Works matching DE "FERROELECTRIC thin films"
Results: 1277
Synthesis and Solution Processing of Nylon‐5 Ferroelectric Thin Films: The Renaissance of Odd‐Nylons?
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- Macromolecular Chemistry & Physics, 2020, v. 221, n. 5, p. 1, doi. 10.1002/macp.201900468
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Templating Influence of Regulated Inorganic Framework in Two‐Dimensional Ferroelastic Perovskites: (C<sub>3</sub>H<sub>5</sub>CH<sub>2</sub>NH<sub>3</sub>)<sub>2</sub>[MCl<sub>4</sub>] (M=Mn and Cd).
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- Chemistry - A European Journal, 2023, v. 29, n. 18, p. 1, doi. 10.1002/chem.202203606
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Boosted Photocurrent via Heating BiFeo<sub>3</sub> Thin Film for UV Photodetector at Wide Temperature Range.
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- Advanced Functional Materials, 2023, v. 33, n. 35, p. 1, doi. 10.1002/adfm.202303408
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Highly Enhanced Polarization Switching Speed in HfO<sub>2</sub>‐based Ferroelectric Thin Films via a Composition Gradient Strategy.
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- Advanced Functional Materials, 2023, v. 33, n. 31, p. 1, doi. 10.1002/adfm.202301746
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Mechanically Driven Reversible Polarization Switching in Imprinted BiFeO<sub>3</sub> Thin Films.
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- Advanced Functional Materials, 2023, v. 33, n. 31, p. 1, doi. 10.1002/adfm.202213787
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Controlling the Polarization in Ferroelectric PZT Films via the Epitaxial Growth Conditions.
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- Advanced Functional Materials, 2023, v. 33, n. 28, p. 1, doi. 10.1002/adfm.202214849
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Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al<sub>2</sub>O<sub>3</sub>‐Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Al<sub>2</sub>O<sub>3</sub> Triple‐Layer Structure.
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- Advanced Functional Materials, 2023, v. 33, n. 9, p. 1, doi. 10.1002/adfm.202206637
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Deterministic Manipulation of Multi‐State Polarization Switching in Multiferroic Thin Films (Adv. Funct. Mater. 8/2023).
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- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202370050
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Synergistic Enhancement of Luminescent and Ferroelectric Properties through Multi‐Clipping of Tetraphenylethenes.
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- Advanced Functional Materials, 2023, v. 33, n. 3, p. 1, doi. 10.1002/adfm.202208157
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Synergistic Enhancement of Luminescent and Ferroelectric Properties through Multi‐Clipping of Tetraphenylethenes.
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- Advanced Functional Materials, 2023, v. 33, n. 3, p. 1, doi. 10.1002/adfm.202208157
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Orientation Independent Growth of Uniform Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films on Silicon for High‐Density 3D Memory Applications.
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- Advanced Functional Materials, 2022, v. 32, n. 49, p. 1, doi. 10.1002/adfm.202209604
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Multifunctional MoTe<sub>2</sub> Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping.
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- Advanced Functional Materials, 2022, v. 32, n. 17, p. 1, doi. 10.1002/adfm.202110415
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Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO<sub>2</sub> Thin Film Capacitors.
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- Advanced Functional Materials, 2022, v. 32, n. 9, p. 1, doi. 10.1002/adfm.202108876
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Intrinsic Nature of Negative Capacitance in Multidomain Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Ferroelectric/Dielectric Heterostructures.
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- Advanced Functional Materials, 2022, v. 32, n. 2, p. 1, doi. 10.1002/adfm.202108494
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Antiferroelectric Anisotropy of Epitaxial PbHfO<sub>3</sub> Films for Flexible Energy Storage.
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- Advanced Functional Materials, 2021, v. 31, n. 42, p. 1, doi. 10.1002/adfm.202105060
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Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe<sub>2</sub>.
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- Advanced Functional Materials, 2021, v. 31, n. 36, p. 1, doi. 10.1002/adfm.202102721
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Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage.
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- Advanced Functional Materials, 2021, v. 31, n. 19, p. 1, doi. 10.1002/adfm.202011029
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Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO<sub>2</sub>‐Based Ferroelectric Field‐Effect Transistor.
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- Advanced Functional Materials, 2021, v. 31, n. 17, p. 1, doi. 10.1002/adfm.202011077
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Hysteresis, Loss and Nonlinearity in Epitaxial PbZr<sub>0.55</sub>Ti<sub>0.45</sub>O<sub>3</sub> Films: A Polarization Rotation Model.
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- Advanced Functional Materials, 2020, v. 30, n. 52, p. 1, doi. 10.1002/adfm.202005397
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Observation of Strong Bulk Damping‐Like Spin‐Orbit Torque in Chemically Disordered Ferromagnetic Single Layers.
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- Advanced Functional Materials, 2020, v. 30, n. 48, p. 1, doi. 10.1002/adfm.202005201
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Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures.
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- Advanced Functional Materials, 2020, v. 30, n. 48, p. 1, doi. 10.1002/adfm.202003571
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Photoferroelectric Thin Films for Flexible Systems by a Three‐in‐One Solution‐Based Approach.
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- Advanced Functional Materials, 2020, v. 30, n. 32, p. 1, doi. 10.1002/adfm.202001897
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Ferroelectric Domain Wall Memristor.
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- Advanced Functional Materials, 2020, v. 30, n. 28, p. 1, doi. 10.1002/adfm.202000109
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- Article
Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO<sub>3</sub> Multiferroic Films.
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- Advanced Functional Materials, 2020, v. 30, n. 22, p. 1, doi. 10.1002/adfm.202000343
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Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba<sub>x</sub>Sr<sub>1‐x</sub>TiO<sub>3</sub> and MoS<sub>2</sub> Channel.
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- Advanced Functional Materials, 2020, v. 30, n. 7, p. N.PAG, doi. 10.1002/adfm.201908210
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Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al<sub>2</sub>O<sub>3</sub>/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> Bilayer Thin Film.
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201808228
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A Solar Transistor and Photoferroelectric Memory.
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- Advanced Functional Materials, 2018, v. 28, n. 17, p. 1, doi. 10.1002/adfm.201707099
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Synthesis of (Pb,La) (Zr,Ti)O3 films using a diol based sol–gel route.
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- Journal of Materials Science, 1998, v. 33, n. 3, p. 659, doi. 10.1023/A:1004377409565
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Phase field modeling of domain evolution in ferroelectric materials in the context of size effects.
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- PAMM: Proceedings in Applied Mathematics & Mechanics, 2014, v. 14, n. 1, p. 443, doi. 10.1002/pamm.201410209
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The polarization process of ferroelectric materials in the framework of variational inequalities.
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- ZAMM -- Journal of Applied Mathematics & Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 2020, v. 100, n. 6, p. 1, doi. 10.1002/zamm.201900329
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Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films.
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- Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400151
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- Article
Optimizing the Ferroelectric Performance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Epitaxial Film by La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> Capping Layer.
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- Advanced Electronic Materials, 2024, v. 10, n. 10, p. 1, doi. 10.1002/aelm.202400136
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3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films.
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- Advanced Electronic Materials, 2024, v. 10, n. 10, p. 1, doi. 10.1002/aelm.202400085
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Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere.
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- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300893
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Advancing Energy‐Storage Performance in Freestanding Ferroelectric Thin Films: Insights from Phase‐Field Simulations.
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- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400001
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- Article
Synthesis and Phase Transition of Large‐Area Layered Ferroelectric Semiconductor α‐In<sub>2</sub>Se<sub>3</sub> via 2D Solid‐Phase Crystallization.
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- Advanced Electronic Materials, 2024, v. 10, n. 7, p. 1, doi. 10.1002/aelm.202300880
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Conduction Modulation of Solution‐Processed 2D Materials.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300799
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- Article
Complete Selective Switching of Ferroelastic Domain Stripes in Multiferroic Thin Films by Tip Scanning.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300640
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Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300449
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Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO<sub>3</sub> Thin Films.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300744
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Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300698
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- Article
Reliable Accessibility of Intermediate Polarization States in Textured Ferroelectric Al<sub>0.66</sub>Sc<sub>0.34</sub>N Thin Film.
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- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300591
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Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Graphene FETs.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300511
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- Article
Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300497
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Dynamic Control of Piezoelectricity Enhancement via Modulation of the Bulk Photovoltaic Effect in a BiFeO<sub>3</sub> Thin Film.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200785
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Electrical Field Driven Structural Evolutions of Polymorphic Nanodomains in Ferroelectric Ba(Zr,Ti)O<sub>3</sub> Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200465
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- Article
Resistive Switching in Ferroelectric Bi<sub>2</sub>FeCrO<sub>6</sub> Thin Films and Impact on the Photovoltaic Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200276
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- Article
Ferroelectric BaTiO<sub>3</sub> Based Multi‐Effects Coupled Materials and Devices.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200190
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- Article
Temperature‐Dependent Phase Transitions in Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Mixed Oxides: Indications of a Proper Ferroelectric Material.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200265
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- Article
Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> Films Assisted by Nanocavities.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200077
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- Article