Works matching DE "TWO-dimensional electron gas"

Results: 436

Effect of Acceptor-Type Traps in GaN Buffer Layer on Current Collapse of ε-Ga2O3/GaN HEMTs: Effect of Acceptor-Type Traps in GaN Buffer Layer on Current Collapse of ε-Ga2O3/GaN HEMTs: A. Qu et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 4, p. 3086, doi. 10.1007/s11664-025-11823-9

By:

Qu, Andeng;
Xie, Zhigao;
Wang, Yan;
Hu, Guofeng;
Tan, Chee-Keong

Publication type:

Article

Impact of Gate Angle Variations on DC and RF Performance of Enhancement-Mode Al0.15Ga0.85N/GaN/Al0.07Ga0.93N MIS-HEMT Device: Impact of Gate Angle Variations on DC and RF Performance...: L. Lino et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2447, doi. 10.1007/s11664-024-11726-1

By:

Lino, L.;
Saravana Kumar, R.;
Leeban Moses, M.;
Mohanbabu, A.

Publication type:

Article

The Influence of AlGaN Spacer Thickness on the Electrical Properties of InAlN/AlGaN/AlN/GaN Heterostructure: The Influence of AlGaN Spacer Thickness on the Electrical Properties of InAlN/AlGaN/AlN/GaN...: J. Xu et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2315, doi. 10.1007/s11664-024-11620-w

By:

Xu, Jiankai;
Jiang, Lijuan;
Feng, Chun;
Xiao, Hongling

Publication type:

Article

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5555, doi. 10.1007/s11664-024-11289-1

By:

Lino, L.;
Saravana Kumar, R.;
Mohanbabu, A.;
Murugapandiyan, P.

Publication type:

Article

Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3926, doi. 10.1007/s11664-024-11156-z

By:

Wang, Yuhao;
Huang, Sen;
Jiang, Qimeng;
Wang, Xinhua;
Guo, Fuqiang;
Feng, Chao;
Fan, Jie;
Yin, Haibo;
Gao, Xinguo;
Wei, Ke;
Zheng, Yingkui;
Liu, Xinyu

Publication type:

Article

High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3415, doi. 10.1007/s11664-024-11074-0

By:

Das, Partha

Publication type:

Article

Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2477, doi. 10.1007/s11664-024-10940-1

By:

Soma, Umamaheshwar

Publication type:

Article

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 9, p. 9061, doi. 10.1007/s10854-016-4939-x

By:

Yang, Fan;
He, Liang;
Zheng, Yue;
Li, Liuan;
Chen, Zijun;
Zhou, Deqiu;
He, Zhiyuan;
Yao, Yao;
Ni, Yiqiang;
Shen, Zhen;
Zhang, Xiaorong;
He, Lei;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4

By:

Yang, Fan;
Yao, Yao;
He, Zhiyuan;
Zhou, Guilin;
Zheng, Yue;
He, Liang;
Zhang, Jincheng;
Ni, Yiqiang;
Zhou, Deqiu;
Shen, Zhen;
Zhong, Jian;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Stabilization of spin skyrmions in magnetic materials and a two-dimensional electron gas.

Published in:

Inorganic Materials, 2013, v. 49, n. 12, p. 1199, doi. 10.1134/S002016851312008X

By:

Kalinkin, A.;
Skorikov, V.;
Kozhbakhteev, E.;
Polyakov, A.;
Kuznetsova, S.

Publication type:

Article

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201184

By:

Guo, Min;
Ou, Hai;
Xie, Dongyu;
Zhu, Qiaoji;
Wang, Mengye;
Liang, Lingyan;
Liu, Fengjuan;
Ning, Ce;
Cao, Hongtao;
Yuan, Guangcai;
Lu, Xubing;
Liu, Chuan

Publication type:

Article

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201007

By:

He, Bo;
He, Gang;
Jiang, Shanshan;
Liu, Jiangwei;
Fortunato, Elvira;
Martins, Rodrigo

Publication type:

Article

Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200800

By:

Li, Yang;
Wang, Wei;
Zhang, Di;
Baskin, Maria;
Chen, Aiping;
Kvatinsky, Shahar;
Yalon, Eilam;
Kornblum, Lior

Publication type:

Article

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200807

By:

Wang, Pengfei;
Yang, Huan;
Li, Jiye;
Zhang, Xiaohui;
Wang, Lei;
Xiao, Juncheng;
Zhao, Bin;
Zhang, Shengdong;
Lu, Lei

Publication type:

Article

Elastic and Inelastic Spin Transport in SrTiO3‐based Magnetic Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200232

By:

Soya, Nozomi;
Katase, Takayoshi;
Ando, Kazuya

Publication type:

Article

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406

By:

Yang, Jeong Yong;
Yeom, Min Jae;
Lee, Jaeyong;
Lee, Kyusang;
Park, Changkun;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100652

By:

Zhang, Yi‐Yu;
An, Shu;
Zheng, Yixiong;
Lai, Junyu;
Seo, Jung‐Hun;
Lee, Kwang Hong;
Kim, Munho

Publication type:

Article

Engineering of Electron Confinement through Defect‐Based Localized Polarization on SrTiO3 Surface.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000968

By:

Chen, Junyan;
Liu, Wei;
Eul, Tobias;
Chen, Mingjing;
Hu, Xiaoyong;
Wang, Shufang;
Jiang, Anquan;
Yang, Hong;
Aeschlimann, Martin;
Gong, Qihuang

Publication type:

Article

Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000876

By:

Lee, Hyun Jae;
Moon, Taehwan;
Hyun, Seung Dam;
Kang, Sukin;
Hwang, Cheol Seong

Publication type:

Article

2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (Adv. Electron. Mater. 6/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286

By:

Moon, Taehwan;
Lee, Hyun Jae;
Hyun, Seung Dam;
Kim, Baek Su;
Kim, Ho Hyun;
Hwang, Cheol Seong

Publication type:

Article

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286

By:

Moon, Taehwan;
Lee, Hyun Jae;
Hyun, Seung Dam;
Kim, Baek Su;
Kim, Ho Hyun;
Hwang, Cheol Seong

Publication type:

Article

Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000068

By:

Ji, Fan;
Sharma, Pankaj;
Xin, Tongzheng;
Zhang, Dawei;
Liu, Ying;
Niu, Ranming;
Cairney, Julie M.;
Seidel, Jan

Publication type:

Article

Solution Processed AlInO/In2O3 Heterostructure Channel Thin Film Transistor with Enhanced Performance.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900550

By:

Liu, Ling;
Chen, Shujian;
Liang, Xiaoci;
Pei, Yanli

Publication type:

Article

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy.

Published in:

Photonics, 2023, v. 10, n. 7, p. 800, doi. 10.3390/photonics10070800

By:

Khan, Sahanowaj;
Acharyya, Aritra;
Inokawa, Hiroshi;
Satoh, Hiroaki;
Biswas, Arindam;
Dhar, Rudra Sankar;
Banerjee, Amit;
Seteikin, Alexey Y.

Publication type:

Article

SrTiO3 termination control: a method to tailor the oxygen exchange kinetics.

Published in:

2020

By:

Hensling, Felix V. E.;
Baeumer, Christoph;
Rose, Marc-André;
Gunkel, Felix;
Dittmann, Regina

Publication type:

Report

Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800551

By:

Zhang, Le;
Shu, Tianyu;
Wu, Huizhen;
Ye, Zhizhen;
Zhu, Liping

Publication type:

Article

Spin to Charge Conversion at the Conducting TiO2 Surface.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 9, p. n/a, doi. 10.1002/pssr.201700149

By:

Wang, Qiuru;
Zhang, Wenxu;
Peng, Bin;
Zeng, Huizhong;
Zhang, Wanli

Publication type:

Article

Band alignment at band-insulator/Mott-insulator interfaces.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 6, p. 577, doi. 10.1002/pssr.201409088

By:

Janotti, A.;
Bjaalie, L.;
Himmetoglu, B.;
Van de Walle, C. G.

Publication type:

Article

Electrical and magnetic properties of ohmic contacts of the quantum hall resistance devices.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 23, p. N.PAG, doi. 10.1142/S0217984920502383

By:

Zhong, Qing;
Wang, Xueshen;
Li, Jinjin;
Zhong, Yuan

Publication type:

Article

Understanding the role of exchange and correlations in complex oxides under strain and oxide heterostructures.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 23, p. N.PAG, doi. 10.1142/S0217984920300069

By:

Banerjee, Hrishit

Publication type:

Article

Can fractional quantum Hall effect be due to the formation of coherent wave structures in a 2D electron gas?

Published in:

Modern Physics Letters B, 2016, v. 30, n. 13, p. -1, doi. 10.1142/S0217984916501426

By:

Mirza, Babur M.

Publication type:

Article

Dedução da Matriz do Hamiltoniano Tight Binding usando a discretização da Equação de Schrödinger.

Published in:

Caderno Brasileiro de Ensino de Física, 2020, v. 42, p. 1, doi. 10.1590/1806-9126-RBEF-2020-0217

By:

Costa, Rodrigo M.;
Mendoza, Michel

Publication type:

Article

Magnetism and Conductivity Along Structural Domain Walls of SrTiO3.

Published in:

Journal of Superconductivity & Novel Magnetism, 2020, v. 33, n. 1, p. 195, doi. 10.1007/s10948-019-05301-7

By:

Frenkel, Yiftach;
Xie, Yanwu;
Hwang, Harold Y.;
Kalisky, Beena

Publication type:

Article

Electronic Reconstructions in the Transition Metal–Free Heterostructures: LaAlO3/SrGeO3.

Published in:

Journal of Superconductivity & Novel Magnetism, 2020, v. 33, n. 1, p. 275, doi. 10.1007/s10948-019-05303-5

By:

Li, Meiyu;
Gu, Xiao

Publication type:

Article

Temperature Dependence of Renormalized Spin Susceptibility for Interacting 2D Electrons in Silicon.

Published in:

Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 3, p. 723, doi. 10.1007/s10948-017-4329-5

By:

Pudalov, V. M.;
Gershenson, M. E.

Publication type:

Article

The Influence of Electron-Phonon Coupling and Lattice Vibrations on the Rashba Coupling Induced Domain Wall Spin Current and Spin Torque.

Published in:

Journal of Superconductivity & Novel Magnetism, 2014, v. 27, n. 2, p. 427, doi. 10.1007/s10948-013-2279-0

By:

Phirouznia, A.;
Khadem-Maaref, M.

Publication type:

Article

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 3, p. 1, doi. 10.1007/s11082-021-02786-2

By:

Huang, Yi;
Li, Jinpeng;
Chen, Weizhong;
Wang, Jin;
Xue, Junjun;
Cai, Qing;
Chen, Dunjun;
Zhang, Rong

Publication type:

Article

The magnetic field effect on the coherence time of qubit in RbCl crystal quantum pseudodot.

Published in:

Optical & Quantum Electronics, 2019, v. 51, n. 4, p. N.PAG, doi. 10.1007/s11082-019-1829-5

By:

Sun, Yong;
Xiao, Jing-Lin

Publication type:

Article

Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models.

Published in:

Photonics, 2020, v. 7, n. 1, p. 2, doi. 10.3390/photonics7010002

By:

Ciano, Chiara;
Virgilio, Michele;
Bagolini, Luigi;
Baldassarre, Leonetta;
Rossetti, Andrea;
Pashkin, Alexej;
Helm, Manfred;
Montanari, Michele;
Persichetti, Luca;
Di Gaspare, Luciana;
Capellini, Giovanni;
Paul, Douglas J.;
Scalari, Giacomo;
Faist, Jèrome;
De Seta, Monica;
Ortolani, Michele

Publication type:

Article

Quantum Theory of Multisubband Plasmon– Phonon Coupling.

Published in:

Photonics, 2020, v. 7, n. 1, p. 19, doi. 10.3390/photonics7010019

By:

Ribeiro, Sofia;
Vasanelli, Angela;
Todorov, Yanko;
Sirtori, Carlo

Publication type:

Article

Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-13121-4

By:

Lee, Sunwoo;
Jeon, Jaeyoung;
Eom, Kitae;
Jeong, Chaehwa;
Yang, Yongsoo;
Park, Ji-Yong;
Eom, Chang-Beom;
Lee, Hyungwoo

Publication type:

Article

Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO3/SrTiO3 heterointerface electron system.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-10425-3

By:

Kwak, Yongsu;
Han, Woojoo;
Lee, Joon Sung;
Song, Jonghyun;
Kim, Jinhee

Publication type:

Article

The temperature dependence on the coherence time of a quantum pseudodot qubit.

Published in:

International Journal of Quantum Information, 2023, v. 21, n. 1, p. 1, doi. 10.1142/S021974992350003X

By:

Qiu, Wei;
Miao, Xiu-Juan;
Han, Shuang;
Zhang, Wei;
Ma, Xin-Jun;
Sun, Yong;
Xiao, Jing-Lin

Publication type:

Article

Resonant and anti‐resonant modes of the dilute, spin‐inbalanced, two‐dimensional electron liquid including correlations.

Published in:

Contributions to Plasma Physics, 2018, v. 58, n. 2/3, p. 179, doi. 10.1002/ctpp.201700147

By:

Kreil, Dominik;
Staudinger, Clemens;
Astleithner, Katharina;
Böhm, Helga M.

Publication type:

Article

Superfluid stiffness of a KTaO3-based two-dimensional electron gas.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-32242-y

By:

Mallik, S.;
Ménard, G. C.;
Saïz, G.;
Witt, H.;
Lesueur, J.;
Gloter, A.;
Benfatto, L.;
Bibes, M.;
Bergeal, N.

Publication type:

Article

Competing electronic states emerging on polar surfaces.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-31953-6

By:

Reticcioli, Michele;
Wang, Zhichang;
Schmid, Michael;
Wrana, Dominik;
Boatner, Lynn A.;
Diebold, Ulrike;
Setvin, Martin;
Franchini, Cesare

Publication type:

Article

Interplay between topological valley and quantum Hall edge transport.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-31680-y

By:

Geisenhof, Fabian R.;
Winterer, Felix;
Seiler, Anna M.;
Lenz, Jakob;
Martin, Ivar;
Weitz, R. Thomas

Publication type:

Article

Optical manipulation of Rashba-split 2-dimensional electron gas.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30742-5

By:

Michiardi, M.;
Boschini, F.;
Kung, H.-H.;
Na, M. X.;
Dufresne, S. K. Y.;
Currie, A.;
Levy, G.;
Zhdanovich, S.;
Mills, A. K.;
Jones, D. J.;
Mi, J. L.;
Iversen, B. B.;
Hofmann, Ph.;
Damascelli, A.

Publication type:

Article

Cooling low-dimensional electron systems into the microkelvin regime.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28222-x

By:

Levitin, Lev V.;
van der Vliet, Harriet;
Theisen, Terje;
Dimitriadis, Stefanos;
Lucas, Marijn;
Corcoles, Antonio D.;
Nyéki, Ján;
Casey, Andrew J.;
Creeth, Graham;
Farrer, Ian;
Ritchie, David A.;
Nicholls, James T.;
Saunders, John

Publication type:

Article

Fractionalized conductivity and emergent self-duality near topological phase transitions.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-25707-z

By:

Wang, Yan-Cheng;
Cheng, Meng;
Witczak-Krempa, William;
Meng, Zi Yang

Publication type:

Article