Works matching IS 03701972 AND DT 2017 AND VI 254 AND IP 8

Results: 47

Vapor-liquid-solid synthesis of ZnSnN2.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600718

By:

Quayle, Paul C.;
Junno, Grant T.;
He, Keliang;
Blanton, Eric W.;
Shan, Jie;
Kash, Kathleen

Publication type:

Article

Measurement of the properties of GaN layers using terahertz time-domain spectroscopic ellipsometry.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600767

By:

Tachi, Kohei;
Asagami, Shiho;
Fujii, Takashi;
Araki, Tsutomu;
Nanishi, Yasushi;
Nagashima, Takeshi;
Iwamoto, Toshiyuki;
Sato, Yukinori;
Morita, Naotake;
Sugie, Ryuichi;
Kamiyama, Satoshi

Publication type:

Article

Structural and electronic properties of wurtzite B xAl1- xN from first-principles calculations.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600749

By:

Zhang, Muwei;
Li, Xiaohang

Publication type:

Article

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600699

By:

Li, Xiaohang;
Wang, Shuo;
Liu, Hanxiao;
Ponce, Fernando A.;
Detchprohm, Theeradetch;
Dupuis, Russell D.

Publication type:

Article

Light emitting mechanisms in Si-rich SiNx films with different silicon nitride stoichiometry.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600670

By:

Torchynska, Tetyana;
Vergara Hernandez, Erasto;
Khomenkova, Larysa;
Slaoui, Abdelilah

Publication type:

Article

Development of GaN substrate with a large diameter and small orientation deviation.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600671

By:

Yoshida, Takehiro;
Imanishi, Masayuki;
Kitamura, Toshio;
Otaka, Kenji;
Imade, Mamoru;
Shibata, Masatomo;
Mori, Yusuke

Publication type:

Article

Avoidance of instable photoluminescence intensity from AlGaN bulk layers.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600672

By:

Netzel, Carsten;
Jeschke, Jörg;
Knauer, Arne;
Weyers, Markus

Publication type:

Article

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600675

By:

Kanta Patra, Saroj;
Wang, Tong;
Puchtler, Tim J.;
Zhu, Tongtong;
Oliver, Rachel A.;
Taylor, Robert A.;
Schulz, Stefan

Publication type:

Article

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600679

By:

Iso, Kenji;
Matsuda, Karen;
Takekawa, Nao;
Murakami, Hisashi;
Koukitu, Akinori

Publication type:

Article

Properties of GaN nanowires with Sc xGa1 −xN insertion.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600740

By:

Bao, A.;
Goff, L. E.;
Zhu, T.;
Sahonta, S.‐L.;
Ritchie, D. A.;
Joyce, H. J.;
Moram, M. A.;
Oliver, R. A.

Publication type:

Article

Investigation of water splitting using III-N structures.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600744

By:

Usikov, Alexander;
Ermakov, Ivan;
Helava, Heikki;
Kurin, Sergey;
Nikiforov, Alexey;
Papchenko, Boris;
Puzyk, Mike;
Polyakov, Alexander;
Lee, In‐Hwan;
Makarov, Yuri

Publication type:

Article

Enhancement of optical gain by controlling waveguide modes in semipolar InGaN quantum well laser diodes.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600746

By:

Sakai, Shigeta;
Matsuura, Keigo;
Yamaguchi, Atsushi A.

Publication type:

Article

Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600691

By:

Akazawa, Masamichi;
Seino, Atsushi

Publication type:

Article

Influence of AlN buffer layer on growth of AlGaN by HVPE.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600696

By:

Fleischmann, Simon;
Richter, Eberhard;
Mogilatenko, Anna;
Weyers, Markus;
Tränkle, Günther

Publication type:

Article

Effects of atomic arrangements on electronic structures of threading dislocations in III-nitride alloy semiconductors: A first-principles study.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600694

By:

Akiyama, Toru;
Sakaguchi, Ryohei;
Nakamura, Kohji;
Ito, Tomonori

Publication type:

Article

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600710

By:

Staszczak, G.;
Gorczyca, I.;
Grzanka, E.;
Smalc‐Koziorowska, J.;
Targowski, G.;
Czernecki, R.;
Siekacz, M.;
Grzanka, S.;
Skierbiszewski, C.;
Schulz, T.;
Christensen, N. E.;
Suski, T.

Publication type:

Article

Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600714

By:

Lamprecht, M.;
Jmerik, V. N.;
Collazo, R.;
Sitar, Z.;
Ivanov, S. V.;
Thonke, K.

Publication type:

Article

Visualization of dislocation behavior in HVPE-grown GaN using facet controlling techniques.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600716

By:

Matsubara, Tohoru;
Goubara, Shin;
Yukizane, Kota;
Inomoto, Ryo;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600664

By:

Massabuau, Fabien;
Piot, Nicolas;
Frentrup, Martin;
Wang, Xiuze;
Avenas, Quentin;
Kappers, Menno;
Humphreys, Colin;
Oliver, Rachel

Publication type:

Article

Microstructure and thermal stability of rf-plasma-nitridated α-(AlGa)2O3 grown by mist CVD.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600768

By:

Buma, A.;
Masuda, N.;
Araki, T.;
Nanishi, Y.;
Oda, M.;
Hitora, T.

Publication type:

Article

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600666

By:

Massabuau, Fabien;
Kappers, Menno;
Humphreys, Colin;
Oliver, Rachel

Publication type:

Article

Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600711

By:

Pristovsek, Markus;
Bellman, Konrad;
Mehnke, Frank;
Stellmach, Joachim;
Wernicke, Tim;
Kneissl, Michael

Publication type:

Article

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600713

By:

Slomski, Michael;
Paskov, Plamen P.;
Leach, Jacob H.;
Muth, John F.;
Paskova, Tania

Publication type:

Article

Origin of high hole concentrations in Mg-doped GaN films.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600668

By:

Fischer, A. M.;
Wang, S.;
Ponce, F. A.;
Gunning, B. P.;
Fabien, C. A. M.;
Doolittle, W. A.

Publication type:

Article

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600715

By:

Godejohann, Birte‐Julia;
Ture, Erdin;
Müller, Stefan;
Prescher, Mario;
Kirste, Lutz;
Aidam, Rolf;
Polyakov, Vladimir;
Brückner, Peter;
Breuer, Steffen;
Köhler, Klaus;
Quay, Rüdiger;
Ambacher, Oliver

Publication type:

Article

Growth of 10 nm-thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600731

By:

Kim, Jeong‐Gil;
Im, Ki‐Sik;
Won, Chul‐Ho;
Kang, Seung‐Hyeon;
Lee, Sang‐Heung;
Lim, Jong‐Won;
Kim, Ji Heon;
Lee, Jung‐Hee

Publication type:

Article

Photoluminescence studies of cubic GaN epilayers.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600733

By:

Church, S. A.;
Hammersley, S.;
Mitchell, P. W.;
Kappers, M. J.;
Sahonta, S. L.;
Frentrup, M.;
Nilsson, D.;
Ward, P. J.;
Shaw, L. J.;
Wallis, D. J.;
Humphreys, C. J.;
Oliver, R. A.;
Binks, D. J.;
Dawson, P.

Publication type:

Article

Control of impurity concentration in N-polar (.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600751

By:

Tanikawa, Tomoyuki;
Kuboya, Shigeyuki;
Matsuoka, Takashi

Publication type:

Article

Incorporation of germanium for n-type doping of cubic GaN.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600700

By:

Deppe, Michael;
Gerlach, Jürgen W.;
Reuter, Dirk;
As, Donat J.

Publication type:

Article

Comparison of wurtzite GaN/AlN and ZnO/MgO short-period superlattices: Calculation of band gaps and built-in electric field.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600704

By:

Gorczyca, I.;
Teisseyre, H.;
Suski, T.;
Christensen, N. E.

Publication type:

Article

Intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures in self-assembled nanowire and 2D layers.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600734

By:

Ajay, Akhil;
Lim, Caroline B.;
Browne, David A.;
Polaczynski, Jakub;
Bellet‐Amalric, Edith;
den Hertog, Martien I.;
Monroy, Eva

Publication type:

Article

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600737

By:

Nagamatsu, Kentaro;
Nitta, Shugo;
Ye, Zheng;
Nagao, Hirofumi;
Miki, Shinichi;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article

First-principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600706

By:

Kawamura, Takahiro;
Kitamoto, Akira;
Imade, Mamoru;
Yoshimura, Masashi;
Mori, Yusuke;
Morikawa, Yoshitada;
Kangawa, Yoshihiro;
Kakimoto, Koichi

Publication type:

Article

Simulations of dislocation core in pyramidal plane of n- and p-doped wurtzite GaN and AlGaN.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600736

By:

Batyrev, Iskander G.;
Weingarten, N. Scott;
Jones, Kenneth A.

Publication type:

Article

Birefringence in GaN epitaxial layers and GaN microrods.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600738

By:

Trenkmann, Ines;
Uhlig, Lukas;
Wachs, Matthias;
Mounir, Christian;
Schwarz, Ulrich T.

Publication type:

Article

Interface characterization of atomic layer deposited Al2O3 on m-plane GaN.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600681

By:

Jia, Ye;
Wallace, Joshua S.;
Echeverria, Elena;
Gardella, Joseph A.;
Singisetti, Uttam

Publication type:

Article

Properties of C-doped GaN.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600708

By:

Lesnik, Andreas;
Hoffmann, Marc P.;
Fariza, Aqdas;
Bläsing, Jürgen;
Witte, Hartmut;
Veit, Peter;
Hörich, Florian;
Berger, Christoph;
Hennig, Jonas;
Dadgar, Armin;
Strittmatter, André

Publication type:

Article

Issue Information.

Published in:: Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201770242
Publication type:: Article

Visualization of dislocation behavior in HVPE-grown GaN using facet controlling techniques (Phys. Status Solidi B 8/2017).

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201770243

By:

Matsubara, Tohoru;
Goubara, Shin;
Yukizane, Kota;
Inomoto, Ryo;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Contents.

Published in:: Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201770244
Publication type:: Article

Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600722

By:

Bae, Si‐Young;
Lekhal, Kaddour;
Lee, Ho‐Jun;
Min, Jung‐Wook;
Lee, Dong‐Seon;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article

Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching (Phys. Status Solidi B 8/2017).

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201770241

By:

Youtsey, Chris;
McCarthy, Robert;
Reddy, Rekha;
Forghani, Kamran;
Xie, Andy;
Beam, Ed;
Wang, Jingshan;
Fay, Patrick;
Ciarkowski, Timothy;
Carlson, Eric;
Guido, Louis

Publication type:

Article

Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600774

By:

Youtsey, Chris;
McCarthy, Robert;
Reddy, Rekha;
Forghani, Kamran;
Xie, Andy;
Beam, Ed;
Wang, Jingshan;
Fay, Patrick;
Ciarkowski, Timothy;
Carlson, Eric;
Guido, Louis

Publication type:

Article

Nitride Semiconductors.

Published in:: 2017
Publication type:: Other

Annealing of the sputtered AlN buffer layer on r-plane sapphire and its effect on a-plane GaN crystalline quality.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600723

By:

Jinno, Daiki;
Otsuki, Shunya;
Niimi, Teruyuki;
Sugimori, Shogo;
Daicho, Hisayoshi;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Akasaki, Isamu

Publication type:

Article

High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600724

By:

Wang, Tong;
Puchtler, Tim J.;
Zhu, Tongtong;
Jarman, John C.;
Oliver, Rachel A.;
Taylor, Robert A.

Publication type:

Article

Information for authors.

Published in:: Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201770246
Publication type:: Article