Effect of LaNiO₃ buffer layers on the structure and electrical properties of sol–gel-derived Pb(Mg_1/3Nb_2/3)O₃PbTiO₃ thin films.

Lin, T.; Meng, X. J.; Sun, J. L.; Ma, J. H.; Chu, J. H.

Pb(Mg1/3Nb2/3)O3PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffer layer have been prepared using a sol–gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films.

THIN films; SOLID state electronics; SOLID state physics; PHYSICS; PLATINUM electrodes; ELECTRODES

Applied Physics A: Materials Science & Processing, 2005, Vol 81, Issue 5, p1025

0947-8396

Academic Journal

10.1007/s00339-004-2905-6