Works matching DE "COMPLEMENTARY metal oxide semiconductors"

Results: 4531

Ka-band stacked and pseudo-differential orthogonal load-modulated balanced power amplifier in 22 nm CMOS FDSOI.

Published in:

International Journal of Legal Information, 2024, v. 52, n. 1, p. 763, doi. 10.1017/S1759078723001137

By:

Rusanen, Jere;
Sethi, Alok;
Tervo, Nuutti;
Kiuru, Veeti;
Rahkonen, Timo;
Pärssinen, Aarno;
Aikio, Janne P.

Publication type:

Article

Developments at IMEC.

Published in:: Solid State Technology, 2001, v. 44, n. 10, p. 32
Publication type:: Article

Epitaxial wafer market.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 60

By:

Royalty, Robert

Publication type:

Article

Is IBM 130nm-process leader?

Published in:: Solid State Technology, 2001, v. 44, n. 2, p. 42
Publication type:: Article

Ultrashallow junctions or ultrathin SOI?

Published in:

Solid State Technology, 2000, v. 43, n. 9, p. 66

By:

Current, M.I.;
Bedell, S.W.;
Malik, I.J.;
Feng, L.M.;
Henley, F.J.

Publication type:

Article

Chromeless phase-shift masks used for sub-100nm SOI CMOS transistors.

Published in:

Solid State Technology, 2000, v. 43, n. 7, p. 116

By:

Fritze, Michael;
Astolfi, David K.;
Yost, Donna-Ruth W.;
Wyatt, Peter W.;
Liu, Hua-Yu

Publication type:

Article

Motorola's SiGe:C process targets wireless.

Published in:

Solid State Technology, 2000, v. 43, n. 6, p. 40

By:

Burggraaf, Pieter

Publication type:

Article

semiconductor manufacturing techniques for ferroelectric liquid crystal microdisplays.

Published in:

Solid State Technology, 2000, v. 43, n. 5, p. 151

By:

Handschy, Mark

Publication type:

Article

Tech Briefs.

Published in:: Solid State Technology, 2000, v. 43, n. 4, p. 26
Publication type:: Article

Roadmap-caliber BiCMOS from TI.

Published in:

Solid State Technology, 2000, v. 43, n. 4, p. 24

By:

Lunday, Christine

Publication type:

Article

CMOS: How far can it go?

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. S14

By:

Deleonibus, Simon;
Caillat, Christian;
Gautier, Jacques;
Guegan, Georges;
Heitzmann, Michel;
Martin, Francois;
Tedesco, Serge

Publication type:

Article

IEDM 1999 focused on CMOS solutions.

Published in:

Solid State Technology, 2000, v. 43, n. 2, p. 30

By:

Burggraaf, Pieter "Pete"

Publication type:

Article

IMEC developments.

Published in:: Solid State Technology, 1999, v. 42, n. 10, p. 36
Publication type:: Article

Salicides and alternative technologies for future ICs: Part 2.

Published in:

Solid State Technology, 1999, v. 42, n. 8, p. 55

By:

Kitti, Jorge A.;
Shiau, Wei-Tsun

Publication type:

Article

Salicides and alternative technologies for future ICs: Part 1.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 81

By:

Kittl, Jorge A.;
Shiau, Wei-Tsun;
Miles, Donald;
Violette, Katherine E.;
Hu, Jerry C.;
Hong, Qi-Zhong

Publication type:

Article

Tech briefs.

Published in:: Solid State Technology, 1999, v. 42, n. 2, p. 18
Publication type:: Article

1999 looks like a very busy year.

Published in:

Solid State Technology, 1998, v. 41, n. 11, p. 12

By:

Haavind, Robert

Publication type:

Article

Philips invests in dicrete technologies.

Published in:: Solid State Technology, 1998, v. 41, n. 10, p. 48
Publication type:: Article

CMOS `down in the mouth.'

Published in:

Solid State Technology, 1998, v. 41, n. 7, p. 60

By:

Burggraaf, Pieter

Publication type:

Article

Jet vapor deposition reduces gate leakage.

Published in:

Solid State Technology, 1998, v. 41, n. 4, p. 36

By:

L.S.

Publication type:

Article

Single-wafer processing of in situ-doped polycrystalline Si and Si1-xGex.

Published in:

Solid State Technology, 1998, v. 41, n. 3, p. S5

By:

Bensahel, D.;
Campidelli, Y.;
Hernandez, C.;
Martin, F.;
Sagnes, I.;
Meyer, D.J.

Publication type:

Article

The RACE to find what's next.

Published in:

Electronics Systems & Software, 2005, v. 3, n. 6, p. 42, doi. 10.1049/ess:20050607

By:

Collins, Luke

Publication type:

Article

NEC and Toshiba pool resources on 45nm.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 5
Publication type:: Article

Car designs push voltages up in advanced processes.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 4
Publication type:: Article

Freescale joins Euro chip technology programme.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 4, p. 3
Publication type:: Article

Water cooling goes down the die.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 3, p. 10
Publication type:: Article

Process shrinks set to level out.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 3, p. 4
Publication type:: Article

Design of implicit pulsed-dual edge triggering flip flop for low power and high speed clocking systems.

Published in:

International Journal of Wavelets, Multiresolution & Information Processing, 2020, v. 18, n. 1, p. N.PAG, doi. 10.1142/S0219691319410091

By:

Nagarajan, P.;
Kumar, N. Ashok;
Ramana, P. Venkat

Publication type:

Article

Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 38, p. n/a, doi. 10.1002/adfm.201702211

By:

Xu, Yijun;
Yuan, Jian;
Zhang, Kai;
Hou, Yuan;
Sun, Qiu;
Yao, Yingming;
Li, Shaojuan;
Bao, Qiaoliang;
Zhang, Han;
Zhang, Yuegang

Publication type:

Article

Concurrent Synthesis of High-Performance Monolayer Transition Metal Disulfides.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 15, p. n/a, doi. 10.1002/adfm.201605896

By:

Sun, Linfeng;
Leong, Wei Sun;
Yang, Shize;
Chisholm, Matthew F.;
Liang, Shi‐Jun;
Ang, Lay Kee;
Tang, Yongjian;
Mao, Yunwei;
Kong, Jing;
Yang, Hui Ying

Publication type:

Article

Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 40, p. 7359, doi. 10.1002/adfm.201602195

By:

Nasiri, Noushin;
Bo, Renheng;
Hung, Tak Fu;
Roy, Vellaisamy A. L.;
Fu, Lan;
Tricoli, Antonio

Publication type:

Article

Multistability in Bistable Ferroelectric Materials toward Adaptive Applications.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 31, p. 5748, doi. 10.1002/adfm.201601353

By:

Ghosh, Anirban;
Koster, Gertjan;
Rijnders, Guus

Publication type:

Article

Carrier Type Control of WSe<sub>2</sub> Field-Effect Transistors by Thickness Modulation and MoO<sub>3</sub> Layer Doping.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 23, p. 4223, doi. 10.1002/adfm.201600292

By:

Zhou, Changjian;
Zhao, Yuda;
Raju, Salahuddin;
Wang, Yi;
Lin, Ziyuan;
Chan, Mansun;
Chai, Yang

Publication type:

Article

Water-Induced Scandium Oxide Dielectric for Low-Operating Voltage n- and p-Type Metal-Oxide Thin-Film Transistors.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 46, p. 7180, doi. 10.1002/adfm.201502612

By:

Liu, Ao;
Liu, Guoxia;
Zhu, Huihui;
Song, Huijun;
Shin, Byoungchul;
Fortunato, Elvira;
Martins, Rodrigo;
Shan, Fukai

Publication type:

Article

Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 27, p. 4290, doi. 10.1002/adfm.201501427

By:

Du, Chao;
Ma, Wen;
Chang, Ting;
Sheridan, Patrick;
Lu, Wei D.

Publication type:

Article

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 12, p. 1805, doi. 10.1002/adfm.201404031

By:

Zheng, Xiaohu;
Zhang, Miao;
Shi, Xiaohua;
Wang, Gang;
Zheng, Li;
Yu, Yuehui;
Huang, Anping;
Chu, Paul K.;
Gao, Heng;
Ren, Wei;
Di, Zengfeng;
Wang, Xi

Publication type:

Article

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 1, p. 158, doi. 10.1002/adfm.201402955

By:

Luo, Zhaochu;
Zhang, Xiaozhong;
Xiong, Chengyue;
Chen, Jiaojiao

Publication type:

Article

Molecular Packing-Induced Transition between Ambipolar and Unipolar Behavior in Dithiophene-4,9-dione-Containing Organic Semiconductors.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 19, p. 2907, doi. 10.1002/adfm.201302855

By:

Xu, Huan;
Zhou, Ye‐Cheng;
Zhou, Xing‐Yu;
Liu, Ke;
Cao, Lu‐Ya;
Ai, Yong;
Fan, Zhi‐Ping;
Zhang, Hao‐Li

Publication type:

Article

Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 14, p. 2057, doi. 10.1002/adfm.201303378

By:

Cheng, Shiau‐Shin;
Huang, Peng‐Yi;
Ramesh, Mohan;
Chang, Hsiu‐Chieh;
Chen, Li‐Ming;
Yeh, Chia‐Ming;
Fung, Chun‐Lin;
Wu, Meng‐Chyi;
Liu, Chung‐Chi;
Kim, Choongik;
Lin, Hong‐Cheu;
Chen, Ming‐Chou;
Chu, Chih‐Wei

Publication type:

Article

Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 27, p. 22017, doi. 10.1007/s10854-022-08993-1

By:

Li, Lianqiu;
Wang, Fang;
Li, Kaixuan;
Han, Yemei;
Hu, Kai;
Sun, Zheng;
Xie, Yangyang;
Kong, Deqing;
Song, Dianyou;
Qian, Lirong;
Zhang, Kailiang

Publication type:

Article

Study of the quasi-single crystalline lead sulfide film deposited by magnetron sputtering and its infrared detecting characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 16029, doi. 10.1007/s10854-022-08494-1

By:

Xiao, Yonghong;
Xu, Tingwei;
Zhang, Maofa;
Zhou, Yufei;
Chen, Duo;
Bao, Xiaoqing;
Zeng, Xiangbin

Publication type:

Article

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17427, doi. 10.1007/s10854-021-06274-x

By:

Zhang, Lu;
Zhang, Yadong;
Sun, Xiaoting;
Jia, Kunpeng;
Zhang, Qingzhu;
Wu, Zhenhua;
Yin, Huaxiang

Publication type:

Article

The effect of thickness on texture of Ge2Sb2Te5 phase-change films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5848, doi. 10.1007/s10854-019-02645-7

By:

Tang, Qiongyan;
He, Tianze;
Yu, Kun;
Cheng, Yan;
Qi, Ruijuan;
Huang, Rong;
Zhao, Jin;
Song, Wenxiong;
Song, Zhitang

Publication type:

Article

Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 1986, doi. 10.1007/s10854-019-02718-7

By:

Gupta, Prachi;
Soni, Mahesh;
Sharma, Satinder K.

Publication type:

Article

Special issue on selected papers from EMRS: Carrier transport, photonics and sensing.

Published in:

2020

By:

Ruzin, Arie

Publication type:

Editorial

Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4339, doi. 10.1007/s10854-019-00747-w

By:

Seixas, Luís Eduardo;
Gonçalez, Odair Lellis;
Vaz, Rafael Galhardo;
da Costa Telles, Antonio Carlos;
Finco, Saulo;
Gimenez, Salvador Pinillos

Publication type:

Article

A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 7834, doi. 10.1007/s10854-017-6480-y

By:

Hafsi, B.;
Boubaker, A.;
Kalboussi, A.;
Lmimouni, K.

Publication type:

Article

Analysis of electrostatic doped Schottky barrier carbon nanotube FET for low power applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1762, doi. 10.1007/s10854-016-5723-7

By:

Singh, Amandeep;
Khosla, Mamta;
Raj, Balwinder

Publication type:

Article

Electrical properties of pulsed laser deposited BiZnNbO thin films for high K gate dielectric application.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 6, p. 626, doi. 10.1007/s10854-010-0187-7

By:

Sudheendran, K.;
James Raju, K. C.

Publication type:

Article

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 179, doi. 10.1007/s10854-007-9299-0

By:

Iamraksa, P.;
Lloyd, N. S.;
Bagnall, D. M.

Publication type:

Article