Works matching DE "SEMICONDUCTOR diffusion"

Results: 30

Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δ Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 47, p. 7448, doi. 10.1002/adfm.201402286

By:

Messerschmitt, Felix;
Kubicek, Markus;
Schweiger, Sebastian;
Rupp, Jennifer L.M.

Publication type:

Article

Interfacial reactions and diffusion path in gold-tin-nickel system during eutectic or thermo-compression bonding for 200 mm MEMS wafer level hermetic packaging.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3427, doi. 10.1007/s10854-015-2852-3

By:

Garnier, Arnaud;
Baillin, Xavier;
Hodaj, Fiqiri

Publication type:

Article

Palladium diffusion in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3787, doi. 10.1007/s10854-015-2903-9

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Effect of dopants on the epitaxial growth and oxygen diffusion behaviors of CeO buffer layer for coated conductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3874, doi. 10.1007/s10854-015-2914-6

By:

Wang, H.;
Cao, L.;
Wang, Y.;
Jin, L.;
Liu, J.;
Huang, J.;
Li, C.

Publication type:

Article

Activation kinetics of the As acceptor in HgCdTe.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 67, doi. 10.1007/s10854-007-9269-6

By:

Shaw, D.;
Capper, P.

Publication type:

Article

Photocurrent diffusion length in disordered GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 107, doi. 10.1007/s10854-007-9160-5

By:

Koo, A.;
Budde, F.;
Ruck, B. J.;
Trodahl, H. J.;
Bittar, A.;
Preston, A. R. H.

Publication type:

Article

Photoacoustic investigation of the effective diffusivity of two-layer semiconductors.

Published in:

Molecular Physics, 2002, v. 100, n. 19, p. 3133, doi. 10.1080/00268970210139877

By:

Medina, J.;
Gurevich, G.;
Logvinov, G. N.;
Rodriguez, P.;
Gonzalez De La Cruz, G.

Publication type:

Article

Laser-assisted selective emitters and the role of laser doping.

Published in:

Photovoltaics International, 2009, n. 5, p. 84

By:

Colville, Finlay

Publication type:

Article

Heterogeneous Combustion of a Pair of Interacting Particles with an Arbitrarily Shaped Surface.

Published in:

Technical Physics, 2002, v. 47, n. 11, p. 1345, doi. 10.1134/1.1522100

By:

Shchukin, E. R.;
Yalamov, G. Yu.

Publication type:

Article

Nanoscale volume diffusion.

Published in:

Journal of Materials Science, 2011, v. 46, n. 20, p. 6465, doi. 10.1007/s10853-011-5720-4

By:

Erdélyi, Zoltán;
Beke, Dezső L.

Publication type:

Article

Electron microscopy study of ion beam synthesized β-FeSi2.

Published in:

Journal of Materials Science, 2007, v. 42, n. 1, p. 207, doi. 10.1007/s10853-006-1053-0

By:

Marinova, M.;
Sutter, E.;
Baleva, M.

Publication type:

Article

THE STUDY OF THE BIOMORPHIC SILICON CARBIDE STRUCTURE BY RAMAN SPECTROSCOPY.

Published in:: Naukovi visti NTUU - KPI, 2010, v. 2010, n. 4, p. 151
Publication type:: Article

CHUA'S CIRCUITS SYNCHRONIZATION WITH DIFFUSIVE COUPLING:: NEW RESULTS.

Published in:

International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2009, v. 19, n. 9, p. 3103, doi. 10.1142/S0218127409024670

By:

BUSCARINO, ARTURO;
FORTUNA, LUIGI;
FRASCA, MATTIA;
SCIUTO, GREGORIO

Publication type:

Article

Mathematical aspects of semiconductor modeling.

Published in:

Nonlinear Studies, 1999, v. 6, n. 2, p. 231

By:

Richardson Jr.

Publication type:

Article

Large disparity between gallium and antimony self-diffusion in gallium antimonide.

Published in:

Nature, 2000, v. 408, n. 6808, p. 69, doi. 10.1038/35040526

By:

Bracht, H.;
Nicols, S.P.;
Walukiewicz, W.;
Silveira, J.P.;
Briones, F.;
Haller, E.E.

Publication type:

Article

Global Existence and Extinction of Weak Solutions to a Class of Semiconductor Equations with Fast Diffusion Terms.

Published in:

Journal of Inequalities & Applications, 2008, v. 2008, p. 1, doi. 10.1155/2008/961045

By:

Bin Wu

Publication type:

Article

Tracking and reconstruction methods for moving-interfaces.

Published in:

Applied Mathematics & Mechanics, 2004, v. 25, n. 3, p. 307, doi. 10.1007/BF02437334

By:

Ru-xun, Liu;
Xiao-ping, Liu;
Lei, Zhang;
Zhi-feng, Wang

Publication type:

Article

Applications of Fast Scanning Tunneling Microscopy: A Review.

Published in:

Materials & Manufacturing Processes, 2007, v. 22, n. 1, p. 22, doi. 10.1080/10426910601015824

By:

Wu, Qi-Hui;
Kang, Junyong

Publication type:

Article

Impurity diffusion through strained semiconductors.

Published in:

Quarterly Journal of Mechanics & Applied Mathematics, 2005, v. 58, n. 4, p. 615, doi. 10.1093/qjmam/hbi025

By:

ALLEN, E. D.;
KING, J. R.;
MEERE, M. G.

Publication type:

Article

An analysis of a kick-out diffusion mechanism with charge effects.

Published in:

Quarterly Journal of Mechanics & Applied Mathematics, 1998, v. 51, n. 4, p. 515, doi. 10.1093/qjmam/51.4.515

By:

Meere, MG

Publication type:

Article

Superionic conductivity in TlGaTe crystals.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 975, doi. 10.1134/S1063782611080161

By:

Sardarli, R.;
Samedov, O.;
Abdullayev, A.;
Huseynov, E.;
Qocayev, E.;
Salmanov, F.

Publication type:

Article

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 593, doi. 10.1134/S1063782611050174

By:

Konin, A.

Publication type:

Article

Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 448, doi. 10.1134/S106378261004007X

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270

By:

Bobrovnikova, I. A.;
Ivonin, I. V.;
Novikov, V. A.;
Preobrazhenskii, V. V.

Publication type:

Article

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 675, doi. 10.1134/S1063782608060080

By:

Gurin, N. T.;
Sabitov, O. Yu.

Publication type:

Article

A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.

Published in:

Semiconductors, 2001, v. 35, n. 11, p. 1231, doi. 10.1134/1.1418063

By:

Aleksandrov, O. V.

Publication type:

Article

Measurement of the diffusion length of minority charge carriers using real Schottky barriers.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 661, doi. 10.1134/1.1187060

By:

Dmitruk, N. L.;
Borkovskaya, O. Yu.;
Mamykin, S. V.

Publication type:

Article

Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF3 Annealing.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 538, doi. 10.1007/s11664-009-0681-y

By:

Orita, Kenji;
Kawaguchi, Masao;
Kawaguchi, Yasutoshi;
Takigawa, Shinichi;
Ueda, Daisuke

Publication type:

Article

Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa.

Published in:

Optical & Quantum Electronics, 2011, v. 42, n. 11-13, p. 747, doi. 10.1007/s11082-011-9471-x

By:

Satter, Md.;
Yoder, Paul

Publication type:

Article

MONTE CARLO SIMULATION OF THE KINETICS IN THE GROWTH OF SEMICONDUCTOR QUANTUM DOTS.

Published in:

Modern Physics Letters B, 2011, v. 25, n. 7, p. 465, doi. 10.1142/S0217984911025869

By:

ZHAO, CHANG;
ZHAO, M.;
WANG, Y.;
LV, A. J.;
WU, G. M.;
XING, G. J.

Publication type:

Article

Works matching DE "SEMICONDUCTOR diffusion"

Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO<sub>3-δ</sub> Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance.

Interfacial reactions and diffusion path in gold-tin-nickel system during eutectic or thermo-compression bonding for 200 mm MEMS wafer level hermetic packaging.

Palladium diffusion in germanium.

Effect of dopants on the epitaxial growth and oxygen diffusion behaviors of CeO buffer layer for coated conductors.

Activation kinetics of the As acceptor in HgCdTe.

Photocurrent diffusion length in disordered GaN.

Photoacoustic investigation of the effective diffusivity of two-layer semiconductors.

Laser-assisted selective emitters and the role of laser doping.

Heterogeneous Combustion of a Pair of Interacting Particles with an Arbitrarily Shaped Surface.

Nanoscale volume diffusion.

Electron microscopy study of ion beam synthesized β-FeSi<sub>2</sub>.

THE STUDY OF THE BIOMORPHIC SILICON CARBIDE STRUCTURE BY RAMAN SPECTROSCOPY.

CHUA'S CIRCUITS SYNCHRONIZATION WITH DIFFUSIVE COUPLING:: NEW RESULTS.

Mathematical aspects of semiconductor modeling.

Large disparity between gallium and antimony self-diffusion in gallium antimonide.

Global Existence and Extinction of Weak Solutions to a Class of Semiconductor Equations with Fast Diffusion Terms.

Tracking and reconstruction methods for moving-interfaces.

Applications of Fast Scanning Tunneling Microscopy: A Review.

Impurity diffusion through strained semiconductors.

An analysis of a kick-out diffusion mechanism with charge effects.

Superionic conductivity in TlGaTe crystals.

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.

Radiation damage of contact structures with diffusion barriers exposed to irradiation with <sup>60</sup>Coγ-ray photons.

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off.

A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.

Measurement of the diffusion length of minority charge carriers using real Schottky barriers.

Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF<sub>3</sub> Annealing.

Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa.

MONTE CARLO SIMULATION OF THE KINETICS IN THE GROWTH OF SEMICONDUCTOR QUANTUM DOTS.