Works matching IS 09574522 AND DT 2008 AND VI 19
Results: 291
Effect of the soldering time on the formation of interfacial structure between Sn–Ag–Zn lead-free solder and Cu substrate.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1160, doi. 10.1007/s10854-007-9505-0
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Ca<sub>4</sub>La<sub>2</sub>Ti<sub>5</sub>O<sub>17</sub>: a novel low loss dielectric ceramics in the CaO–La<sub>2</sub>O<sub>3</sub>–TiO<sub>2 </sub>system.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1153, doi. 10.1007/s10854-007-9503-2
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Impedance spectroscopy analysis of SnO<sub>2</sub> thick-films gas sensors.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1169, doi. 10.1007/s10854-007-9517-9
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- Article
Effect of excess Pb in PbTiO<sub>3</sub> precursors on ferroelectric and fatigue property of sol–gel derived PbTiO<sub>3</sub>/PbZr<sub>0.3</sub>Ti<sub>0.7</sub>O<sub>3</sub>/PbTiO<sub>3</sub> thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1191, doi. 10.1007/s10854-007-9524-x
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High-yield fabrication of t-Se nanowires via hydrothermal method and their photoconductivity.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1209, doi. 10.1007/s10854-007-9535-7
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Microstructure, dielectric and photoluminescence properties of Tm-doped Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3 </sub>thin films fabricated by sol–gel method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1184, doi. 10.1007/s10854-007-9523-y
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Structural, optical and microscopic properties of chemically deposited In<sub>2</sub>Se<sub>3</sub> thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1252, doi. 10.1007/s10854-008-9585-5
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- Article
Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1197, doi. 10.1007/s10854-007-9527-7
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Simple synthesis of ZnS nanoparticles in alkaline medium.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1206, doi. 10.1007/s10854-007-9529-5
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Fabrication and microstructures of sequentially electroplated Au-rich, eutectic Au/Sn alloy solder.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1176, doi. 10.1007/s10854-007-9522-z
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- Article
Pure-blue tandem OLEDs based on terfluorenes compounds.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1202, doi. 10.1007/s10854-007-9528-6
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Surface modification and characterization of indium–tin oxide for organic light-emitting devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1214, doi. 10.1007/s10854-007-9545-5
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- Article
Tin dioxide on semiconductor as material for new electronics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1222, doi. 10.1007/s10854-007-9546-4
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- Article
Fabrication and dielectric properties of textured Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> ceramics by RTGG method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1228, doi. 10.1007/s10854-007-9547-3
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- Article
Effect of plasma treated sol-gel dielectric towards the morphology of pentacene.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1247, doi. 10.1007/s10854-008-9580-x
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- Article
Electrical properties of LaBi<sub>8</sub>Fe<sub>5</sub>Ti<sub>3</sub>O<sub>27</sub>.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1240, doi. 10.1007/s10854-008-9578-4
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The influence of surface cleaning on the stability of Pd/GaAs contacts.
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- 2008
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- Correction Notice
Effects of glass components on crystallization and dielectric properties of BST glass–ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1233, doi. 10.1007/s10854-008-9566-8
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Preparation and luminescent properties of CaTiO<sub>3</sub>: Pr<sup>3+</sup>, Al<sup>3+</sup> persistent phosphors by nitrate-citric acid combustion method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1147, doi. 10.1007/s10854-007-9502-3
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Electrical properties of (K<sub>0.5</sub>Na<sub>0.5</sub>)<sub>1− x </sub>Ag<sub> x </sub>NbO<sub>3</sub> lead-free piezoelectric ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1054, doi. 10.1007/s10854-007-9458-3
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Preparation and ferroelectric properties of (124)-oriented SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> ferroelectric thin film on (110)-oriented LaNiO<sub>3</sub> electrode.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1031, doi. 10.1007/s10854-007-9444-9
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DC electrical conductivity of poly(methyl methacrylate)/carbon black composites at low temperatures.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1035, doi. 10.1007/s10854-007-9445-8
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- Article
Comparison of Ni/Ti and Ni ohmic contacts on n-type 6H–SiC.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1039, doi. 10.1007/s10854-007-9446-7
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Azo dye based poly(alkyloxymethacrylate)s and their spacer effect on optical data storage.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1045, doi. 10.1007/s10854-007-9450-y
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- Article
Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1
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Growth and electrical characterization of the lead magnesium niobate-lead titanate (PMN-PT) single crystals for piezoelectric devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1058, doi. 10.1007/s10854-007-9459-2
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- Article
The phase conversion of precursor powders for powder melting process YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7− x </sub> superconductors.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1069, doi. 10.1007/s10854-007-9468-1
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Refractive index of polymethylmethacrylate oriented by fluid temperature under electrical field.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1064, doi. 10.1007/s10854-007-9467-2
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- Article
Effect of substrate temperature on structural, optical and electrical properties of ZnO thin films deposited by pulsed laser deposition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1073, doi. 10.1007/s10854-007-9469-0
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Thermoelectric power and AC electrical properties of PAN-based carbon fiber composites.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1079, doi. 10.1007/s10854-007-9470-7
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Characterization of electrosynthesized iron diselenide thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1086, doi. 10.1007/s10854-007-9471-6
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- Article
Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1092, doi. 10.1007/s10854-007-9473-4
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Direct laminating of silver foils on copper substrates.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1097, doi. 10.1007/s10854-007-9474-3
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Tape casting of nickel manganite NTC ceramics for chip thermistors.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1100, doi. 10.1007/s10854-007-9475-2
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- Article
PTC effect of carbon fiber filled EPDM rubber composite.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1105, doi. 10.1007/s10854-007-9476-1
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- Article
Influence of tetragonality and secondary phase on the Curie temperature for barium titanate ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1109, doi. 10.1007/s10854-007-9477-0
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- Article
Studies on the thermoelectric effect in semiconducting ZnTe thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1114, doi. 10.1007/s10854-007-9483-2
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- Article
Effect of manganese and cobalt doping on conductivity of ZnO based varistors: a study by complex plane modulus.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1122, doi. 10.1007/s10854-007-9484-1
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- Article
Thermal conductivity and nanoindentation hardness of as-prepared and oxidized porous silicon layers.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1128, doi. 10.1007/s10854-007-9485-0
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- Article
Room temperature deposition and properties of ZnO:Al thin films by nonreactive DC magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1135, doi. 10.1007/s10854-007-9489-9
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Omega-Scan: an X-ray tool for the characterization of crystal properties.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 351, doi. 10.1007/s10854-007-9479-y
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- Article
Raman scattering characterization of Ge-composition in bulk Si<sub>1− x </sub>Ge<sub> x </sub> with compositional variation.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 294, doi. 10.1007/s10854-007-9514-z
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Correlation between the free carrier lifetime and total amount of deep centers in ZnO single crystals.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 311, doi. 10.1007/s10854-007-9490-3
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Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 194, doi. 10.1007/s10854-007-9491-2
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Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 263, doi. 10.1007/s10854-007-9481-4
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Microstructure, dielectric and electromechanical properties of PLSZFT nanoceramics for piezoelectric applications.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 11, p. 1140, doi. 10.1007/s10854-007-9492-1
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- Article
White beam topography of 300 mm Si wafers.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 269, doi. 10.1007/s10854-007-9480-5
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SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 176, doi. 10.1007/s10854-007-9515-y
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- Article
Study of Schottky diodes made on Mn doped p-type InP.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 333, doi. 10.1007/s10854-007-9508-x
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Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 289, doi. 10.1007/s10854-007-9510-3
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- Article