Works matching IS 03701972 AND DT 2018 AND VI 255 AND IP 5
Results: 38
Nitride Semiconductors.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870121
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Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018).
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870120
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Masthead.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870119
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Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018).
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870118
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Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700646
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Anisotropic Fracture Toughness of Bulk GaN.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700515
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Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700510
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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700506
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Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700498
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Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700485
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Morphology and Work Function of In, Ag, Mg, and Au Nano‐Islands Grown on AlN(0001) Surface.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700482
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Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700481
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Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700480
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Non‐Polar <italic>a</italic>‐Plane AlN Growth on Nitrided <italic>r</italic>‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700478
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Double‐Polarity Selective‐Area Growth of GaN by Metal‐Organic Vapor‐Phase Epitaxy Using Narrow‐Pitch Patterns.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700475
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Mechanical Properties of Cubic‐BN(111) Bulk Single Crystal Evaluated by Nanoindentation.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700473
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Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700472
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InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700464
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Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700457
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Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700454
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Systematic Theoretical Investigations for Crystal Structure Deformation in Group‐III Nitrides: A First‐Principles Study.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700446
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Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700445
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Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700427
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Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700421
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Effects of Ga Supply on the Growth of (11‐22) AlN on <italic>m</italic>‐Plane (10‐10) Sapphire Substrates.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700418
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The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700406
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Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700399
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A Theoretical Investigation of the Miscibility and Structural Properties of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1−x−y</sub>N Alloys.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700394
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Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700392
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Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700387
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Effect of Insertion of Ultrathin Al<sub>2</sub>O<sub>3</sub> Interlayer at Metal/GaN Interfaces.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700382
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Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700379
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Suppression of Iron Memory Effect in GaN Epitaxial Layers.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700377
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Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al<sub>0.61</sub>Ga<sub>0.39</sub>N Epitaxial Layer.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700374
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Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al<sub>0.64</sub>Ga<sub>0.36</sub>N Double Quantum Wells.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700373
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Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700358
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Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700329
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Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700322
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