Works matching DE "INTEGRATED circuit passivation"
Results: 89
Long term integrity against corrosion of titanium used for TRU waste container.
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- Corrosion Engineering, Science & Technology, 2011, v. 46, n. 2, p. 159, doi. 10.1179/1743278210Y.0000000018
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Kinetics of oxide film growth on cobalt in neutral aqueous solutions.
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- Corrosion Engineering, Science & Technology, 2009, v. 44, n. 4, p. 261, doi. 10.1179/174327808X326928
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High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets.
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- Advanced Functional Materials, 2018, v. 28, n. 19, p. 1, doi. 10.1002/adfm.201706815
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Efficient Charge Collection Promoted by Interface Passivation Using Amino Acid Toward High Performance Perovskite Solar Cells.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800505
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Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800493
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Passivity-based robust feedback control for non-linear systems with input dynamical uncertainty.
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- International Journal of Control, 2004, v. 77, n. 6, p. 517, doi. 10.1080/00207170410001682498
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THE INFLUENCE OF THE OXYANIONS ON ANODIC AND CHEMICAL STEEL PASSIVATION IN POORLY MINERALIZED WATER.
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- Naukovi visti NTUU - KPI, 2008, v. 2008, n. 6, p. 119
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Thermo-Mechanical Failure Criterion at the Micron Scale in Electronic Devices.
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- International Journal of Fracture, 2003, v. 122, n. 1/2, p. 47, doi. 10.1023/B:FRAC.0000005374.52613.83
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Temperature-Dependent Electrical Properties of Al<sub>2</sub>O<sub>3</sub>-Passivated Multilayer MoS<sub>2</sub> Thin-Film Transistors.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 3, p. 424, doi. 10.3390/app8030424
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CORROSION BEHAVIOR OF SOME TITANIUM BASE ALLOYS IN ACID SOLUTIONS.
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- Materials & Manufacturing Processes, 2005, v. 20, n. 1, p. 35, doi. 10.1081/AMP-200041602
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TEMPERATURE DEPENDENCE OF MICROELECTRONIC DEVICE FAILURES.
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- Quality & Reliability Engineering International, 1990, v. 6, n. 4, p. 275, doi. 10.1002/qre.4680060410
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Performance improvement of AlGaN/GaN HEMTs using two-step silicon nitride passivation.
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- Microwave & Optical Technology Letters, 2010, v. 52, n. 7, p. 1614, doi. 10.1002/mop.25266
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EFFECT OF SILICON CARBIDE PASSIVATION FILM ON THE RESONANCE CHARACTERISTICS OF CANTILEVER.
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- Integrated Ferroelectrics, 2007, v. 88, n. 1, p. 76, doi. 10.1080/10584580601099009
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Passivation of HPGe detectors.
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- Instruments & Experimental Techniques, 2009, v. 52, n. 1, p. 137, doi. 10.1134/S0020441209010230
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Segmented high-purity germanium detectors.
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- Instruments & Experimental Techniques, 2007, v. 50, n. 6, p. 757, doi. 10.1134/S0020441207060073
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Adhesion between an underfill and the passivation layer in flip-chip packaging.
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- Journal of Adhesion Science & Technology, 2004, v. 18, n. 2, p. 275, doi. 10.1163/156856104772759467
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Efficient Low-Cost IBC Solar Cells with a Front Floating Emitter: Structure Optimization and Passivation Layer Study.
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- Energies (19961073), 2018, v. 11, n. 4, p. 939, doi. 10.3390/en11040939
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A Feedback Passivation Design for DC Microgrid and Its DC/DC Converters.
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- Energies (19961073), 2017, v. 10, n. 1, p. 14, doi. 10.3390/en10010014
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APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 557, doi. 10.1142/S0129156411006854
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Cu-Cu Hermetic Seal Enhancement Using Self-Assembled Monolayer Passivation.
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- Journal of Electronic Materials, 2013, v. 42, n. 3, p. 502, doi. 10.1007/s11664-012-2353-6
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Thermomechanical Reliability Study of Benzocyclobutene Film in Wafer-Level Chip-Size Package.
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- Journal of Electronic Materials, 2012, v. 41, n. 4, p. 706, doi. 10.1007/s11664-012-1944-6
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Effects of Potential and Mechanical Stimulation on Oxidation of Tantalum During Electrochemical Mechanical Polishing.
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- Journal of Electronic Materials, 2012, v. 41, n. 3, p. 624, doi. 10.1007/s11664-011-1832-5
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Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation.
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- Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1668, doi. 10.1007/s11664-011-1640-y
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Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis.
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- Journal of Electronic Materials, 2010, v. 39, n. 12, p. 2681, doi. 10.1007/s11664-010-1367-1
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Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 11, p. 2452, doi. 10.1007/s11664-010-1343-9
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A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1019, doi. 10.1007/s11664-010-1083-x
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Effective Surface Passivation of CdMnTe Materials.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1015, doi. 10.1007/s11664-010-1090-y
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Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 951, doi. 10.1007/s11664-010-1152-1
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Microstructural Characterization of CdTe Surface Passivation Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 924, doi. 10.1007/s11664-010-1176-6
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Compositionally Graded Interface for Passivation of HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2006, v. 35, n. 10, p. 1793, doi. 10.1007/s11664-006-0159-0
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A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6
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Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0
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Cadmium Sulfide Passivation of InGaAs/InP Mesa p-i-n Photodiodes.
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- Journal of Electronic Materials, 2005, v. 34, n. 11, p. 1368, doi. 10.1007/s11664-005-0192-4
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Excess Si Atoms Near the Pyrolytic-Gas-Passivated Ultrathin Silicon Oxide/Si(100) Interface.
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- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 802, doi. 10.1007/s11664-004-0245-0
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Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.
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- Journal of Electronic Materials, 2004, v. 33, n. 5, p. 436
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Influence of a-Si:H deposition temperature on thermal stability of a-Si:H/SiN<sub>x</sub>:H stacks.
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- Photovoltaics International, 2010, n. 10, p. 80
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Fabrication of single diffusion step selective-emitter solar cells.
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- Photovoltaics International, 2010, n. 10, p. 65
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Flexible GIGS thin-film PV establishes module manufacturing base, moves closer to BIPV market readiness.
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- Photovoltaics International, 2009, n. 4, p. 93
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PECVD a-Si layers for industrial high- efficiency solar cell processing.
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- Photovoltaics International, 2009, n. 4, p. 68
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Corrosion Behavior of Passivated 316LSS with Ag Coating as PEMFC Bipolar Plate.
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- International Journal of Corrosion, 2011, p. 1, doi. 10.1155/2011/103785
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Aqueous slip casting and hydrolysis assisted solidification of MgAl<sub>2</sub>O<sub>4</sub> spinel ceramics.
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- Advances in Applied Ceramics: Structural, Functional & Bioceramics, 2011, v. 110, n. 2, p. 63, doi. 10.1179/174367610X12804792635260
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Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-part I. Experiment.
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- Journal of Solid State Electrochemistry, 2011, v. 15, n. 11/12, p. 2311, doi. 10.1007/s10008-011-1463-z
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Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-part II. The model.
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- Journal of Solid State Electrochemistry, 2011, v. 15, n. 11/12, p. 2321, doi. 10.1007/s10008-011-1464-y
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Electrochemical performance of Mg-9Al-1Zn alloy in aqueous medium.
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- Journal of Solid State Electrochemistry, 2011, v. 15, n. 1, p. 125, doi. 10.1007/s10008-010-1074-0
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AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer.
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- Electronics (2079-9292), 2018, v. 7, n. 12, p. 416, doi. 10.3390/electronics7120416
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The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si<sub>3</sub>N<sub>4</sub> surface passivation.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 4, p. 1, doi. 10.1007/s00339-018-1702-6
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Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001).
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- Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 6, p. 1339, doi. 10.1007/s00339-004-3162-4
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PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells.
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- Advances in OptoElectronics, 2008, p. 1, doi. 10.1155/2008/485467
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TECHNIQUES RELATED TO THE FABRICATION OF SILICON AND GERMANIUM GUARD-RING STRUCTURAL DETECTORS AND THEIR USE IN NUCLEAR PHYSICS.
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- Nucleus, 1998, n. 25, p. 41
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Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces.
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- Optica Applicata, 2011, v. 41, n. 2, p. 441
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