Works matching IS 09574522 AND DT 2010 AND VI 21 AND IP 1
Results: 15
Controllable synthesis and luminescence property of LnPO<sub>4</sub> (Ln = La, Gd, Y) nanocrystals.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 38, doi. 10.1007/s10854-009-9866-7
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Microstructure and properties of Al-doped ZnO thin films by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 33, doi. 10.1007/s10854-009-9865-8
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Selective growth of carbon nanotubes using catalyst poisoning and geometric trench.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 16, doi. 10.1007/s10854-009-9862-y
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Development of Sn–Zn lead-free solders bearing alloying elements.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 1, doi. 10.1007/s10854-009-0014-1
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Temperature measurement at flip chip solder joint during electromigration test.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 53, doi. 10.1007/s10854-009-9868-5
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Effect of rare earth element additions on the impression creep of Sn–9Zn solder alloy.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 58, doi. 10.1007/s10854-009-9870-y
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A new luminescent molecular based terbium hybrid material containing both organic polymeric chains and inorganic silica networks.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 65, doi. 10.1007/s10854-009-9871-x
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Structural and magnetic properties of nanocrystalline Mg–Cd ferrites prepared by oxalate co-precipitation method.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 96, doi. 10.1007/s10854-009-9875-6
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In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 88, doi. 10.1007/s10854-009-9874-7
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Sublimation growth of titanium nitride crystals.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 78, doi. 10.1007/s10854-009-9873-8
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Physical and electrical properties of polyimide/ceramic hybrid films prepared via non-hydrolytic sol–gel process.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 104, doi. 10.1007/s10854-009-9876-5
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Influence of sputtering power on the physical properties of magnetron sputtered molybdenum oxide films.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 45, doi. 10.1007/s10854-009-9867-6
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- Article
Properties of surface treated transparent conducting single walled carbon nanotube films.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 72, doi. 10.1007/s10854-009-9872-9
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Effect of γ-irradiation on the frequency-independent parameters of an equivalent circuit for two-dimensional island platinum films.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 20, doi. 10.1007/s10854-009-9863-x
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- Article
Synthesis, structural analysis and microwave dielectric properties of Bi<sub> x</sub>Ln<sub>1− x</sub>TiTaO<sub>6</sub> (Ln = Ce, Pr and Nd) Ceramics.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 1, p. 27, doi. 10.1007/s10854-009-9864-9
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