Works matching DE "PHASE change memory"

Results: 292

Fragile-to-Strong Crossover in Supercooled Liquid Ag-In-Sb-Te Studied by Ultrafast Calorimetry.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 30, p. 4851, doi. 10.1002/adfm.201501607

By:

Orava, Jiri;
Hewak, Daniel W.;
Greer, A. Lindsay

Publication type:

Article

Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8

By:

Wang, Ruobing;
Yuan, Zhenhui;
Chen, Xin;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20679, doi. 10.1007/s10854-021-06581-3

By:

Tan, Zhilong;
Zongyan, Zhao;
Wen, Ming;
Guo, Junmei;
Chen, Jialin;
Wu, Xiaofei;
Song, Zhihao

Publication type:

Article

Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6408, doi. 10.1007/s10854-021-05358-y

By:

Sun, Song;
Hu, Yifeng;
Lai, Tianshu;
Zhu, Xiaoqin

Publication type:

Article

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12476, doi. 10.1007/s10854-020-03794-w

By:

Sun, Song;
Hu, Yifeng;
Lai, Tianshu;
Zhu, Xiaoqin

Publication type:

Article

Thermally stable tungsten and titanium doped antimony tellurium films for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10912, doi. 10.1007/s10854-020-03642-x

By:

Li, Lin;
Song, Sannian;
Xue, Yuan;
Chen, Xin;
Zhao, Jin;
Shen, Jiabin;
Song, Zhitang

Publication type:

Article

Investigation on thermal stability of vanadium-doped Sb2Te phase change material.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5879, doi. 10.1007/s10854-019-02726-7

By:

Wu, Liangcai;
Li, Tao;
Ji, Xinglong;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5833, doi. 10.1007/s10854-019-02605-1

By:

Wang, Hao;
Song, Sannian;
Song, Zhitang;
Zhou, Zhiguo;
Yao, Dongning;
Lv, Shilong

Publication type:

Article

Insulator–metal transition and ultrafast crystallization of Ga40Sb60/Sn15Sb85 multiple interfacial nanocomposite films.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19302, doi. 10.1007/s10854-019-02290-0

By:

Guo, Xuan;
Hu, Yifeng;
Chou, Qingqian;
Lai, Tianshu

Publication type:

Article

SbSe/ZnSb stacked thin films with multi-level phase transition for high density phase change memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15024, doi. 10.1007/s10854-019-01875-z

By:

Zhao, Zihan;
Hua, Sicong;
Shen, Bo;
Zhai, Jiwei;
Lai, Tianshu;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Improvement of thermal stability of antimony film by cerium addition for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 17003, doi. 10.1007/s10854-018-9796-3

By:

Zhang, Jianhao;
Zou, Hua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sun, Yuemei;
Song, Zhitang

Publication type:

Article

Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16172, doi. 10.1007/s10854-018-9706-8

By:

Guo, Xuan;
Hu, Yifeng;
Chou, Qingqian;
Lai, Tianshu;
Zhu, Xiaoqin

Publication type:

Article

Improving the thermal stability and phase change speed in SbSe films through Er doping.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17719, doi. 10.1007/s10854-017-7710-z

By:

Zou, Hua;
Zhu, Xiaoqin;
Hu, Yifeng;
Sui, Yongxing;
Zhang, Jianhao;
Song, Zhitang

Publication type:

Article

Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 923, doi. 10.1007/s10854-016-5608-9

By:

Shen, Lanlan;
Song, Sannian;
Song, Zhitang;
Li, Le;
Guo, Tianqi;
Cheng, Yan;
Wu, Liangcai;
Liu, Bo;
Feng, Songlin

Publication type:

Article

High speed and low power consumption of superlattice-like Ge/SbSe thin films for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2183, doi. 10.1007/s10854-015-4008-x

By:

Wu, Weihua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sui, Yongxing;
Yuan, Li;
Zheng, Long;
Zou, Hua;
Sun, Yuemei;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Improvement of the thermal stability and power consumption of SbSe through nitrogen doping.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9700, doi. 10.1007/s10854-015-3637-4

By:

Wu, Weihua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sui, Yongxing;
Xue, Jianzhong;
Yuan, Li;
Song, Sannian;
Song, Zhitang

Publication type:

Article

CrSbTe materials for phase change memory with high speed and good thermal stability performance.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4138, doi. 10.1007/s10854-015-2958-7

By:

Wang, Qing;
Liu, Bo;
Xia, Yangyang;
Zhang, Zhonghua;
Ji, Xinglong;
Song, Sannian;
Song, Zhitang;
Xi, Wei;
Yao, Dongning;
Lv, Shilong;
Feng, Songlin

Publication type:

Article

Multi-Step Resistance Memory Behavior in Ge 2 Sb 2 Te 5 /GeTe Stacked Chalcogenide Films.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 8, doi. 10.1080/10584587.2012.741367

By:

Hu, Yifeng;
Sun, Mingcheng;
Song, Sannian;
Song, Zhitang;
Zhai, Jiwei

Publication type:

Article

Si/SnSe 2 Multilayer Films for Phase Change Memory Applications.

Published in:

2013

By:

Sun, Mingcheng;
Hu, Yifeng;
Shen, Bo;
Zhai, Jiwei;
Song, Sannian;
Song, Zhitang

Publication type:

Script/Play

All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect.

Published in:

Photonics, 2022, v. 9, n. 3, p. 132, doi. 10.3390/photonics9030132

By:

Sun, Wei;
Lu, Yegang;
Miao, Libo;
Zhang, Yu

Publication type:

Article

On-Chip Integrated Photonic Devices Based on Phase Change Materials.

Published in:

Photonics, 2021, v. 8, n. 6, p. 205, doi. 10.3390/photonics8060205

By:

Nisar, Muhammad Shemyal;
Yang, Xing;
Lu, Liangjun;
Chen, Jianping;
Zhou, Linjie

Publication type:

Article

Microstructural failure in Ge2 Sb2 Te5 phase change memory cell.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 2, p. 435, doi. 10.1002/pssb.201350003

By:

Kim, Yong Tae;
Kim, Young Hwan

Publication type:

Article

Resolving multiple propagation paths in time of flight range cameras using direct and global separation methods.

Published in:

Optical Engineering, 2015, v. 54, n. 11, p. 1, doi. 10.1117/1.OE.54.11.113109

By:

Whyte, Refael;
Streeter, Lee;
Cree, Michael J.;
Dorrington, Adrian A.

Publication type:

Article

Crystallization kinetics of nanoconfined GeTe slabs in GeTe/TiTe2-like superlattices for phase change memories.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-53192-z

By:

Acharya, Debdipto;
Abou El Kheir, Omar;
Campi, Davide;
Bernasconi, Marco

Publication type:

Article

Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-46862-z

By:

Wu, Han;
Chen, Lei;
Malinowski, Paul;
Jang, Bo Gyu;
Deng, Qinwen;
Scott, Kirsty;
Huang, Jianwei;
Ruff, Jacob P. C.;
He, Yu;
Chen, Xiang;
Hu, Chaowei;
Yue, Ziqin;
Oh, Ji Seop;
Teng, Xiaokun;
Guo, Yucheng;
Klemm, Mason;
Shi, Chuqiao;
Shi, Yue;
Setty, Chandan;
Werner, Tyler

Publication type:

Article

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-45327-7

By:

Wintersteller, Simon;
Yarema, Olesya;
Kumaar, Dhananjeya;
Schenk, Florian M.;
Safonova, Olga V.;
Abdala, Paula M.;
Wood, Vanessa;
Yarema, Maksym

Publication type:

Article

Encoding multistate charge order and chirality in endotaxial heterostructures.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41780-y

By:

Husremović, Samra;
Goodge, Berit H.;
Erodici, Matthew P.;
Inzani, Katherine;
Mier, Alberto;
Ribet, Stephanie M.;
Bustillo, Karen C.;
Taniguchi, Takashi;
Watanabe, Kenji;
Ophus, Colin;
Griffin, Sinéad M.;
Bediako, D. Kwabena

Publication type:

Article

In-memory photonic dot-product engine with electrically programmable weight banks.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38473-x

By:

Zhou, Wen;
Dong, Bowei;
Farmakidis, Nikolaos;
Li, Xuan;
Youngblood, Nathan;
Huang, Kairan;
He, Yuhan;
David Wright, C.;
Pernice, Wolfram H. P.;
Bhaskaran, Harish

Publication type:

Article

R -Tree for Phase Change Memory.

Published in:

Computer Science & Information Systems, 2017, v. 14, n. 2, p. 347, doi. 10.2298/CSIS160620008J

By:

Elkhan Jabarov;
Byung-Won On;
Gyu Sang Choi;
Myong-Soon Park

Publication type:

Article

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures.

Published in:

International Journal of High Speed Electronics & Systems, 2014, v. 23, n. 1/2, p. -1, doi. 10.1142/S0129156414500049

By:

Dirisaglik, Faruk;
Bakan, Gokhan;
Faraclas, Azer;
Gokirmak, Ali;
Silva, Helena

Publication type:

Article

TRANSIENT AND CYCLIC EFFECTS ON A PCM-COOLED MOBILE DEVICE.

Published in:

Thermal Science, 2015, v. 19, n. 5, p. 1723, doi. 10.2298/TSCI121206112T

By:

Chih Ping TSO;
Fock Lai TAN;
JONY, Jony

Publication type:

Article

Metric and fault-tolerant metric dimension for GeSbTe superlattice chemical structure.

Published in:

PLoS ONE, 2023, v. 18, n. 11, p. 1, doi. 10.1371/journal.pone.0290411

By:

Liqin, Liu;
Shahzad, Khurram;
Rauf, Abdul;
Tchier, Fairouz;
Aslam, Adnan

Publication type:

Article

Toward Software-Equivalent Accuracy on Transformer-Based Deep Neural Networks With Analog Memory Devices.

Published in:

Frontiers in Computational Neuroscience, 2021, v. 15, p. 1, doi. 10.3389/fncom.2021.675741

By:

Spoon, Katie;
Tsai, Hsinyu;
Chen, An;
Rasch, Malte J.;
Ambrogio, Stefano;
Mackin, Charles;
Fasoli, Andrea;
Friz, Alexander M.;
Narayanan, Pritish;
Stanisavljevic, Milos;
Burr, Geoffrey W.

Publication type:

Article

High Temperature Thermal Conductivity of Amorphous Al2 O3 Thin Films Grown by Low Temperature ALD.

Published in:

Advanced Engineering Materials, 2013, v. 15, n. 11, p. 1046, doi. 10.1002/adem.201300132

By:

Cappella, Andrea;
Battaglia, Jean‐Luc;
Schick, Vincent;
Kusiak, Andrzej;
Lamperti, Alessio;
Wiemer, Claudia;
Hay, Bruno

Publication type:

Article

Effect of doping on the crystallization kinetics of phase change memory materials on the basis of Ge-Sb-Te system.

Published in:

Journal of Thermal Analysis & Calorimetry, 2017, v. 127, n. 1, p. 283, doi. 10.1007/s10973-016-5503-x

By:

Babich, Alexey;
Sherchenkov, Alexey;
Kozyukhin, Sergey;
Lazarenko, Petr;
Boytsova, Olga;
Shuliatyev, Alexey

Publication type:

Article

Optimal Sequential and Parallel Algorithms to Compute All Cut Vertices on Trapezoid Graphs.

Published in:

Computational Optimization & Applications, 2004, v. 27, n. 1, p. 95, doi. 10.1023/B:COAP.0000004982.13444.bc

By:

Hota, Mrinmoy;
Pal, Madhumangal;
Pal, Tapan

Publication type:

Article

Phase Memory Control in an Inhomogeneously Broadened Ensemble of Three-Level Systems and Stimulated Photon Echo Formation.

Published in:

Journal of Applied Spectroscopy, 2016, v. 83, n. 4, p. 562, doi. 10.1007/s10812-016-0328-8

By:

Nefediev, L.;
Garnaeva, G.;
Nizamova, E.

Publication type:

Article

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 1, p. 38, doi. 10.1049/ell2.12337

By:

Jin, Soo‐Min;
Kang, Shin‐Young;
Kim, Hea‐Jee;
Lee, Ju‐Young;
Nam, In‐Ho;
Shim, Tae‐Hun;
Song, Yun‐Heub;
Park, Jea‐Gun

Publication type:

Article

narrowing window.

Published in:: Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 332, doi. 10.1049/el.2018.0672
Publication type:: Article

Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 350, doi. 10.1049/el.2017.3902

By:

An, J. S.;
Kim, K. J.;
Choi, C. M.;
Shindo, S.;
Sutou, Y.;
Song, Y. H.

Publication type:

Article

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications.

Published in:

NPJ Computational Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-024-01387-3

By:

Sun, Suyang;
Wang, Xiaozhe;
Jiang, Yihui;
Lei, Yibo;
Zhang, Siyu;
Kumar, Sanjay;
Zhang, Junying;
Ma, En;
Mazzarello, Riccardo;
Wang, Jiang-Jing;
Zhang, Wei

Publication type:

Article

Density measurement of solid and molten Sb2Te3 chalcogenide alloy by sessile drop method.

Published in:

High Temperatures - High Pressures, 2017, v. 46, n. 3, p. 219

By:

RUI LAN;
RIE ENDO;
MASASHI KUWAHARA;
YOSHINAO KOBAYASHI;
MASAHIRO SUSA

Publication type:

Article

A scheme for enabling the ultimate speed of threshold switching in phase change memory devices.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-85690-9

By:

Saxena, Nishant;
Raghunathan, Rajamani;
Manivannan, Anbarasu

Publication type:

Article

Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-73407-3

By:

Jang, Gabriel;
Park, Mihyun;
Hyeon, Da Seul;
Kim, WooJong;
Yang, JungYup;
Hong, JinPyo

Publication type:

Article

Quasicrystalline phase-change memory.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-70662-2

By:

Lee, Eun-Sung;
Yoo, Joung E.;
Yoon, Du S.;
Kim, Sung D.;
Kim, Yongjoo;
Hwang, Soobin;
Kim, Dasol;
Jeong, Hyeong-Chai;
Kim, Won T.;
Chang, Hye J.;
Suh, Hoyoung;
Ko, Dae-Hong;
Cho, Choonghee;
Choi, Yongjoon;
Kim, Do H.;
Cho, Mann-Ho

Publication type:

Article

State dependence and temporal evolution of resistance in projected phase change memory.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-64826-3

By:

Kersting, Benedikt;
Ovuka, Vladimir;
Jonnalagadda, Vara Prasad;
Sousa, Marilyne;
Bragaglia, Valeria;
Sarwat, Syed Ghazi;
Le Gallo, Manuel;
Salinga, Martin;
Sebastian, Abu

Publication type:

Article

Experimental Demonstration of Supervised Learning in Spiking Neural Networks with Phase-Change Memory Synapses.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-64878-5

By:

Nandakumar, S. R.;
Boybat, Irem;
Le Gallo, Manuel;
Eleftheriou, Evangelos;
Sebastian, Abu;
Rajendran, Bipin

Publication type:

Article

Novel Approaches for Neuromorphic Computing: Materials, Concepts and Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 18, p. 1, doi. 10.1002/pssa.202000549

By:

Wenger, Christian;
Spiga, Sabina;
Noheda, Beatriz;
Ziegler, Martin

Publication type:

Article

Investigation on the Scaling Performances of Carbon‐Doped Ge2Sb2Te5 Thin Films for Phase Change Random Access Memory in a 40 nm Process.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 22, p. N.PAG, doi. 10.1002/pssa.201900439

By:

Yan, Shuai;
Cai, Daolin;
Xue, Yuan;
Chen, Yifeng;
Liu, Yuanguang;
Wu, Lei;
Song, Zhitang

Publication type:

Article

Control of Microstructural Phase Distribution in Ge2Sb2Te5 Phase Change Memory Cells.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 16, p. N.PAG, doi. 10.1002/pssa.201900196

By:

Baik, Seung Jae;
Kim, Gwihyun;
Horii, Hideki;
Ahn, Dong‐ho

Publication type:

Article