Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 8/9
Results: 43
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 687, doi. 10.1007/s10854-007-9380-8
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Optical and structural properties of SiC nanocrystals.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 682, doi. 10.1007/s10854-007-9379-1
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The recent advances of research on p-type ZnO thin film.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 727, doi. 10.1007/s10854-007-9398-y
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Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 815, doi. 10.1007/s10854-007-9472-5
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Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 863, doi. 10.1007/s10854-007-9526-8
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Microstructure and luminescence properties of Co-doped SnO<sub>2</sub> nanoparticles synthesized by hydrothermal method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 868, doi. 10.1007/s10854-007-9543-7
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Investigation of deep levels in InGaAs channels comprising thin layers of InAs.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 797, doi. 10.1007/s10854-007-9451-x
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A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 678, doi. 10.1007/s10854-007-9378-2
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Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x
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Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6
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Independent control of InAs quantum dot density and size on Al<sub>x</sub>Ga<sub>1–x</sub>As surfaces.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 714, doi. 10.1007/s10854-007-9389-z
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The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 704, doi. 10.1007/s10854-007-9386-2
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Cobalt substituted ZnO thin films: a potential candidate for spintronics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 849, doi. 10.1007/s10854-007-9501-4
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Growth and characterization of III-N bulk crystals.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 845, doi. 10.1007/s10854-007-9500-5
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Structural and electrical properties of thermally evaporated 1,4-Bis-(2-hydroxyethylamino)-9,10-anthraquinone films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 841, doi. 10.1007/s10854-007-9488-x
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Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 744, doi. 10.1007/s10854-007-9401-7
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Growth condition dependence of zinc oxide nanostructures on Si substrates in an electrochemical process.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 908, doi. 10.1007/s10854-008-9680-7
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Tunneling currents through ultra thin HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> triple layer gate dielectrics for advanced MIS devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 902, doi. 10.1007/s10854-008-9679-0
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High- k gate stack Hf<sub> x </sub>Ti<sub>1− x </sub>ON/SiO<sub>2</sub> for SiC MOS devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 894, doi. 10.1007/s10854-008-9623-3
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Electronic and magnetic properties of novel layered cobalt dioxides A <sub> x </sub>CoO<sub>2</sub> with A = Li, Na, and K.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 883, doi. 10.1007/s10854-008-9573-9
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Electrical characterization of 4H–SiC Schottky diodes with a RuO<sub>2</sub> and a RuWO<sub> x </sub> Schottky contacts.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 783, doi. 10.1007/s10854-007-9409-z
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Investigation of NiO<sub> x </sub>-based contacts on p-GaN.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 855, doi. 10.1007/s10854-007-9520-1
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Pulsed laser deposited ZnO films and their humidity sensing behavior.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 788, doi. 10.1007/s10854-007-9414-2
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Negative magnetoresistance in SiC heteropolytype junctions.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 793, doi. 10.1007/s10854-007-9417-z
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Characterization of deep centers in semi-insulating SiC and HgI<sub>2</sub>: Application of discharge current transient spectroscopy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 810, doi. 10.1007/s10854-007-9454-7
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Molecular beam epitaxy of semipolar AlN( $$11\bar{2}2$$ ) and GaN( $$11\bar{2}2$$ ) on m-sapphire.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 805, doi. 10.1007/s10854-007-9453-8
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Morphology control of 1D ZnO nanostructures grown by metal-organic chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 760, doi. 10.1007/s10854-007-9404-4
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Deep UV light emitting diodes grown by gas source molecular beam epitaxy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 764, doi. 10.1007/s10854-007-9405-3
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Temperature dependence of ZnO thin films grown on Si substrate.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 749, doi. 10.1007/s10854-007-9402-6
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Preface: 2007 Semiconducting and Insulating Materials Conference.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 677, doi. 10.1007/s10854-008-9722-1
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Growth and characteristics of ternary Zn<sub>1− x </sub>Mg<sub> x </sub>O films using magnetron co-sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 755, doi. 10.1007/s10854-007-9403-5
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Cooperative Jahn–Teller transition in Li[Li<sub> x </sub>Mn<sub>2– x </sub>]O<sub>4</sub>: a muon-spin rotaion/relaxation (μSR) view.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 875, doi. 10.1007/s10854-007-9548-2
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Depth profiles and concentration percentages of SiO<sub>2</sub> and SiO<sub> x </sub> induced by ion bombardment of a silicon (100) target.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 898, doi. 10.1007/s10854-008-9658-5
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Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 692, doi. 10.1007/s10854-007-9381-7
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Low thermal drift in highly sensitive doped channel Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs/In<sub>0.2</sub>Ga<sub>0.8</sub>As micro-Hall element.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 776, doi. 10.1007/s10854-007-9408-0
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Radiation effects in natural quartz crystals.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 709, doi. 10.1007/s10854-007-9388-0
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InP based semiconductor structures for radiation detection.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 770, doi. 10.1007/s10854-007-9407-1
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Structural and magnetic properties of MnAs/GaAs ferromagnetic semiconductor nanocomposite material.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 740, doi. 10.1007/s10854-007-9400-8
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A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond from temperature-dependent majority-carrier concentration.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 720, doi. 10.1007/s10854-007-9390-6
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Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 801, doi. 10.1007/s10854-007-9452-9
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Mn and other magnetic impurities in GaN and other III–V semiconductors – perspective for spintronic applications.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 828, doi. 10.1007/s10854-007-9486-z
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Nitrogen doping of SiC thin films deposited by RF magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 835, doi. 10.1007/s10854-007-9487-y
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Latest developments in GaN-based quantum devices for infrared optoelectronics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 821, doi. 10.1007/s10854-007-9482-3
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