Works matching IS 03701972 AND DT 2018 AND VI 255 AND IP 5

Results: 38

Nitride Semiconductors.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870121
By:
- Gil, Bernard;
- Duboz, Jean‐Yves
Publication type:
Article
Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018).
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870120
By:
- Matsumoto, Koji;
- Ono, Toshiaki;
- Honda, Yoshio;
- Yamamoto, Tetsuya;
- Usami, Shigeyoshi;
- Kushimoto, Maki;
- Murakami, Satoshi;
- Amano, Hiroshi
Publication type:
Article
Masthead.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870119
Publication type:
Article
Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018).
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870118
By:
- Janonis, Vytautas;
- Jakštas, Vytautas;
- Kašalynas, Irmantas;
- Prystawko, Pawel;
- Kruszewski, Piotr
Publication type:
Article
Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700646
By:
- Yakimov, Eugene B.;
- Polyakov, Alexander Y.;
- Vergeles, Pavel S.
Publication type:
Article
Anisotropic Fracture Toughness of Bulk GaN.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700515
By:
- Cheng, Yutian;
- Cai, Duanjun;
- Wang, Hui;
- Wu, Jiejun;
- Liu, Xiangshun;
- Zhang, Guoyi;
- Yu, Tongjun
Publication type:
Article
Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700510
By:
- Rettig, Oliver;
- Scholz, Jan‐Patrick;
- Steiger, Natja;
- Bauer, Sebastian;
- Hubáček, Tomáš;
- Zíková, Markéta;
- Li, Yueliang;
- Qi, Haoyuan;
- Biskupek, Johannes;
- Kaiser, Ute;
- Thonke, Klaus;
- Scholz, Ferdinand
Publication type:
Article
Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700506
By:
- Hakamata, Junya;
- Kawase, Yuta;
- Dong, Lin;
- Iwayama, Sho;
- Iwaya, Motoaki;
- Takeuchi, Tetsuya;
- Kamiyama, Satoshi;
- Miyake, Hideto;
- Akasaki, Isamu
Publication type:
Article
Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700498
By:
- Janonis, Vytautas;
- Jakštas, Vytautas;
- Kašalynas, Irmantas;
- Prystawko, Pawel;
- Kruszewski, Piotr
Publication type:
Article
Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700485
By:
- Blumberg, Christian;
- Grosse, Simon;
- Weimann, Nils;
- Tegude, Franz‐Josef;
- Prost, Werner
Publication type:
Article
Morphology and Work Function of In, Ag, Mg, and Au Nano‐Islands Grown on AlN(0001) Surface.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700482
By:
- Khoussa, Hassan;
- Baris, Bulent;
- Alchaar, Mohanad;
- Chaumeton, Florian;
- Ghamnia, Mostefa;
- Gauthier, Sébastien;
- Martrou, David
Publication type:
Article
Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700481
By:
- Oto, Takao;
- Mizuno, Yutaro;
- Yoshida, Jun;
- Yanagihara, Ai;
- Miyagawa, Rin;
- Ema, Kazuhiro;
- Kishino, Katsumi
Publication type:
Article
Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700480
By:
- Shiojima, Kenji;
- Hashizume, Takanori;
- Horikiri, Fumimasa;
- Tanaka, Takeshi;
- Mishma, Tomoyoshi
Publication type:
Article
Non‐Polar <italic>a</italic>‐Plane AlN Growth on Nitrided <italic>r</italic>‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700478
By:
- Adachi, Masayoshi;
- Fukuyama, Hiroyuki
Publication type:
Article
Double‐Polarity Selective‐Area Growth of GaN by Metal‐Organic Vapor‐Phase Epitaxy Using Narrow‐Pitch Patterns.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700475
By:
- Yagi, Hirotaka;
- Osumi, Noriyuki;
- Inoue, Yoku;
- Nakano, Takayuki
Publication type:
Article
Mechanical Properties of Cubic‐BN(111) Bulk Single Crystal Evaluated by Nanoindentation.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700473
By:
- Deura, Momoko;
- Kutsukake, Kentaro;
- Ohno, Yutaka;
- Yonenaga, Ichiro;
- Taniguchi, Takashi
Publication type:
Article
Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700472
By:
- Zubialevich, Vitaly Z.;
- Pampili, Pietro;
- Parbrook, Peter J.
Publication type:
Article
InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700464
By:
- Hospodková, Alice;
- Hubáček, Tomáš;
- Oswald, Jiří;
- Pangrác, Jiří;
- Kuldová, Karla;
- Hývl, Matěj;
- Dominec, Filip;
- Ledoux, Gilles;
- Dujardin, Christophe
Publication type:
Article
Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700457
By:
- Blumenthal, Sarah;
- Reuter, Dirk;
- As, Donat J.
Publication type:
Article
Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700454
By:
- Takamiya, Kengo;
- Yagi, Shuhei;
- Yaguchi, Hiroyuki;
- Akiyama, Hidefumi;
- Shojiki, Kanako;
- Tanikawa, Tomoyuki;
- Katayama, Ryuji
Publication type:
Article
Systematic Theoretical Investigations for Crystal Structure Deformation in Group‐III Nitrides: A First‐Principles Study.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700446
By:
- Tsuboi, Yuma;
- Akiyama, Toru;
- Nakamura, Kohji;
- Ito, Tomonori
Publication type:
Article
Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700445
By:
- Coulon, Pierre‐Marie;
- Kusch, Gunnar;
- Le Boulbar, Emmanuel D.;
- Chausse, Pierre;
- Bryce, Christopher;
- Martin, Robert W.;
- Shields, Philip A.
Publication type:
Article
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700427
By:
- Minj, Albert;
- Ammar, Hichem Ben;
- Cros, Ana;
- Garro, Nuria;
- Gamarra, Piero;
- Delage, Sylvain L.;
- Ruterana, Pierre
Publication type:
Article
Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700421
By:
- Grigelionis, Ignas;
- Jakštas, Vytautas;
- Janonis, Vytautas;
- Kašalynas, Irmantas;
- Prystawko, Pawel;
- Kruszewski, Piotr;
- Leszczyński, Michal
Publication type:
Article
Effects of Ga Supply on the Growth of (11‐22) AlN on <italic>m</italic>‐Plane (10‐10) Sapphire Substrates.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700418
By:
- Jo, Masafumi;
- Hirayama, Hideki
Publication type:
Article
The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700406
By:
- Charles, Matthew;
- Baines, Yannick;
- Bouis, Renan;
- Papon, Anne‐Marie
Publication type:
Article
Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700399
By:
- Hossain, Tasnia;
- Rashid, Mohammad Junaebur;
- Frayssinet, Eric;
- Baron, Nicolas;
- Damilano, Benjamin;
- Semond, Fabrice;
- Wang, J.;
- Durand, Lise;
- Ponchet, Anne;
- Demangeot, Francois;
- Cordier, Yvon
Publication type:
Article
A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700394
By:
- Mohamad, Ranim;
- Béré, Antoine;
- Hounkpati, Viwanou;
- Gamarra, Piero;
- Chen, Jun;
- Ruterana, Pierre
Publication type:
Article
Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700392
By:
- Damilano, Benjamin;
- Vézian, Stéphane;
- Massies, Jean
Publication type:
Article
Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700387
By:
- Matsumoto, Koji;
- Ono, Toshiaki;
- Honda, Yoshio;
- Yamamoto, Tetsuya;
- Usami, Shigeyoshi;
- Kushimoto, Maki;
- Murakami, Satoshi;
- Amano, Hiroshi
Publication type:
Article
Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700382
By:
- Akazawa, Masamichi;
- Hasezaki, Taito
Publication type:
Article
Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700379
By:
- Kataoka, Keita;
- Narita, Tetsuo;
- Iguchi, Hiroko;
- Uesugi, Tsutomu;
- Kachi, Tetsu
Publication type:
Article
Suppression of Iron Memory Effect in GaN Epitaxial Layers.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700377
By:
- Leone, Stefano;
- Benkhelifa, Fouad;
- Kirste, Lutz;
- Manz, Christian;
- Mueller, Stefan;
- Quay, Ruediger;
- Stadelmann, Tim
Publication type:
Article
Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700374
By:
- Murotani, Hideaki;
- Ikeda, Kazuki;
- Tsurumaru, Takuto;
- Fujiwara, Ryota;
- Kurai, Satoshi;
- Miyake, Hideto;
- Hiramatsu, Kazumasa;
- Yamada, Yoichi
Publication type:
Article
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700373
By:
- Wecker, Tobias;
- Callsen, Gordon;
- Hoffmann, Axel;
- Reuter, Dirk;
- As, Donat J.
Publication type:
Article
Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700358
By:
- Kurai, Satoshi;
- Higaki, Shota;
- Imura, Nobuto;
- Okawa, Kohei;
- Makio, Ryoga;
- Okada, Narihito;
- Tadatomo, Kazuyuki;
- Yamada, Yoichi
Publication type:
Article
Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700329
By:
- Akiyama, Toru;
- Nakane, Harunobu;
- Uchino, Motoshi;
- Nakamura, Kohji;
- Ito, Tomonori
Publication type:
Article
Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700322
By:
- Kurai, Satoshi;
- Mihara, Renma;
- Nobata, Genki;
- Okawa, Kohei;
- Okada, Narihito;
- Tadatomo, Kazuyuki;
- Yano, Yoshiki;
- Tabuchi, Toshiya;
- Matsumoto, Koh;
- Yamada, Yoichi
Publication type:
Article

Works matching IS 03701972 AND DT 2018 AND VI 255 AND IP 5

Nitride Semiconductors.

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018).

Masthead.

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018).

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.

Anisotropic Fracture Toughness of Bulk GaN.

Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE.

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates.

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).

Morphology and Work Function of In, Ag, Mg, and Au Nano‐Islands Grown on AlN(0001) Surface.

Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.

Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.

Non‐Polar <italic>a</italic>‐Plane AlN Growth on Nitrided <italic>r</italic>‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy.

Double‐Polarity Selective‐Area Growth of GaN by Metal‐Organic Vapor‐Phase Epitaxy Using Narrow‐Pitch Patterns.

Mechanical Properties of Cubic‐BN(111) Bulk Single Crystal Evaluated by Nanoindentation.

Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor.

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties.

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells.

Systematic Theoretical Investigations for Crystal Structure Deformation in Group‐III Nitrides: A First‐Principles Study.

Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs.

Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy.

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K.

Effects of Ga Supply on the Growth of (11‐22) AlN on <italic>m</italic>‐Plane (10‐10) Sapphire Substrates.

The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon.

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate.

A Theoretical Investigation of the Miscibility and Structural Properties of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1−x−y</sub>N Alloys.

Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate.

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.

Effect of Insertion of Ultrathin Al<sub>2</sub>O<sub>3</sub> Interlayer at Metal/GaN Interfaces.

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN.

Suppression of Iron Memory Effect in GaN Epitaxial Layers.

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al<sub>0.61</sub>Ga<sub>0.39</sub>N Epitaxial Layer.

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al<sub>0.64</sub>Ga<sub>0.36</sub>N Double Quantum Wells.

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements.

Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies.

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy.