Works matching IS 03701972 AND DT 2023 AND VI 260 AND IP 8

Results: 24

Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200489

By:

Iso, Kenji;
Ikeda, Hirotaka;
Mochizuki, Tae;
Odani, Takafumi;
Izumisawa, Satoru

Publication type:

Article

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200508

By:

Meier, Falco;
Littmann, Mario;
Bürger, Julius;
Riedl, Thomas;
Kool, Daniel;
Lindner, Jörg;
Reuter, Dirk;
As, Donat Josef

Publication type:

Article

Origins of Electrical Compensation in Si‐Doped HVPE GaN.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568

By:

Prozheev, Igor;
Iwinska, Malgorzata;
Sochacki, Tomasz;
Bockowski, Michal;
Bès, René;
Tuomisto, Filip

Publication type:

Article

Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200489

By:

Iso, Kenji;
Ikeda, Hirotaka;
Mochizuki, Tae;
Odani, Takafumi;
Izumisawa, Satoru

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202370022
Publication type:: Article

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200508

By:

Meier, Falco;
Littmann, Mario;
Bürger, Julius;
Riedl, Thomas;
Kool, Daniel;
Lindner, Jörg;
Reuter, Dirk;
As, Donat Josef

Publication type:

Article

Origins of Electrical Compensation in Si‐Doped HVPE GaN.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568

By:

Prozheev, Igor;
Iwinska, Malgorzata;
Sochacki, Tomasz;
Bockowski, Michal;
Bès, René;
Tuomisto, Filip

Publication type:

Article

Nitride Semiconductors.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202300286

By:

Kneissl, Michael;
Christen, Jürgen;
Hoffmann, Axel;
Monemar, Bo;
Wernicke, Tim;
Schwarz, Ulrich;
Haglund, Åsa;
Meneghini, Matteo

Publication type:

Article

Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200583

By:

Murata, Tomotaka;
Ikeda, Kazuhisa;
Yamasaki, Jun;
Uemukai, Masahiro;
Tanikawa, Tomoyuki;
Katayama, Ryuji

Publication type:

Article

Growth of (101¯1) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200582

By:

Wannous, Beatrice;
Coulon, Pierre-Marie;
Dupré, Ludovic;
Rol, Fabian;
Rochat, Névine;
Zuniga-Perez, Jesus;
Vennéguès, Philippe;
Feuillet, Guy;
Templier, François

Publication type:

Article

Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200578

By:

Sun, Michael;
Valdueza-Felip, Sirona;
Naranjo, Fernando B.

Publication type:

Article

Control of Polarity of AlN Grown on Sapphire Substrate and Growth with Both Al‐ and N‐Polarities.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200576

By:

Tanigawa, Shunsuke;
Sakoyama, Takuya;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO<sub>4</sub> through Trihalide Vapor‐Phase Epitaxy.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200572

By:

Kobayashi, Iori;
Hieda, Ryohei;
Murata, Hiroto;
Murakami, Hisashi

Publication type:

Article

Origins of Electrical Compensation in Si‐Doped HVPE GaN.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568

By:

Prozheev, Igor;
Iwinska, Malgorzata;
Sochacki, Tomasz;
Bockowski, Michal;
Bès, René;
Tuomisto, Filip

Publication type:

Article

Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200565

By:

Becht, Conny;
Schwarz, Ulrich T.;
Binder, Michael;
Galler, Bastian

Publication type:

Article

On the Origin of the Yellow Luminescence Band in GaN.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200488

By:

Reshchikov, Michael A.

Publication type:

Article

Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200549

By:

Kawamura, Takahiro;
Basaki, Kouhei;
Korei, Akito;
Akiyama, Toru;
Kangawa, Yoshihiro

Publication type:

Article

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200508

By:

Meier, Falco;
Littmann, Mario;
Bürger, Julius;
Riedl, Thomas;
Kool, Daniel;
Lindner, Jörg;
Reuter, Dirk;
As, Donat Josef

Publication type:

Article

Quasi‐Van der Waals Epitaxial Growth of GaN on Hexagonal Boron Nitride via Metal–Organic Chemical Vapor Deposition.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200496

By:

Han, Min;
Ryu, Beo Deul;
Ko, Kang Bok;
Hong, Chang-Hee

Publication type:

Article

Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200492

By:

Miyoshi, Makoto;
Fujisawa, Takahiro;
Nakabayashi, Taiki;
Egawa, Takashi;
Takeuchi, Tetsuya;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200489

By:

Iso, Kenji;
Ikeda, Hirotaka;
Mochizuki, Tae;
Odani, Takafumi;
Izumisawa, Satoru

Publication type:

Article

Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200545

By:

Markevich, Vladimir P.;
Halsall, Matthew P.;
Sun, Lijie;
Crowe, Iain F.;
Peaker, Anthony R.;
Kruszewski, Piotr;
Plesiewicz, Jerzy;
Prystawko, Pawel;
Bulka, Sylwester;
Jakiela, Rafal

Publication type:

Article

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200487

By:

Reshchikov, Michael Alexander;
Vorobiov, Mykhailo;
Andrieiev, Oleksandr;
McEwen, Benjamin;
Rocco, Emma;
Meyers, Vincent;
Demchenko, Denis O.;
Shahedipour-Sandvik, F. Shadi

Publication type:

Article

Reduction in Residual Impurities in Chemical Vapor Deposition–Grown Hexagonal Boron Nitride Thin Films.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200352

By:

Yamada, Hisashi

Publication type:

Article