Works matching DE "METAL insulator semiconductors"
Results: 304
High level illumination effect on MS'S solar cell characteristics with a new material Ga2Se3, as an intermediate layer.
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- Journal of Materials Science, 1998, v. 33, n. 8, p. 2179, doi. 10.1023/A:1004387607149
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- Article
Measurement of a solid-state triple point at the metal-insulator transition in VO<sub>2</sub>.
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- Nature, 2013, v. 500, n. 7463, p. 431, doi. 10.1038/nature12425
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- Article
Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 536, doi. 10.1134/S1063785016050308
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- Article
Increasing the efficiency of a silicon tunnel MIS injector of hot electrons by using high-K oxides.
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- Technical Physics Letters, 2015, v. 41, n. 9, p. 863, doi. 10.1134/S1063785015090102
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- Article
Modeling of the electrical characteristics of spherical metal-insulator-semiconductor tunnel structures.
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- Technical Physics Letters, 2011, v. 37, n. 11, p. 1003, doi. 10.1134/S1063785011110149
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- Article
Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation.
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- Technical Physics Letters, 2011, v. 37, n. 8, p. 693, doi. 10.1134/S106378501108013X
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- Article
Electrical Properties of Metal–Dysprosium Oxide–Gadolinium Oxide–Silicon Structures.
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- Technical Physics Letters, 2004, v. 30, n. 6, p. 494, doi. 10.1134/1.1773347
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The Effect of Electric Field on Metal–Insulator Phase Transition in Vanadium Dioxide.
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- Technical Physics Letters, 2002, v. 28, n. 5, p. 406, doi. 10.1134/1.1482750
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- Article
Instability Development during Motion of a Metal–Insulator Phase Boundary.
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- Technical Physics Letters, 2000, v. 26, n. 11, p. 1023, doi. 10.1134/1.1329703
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- Article
Resonant conversion of plasmons in a rippled metal–insulator structure.
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- Technical Physics Letters, 1998, v. 24, n. 9, p. 715, doi. 10.1134/1.1261957
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- Article
Energy barriers and trapping centers in silicon metal-insulator-semiconductor structures with samarium and ytterbium oxide insulators.
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- Technical Physics Letters, 1998, v. 24, n. 3, p. 217, doi. 10.1134/1.1262059
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- Article
Comprehensive Research on the Response of MIS Sensors of Pd‒SiO<sub>2</sub>‒Si and Pd‒Ta<sub>2</sub>O<sub>5</sub>‒SiO<sub>2</sub>‒Si Structures to Various Gases in Air.
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- Russian Journal of General Chemistry, 2018, v. 88, n. 12, p. 2732, doi. 10.1134/S1070363218120435
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- Article
The role of pd hybridization in the metal-insulator transition in NdNiO<sub>3</sub> heterostructure.
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- Materials Research Letters, 2018, v. 6, n. 9, p. 515, doi. 10.1080/21663831.2018.1486893
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- Article
Nanoplasmonic triple-wavelength demultiplexers in two-dimensional metallic waveguides.
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- Applied Physics B: Lasers & Optics, 2011, v. 103, n. 4, p. 877, doi. 10.1007/s00340-011-4525-0
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- Article
Plasmonic slow light waveguide and cavity.
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- Applied Physics B: Lasers & Optics, 2009, v. 95, n. 1, p. 97, doi. 10.1007/s00340-009-3397-z
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- Article
Investigations on the Possibilities of a MISiCFET Sensor System for OBD and Combustion Control Utilizing Different Catalytic Gate Materials.
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- Topics in Catalysis, 2004, v. 30/31, n. 1-4, p. 365, doi. 10.1023/B:TOCA.0000029776.18603.74
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- Article
Interplay Between Extra Charge Injection and Lattice Evolution in VO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Heterostructure.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 4, p. 1, doi. 10.1002/pssr.201700416
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- Article
The effects of insulator thickness and substrate doping density on the performance of ZnO/SiO<sub>2</sub>/n-Si solar cells.
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- Materials Technology, 2018, v. 33, n. 14, p. 865, doi. 10.1080/10667857.2018.1520956
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- Article
Metal-insulator transition in boron-doped amorphous carbon films.
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- Philosophical Magazine, 2007, v. 87, n. 6, p. 811, doi. 10.1080/14786430600993323
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- Article
Critical behaviour of the Pauli spin susceptibility of strongly correlated electrons in two dimensions.
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- Philosophical Magazine, 2006, v. 86, n. 17/18, p. 2761, doi. 10.1080/14786430500333315
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- Article
Recent results at the metal-insulator transition of icosahedral AlPdRe.
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- Philosophical Magazine, 2006, v. 86, n. 3-5, p. 655, doi. 10.1080/14786430500311758
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- Article
Structure, bonding, stability, electronic, thermodynamic and thermoelectric properties of six different phases of indium nitride.
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- Journal of Materials Science, 2018, v. 53, n. 11, p. 8302, doi. 10.1007/s10853-018-2176-9
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- Article
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-HgCdTe in the Strong Inversion Mode.
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- Russian Physics Journal, 2016, v. 59, n. 7, p. 920, doi. 10.1007/s11182-016-0855-z
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- Article
Near-Field Thermophotovoltaic Generation by Tuning Spectral Radiation Using a Structured Emitter and Metal-Semiconductor-Metal Cell.
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- Thermal Science & Engineering (0918-9963), 2022, v. 30, n. 2, p. 35
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- Article
Sinusoidal Bragg grating based on hybrid metal insulator metal plasmonic waveguide.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 11, p. 1633, doi. 10.1049/mnl.2018.5107
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- Article
High sensitivity vanadium-anadium pentoxide-luminium metal-nsulator-etal diode.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 5, p. 680, doi. 10.1049/mnl.2017.0728
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- Article
Investigation of the I-V characteristics asymmetry in semiconducting Y-Ba-Cu-O diodes.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 11, p. 838, doi. 10.1049/mnl.2017.0268
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- Article
Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 9, p. 503, doi. 10.1049/mnl.2016.0370
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- Article
Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re<sub>3</sub>Ge<sub>7</sub>.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00372-z
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- Article
From hidden metal-insulator transition to Planckian-like dissipation by tuning the oxygen content in a nickelate.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00374-x
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- Article
Possible ground states of rare-earth nickelates (RNiO 3 , R = La, Nd, Pr): a mean-field study.
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- Phase Transitions, 2014, v. 87, n. 4, p. 398, doi. 10.1080/01411594.2013.853767
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- Article
Improvement of resistive switching fluctuations by using one step lift-off process.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 10, p. 594, doi. 10.1002/pssr.201510286
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- Article
Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration.
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- EPJ Photovoltaics, 2022, v. 13, p. 1, doi. 10.1051/epjpv/2022016
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- Article
Stable reverse bias or integrated bypass diode in HIP‑MWT+ solar cells.
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- EPJ Photovoltaics, 2022, v. 13, p. 1, doi. 10.1051/epjpv/2021016
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- Article
Spin-Orbit Coupling Effects in the dc Josephson Current in the s Wave Superconductor/Insulator/d Wave Superconductor Junction.
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- Journal of Low Temperature Physics, 2014, v. 174, n. 1/2, p. 104, doi. 10.1007/s10909-013-0953-z
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- Article
Andreev Reflections in Micrometer-Scale Normal Metal-Insulator-Superconductor Tunnel Junctions.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 392, doi. 10.1007/s10909-011-0425-2
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- Article
Conductivity and Permittivity of Hydrogen Under Isentropic Magnetic Compression up to 3 Mbar.
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- Journal of Low Temperature Physics, 2010, v. 159, n. 1/2, p. 307, doi. 10.1007/s10909-009-0124-4
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- Article
Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRuFe O Thin Films.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1950-y
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- Article
Revival of Metal-Insulator and Ferromagnetic-Paramagnetic Transitions by Ni Substitution at Mn Site in Charge-Ordered Monovalent Doped Nd<sub>0.75</sub>Na<sub>0.25</sub>MnO<sub>3</sub> Manganites.
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- Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 9, p. 2851, doi. 10.1007/s10948-017-4521-7
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- Article
Study of Electrical Transport and Magnetic Properties of Nd<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/Nd<sub>0.8</sub>Na<sub>0.2</sub>MnO<sub>3</sub> Bilayer Thin Films.
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- Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 4, p. 1149, doi. 10.1007/s10948-017-4275-2
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- Article
Magnetoresistance Effect in LaSrNiO-Doped LaCaMnO Nanocomposites.
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- Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 3, p. 789, doi. 10.1007/s10948-016-3665-1
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- Article
Composites AgPbO/M (M=CuO, CuO) and Exciton Models of Superconductivity.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1897, doi. 10.1007/s10948-012-1987-1
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- Article
Metal-Insulator Transition in Optical Lattice System with Site-Dependent Interactions.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1771, doi. 10.1007/s10948-012-2064-5
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- Article
Structural Characterization and Magneto Electrical Behavior of Sm Doped LaCaMnO Manganites.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1461, doi. 10.1007/s10948-012-2065-4
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- Article
The Electro-magnetic Properties of LaCaSrMnO/ZnO Composites via Liquid Phase Method.
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- Journal of Superconductivity & Novel Magnetism, 2012, v. 25, n. 7, p. 2523, doi. 10.1007/s10948-012-1680-4
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A local metallic state in globally insulating La<sub>1.24</sub>Sr<sub>1.76</sub>Mn<sub>2</sub>O<sub>7</sub> well above the metal–insulator transition.
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- 2007
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- Letter
Metal Oxide Nanoparticles as Novel Gate Materials for Field-Effect Gas Sensors.
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- Materials & Manufacturing Processes, 2006, v. 21, n. 3, p. 275, doi. 10.1080/10426910500464651
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- Article
Analysis of miniaturized 3 dB branch-line hybrid couplers using distributed MIM capacitors.
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- Microwave & Optical Technology Letters, 2010, v. 52, n. 7, p. 1553, doi. 10.1002/mop.25273
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- Article
High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications.
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- Microwave & Optical Technology Letters, 2010, v. 52, n. 3, p. 618, doi. 10.1002/mop.25018
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- Article
Optimizing the Crystallinity of a ZrO<sub>2</sub> Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors.
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- Advanced Materials Interfaces, 2024, v. 11, n. 11, p. 1, doi. 10.1002/admi.202300883
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- Article