Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 1
Results: 15
Stability of impurity–vacancy pairs in germanium carbide.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 25, doi. 10.1007/s10854-007-9132-9
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Characterization of Sn-doped BST thin films on LaNiO<sub>3</sub>–coated Si substrate.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 61, doi. 10.1007/s10854-007-9151-6
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Field emission properties of carbon nanotube pastes examined using design of experiments.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 17, doi. 10.1007/s10854-007-9265-x
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Influences of particle size upon room temperature structure of BaTiO<sub>3</sub> thin films on p-Si substrates.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 85, doi. 10.1007/s10854-007-9353-y
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Effect of zinc additions on structure and properties of Sn–Ag eutectic lead-free solder alloy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 81, doi. 10.1007/s10854-007-9289-2
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Hydrothermal preparation and properties of nanocrystalline ZnS:Mn.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 1, doi. 10.1007/s10854-007-9340-3
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Electrical properties of some Y<sub>2</sub>O<sub>3</sub> and/or Fe<sub>2</sub>O<sub>3</sub>-containing lithium silicate glasses and glass-ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 5, doi. 10.1007/s10854-007-9288-3
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Zero and negative temperature coefficients of resistivity of rapidly solidified Bi–Sn alloys using melt-spinning technique.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 91, doi. 10.1007/s10854-007-9315-4
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Characterization of poly(vinylidene fluoride-trifluoroethylene) 50/50 copolymer films as a gate dielectric.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 45, doi. 10.1007/s10854-007-9266-9
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Preparation and characterization of Co–Fe–B thin films produced by electroless deposition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 51, doi. 10.1007/s10854-007-9341-2
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The effect of glass addition on the dielectric properties of barium strontium titanate.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 39, doi. 10.1007/s10854-007-9224-6
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Dielectric and piezoelectric properties of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>–BaNb<sub>2</sub>O<sub>6</sub> lead-free piezoelectric ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 29, doi. 10.1007/s10854-007-9223-7
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Activation kinetics of the As acceptor in HgCdTe.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 67, doi. 10.1007/s10854-007-9269-6
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Electrical properties and interfacial reaction of BGA package with underfill.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 75, doi. 10.1007/s10854-007-9282-9
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- Article
Encapsulation of silver particles using co-axial jetting.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 33, doi. 10.1007/s10854-007-9278-5
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