Works matching IS 03701972 AND DT 2016 AND VI 253 AND IP 1
Results: 31
Green emission from semipolar InGaN quantum wells grown on low-defect (.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 105, doi. 10.1002/pssb.201552298
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- Publication type:
- Article
Doping behavior of.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 164, doi. 10.1002/pssb.201552241
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- Publication type:
- Article
Semipolar GaN-based heterostructures on foreign substrates (Phys. Status Solidi B 1/2016).
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 1, doi. 10.1002/pssb.201670501
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- Publication type:
- Article
Issue Information.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 2, doi. 10.1002/pssb.201670502
- Publication type:
- Article
Complete orientational access for semipolar GaN devices on sapphire (Phys. Status Solidi B 1/2016).
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 188, doi. 10.1002/pssb.201670503
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- Article
pss - taking legacy to the future.
- Published in:
- 2016
- Publication type:
- Editorial
Contents.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 5, doi. 10.1002/pssb.201670505
- Publication type:
- Article
Recent and forthcoming publications in pss.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 9, doi. 10.1002/pssb.201670506
- Publication type:
- Article
Polarization-field control in nitride light emitters.
- Published in:
- 2016
- Publication type:
- Other
Semipolar GaN-based heterostructures on foreign substrates.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 13, doi. 10.1002/pssb.201552386
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- Publication type:
- Article
Optimizing GaN (.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 61, doi. 10.1002/pssb.201552263
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- Publication type:
- Article
Polar and semipolar (11.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 99, doi. 10.1002/pssb.201552264
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- Publication type:
- Article
Growth and coalescence studies of.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 46, doi. 10.1002/pssb.201552266
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- Publication type:
- Article
Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 73, doi. 10.1002/pssb.201552451
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- Publication type:
- Article
InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 78, doi. 10.1002/pssb.201552336
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- Publication type:
- Article
Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 169, doi. 10.1002/pssb.201552407
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- Publication type:
- Article
EBIC investigations on polar and semipolar InGaN LED structures.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 126, doi. 10.1002/pssb.201552284
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- Publication type:
- Article
Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 140, doi. 10.1002/pssb.201552288
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- Publication type:
- Article
Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 112, doi. 10.1002/pssb.201552474
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- Publication type:
- Article
Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 133, doi. 10.1002/pssb.201552353
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- Publication type:
- Article
Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 84, doi. 10.1002/pssb.201552354
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- Publication type:
- Article
Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 67, doi. 10.1002/pssb.201552427
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- Publication type:
- Article
Complete orientational access for semipolar GaN devices on sapphire.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 23, doi. 10.1002/pssb.201552301
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- Publication type:
- Article
Internal quantum efficiency and carrier injection efficiency of c-plane,.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 174, doi. 10.1002/pssb.201552187
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- Publication type:
- Article
Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 118, doi. 10.1002/pssb.201552448
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- Publication type:
- Article
Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 36, doi. 10.1002/pssb.201552271
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- Publication type:
- Article
MOVPE growth and indium incorporation of polar, semipolar (11.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 93, doi. 10.1002/pssb.201552274
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- Publication type:
- Article
Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 158, doi. 10.1002/pssb.201552276
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- Publication type:
- Article
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 180, doi. 10.1002/pssb.201552277
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- Publication type:
- Article
Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 54, doi. 10.1002/pssb.201552467
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- Publication type:
- Article
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 145, doi. 10.1002/pssb.201552419
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- Publication type:
- Article