Works matching DE "ARSENIDES"

Results: 181

Yttrium Complexes of Arsine, Arsenide, and Arsinidene Ligands.

Published in:

Angewandte Chemie, 2015, v. 127, n. 14, p. 4329, doi. 10.1002/ange.201500173

By:

Pugh, Thomas;
Kerridge, Andrew;
Layfield, Richard A.

Publication type:

Article

An Anti CuO2-type Metal Hydride Square Net Structure in Ln2M2As2H x (Ln=La or Sm, M=Ti, V, Cr, or Mn).

Published in:

Angewandte Chemie, 2015, v. 127, n. 10, p. 2975, doi. 10.1002/ange.201409023

By:

Mizoguchi, Hiroshi;
Park, SangWon;
Hiraka, Haruhiro;
Ikeda, Kazutaka;
Otomo, Toshiya;
Hosono, Hideo

Publication type:

Article

Surface effect of n-GaAs cap on the THz emission in LT-GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12436, doi. 10.1007/s10854-018-9360-1

By:

Balgos, Maria Herminia;
Jaculbia, Rafael;
Prieto, Elizabeth Ann;
Mag-usara, Valynn Katrine;
Tani, Masahiko;
Salvador, Arnel;
Estacio, Elmer;
Somintac, Armando

Publication type:

Article

Growth of Thin Cadmium Arsenide Films by Magnetron Sputtering and Their Structure.

Published in:

Inorganic Materials, 2019, v. 55, n. 9, p. 879, doi. 10.1134/S002016851909005X

By:

Kochura, A. V.;
Zakhvalinskii, V. S.;
Htet, Aung Zaw;
Ril', A. I.;
Pilyuk, E. A.;
Kuz'menko, A. P.;
Aronzon, B. A.;
Marenkin, S. F.

Publication type:

Article

Epitaxial growth of GaAs thin layers on NiSb substrates.

Published in:

Inorganic Materials, 2015, v. 51, n. 2, p. 83, doi. 10.1134/S002016851501001X

By:

Aitkhozhin, S.;
Artemov, A.;
Belousov, P.;
Bobylev, M.;
Kaevitser, E.;
Lyubchenko, V.;
Petrov, K.;
Temirov, Yu.;
Farafonov, S.

Publication type:

Article

High-pressure transport properties of cadmium and zinc Arsenides.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 861, doi. 10.1134/S002016851409009X

By:

Mollaev, A.;
Saipulaeva, L.;
Arslanov, R.;
Babushkin, A.

Publication type:

Article

Magnetic properties of oriented p-CdMnGeAs single crystals at pressures of up to 7 GPa.

Published in:

Inorganic Materials, 2011, v. 47, n. 12, p. 1295, doi. 10.1134/S0020168511110148

By:

Mollaev, A.;
Kamilov, I.;
Arslanov, R.;
Novotortsev, V.;
Marenkin, S.;
Zalibekov, U.;
Arslanov, T.;
Fedorchenko, I.

Publication type:

Article

Photoluminescence of i-GaInAs/ n-GaAs heterostructures containing a random InAs quantum dot array.

Published in:

Inorganic Materials, 2011, v. 47, n. 8, p. 816, doi. 10.1134/S0020168511080103

By:

Lunin, L.;
Sysoev, I.;
Alfimova, D.;
Chebotarev, S.;
Pashchenko, A.

Publication type:

Article

Phase equilibria and glass formation in the AsSe-MnSe system.

Published in:

Inorganic Materials, 2011, v. 47, n. 7, p. 703, doi. 10.1134/S0020168511070028

By:

Aliev, I.;
Il'yasly, T.;
Gasangulieva, Sh.;
Veliyev, C.

Publication type:

Article

New Arsenide Yb2Cu4As3: Crystal Structure and Electronic State of Ytterbium.

Published in:

Inorganic Materials, 2003, v. 39, n. 11, p. 1112, doi. 10.1023/A:1027328904725

By:

Demchyna, R. O.;
Kuz'ma, Yu. B.;
Burkhardt, U.;
Schnelle, W.;
Grin, Yu.

Publication type:

Article

Growth Retardation and Histopathology of Common Carp (Cyprinus carpio) Exposed to Gallium.

Published in:

Bulletin of Environmental Contamination & Toxicology, 2003, v. 71, n. 2, p. 0240, doi. 10.1007/s00128-003-0156-4

By:

Yang, J.-L.;
Chen, H.-C.

Publication type:

Article

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000676

By:

Shoron, Omor F.;
Goyal, Manik;
Guo, Binghao;
Kealhofer, David A.;
Schumann, Timo;
Stemmer, Susanne

Publication type:

Article

Hydrothermal Mineralization and Mineral Chemistry of Arsenides and Sulfarsenides in the Fe-Co-Ni-As-S System and Introduction of Three Unique Minerals, Port Radium Deposit, Canada.

Published in:

Minerals (2075-163X), 2024, v. 14, n. 1, p. 85, doi. 10.3390/min14010085

By:

Somarin, Alireza K.;
Zhou, Li;
Zheng, Guodong;
Ma, Xiangxian

Publication type:

Article

CdAs2-based glasses: relation to the equilibrium crystalline phases.

Published in:

Physics & Chemistry of Glasses: European Journal of Glass Science & Technology Part B, 2016, v. 57, n. 5, p. 201, doi. 10.13036/17533562.57.5.002

By:

Červinka, Ladislav;
Holba, Pavel

Publication type:

Article

The aluminum arsenides AlmAsn (m + n = 2–5) and their anions: Structures, electron affinities and vibrational frequencies.

Published in:

European Physical Journal D (EPJ D), 2007, v. 42, n. 2, p. 259, doi. 10.1140/epjd/e2007-00041-9

By:

Guo, L.;
Wu, H.-S.

Publication type:

Article

Oxygenation‐Induced Two‐Dimensional Topological Insulators in Antimony Arsenide.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 7, p. N.PAG, doi. 10.1002/pssr.201900146

By:

Xiao, Wen‐Zhi;
Xiao, Gang;
Rong, Qing‐Yan;
Wang, Ling‐Ling

Publication type:

Article

Estimate of ionicity of zeolite NaA using the frequency shift values of physisorbed molecular hydrogen.

Published in:

Molecular Physics, 1996, v. 88, n. 5, p. 1399, doi. 10.1080/00268979609484519

By:

Larin, Alexander V.;
Lara, Evelyne Cohen De

Publication type:

Article

Non-resonant Microwave Absorption and Boundary Current Response of Ba0.34K0.64Fe2As2 Superconducting Single Crystals.

Published in:

Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 10, p. 3077, doi. 10.1007/s10948-019-5017-4

By:

Ramashitja, T. C.;
Vallabhapurapu, Hyma H.;
Srinivasu, V. V.

Publication type:

Article

First-Principles Study of Magnetism and Half-Metallic Properties for the Quaternary Heusler Alloys CoMnTiZ (Z = P, As, and Sb).

Published in:

Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 10, p. 3027, doi. 10.1007/s10948-015-3126-2

By:

Khodami, M.;
Ahmadian, F.

Publication type:

Article

The Study of the Properties for “111” Type Iron Arsenide Superconductor.

Published in:

Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 5, p. 583, doi. 10.1007/s10948-010-0736-6

By:

Wang, X. C.;
Liu, Q. Q.;
Deng, Z.;
Lv, Y. X.;
Gao, W. B.;
Zhang, S. J.;
Yu, R. C.;
Jin, C. Q.

Publication type:

Article

Charge Expulsion, Spin Meissner Effect, and Charge Inhomogeneity in Superconductors.

Published in:

Journal of Superconductivity & Novel Magnetism, 2009, v. 22, n. 2, p. 131, doi. 10.1007/s10948-008-0381-5

By:

Hirsch, J. E.

Publication type:

Article

Sulfoarsenide complexes of gold in hydrothermal solutions in the formation of gold ore deposits (thermodynamic modeling).

Published in:

Doklady Earth Sciences, 2014, v. 458, n. 1, p. 1086, doi. 10.1134/S1028334X14090116

By:

Vilor, N.;
Kaz'min, L.;
Goryachev, N.

Publication type:

Article

Comparative analysis of thermal problems in GaAs- and InP-based 1.3-µm VECSELs.

Published in:

Optica Applicata, 2013, v. 43, n. 2, p. 325, doi. 10.5277/oa130212

By:

SOKÓŁ, ADAM K.;
SARZAŁA, ROBERT P.

Publication type:

Article

Autoclave Leaching of Arsenic from Copper Concentrate and Matte.

Published in:

Metallurgist, 2015, v. 59, n. 1/2, p. 177, doi. 10.1007/s11015-015-0080-y

By:

Neustroev, V.;
Karimov, K.;
Naboichenko, S.;
Kovyazin, A.

Publication type:

Article

Effects of sweating temperature on the purification of phosphoric acid hemihydrate crystal in dry-sweating process.

Published in:

Canadian Journal of Chemical Engineering, 2013, v. 91, n. 8, p. 1459, doi. 10.1002/cjce.21767

By:

Wang, Baoming;
Li, Jun;
Luo, Jianhong;
Zhou, Kun;
Jin, Yang;
Qi, Yabing;
Ma, Chunlei

Publication type:

Article

Optical microscope with SNOM option for micro- and nanoanalytical investigations at low temperatures.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 6, p. 889, doi. 10.1007/s00339-002-1970-y

By:

Danzebrink, H.-U.;
Kazantsev, D.V.;
Dal Savio, C.;
Pierz, K.;
Güttler, B.

Publication type:

Article

The search for a potentially new molecular species, SiAs: A theoretical contribution.

Published in:

Molecular Physics, 2012, v. 110, n. 24, p. 3085, doi. 10.1080/00268976.2012.697585

By:

Batista, Ana Paula de Lima;
Ornellas, Fernando R.

Publication type:

Article

The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenide.

Published in:

Advances in Physics, 1975, v. 24, n. 5, p. 593, doi. 10.1080/00018737500101471

By:

Coates, R.;
Mitchell, E.W.J.

Publication type:

Article

A Report of 2 Cases of Acute Hydrogen Arsenide Poisoning.

Published in:

2023

By:

Wang, Xingyi;
Bai, Lishuang;
Ma, Xiao;
Yang, Li-Shan

Publication type:

Case Study

Odontoblast responses to GaAlAs laser irradiation in rat molars: an experimental study using heat-shock protein-25 immunohistochemistry.

Published in:

European Journal of Oral Sciences, 2006, v. 114, n. 1, p. 50, doi. 10.1111/j.1600-0722.2006.00261.x

By:

Tate, Yasuaki;
Yoshiba, Kunihiko;
Yoshiba, Nagako;
Iwaku, Masaaki;
Okiji, Takashi;
Ohshima, Hayato

Publication type:

Article

On the Characteristic Features of the Impurity Energy Spectrum in Arsenides.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1578, doi. 10.1134/S1063782619160103

By:

Kamiliov, I. K.;
Daunov, M. I.;
Gajiev, G. M.;
Arslanov, R. K.

Publication type:

Article

Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers.

Published in:

Semiconductors, 2018, v. 52, n. 15, p. 1947, doi. 10.1134/S1063782618150113

By:

Revin, M. V.;
Kotkov, A. P.;
Ivanov, V. A.;
Rad'kov, Yu. F.;
Svinkov, N. V.;
Artemov, A. N.;
Gribov, B. G.

Publication type:

Article

Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 783, doi. 10.1134/S1063782617060057

By:

Basalaev, Yu.;
Kopytov, A.;
Poplavnoi, A.;
Polygalov, Yu.

Publication type:

Article

Role of charged defects in the photoconductivity of SeAs chalcogenide glassy semiconductor with the EuF impurity.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 148, doi. 10.1134/S1063782614020122

By:

Isayev, A.;
Mekhtiyeva, S.;
Garibova, S.;
Zeynalov, V.

Publication type:

Article

Experimental evaluation of the carrier lifetime in GaAs grown at low temperature.

Published in:

Semiconductors, 2012, v. 46, n. 5, p. 619, doi. 10.1134/S106378261205017X

By:

Pastor, A.;
Serdobintsev, P.;
Chaldyshev, V.

Publication type:

Article

Space-charge-limited currents in an SeAs chalcogenide glass-like semiconductor system containing EuF impurities.

Published in:

Semiconductors, 2011, v. 45, n. 12, p. 1538, doi. 10.1134/S1063782611120050

By:

Isayev, A.;
Mekhtiyeva, S.;
Qaribova, S.

Publication type:

Article

Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 91, doi. 10.1134/S1063782611010167

By:

Nemcsics, Ákos;
Takács, Jenö

Publication type:

Article

Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses.

Published in:

Semiconductors, 2009, v. 43, n. 13, p. 1667, doi. 10.1134/S1063782609130119

By:

Katsoev, L.;
Katsoev, V.;
Il’ichev, É.

Publication type:

Article

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 758, doi. 10.1134/S1063782606070025

By:

Boĭtsov, A.V.;
Bert, N.A.;
Musikhin, Yu.G.;
Chaldyshev, V.V.;
Yagovkina, M.A.;
Preobrazhenskiĭ, V.V.;
Putyato, M.A.;
Semyagin, B.R.

Publication type:

Article

Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 285, doi. 10.1134/1.1882787

By:

Kozlov, A. I.;
Sobolev, V. V.;
Knjazev, A. F.

Publication type:

Article

Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 – xAs Matrix on a GaAs Substrate.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 833, doi. 10.1134/1.1777610

By:

Kryzhanovskaya, N.V.;
Gladyschev, A.G.;
Blokhin, S.A.;
Musikhin, Yu G.;
Zhukov, A.E.;
Maksimov, M.V.;
Zakharov, N.D.;
Tatsul'nikov, A.F.;
Ledentsov, N.N.;
Werner, P.;
Guffart, F.;
Bimberg, D.

Publication type:

Article

Position of the Fermi level on an indium arsenide surface treated in sulfur vapor.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1301, doi. 10.1134/1.1187912

By:

Bezryadin, N. N.;
Tatokhin, E. A.;
Budanov, A. V.;
Linnik, A. V.;
Arsent’ev, I. N.

Publication type:

Article

Drug-induced gingival enlargement: Biofilm control and surgical therapy with gallium–aluminum–arsenide (GaAlAs) diode laser—A 2-year follow-up.

Published in:

Special Care in Dentistry, 2010, v. 30, n. 2, p. 46, doi. 10.1111/j.1754-4505.2009.00126.x

By:

Guaré, Renata de Oliveira;
Costa, Soraya Carvalho;
Baeder, Fernando;
De Souza Merli, Luiz Antonio;
Rodrigues Dos Santos, Maria Teresa Botti

Publication type:

Article

Ab Initio Investigation of Vibrational, Optical and Thermodynamics Properties of Yttrium Arsenide.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5670, doi. 10.1007/s11664-017-5623-5

By:

Kansara, Shivam;
Singh, Deobrat;
Gupta, Sanjeev;
Sonvane, Yogesh

Publication type:

Article

Optical Distinctions Between Weyl Semimetal TaAs and Dirac Semimetal NaBi: An Ab Initio Investigation.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5867, doi. 10.1007/s11664-016-4766-0

By:

Dadsetani, Mehrdad;
Ebrahimian, Ali

Publication type:

Article

New Ternary Arsenides for High-Temperature Thermoelectric Applications.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1030, doi. 10.1007/s11664-008-0623-0

By:

Hong Xu;
Holgate, Tim;
Jian He;
Zhe Su;
Tritt, Terry M.;
Kleinke, Holger

Publication type:

Article

Electro-Thermal Resistance of GaAs Interconnects.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 3, p. 294, doi. 10.1007/s11664-005-0216-0

By:

Wartenberg, Scott A.;
Gang Zhao;
Liu, Qing H.

Publication type:

Article

Typomorphic features of platinum group minerals in the Kundus Placer gold (Kaakhem Ophiolite Belt, Tuva).

Published in:

Lithology & Mineral Resources, 2012, v. 47, n. 5, p. 437, doi. 10.1134/S002449021203008X

By:

Oidup, Ch.;
Mongush, A.;
Khuragan, Ch.

Publication type:

Article

Electrochemically modified semiconductor gallium arsenide electrodes for the argentometric titration of chlorides with silver nitrate in natural samples.

Published in:

Journal of Analytical Chemistry, 2014, v. 69, n. 11, p. 1079, doi. 10.1134/S1061934814110033

By:

Burakhta, V.;
Sataeva, S.

Publication type:

Article

Investigation of effects of interlayer interaction and biaxial strain on the phonon dispersion and dielectric response of hexagonal boron arsenide.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-48654-9

By:

Behzad, Somayeh;
Chegel, Raad

Publication type:

Article