingxiang;
Ye, Zhizhen

Publication type:

Article

Room-temperature metal-insulator transition of MBE grown VO film investigated by temperature dependent resistance and transmittance.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11046, doi. 10.1007/s10854-017-6888-4

By:

Wang, Minhuan;
Fan, Lele;
Bian, Jiming;
Zhang, Dong;
Liu, Hongzhu;
Sun, Hongjun;
Luo, Yingmin

Publication type:

Article

Comparison of GaAs photocathode grown by MOCVD and MBE: a first-principle and experimental research.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7429, doi. 10.1007/s10854-017-6432-6

By:

Xu, Yuan;
Chang, Benkang;
Chen, Liang;
Chen, Xinlong;
Qian, Yunsheng

Publication type:

Article

Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 9, p. 9341, doi. 10.1007/s10854-016-4974-7

By:

Zhang, Xu;
Liu, Zhi;
He, Chao;
Cheng, Buwen;
Xue, Chunlai;
Li, Chuanbo;
Wang, Qiming

Publication type:

Article

Morphology evolution of nano-structured InN grown by MOMBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4285, doi. 10.1007/s10854-015-2980-9

By:

Kuo, Shou-Yi;
Chen, Wei-Chun;
Yang, Jui-Fu;
Hsiao, Chien-Nan;
Lai, Fang-I

Publication type:

Article

Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2480, doi. 10.1007/s10854-015-2709-9

By:

Fan, Jenn-Chyuan;
Lo, Yun-Yo;
Huang, Man-Fang;
Chen, Wei-Chi;
Liu, Chien-Chen;
Lee, C.;
Chiang, Yu-Chia

Publication type:

Article

Effects of annealing on the structural properties of indium rich InGaN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1197, doi. 10.1007/s10854-014-1709-5

By:

Ma, Quan-Bao;
Lieten, Ruben;
Borghs, Gustaaf

Publication type:

Article

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 9, p. 3371, doi. 10.1007/s10854-013-1257-4

By:

Bhat, Thirumaleshwara;
Rajpalke, Mohana;
Roul, Basanta;
Kumar, Mahesh;
Krupanidhi, S.

Publication type:

Article

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1635, doi. 10.1007/s10854-012-0987-z

By:

Fan, Dongsheng;
Zeng, Zhaoquan;
Dorogan, Vitaliy;
Hirono, Yusuke;
Li, Chen;
Mazur, Yuriy;
Yu, Shui-Qing;
Johnson, Shane;
Wang, Zhiming;
Salamo, Gregory

Publication type:

Article

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1799, doi. 10.1007/s10854-012-0665-1

By:

Riordan, Nathaniel;
Gogineni, Chaturvedi;
Johnson, Shane;
Lu, Xianfeng;
Tiedje, Tom;
Ding, Ding;
Zhang, Yong-Hang;
Fritz, Rafael;
Kolata, Kolja;
Chatterjee, Sangam;
Volz, Kerstin;
Koch, Stephan

Publication type:

Article

Effect of thickness on the structural and optical properties of GaN films grown on Si(111).

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 4, p. 972, doi. 10.1007/s10854-011-0529-0

By:

El-Naggar, Ahmed

Publication type:

Article

Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 10, p. 1024, doi. 10.1007/s10854-010-0104-0

By:

Kang Min Kim;
Krishnamurthy, Daivasigamani;
Yuji Sakai;
Jong-Uk Seo;
Hasegawa, Shigehiko;
Asahi, Hajime

Publication type:

Article

LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 425, doi. 10.1007/s10854-008-9661-x

By:

Ibáñez, J.;
Alarcón-Lladó, E.;
Cuscó, R.;
Artús, L.;
Fowler, D.;
Patanè, A.;
Uesugi, K.;
Suemune, I.

Publication type:

Article

Study of in-depth strain variation in ion-irradiated GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 68, doi. 10.1007/s10854-007-9540-x

By:

Herms, Martin;
Zeimer, Ute;
Sonia, Gnanapragasam;
Brunner, Frank;
Richter, Eberhard;
Weyers, Markus;
Tränkle, Günther;
Behm, Thomas;
Irmer, Gert;
Pensl, Gerhard;
Denker, Andrea;
Opitz-Coutureau, Jörg

Publication type:

Article

Defects in nanostructures with ripened InAs/GaAs quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 96, doi. 10.1007/s10854-008-9657-6

By:

Nasi, L.;
Bocchi, C.;
Germini, F.;
Prezioso, M.;
Gombia, E.;
Mosca, R.;
Frigeri, P.;
Trevisi, G.;
Seravalli, L.;
Franchi, S.

Publication type:

Article

Statistical methods of determining the QD dimensions based on atomic force microscopy measurements.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 347, doi. 10.1007/s10854-008-9656-7

By:

Piotrowski, T.;
Kaczmarczyk, M.

Publication type:

Article

Molecular beam epitaxy of semipolar AlN( $$11\bar{2}2$$ ) and GaN( $$11\bar{2}2$$ ) on m-sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 805, doi. 10.1007/s10854-007-9453-8

By:

Lahourcade, Lise;
Bellet-Amalric, Edith;
Monroy, Eva;
Chauvat, Marie Pierre;
Ruterana, Pierre

Publication type:

Article

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 311, doi. 10.1007/s10854-007-9335-0

By:

Kakemoto, Hirofumi;
Higuchi, Tohru;
Shibata, Hajime;
Wada, Satoshi;
Tsurumi, Takaaki

Publication type:

Article

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 131, doi. 10.1007/s10854-007-9305-6

By:

Usui, Hiroyuki;
Yasuda, Hidehiro;
Mori, Hirotaro

Publication type:

Article

Influence of buffer surface preparation on the quality of Al x Ga1- x As/GaAs quantum wells studied by optical orientation experiments.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 11, p. 1157, doi. 10.1007/s10854-007-9255-z

By:

Mejía-García, C.;
Winter, A.;
López-López, M.;
Gilinsky, A.;
Pascher, H.

Publication type:

Article

Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers.

Published in:

Russian Physics Journal, 2023, v. 65, n. 10, p. 1732, doi. 10.1007/s11182-023-02823-5

By:

Parchinskiy, P. B.;
Gazizulina, A. S.;
Nasirov, A. A.

Publication type:

Article

Exploring Metal‐Organic Molecular Beam Epitaxy as an Alternative Pathway towards 2D Transition Metal Dichalcogenides WSe2 and WS2.

Published in:

Small Structures, 2024, v. 5, n. 12, p. 1, doi. 10.1002/sstr.202400306

By:

Schütze, Adrian;
Schädlich, Philip;
Seyller, Thomas;
Göhler, Fabian

Publication type:

Article

Transport Property Evolution in 2H‐MoTe2−x Mediated by Te‐Deficiency‐Induced Mirror Twin Boundary Networks.

Published in:

Small Structures, 2024, v. 5, n. 7, p. 1, doi. 10.1002/sstr.202400027

By:

Zhang, Yinuo;
Li, Xueyan;
Li, Yuang;
Wu, Di;
Miao, Xuecen;
Li, Lan;
Min, Tai;
Pan, Yi

Publication type:

Article