Works matching AU Rebohle, L.

Results: 18

Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.
Published in:
Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 439, doi. 10.1007/s00340-009-3729-z
By:
- Rebohle, L.;
- Lehmann, J.;
- Prucnal, S.;
- Sun, J. M.;
- Helm, M.;
- Skorupa, W.
Publication type:
Article
Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion.
Published in:
Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 451, doi. 10.1007/s00340-009-3751-1
By:
- Prucnal, S.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.
Published in:
Applied Physics B: Lasers & Optics, 2009, v. 94, n. 2, p. 289, doi. 10.1007/s00340-008-3338-2
By:
- Prucnal, S.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.
Published in:
Applied Physics B: Lasers & Optics, 2008, v. 91, n. 1, p. 123, doi. 10.1007/s00340-008-2948-z
By:
- Prucnal, S.;
- Rebohle, L.;
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Tjagulskii, I. P.;
- Skorupa, W.
Publication type:
Article
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
Published in:
Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Sun, J. M.;
- Yankov, R. A.;
- Skorupa, W.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Prucnal, S.;
- Gebel, T.;
- Rebohle, L.
Publication type:
Article
Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.
Published in:
Applied Physics B: Lasers & Optics, 2002, v. 74, n. 1, p. 53, doi. 10.1007/s003400100771
By:
- Rebohle, L.;
- Gebel, T.;
- von Borany, J.;
- Skorupa, W.;
- Helm, M.;
- Pacifici, D.;
- Franzò, G.;
- Priolo, F.
Publication type:
Article
Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.
Published in:
Applied Physics B: Lasers & Optics, 2000, v. 71, n. 2, p. 131, doi. 10.1007/PL00006966
By:
- Rebohle, L.;
- von Borany, J.;
- Fröb, H.;
- Skorupa, W.
Publication type:
Article
Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure.
Published in:
Physica Status Solidi (B), 1999, v. 211, n. 1, p. 233, doi. 10.1002/(SICI)1521-3951(199901)211:1<233::AID-PSSB233>3.0.CO;2-B
By:
- Misiuk, A.;
- Surma, B.;
- Rebohle, L.;
- Jun, J.;
- Antonova, I. V.;
- Tyschenko, I.;
- Romano-Rodriguez, A.;
- Lopez, M.
Publication type:
Article
Group-IV nanocluster formation by ion-beam synthesis.
Published in:
Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 7, p. 1049, doi. 10.1007/s00339-002-1947-x
By:
- Skorupa, W.;
- Rebohle, L.;
- Gebel, T.
Publication type:
Article
Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.
Published in:
Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 823, doi. 10.1007/s00339-002-1963-x
By:
- Kaschieva, S.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
By:
- Tiagulskyi, S. I.;
- Nazarov, A. N.;
- Gordienko, S. O.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Nazarova, T. M.;
- Gomeniuk, Yu. V.;
- Rudko, G. V.;
- Lysenko, V. S.;
- Rebohle, L.;
- Voelskow, M.;
- Skorupa, W.;
- Koshka, Y.
Publication type:
Article
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Tiagulskyi, S. I.;
- Lysenko, V. S.;
- Tyagulskyy, I. P.;
- Torbin, V. N.;
- Omelchuk, V. V.;
- Nazarova, T. M.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
By:
- Nazarov, A. N.;
- Skorupa, W.;
- Vovk, Ja. N.;
- Osiyuk, I. N.;
- Tkachenko, A. S.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Gebel, T.;
- Rebohle, L.;
- Yankov, R. A.;
- Nazarova, T. M.
Publication type:
Article
Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure.
Published in:
Semiconductors, 2004, v. 38, n. 7, p. 818, doi. 10.1134/1.1777607
By:
- Tyschenko, I.E.;
- Rebohle, L.
Publication type:
Article
Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.
Published in:
Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916
By:
- Tyschenko, I. E.;
- Zhuravlev, K. S.;
- Vandyshev, E. N.;
- Misiuk, A.;
- Yankov, R. A.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944
By:
- Kachurin, G. A.;
- Rebohle, L.;
- Tyschenko, I. E.;
- Volodin, V. A.;
- Voelskow, M.;
- Skorupa, W.;
- Froeb, H.
Publication type:
Article
Photoluminescence of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions.
Published in:
Semiconductors, 1999, v. 33, n. 5, p. 523, doi. 10.1134/1.1187721
By:
- Tyschenko, I. E.;
- Volodin, V. A.;
- Rebohle, L.;
- Voelskov, M.;
- Skorupa, V.
Publication type:
Article
Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions
Published in:
Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417
By:
- Kachurin, G. A.;
- Rebohle, L.;
- Skorupa, W.;
- Yankov, R. A.;
- Tyschenko, I. E.;
- Froeb, H.;
- Boehme, T.;
- Leo, K.
Publication type:
Article

Works matching AU Rebohle, L.

Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.

Blue electroluminescence of ytterbium clusters in SiO<sub>2</sub> by co-operative up-conversion.

Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure.

Group-IV nanocluster formation by ion-beam synthesis.

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Radiative Recombination in Ge<sup>+</sup>-Implanted SiO<sub>2</sub> Films Annealed under Hydrostatic Pressure.

Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.

Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.

Photoluminescence of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions.

Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions