Works matching DE "FERROELECTRIC devices"
Results: 762
Enhanced Fill Factor and Power Conversion Efficiency of Single Oxide Ferroelectric Photovoltaic Devices with Designed Nanostructures.
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- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202213178
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- Article
In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO<sub>3</sub> Interfaces.
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- Advanced Functional Materials, 2022, v. 32, n. 49, p. 1, doi. 10.1002/adfm.202207418
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Flexible Ferroelectric Devices: Status and Applications.
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- Advanced Functional Materials, 2022, v. 32, n. 45, p. 1, doi. 10.1002/adfm.202205933
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Design of Self‐Powered Sensors with Excellent Thermal and UV–Light Detections by 0.94(Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>‐0.06Ba(Zr<sub>0.25</sub>Ti<sub>0.75</sub>)O<sub>3</sub> Nanoparticles.
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- Advanced Functional Materials, 2022, v. 32, n. 40, p. 1, doi. 10.1002/adfm.202204234
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Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure.
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- Advanced Functional Materials, 2022, v. 32, n. 19, p. 1, doi. 10.1002/adfm.202200389
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Ferroelectric Photovoltaic Materials and Devices.
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- Advanced Functional Materials, 2022, v. 32, n. 14, p. 1, doi. 10.1002/adfm.202109625
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Multifunctional Optoelectronic Synapse Based on Ferroelectric Van der Waals Heterostructure for Emulating the Entire Human Visual System.
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- Advanced Functional Materials, 2022, v. 32, n. 6, p. 1, doi. 10.1002/adfm.202108014
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Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage.
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- Advanced Functional Materials, 2021, v. 31, n. 19, p. 1, doi. 10.1002/adfm.202011029
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- Article
Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor.
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- Advanced Functional Materials, 2021, v. 31, n. 9, p. 1, doi. 10.1002/adfm.202009999
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- Article
Optoelectronic Ferroelectric Domain‐Wall Memories Made from a Single Van Der Waals Ferroelectric.
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- Advanced Functional Materials, 2020, v. 30, n. 52, p. 1, doi. 10.1002/adfm.202004206
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- Article
Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba<sub>x</sub>Sr<sub>1‐x</sub>TiO<sub>3</sub> and MoS<sub>2</sub> Channel.
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- Advanced Functional Materials, 2020, v. 30, n. 7, p. N.PAG, doi. 10.1002/adfm.201908210
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- Article
Direct Observation of Core–Shell Structures in Individual Lead Titanate Ferroelectric Nanostructures by Tip‐Enhanced Refractive Index Mapping.
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- Advanced Functional Materials, 2019, v. 29, n. 2, p. N.PAG, doi. 10.1002/adfm.201806770
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- Article
Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis.
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- Advanced Functional Materials, 2018, v. 28, n. 10, p. 1, doi. 10.1002/adfm.201705250
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- Article
Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature.
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- Advanced Functional Materials, 2018, v. 28, n. 8, p. 1, doi. 10.1002/adfm.201704165
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〈012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition.
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- Journal of Materials Science, 1998, v. 33, n. 23, p. 5631, doi. 10.1023/A:1004424517453
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- Article
Computational characterization of magneto-electric composites: the role of ferroelectric pre-polarization.
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- PAMM: Proceedings in Applied Mathematics & Mechanics, 2015, v. 15, n. 1, p. 457, doi. 10.1002/pamm.201510219
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- Article
Quality improvement by using grey prediction tool compensation model for uncoated and TiAlCN-coated tungsten carbide tools in depanel process of memory modules.
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- International Journal of Advanced Manufacturing Technology, 2009, v. 40, n. 9/10, p. 857, doi. 10.1007/s00170-008-1410-z
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- Article
Stochastic optimization of ferroelectric ceramics for piezoelectric applications.
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- Structural & Multidisciplinary Optimization, 2011, v. 44, n. 2, p. 199, doi. 10.1007/s00158-011-0626-y
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Erratum to Two Articles in Wireless Personal Communications.
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- 2017
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- Erratum
An hour-glass magnetic spectrum in an insulating, hole-doped antiferromagnet.
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- Nature, 2011, v. 471, n. 7338, p. 341, doi. 10.1038/nature09902
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- Article
Dielectric Properties of (C60 + C70)—Ferroelectric Liquid Crystal Composite.
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- Fullerenes, Nanotubes & Carbon Nanostructures, 2004, v. 12, n. 3, p. 681, doi. 10.1081/FST-200026956
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Combined Electrostatic and Strain Engineering of BiFeO<sub>3</sub> Thin Films at the Morphotropic Phase Boundary.
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- Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400185
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- Article
Optimizing the Ferroelectric Performance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Epitaxial Film by La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> Capping Layer.
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- Advanced Electronic Materials, 2024, v. 10, n. 10, p. 1, doi. 10.1002/aelm.202400136
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- Article
Inch‐Scale Freestanding Single‐Crystalline BiFeO<sub>3</sub> Membranes for Multifunctional Flexible Electronics.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300670
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- Article
Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Graphene FETs.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300511
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- Article
Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Ferroelectric Capacitors.
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- Advanced Electronic Materials, 2023, v. 9, n. 10, p. 1, doi. 10.1002/aelm.202300171
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- Article
Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO<sub>2</sub> Regulating Layer.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300208
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- Article
Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO<sub>2</sub>/ZrO<sub>2</sub> Superlattice Structure.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200737
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- Article
Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200951
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- Article
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
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- Article
A Ferroelectric p–i–n Heterostructure for Highly Enhanced Short‐Circuit Current Density and Self‐Powered Photodetection.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101385
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- Article
Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period.
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- Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100662
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- Article
Enhancement of Interfacial Polarization in BaTiO<sub>3</sub> Thin Films via Oxygen Inhomogeneity.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100876
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- Article
Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100612
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- Article
Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100023
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- Article
Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001085
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- Article
Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS<sub>2</sub>‐Pb(Zr,Ti)O<sub>3</sub> Memories with Improved On–Off Ratios.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001223
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- Article
Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000906
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- Article
Tunable Microwave Device Fabrication on Low‐Temperature Crystallized Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> Thin Films by an Alternating Deposition and Laser Annealing Process.
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- Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000905
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- Article
Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors.
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- Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000778
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- Article
Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O<sub>3</sub> Thin Films.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000300
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Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Tunnel Junctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900852
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- Article
Photovoltaic–Pyroelectric–Piezoelectric Coupled Effect Induced Electricity for Self‐Powered Coupled Sensing.
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- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201900195
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- Article
Surface acoustic waves in thin films of barium strontium titanate on magnesium oxide substrates.
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- Technical Physics Letters, 2011, v. 37, n. 3, p. 207, doi. 10.1134/S1063785011030084
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- Article
Wide-aperture plasma jet source based on low-voltage spark discharge with ferroelectric electrode.
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- Technical Physics Letters, 2010, v. 36, n. 5, p. 447, doi. 10.1134/S1063785010050172
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- Article
Effect of UV radiation on the relaxation characteristics of ferroelectric thin-film capacitors.
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- Technical Physics Letters, 2008, v. 34, n. 7, p. 561, doi. 10.1134/S1063785008070079
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- Article
Paraelectric in a strong high-frequency field.
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- Technical Physics Letters, 2008, v. 34, n. 5, p. 446, doi. 10.1134/S106378500805026X
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- Article
Analysis of losses in a rectangular multilayer dielectric-filled tunable accelerating structure.
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- Technical Physics Letters, 2007, v. 33, n. 4, p. 344, doi. 10.1134/S1063785007040219
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- Article
Nanocrystalline PbIn<sub>0.5</sub>Nb<sub>0.5</sub>O<sub>3</sub> ceramics and its properties.
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- Technical Physics Letters, 2007, v. 33, n. 2, p. 160, doi. 10.1134/S1063785007020204
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- Article
Plasma Opening Switch with a Ferroelectric Plasma Injector.
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- Technical Physics Letters, 2005, v. 31, n. 2, p. 147, doi. 10.1134/1.1877630
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- Article