Works matching DE "POOLE-Frenkel effect"
Results: 64
REFINEMENT OF THE DIATOMIC MODEL OF THE INTERATOMIC INTERACTIONS OF FRENKEL FOR THE IMPROVEMENT OF METHODS OF NON-DESTRUCTIVE QUALITY CONTROL.
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- Periódico Tchê Química, 2018, v. 15, p. 482
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Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes.
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- Journal of Chemistry, 2017, p. 1, doi. 10.1155/2017/9715069
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Origin of Off‐State Current in Multilayered MoTe<sub>2</sub> Field‐Effect Transistors: Gate‐Induced Drain Leakage and Poole–Frenkel Conduction.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 7, p. 1, doi. 10.1002/pssr.202000158
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Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy.
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- Journal of Materials Science, 2017, v. 52, n. 9, p. 5223, doi. 10.1007/s10853-017-0763-9
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Current conduction mechanisms in HfO<sub>2</sub> and SrHfON thin films prepared by magnetron sputtering.
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- Journal of Materials Science, 2014, v. 49, n. 4, p. 1875, doi. 10.1007/s10853-013-7876-6
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Measurement of the Charge Carrier Mobility in MEH-PPV and MEH-PPV-POSS Organic Semiconductor Films.
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- Russian Physics Journal, 2015, v. 57, n. 11, p. 1584, doi. 10.1007/s11182-015-0422-z
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Leakage currents in ferroelectric thin films.
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- Phase Transitions, 2013, v. 86, n. 11, p. 1141, doi. 10.1080/01411594.2013.790033
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Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors.
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- Coatings (2079-6412), 2021, v. 11, n. 10, p. 1192, doi. 10.3390/coatings11101192
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Thermionic Injection and Contact Resistance Model for Bottom Contact Organic Field-Effect Transistors.
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- Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3078, doi. 10.1007/s11664-024-11065-1
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Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO<sub>2</sub>-Based RRAM Devices.
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- Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1541, doi. 10.1007/s11664-022-10136-5
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Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode.
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- Journal of Electronic Materials, 2021, v. 50, n. 12, p. 7044, doi. 10.1007/s11664-021-09254-3
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Analysis of Dislocations in CdZnTe Epitaxial Film with Kelvin Probe and Conductive Atomic Force Microscopy.
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- Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3907, doi. 10.1007/s11664-020-08094-x
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Enhancement in the Microelectronic Properties of a PFB–CdSe Quantum Dots Nanocomposite Based Schottky Barrier Diode.
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- Journal of Electronic Materials, 2019, v. 48, n. 8, p. 5169, doi. 10.1007/s11664-019-07328-x
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The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films.
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- Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1620, doi. 10.1007/s11664-017-5979-6
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Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/AlO/GaN MIS Diode.
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- Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5655, doi. 10.1007/s11664-016-4809-6
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Effects of Annealing on Electrical Characteristics and Current Transport Mechanisms of the Y/ p-GaN Schottky Diode.
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- Journal of Electronic Materials, 2016, v. 45, n. 7, p. 3268, doi. 10.1007/s11664-016-4490-9
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Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films.
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- Journal of Electronic Materials, 2013, v. 42, n. 3, p. 389, doi. 10.1007/s11664-012-2344-7
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Memory switching characteristics in amorphous ZnIn<sub>2</sub>Se<sub>4</sub> thin films.
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- Surface Engineering, 2015, v. 31, n. 7, p. 556, doi. 10.1179/1743294415Y.0000000001
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Modelling of Intrinsic Defects in CaYAl<sub>3</sub>O<sub>7</sub>.
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- Acta Physica Polonica: A, 2018, v. 133, n. 4, p. 781, doi. 10.12693/APhysPolA.133.781
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Correlation between the Band-Gap Energy and the Electrical Conductivity in MPr<sub>2</sub>W<sub>2</sub>O<sub>10</sub> Tungstates (Where M = Cd, Co, Mn).
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- Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-94, doi. 10.12693/APhysPolA.129.A-94
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The Frenkel–Poole Effect in the Ionization of an Acceptor Impurity of Boron in Diamond in a Strong Electric Field.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 11, p. 1336, doi. 10.1134/S1064226920110029
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Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode.
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- Journal of Applied Polymer Science, 2017, v. 134, n. 19, p. n/a, doi. 10.1002/app.44817
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Еlectronic currents in the (+)Bi/BiO/electrolyte system during tensiostatic anodization.
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- Journal of Solid State Electrochemistry, 2013, v. 17, n. 8, p. 2341, doi. 10.1007/s10008-013-2109-0
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Stabilized resistive switching behaviors of a Pt/TaO<sub> x</sub>/TiN RRAM under different oxygen contents.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 9, p. 2189, doi. 10.1002/pssa.201431260
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Heterostructure of GeSe<sub>2−x</sub>Sn<sub>x</sub>/n-Si solar cells: electronic properties and improvement of photoelectrical performance.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 6, p. N.PAG, doi. 10.1007/s00339-019-2674-x
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Nanoparticle-assisted Frenkel-Poole emission in two-terminal charging-controlled memory devices based on Si-rich silicon nitride thin films.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 10, p. 1, doi. 10.1007/s00339-017-1279-5
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The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 7, p. 1, doi. 10.1007/s00339-017-1100-5
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A study on electrical properties of Au/4H-SiC Schottky diode under illumination.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20130, doi. 10.1007/s10854-021-06480-7
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Different degradation mechanism by conduction region in AsTeGeSiN threshold switching device.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 22, p. 1202, doi. 10.1049/el.2020.1946
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Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 4, p. 199, doi. 10.1049/el.2019.3229
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Electrical characterisation of epitaxial AlN/Nb<sub>2</sub>N heterostructures grown by molecular beam epitaxy.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 14, p. 1263, doi. 10.1049/el.2016.0331
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The temperature dependence and field dependence of the mobility of charge carriers in the multiple-trapping model with a Gaussian trap distribution.
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- Polymer Science -- Series A, 2015, v. 57, n. 1, p. 94, doi. 10.1134/S0965545X15010125
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Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-73407-3
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Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system.
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- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 5, p. 1, doi. 10.1007/s00339-023-06616-y
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Research of carrier mobility in NPD through negative differential susceptance spectra.
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- European Physical Journal - Applied Physics, 2014, v. 68, n. 3, p. N.PAG, doi. 10.1051/epjap/2014140298
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Local current conduction due to edge dislocations in deformed GaN studied by scanning spreading resistance microscopy.
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- European Physical Journal - Applied Physics, 2013, v. 61, n. 1, p. 00, doi. 10.1051/epjap/2012120318
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Interpretation of Frenkel's Theory of Sintering Considering Evolution of Activated Pores: I. Confirmation of the Time Constant.
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- Science of Sintering, 2014, v. 46, n. 2, p. 141, doi. 10.2298/SOS1402141Y
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Resonant Tunneling Method for Measuring Fullerene Concentration in Organosilicon Composites.
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- Measurement Techniques, 2016, v. 59, n. 6, p. 605, doi. 10.1007/s11018-016-1016-z
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CONDUCTION MECHANISMS IN ORGANIC-BASED RECTIFYING DIODE.
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- Anadolu University of Sciences & Technology A: Applied Sciences & Engineering, 2016, v. 17, n. 4, p. 717, doi. 10.18038/aubtda.267118
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Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect.
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- Semiconductors, 2020, v. 54, n. 5, p. 518, doi. 10.1134/S1063782620050127
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On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide.
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- Semiconductors, 2019, v. 53, n. 7, p. 872, doi. 10.1134/S1063782619070121
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DLTS Investigation of the Energy Spectrum of Si:Mg Crystals.
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- Semiconductors, 2019, v. 53, n. 6, p. 789, doi. 10.1134/S1063782619060290
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Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.
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- Semiconductors, 2019, v. 53, n. 4, p. 552, doi. 10.1134/S1063782619040158
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Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide.
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- Semiconductors, 2018, v. 52, n. 9, p. 1114, doi. 10.1134/S1063782618090166
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Features of the dark conductivity of zinc selenide.
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- Semiconductors, 2014, v. 48, n. 3, p. 273, doi. 10.1134/S1063782614030087
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Current-voltage characteristics of MnGaSe single crystals.
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- Semiconductors, 2012, v. 46, n. 6, p. 701, doi. 10.1134/S1063782612060231
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CdTe X/γ-ray Detectors with Different Contact Materials.
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- Sensors (14248220), 2021, v. 21, n. 10, p. 3518, doi. 10.3390/s21103518
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Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 18, p. 15233, doi. 10.1007/s10854-020-04088-x
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Analysis of forward and reverse biased current–voltage characteristics of Al/Al<sub>2</sub>O<sub>3</sub>/n-Si Schottky diode with atomic layer deposited Al<sub>2</sub>O<sub>3</sub> thin film interlayer.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19383, doi. 10.1007/s10854-019-02300-1
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Parameter extraction of gate tunneling current in metal-insulator-semiconductor capacitors based on ultra-thin atomic-layer deposited Al<sub>2</sub>O<sub>3</sub>.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15496, doi. 10.1007/s10854-018-9104-2
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