Works matching IS 03701972 AND DT 2024 AND VI 261 AND IP 11
Results: 46
Masthead.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202470023
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- Article
Cover Picture.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202470022
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- Article
Nitride Semiconductors.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400527
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Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400161
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Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400071
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Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400067
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Red Emission of Well‐Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective‐Area Growth.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400064
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Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400063
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Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A<sub>1</sub>(LO) and E<sub>2</sub>(high) Phonons in a GaInN/GaN Heterostructure.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400057
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Comparison of SiN<sub>x</sub> Dielectric Layer Grown by Plasma‐Enhanced Chemical Vapor Deposition, Low‐Pressure Chemical Vapor Deposition, and Metal‐Organic Chemical Vapor Deposition in Diamond‐ and GaN‐Based Integrated Devices
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400052
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- Article
Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO<sub>4</sub> Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400047
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- Article
Metal–Organic Vapor Phase Epitaxy of High‐Quality GaN on Al‐Pretreated Sapphire Substrates Without Using Low‐Temperature Buffer Layers.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400043
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Advantages of Ultrathin AlN/GaN/AlN Quantum Wells for Excitonic Population Distribution and Transition Features Studied by Phononic–Excitonic–Radiative Model.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400038
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Low‐Pressure Chemical Vapor Deposition of Hexagonal Boron Nitride on a‐Plane Sapphire Using BCl<sub>3</sub> as a Boron Source.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400037
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Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400036
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Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400035
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Crystal Quality and Efficiency Engineering of InGaN‐Based Red Light‐Emitting Diodes.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400034
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Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400033
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Analysis of Subsurface Damage Structures of Gallium Nitride Substrates Induced by Mechanical Polishing with Diamond Abrasives.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400031
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Surface Oxidation of GaN(0001) Simulated by Charge‐Transfer‐Type Molecular Dynamics.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400030
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Characterizations of Subbandgap Optical Absorption in Undoped‐GaN and 90 nm‐Thick Al<sub>1−x</sub>In<sub>x</sub>N Thin Film on Sapphire Substrates Grown by Metal–Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400029
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Origin of Black Color in Heavily Doped n‐Type GaN Crystal.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400027
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Adiabatic Potential for Conformational Change of V<sub>Ga</sub>–V<sub>N</sub> Complex Defects in GaN.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400026
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Reduction in Gap State Density near Valence Band Edge at Al<sub>2</sub>O<sub>3</sub>/p‐type GaN Interface by Photoelectrochemical Etching and Subsequent SiO<sub>2</sub> Cap Annealing.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400025
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High‐Quality Nonpolar a‐Plane AlGaN Film Grown on Si‐Doped AlN Template by Metal Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400022
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Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400021
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Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400020
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Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400019
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Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400018
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Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO<sub>4</sub> Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400017
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Impact of Boron Atom Clustering on the Electronic Structure of (B,In)N Alloys.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400016
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Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400015
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Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO<sub>4</sub> Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400014
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In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400010
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Optimization of In‐Reactor In Situ Activation Annealing Conditions for Tunnel Junction Layers in Multiquantum Shell GaN‐Based Devices.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400009
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Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300585
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Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300584
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Analysis of Altered Layers Formed during Substrate Exfoliation of AlGaN Crystals Grown on Periodic AlN Nanopillars Using the Heated‐Pressurized Water Method.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300574
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An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300573
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Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300567
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Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300559
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Metal–Organic Chemical Vapor Deposition of n‐AlGaN Grown on Strain‐Relaxed Distributed Bragg Reflector Buffer Layers.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300558
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Presence of High Density Positive Fixed Charges at ALD–Al<sub>2</sub>O<sub>3</sub>/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300555
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The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300542
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Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300528
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Mapping Analysis of Crystalline Perfection and UV‐C Transparency of 2‐in. Aluminum Nitride Substrates Grown by Physical Vapor Transport.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300482
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