Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 12
Results: 20
Effect of the soldering time on the formation of interfacial structure between Sn–Ag–Zn lead-free solder and Cu substrate.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1160, doi. 10.1007/s10854-007-9505-0
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- Article
Ca<sub>4</sub>La<sub>2</sub>Ti<sub>5</sub>O<sub>17</sub>: a novel low loss dielectric ceramics in the CaO–La<sub>2</sub>O<sub>3</sub>–TiO<sub>2 </sub>system.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1153, doi. 10.1007/s10854-007-9503-2
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- Article
Impedance spectroscopy analysis of SnO<sub>2</sub> thick-films gas sensors.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1169, doi. 10.1007/s10854-007-9517-9
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- Article
Effect of excess Pb in PbTiO<sub>3</sub> precursors on ferroelectric and fatigue property of sol–gel derived PbTiO<sub>3</sub>/PbZr<sub>0.3</sub>Ti<sub>0.7</sub>O<sub>3</sub>/PbTiO<sub>3</sub> thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1191, doi. 10.1007/s10854-007-9524-x
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- Article
High-yield fabrication of t-Se nanowires via hydrothermal method and their photoconductivity.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1209, doi. 10.1007/s10854-007-9535-7
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- Article
Microstructure, dielectric and photoluminescence properties of Tm-doped Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3 </sub>thin films fabricated by sol–gel method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1184, doi. 10.1007/s10854-007-9523-y
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- Article
Structural, optical and microscopic properties of chemically deposited In<sub>2</sub>Se<sub>3</sub> thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1252, doi. 10.1007/s10854-008-9585-5
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- Article
Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1197, doi. 10.1007/s10854-007-9527-7
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- Article
Simple synthesis of ZnS nanoparticles in alkaline medium.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1206, doi. 10.1007/s10854-007-9529-5
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- Article
Fabrication and microstructures of sequentially electroplated Au-rich, eutectic Au/Sn alloy solder.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1176, doi. 10.1007/s10854-007-9522-z
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- Article
Surface modification and characterization of indium–tin oxide for organic light-emitting devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1214, doi. 10.1007/s10854-007-9545-5
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- Article
Pure-blue tandem OLEDs based on terfluorenes compounds.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1202, doi. 10.1007/s10854-007-9528-6
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- Article
Tin dioxide on semiconductor as material for new electronics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1222, doi. 10.1007/s10854-007-9546-4
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- Article
Fabrication and dielectric properties of textured Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> ceramics by RTGG method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1228, doi. 10.1007/s10854-007-9547-3
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- Article
Effect of plasma treated sol-gel dielectric towards the morphology of pentacene.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1247, doi. 10.1007/s10854-008-9580-x
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- Article
Electrical properties of LaBi<sub>8</sub>Fe<sub>5</sub>Ti<sub>3</sub>O<sub>27</sub>.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1240, doi. 10.1007/s10854-008-9578-4
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- Article
The influence of surface cleaning on the stability of Pd/GaAs contacts.
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- 2008
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- Correction Notice
Effects of glass components on crystallization and dielectric properties of BST glass–ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1233, doi. 10.1007/s10854-008-9566-8
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- Article
Preparation and luminescent properties of CaTiO<sub>3</sub>: Pr<sup>3+</sup>, Al<sup>3+</sup> persistent phosphors by nitrate-citric acid combustion method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1147, doi. 10.1007/s10854-007-9502-3
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- Article
Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1
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- Article