Works matching IS 03701972 AND DT 2022 AND VI 259 AND IP 2

Results: 31

Quasiperiodic Van der Waals Heterostructures of Graphene and Hexagonal Boron Nitride.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100423

By:

Bhandary, Sumanta;
Haldar, Soumyajyoti;
Sanyal, Biplab

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202270006
Publication type:: Article

Chemical Functionalization of Ultrathin Tin Layers.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100499

By:

de Oliveira, Andre F. P.;
da Rosa, Andreia Luisa;
Frauenheim, Thomas

Publication type:

Article

GaAsBi: From Molecular Beam Epitaxy Growth to Devices.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100330

By:

Richards, Robert D.;
Bailey, Nicholas J.;
Liu, Yuchen;
Rockett, Thomas B. O.;
Mohmad, Abdul R.

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202200031
Publication type:: Article

Mass Imbalance Effects in the Excitonic Condensation of the Extended Falicov–Kimball Model.

Published in:

2022

By:

Ninh, Quoc-Huy;
Phan, Van-Nham

Publication type:

Correction Notice

Resistively Detected NMR Lineshapes in a Local Filling ν<1 Quantum Hall Breakdown.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100504

By:

Fauzi, Mohammad H.;
Sobue, Takeshi;
Noorhidayati, Annisa;
Sato, Ken;
Hashimoto, Katsushi;
Hirayama, Yoshiro

Publication type:

Article

Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100331

By:

Shapenkov, Sevastian;
Vyvenko, Oleg;
Nikolaev, Vladimir;
Stepanov, Sergei;
Pechnikov, Alexei;
Scheglov, Mikhail;
Varygin, Georgiy

Publication type:

Article

Influence of Noise–Anharmonicity Interplay on a Few Physical Properties of Quantum Dots.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100497

By:

Arif, Sk. Md.;
Roy, Debi;
Ghosh, Manas

Publication type:

Article

Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga2O3 Grown by the Optical Floating Zone Technique.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100496

By:

Dhanabalan, Dhandapani;
Ananthu, Vijayan;
Akshita, Kaza Venkata;
Bhattacharya, Sudipto;
Varadarajan, Elangovan;
Ganesamoorthy, Sarveswaran;
Moorthy Babu, Sridharan;
Natarajan, Venkatachalam;
Verma, Sudeep;
Srivatsava, Meenakshi;
Lourdudoss, Sebastian

Publication type:

Article

Optical Stability of Thick‐Shell CdSe@ZnS/ZnS Quantum Dots Dissolved in n‐Octane in Wide Range of Mass Concentration: Photoluminescence Decay Study.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100483

By:

Adamski, Adrian;
Zatryb, Grzegorz;
Chrzanowski, Maciej;
Lesiak, Anna;
Podhorodecki, Artur

Publication type:

Article

Intrinsic Planar Defects in Germanium and Their Contribution to the Excess Specific Heat at High Temperatures.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100463

By:

Kondrin, Mikhail;
Lebed, Yulia;
Brazhkin, Vadim

Publication type:

Article

P4S10 Modification for Lithium Metal Anode Surface.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100455

By:

Wei, Cheng-Dong;
Xue, Hong-Tao;
Li, Zhou;
Zhao, Qin-Shan;
Li, Wen-Xiang;
Tang, Fu-Ling

Publication type:

Article

Alloy Engineering of 2D Van der Waals Chromium Mixed Trihalides as Ferromagnetic Semiconductors.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100443

By:

Chen, Ying;
Wang, Guangzhao;
Yuan, Hongkuan;
Chen, Hong

Publication type:

Article

Quasiperiodic Van der Waals Heterostructures of Graphene and Hexagonal Boron Nitride.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100423

By:

Bhandary, Sumanta;
Haldar, Soumyajyoti;
Sanyal, Biplab

Publication type:

Article

Mist Chemical Vapor Deposition Growth of α‐In2O3 Films Using Indium Oxide Powder as Source Precursor.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100414

By:

Taguchi, Akito;
Takahashi, Subaru;
Sekiguchi, Atsushi;
Kaneko, Kentaro;
Fujita, Shizuo;
Onuma, Takeyoshi;
Honda, Tohru;
Yamaguchi, Tomohiro

Publication type:

Article

Alkyl‐Amino Functionalized Reduced‐Graphene‐Oxide–heptadecan‐9‐amine‐Based Spin‐Coated Microsupercapacitors for On‐Chip Low Power Electronics.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100304

By:

Vyas, Agin;
Zare Hajibagher, Simin;
Mendez Romero, Ulises;
Azega, R. K.;
Wang, Ergang;
Lundgren, Per;
Enoksson, Peter;
Smith, Anderson D.

Publication type:

Article

Investigation of the Persistence Conductivity and Photoelectric Characteristics in Detectors with Interdigital Electrodes Based on β‐Ga2O3.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100341

By:

Kalygina, Vera;
Tsymbalov, Alexander;
Almaev, Aleksei;
Petrova, Julianna;
Podzyvalov, Sergey

Publication type:

Article

Amorphous p‐Type Conducting Zn–xIr Oxide (x > 0.13) Thin Films Deposited by Reactive Magnetron Cosputtering.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100374

By:

Zubkins, Martins;
Timoshenko, Janis;
Gabrusenoks, Jevgenijs;
Pudzs, Kaspars;
Azens, Andris;
Wang, Qin;
Purans, Juris

Publication type:

Article

Influence of Morphology‐Controlled Cu2ZnSnSe4 Nanoparticles for Environmental Remediation Process under Visible Light.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100309

By:

Sai Prasanna, Meenakshisundaram;
Imla Mary, Charles;
Senthilkumar, Muthu;
Manobalaji, Gandhi;
Moorthy Babu, Sridharan

Publication type:

Article

Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100306

By:

Almaev, Aleksei;
Nikolaev, Vladimir;
Butenko, Pavel;
Stepanov, Sergey;
Pechnikov, Aleksei;
Yakovlev, Nikita;
Sinyugin, Igor;
Shapenkov, Sevastian;
Scheglov, Mikhail

Publication type:

Article

Smooth Surface Morphology and Long Carrier Lifetime of InGaP Realized by Low‐Temperature‐Grown Cover Layer.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100305

By:

Asami, Meita;
Watanabe, Kentaroh;
Nakano, Yoshiaki;
Sugiyama, Masakazu

Publication type:

Article

GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100362

By:

Manavaimaran, Balaji;
B. Ravichandran, Sivasankaran

Publication type:

Article

Vacuum Ultraviolet Emission Properties of Rocksalt‐Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100354

By:

Kosaka, Wataru;
Hoshi, Shoma;
Kudo, Kanta;
Kaneko, Kentaro;
Yamaguchi, Tomohiro;
Honda, Tohru;
Fujita, Shizuo;
Onuma, Takeyoshi

Publication type:

Article

First‐Principles Calculations on the Elastic, Electronic, and Phononic Properties of Sc2Al2C3.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100336

By:

Yao, Yu;
Wan, Xiangang;
Zhou, Jian

Publication type:

Article

Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100331

By:

Shapenkov, Sevastian;
Vyvenko, Oleg;
Nikolaev, Vladimir;
Stepanov, Sergei;
Pechnikov, Alexei;
Scheglov, Mikhail;
Varygin, Georgiy

Publication type:

Article

GaAsBi: From Molecular Beam Epitaxy Growth to Devices.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100330

By:

Richards, Robert D.;
Bailey, Nicholas J.;
Liu, Yuchen;
Rockett, Thomas B. O.;
Mohmad, Abdul R.

Publication type:

Article

Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100312

By:

Garbe, Valentin;
Schmid, Alexander;
Seidel, Sarah;
Abendroth, Barbara;
Stöcker, Hartmut;
Doering, Philipp;
Meyer, Dirk C.;
Heitmann, Johannes

Publication type:

Article

Nitrogen‐Induced Changes in the Electronic and Structural Properties of 4H‐SiC (0001)/SiO2 Interfaces.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100224

By:

Wang, Lu;
Dhar, Sarit;
Feldman, Leonard C.;
Kuroda, Marcelo A.

Publication type:

Article

Durable Activated Carbon Electrodes with a Green Binder.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100311

By:

R. K., Azega;
Haque, Mohammad Mazharul;
Vyas, Agin;
Tam, Pui Lam;
Smith, Anderson D.;
Lundgren, Per;
Enoksson, Peter

Publication type:

Article

Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D.

Published in:

Physica Status Solidi (B), 2022, v. 259, n. 2, p. 1, doi. 10.1002/pssb.202100215

By:

Mochizuki, Kazuhiro;
Ohta, Hiroshi;
Horikiri, Fumimasa;
Mishima, Tomoyoshi

Publication type:

Article

Works matching IS 03701972 AND DT 2022 AND VI 259 AND IP 2

Quasiperiodic Van der Waals Heterostructures of Graphene and Hexagonal Boron Nitride.

Masthead.

Chemical Functionalization of Ultrathin Tin Layers.

GaAsBi: From Molecular Beam Epitaxy Growth to Devices.

Compound Semiconductors.

Mass Imbalance Effects in the Excitonic Condensation of the Extended Falicov–Kimball Model.

Resistively Detected NMR Lineshapes in a Local Filling ν<1 Quantum Hall Breakdown.

Polymorphism and Faceting in Ga<sub>2</sub>O<sub>3</sub> Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios.

Influence of Noise–Anharmonicity Interplay on a Few Physical Properties of Quantum Dots.

Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga<sub>2</sub>O<sub>3</sub> Grown by the Optical Floating Zone Technique.

Optical Stability of Thick‐Shell CdSe@ZnS/ZnS Quantum Dots Dissolved in n‐Octane in Wide Range of Mass Concentration: Photoluminescence Decay Study.

Intrinsic Planar Defects in Germanium and Their Contribution to the Excess Specific Heat at High Temperatures.

P<sub>4</sub>S<sub>10</sub> Modification for Lithium Metal Anode Surface.

Alloy Engineering of 2D Van der Waals Chromium Mixed Trihalides as Ferromagnetic Semiconductors.

Quasiperiodic Van der Waals Heterostructures of Graphene and Hexagonal Boron Nitride.

Mist Chemical Vapor Deposition Growth of α‐In<sub>2</sub>O<sub>3</sub> Films Using Indium Oxide Powder as Source Precursor.

Alkyl‐Amino Functionalized Reduced‐Graphene‐Oxide–heptadecan‐9‐amine‐Based Spin‐Coated Microsupercapacitors for On‐Chip Low Power Electronics.

Investigation of the Persistence Conductivity and Photoelectric Characteristics in Detectors with Interdigital Electrodes Based on β‐Ga<sub>2</sub>O<sub>3</sub>.

Amorphous p‐Type Conducting Zn–xIr Oxide (x > 0.13) Thin Films Deposited by Reactive Magnetron Cosputtering.

Influence of Morphology‐Controlled Cu<sub>2</sub>ZnSnSe<sub>4</sub> Nanoparticles for Environmental Remediation Process under Visible Light.

Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide.

Smooth Surface Morphology and Long Carrier Lifetime of InGaP Realized by Low‐Temperature‐Grown Cover Layer.

GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications.

Vacuum Ultraviolet Emission Properties of Rocksalt‐Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates.

First‐Principles Calculations on the Elastic, Electronic, and Phononic Properties of Sc<sub>2</sub>Al<sub>2</sub>C<sub>3</sub>.

Polymorphism and Faceting in Ga<sub>2</sub>O<sub>3</sub> Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios.

GaAsBi: From Molecular Beam Epitaxy Growth to Devices.

Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures.

Nitrogen‐Induced Changes in the Electronic and Structural Properties of 4H‐SiC (0001)/SiO<sub>2</sub> Interfaces.

Durable Activated Carbon Electrodes with a Green Binder.

Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D.