Works matching IS 09574522 AND DT 2008 AND VI 19

Results: 291
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    Tin dioxide on semiconductor as material for new electronics.

    Published in:
    Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1222, doi. 10.1007/s10854-007-9546-4
    By:
    • Fink, D.;
    • Kiv, A.;
    • Golovanov, V.;
    • Chen, J.;
    • Chandra, A.;
    • Ivanovskaya, M.;
    • Khirunenko, L.;
    • Fuks, D.
    Publication type:
    Article
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    White beam topography of 300 mm Si wafers.

    Published in:
    Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 269, doi. 10.1007/s10854-007-9480-5
    By:
    • Danilewsky, A. N.;
    • Wittge, J.;
    • Rack, A. T.;
    • Weitkamp, T.;
    • Simon, R.;
    • Baumbach, T.;
    • McNally, P.
    Publication type:
    Article
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    Structure properties of carbon implanted silicon layers.

    Published in:
    Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 254, doi. 10.1007/s10854-007-9533-9
    By:
    • Nussupov, K. Kh.;
    • Beisenkhanov, N. B.;
    • Valitova, I. V.;
    • Mit', K. A.;
    • Mukhamedshina, D. M.;
    • Dmitrieva, E. A.
    Publication type:
    Article
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