Works matching DE "LOW-dimensional semiconductors"
1
- 2018
- Lin, Shenghuang;
- Bai, Gongxun;
- Liu, Zhike;
- Xu, Zaiquan;
- Hu, Zhixin
- Editorial
2
- International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 1, p. 1, doi. 10.1142/S0129156402001113
- Borovitskaya, Elena;
- Shur, Michael S.
- Article
3
- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2018, v. 28, n. 10, p. N.PAG, doi. 10.1142/S0218127418300343
- Article
4
- Journal of Active & Passive Electronic Devices, 2014, v. 9, n. 2/3, p. 207
- LAKHLEF, AHCENE;
- BENFDILA, AREZKI
- Article
5
- Current Science (00113891), 2015, v. 108, n. 5, p. 789
- Alwarappan, Subbiah;
- Pillai, Vijayamohanan K.
- Article
6
- Chemical Engineering Research & Design: Transactions of the Institution of Chemical Engineers Part A, 2010, v. 88, n. 3, p. 342, doi. 10.1016/j.cherd.2009.10.008
- Balakotaiah, Vemuri;
- Ratnakar, Ram R.
- Article
7
- WIREs: Computational Molecular Science, 2017, v. 7, n. 4, p. n/a, doi. 10.1002/wcms.1314
- Li, Xingxing;
- Yang, Jinlong
- Article
8
- Journal of Statistical Physics, 2015, v. 161, n. 1, p. 210, doi. 10.1007/s10955-015-1314-x
- Article
9
- Journal of Materials Science, 2008, v. 43, n. 4, p. 1460, doi. 10.1007/s10853-007-2307-1
- Costa, Pedro M. F. J.;
- Golberg, Dmitri;
- Guozhen Shen;
- Mitome, Masanori;
- Bando, Yoshio
- Article
10
- Journal of Materials Science, 2006, v. 41, n. 24, p. 8166, doi. 10.1007/s10853-006-0392-1
- Harrower, C. T.;
- Oliver, D. R.
- Article
11
- Nature, 2014, v. 505, n. 7484, p. 528, doi. 10.1038/nature12800
- Young, A. F.;
- Sanchez-Yamagishi, J. D.;
- Hunt, B.;
- Choi, S. H.;
- Watanabe, K.;
- Taniguchi, T.;
- Ashoori, R. C.;
- Jarillo-Herrero, P.
- Article
12
- Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 1, p. 157, doi. 10.1134/1.1787088
- Article
13
- Journal of Experimental & Theoretical Physics, 1997, v. 85, n. 5, p. 943, doi. 10.1134/1.558399
- Demishev, S. V.;
- Semeno, A. V.;
- Sluchanko, N. E.;
- Samarin, N. A.;
- Vasil’ev, A. N.;
- Leonyuk, L. I.
- Article
14
- Advances in Physics, 2008, v. 57, n. 5, p. 457, doi. 10.1080/00018730802538522
- Article
15
- Advances in Physics, 2002, v. 51, n. 2, p. 799, doi. 10.1080/00018730110117451
- Article
16
- Advances in Physics, 1995, v. 44, n. 4, p. 299, doi. 10.1080/00018739500101546
- Article
17
- Nature Nanotechnology, 2008, v. 3, n. 4, p. 201, doi. 10.1038/nnano.2008.60
- Zhaohui Zhong;
- Gabor, Nathaniel M.;
- Sharping, Jay E.;
- Gaeta, Alexander L.;
- McEuen, Paul L.
- Article
18
- Nature Physics, 2008, v. 4, n. 6, p. 444, doi. 10.1038/nphys979
- Article
19
- Nature Physics, 2006, v. 2, n. 9, p. 609, doi. 10.1038/nphys390
- Ganichev, Sergey D.;
- Bel'kov, Vasily V.;
- Tarasenko, Sergey A.;
- Danilov, Sergey N.;
- Giglberger, Stephan;
- Hoffmann, Christoph;
- Ivchenko, Eougenious L.;
- Weiss, Dieter;
- Wegscheider, Werner;
- Gerl, Christian;
- Schuh, Dieter;
- Stahl, Joachim;
- De Boeck, Jo;
- Borghs, Gustaaf;
- Prettl, Wilhelm
- Article
20
- Acta Physica Polonica: A, 2014, v. 125, n. 2, p. 205, doi. 10.12693/APhysPolA.125.205
- Article
23
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, v. 20, n. 19, p. 2624, doi. 10.1142/S0217979206035102
- Article
24
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2004, v. 18, n. 27-29, p. 3637, doi. 10.1142/S0217979204027189
- Radantsev, V. F.;
- Kulaev, G. I.;
- Kruzhaev, V. V.
- Article
25
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 10, p. 1511, doi. 10.1142/S0217979202010294
- Article
26
- European Physical Journal B: Condensed Matter, 2003, v. 35, n. 1, p. 125, doi. 10.1140/epjb/e2003-00263-7
- Article
27
- JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2011, v. 63, n. 9, p. 20, doi. 10.1007/s11837-011-0153-8
- Semichaevsky, A.;
- Goldman, R.;
- Johnson, H.
- Article
28
- JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2011, v. 63, n. 9, p. 19, doi. 10.1007/s11837-011-0151-x
- Article
29
- Annalen der Physik, 2018, v. 530, n. 12, p. N.PAG, doi. 10.1002/andp.201800270
- Well, Natalija;
- Zaharko, Oksana;
- Delley, Bernard;
- Skoulatos, Markos;
- Georgii, Robert;
- Smaalen, Sander;
- Rüegg, Christian
- Article
30
- Journal of Experimental & Theoretical Physics, 2016, v. 122, n. 3, p. 587, doi. 10.1134/S1063776116030201
- Article
31
- Journal of Experimental & Theoretical Physics, 2013, v. 117, n. 3, p. 418, doi. 10.1134/S1063776113110113
- Kopnin, N.;
- Khaymovich, I.;
- Mel'nikov, A.
- Article
32
- Acta Physica Polonica: A, 2012, v. 121, n. 5/6, p. 1089, doi. 10.12693/APhysPolA.121.1089
- Schmidt, B.;
- Siahatgar, M.;
- Thalmeier, P.
- Article
33
- Scientific Reports, 2015, p. 13190, doi. 10.1038/srep13190
- Kuehn, Christian;
- Zschaler, Gerd;
- Gross, Thilo
- Article
34
- Scientific Reports, 2015, p. 11623, doi. 10.1038/srep11623
- Chen, H.-H.;
- Su, S. H.;
- Chang, S.-L.;
- Cheng, B.-Y.;
- Chen, S. W.;
- Chen, H.-Y.;
- Lin, M.-F.;
- Huang, J. C. A.
- Article
35
- European Physical Journal: Special Topics, 2017, v. 226, n. 3, p. 433, doi. 10.1140/epjst/e2016-60268-0
- Riquelme-Galván, Mauricio;
- Robledo, Alberto
- Article
36
- Surface Review & Letters, 2002, v. 9, n. 2, p. 995, doi. 10.1142/S0218625X02001902
- Article
37
- Mathematical Methods in the Applied Sciences, 2017, v. 40, n. 10, p. 3637, doi. 10.1002/mma.4250
- Theljani, Anis;
- Belhachmi, Zakaria;
- Kallel, Moez;
- Moakher, Maher
- Article
38
- Nature Nanotechnology, 2013, v. 8, n. 11, p. 853, doi. 10.1038/nnano.2013.188
- Zakeri, Kh.;
- Chuang, T.-H.;
- Ernst, A.;
- Sandratskii, L. M.;
- Buczek, P.;
- Qin, H. J.;
- Zhang, Y.;
- Kirschner, J.
- Article
39
- Semiconductors, 2011, v. 45, n. 8, p. 1032, doi. 10.1134/S1063782611080185
- Sinyavskii, E.;
- Karapetyan, S.
- Article
40
- Semiconductors, 2006, v. 40, n. 2, p. 210, doi. 10.1134/S1063782606020187
- Kul'bachinskiĭ, V. A.;
- Rogozin, V. A.;
- Kytin, V. G.;
- Lunin, R. A.;
- Zvonkov, B. N.;
- Dashevsky, Z. M.;
- Casian, V. A.
- Article
41
- Semiconductors, 2006, v. 40, n. 2, p. 217, doi. 10.1134/S1063782606020199
- Article
42
- Semiconductors, 2006, v. 40, n. 2, p. 229, doi. 10.1134/S1063782606020217
- Vostokov, N. V.;
- Drozdov, Yu. N.;
- Krasil’nik, Z. F.;
- Kuznetsov, O. A.;
- Lobanov, D. N.;
- Novikov, A. V.;
- Shaleev, M. V.
- Article
43
- Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
- Article
44
- Semiconductors, 2004, v. 38, n. 11, p. 1312, doi. 10.1134/1.1823066
- Mityagin, Yu. A.;
- Murzin, V. N.;
- Efimov, Yu. A.;
- Pishchulin, A. A.;
- Pyrkov, V. N.
- Article
45
- Semiconductors, 2004, v. 38, n. 11, p. 1316, doi. 10.1134/1.1823067
- Vedernikov, A. I.;
- Chaplik, A. V.
- Article
46
- Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
- Lundin, V. V.;
- Zavarin, E. E.;
- Besulkin, A. I.;
- Gladyshev, A. G.;
- Sakharov, A. V.;
- Kokorev, M. F.;
- Shmidt, N. M.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Kakanakov, R.
- Article
47
- Semiconductors, 2004, v. 38, n. 4, p. 410, doi. 10.1134/1.1734668
- Glukhov, K. E.;
- Bercha, A. I.;
- Korbutyak, D. V.;
- Litovchenko, V. G.
- Article
48
- Semiconductors, 2004, v. 38, n. 4, p. 419, doi. 10.1134/1.1734669
- Khanin, Yu. N.;
- Vdovin, E. E.;
- Dubrovski&icaron;, Yu. V.
- Article
49
- Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670
- Karpovich, I. A.;
- Levichev, B. N.;
- Levichev, S. B.;
- Baidus, N. V.;
- Tikhov, S. V.;
- Filatov, D. O.;
- Gorshkov, A. P.;
- Ermakov, S. Yu.
- Article
50
- Semiconductors, 2004, v. 38, n. 4, p. 437, doi. 10.1134/1.1734671
- Khabarov, Yu. V.;
- Kapaev, V. V.;
- Petrov, V. A.
- Article