Works matching DE "THROUGH-silicon via"

Results: 97

Modeling and Simulation for Predicting Thermo-Mechanical Behavior of Wafer-Level Cu-PI RDLs During Manufacturing.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 582, doi. 10.3390/mi16050582

By:

Chu, Xianglong;
Wang, Shitao;
Li, Chunlei;
Wang, Zhizhen;
Ma, Shenglin;
Wu, Daowei;
Yuan, Hai;
You, Bin

Publication type:

Article

Research Status of Copper Film Slurries for Through-Silicon Via Process: Research Status of Copper Film Slurries for Through-Silicon Via Process: X. Chen et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 2, p. 910, doi. 10.1007/s11664-024-11629-1

By:

Chen, Xuhua;
Liu, Zeyu;
Wang, Ru;
Han, Shengxing;
Zeng, Yao;
Li, Yiken

Publication type:

Article

High Frequency Electrical Characterization of 3D Signal/Ground through Silicon Vias.

Published in:

Progress in Electromagnetics Research Letters, 2014, v. 47, p. 71, doi. 10.2528/pierl14052704

By:

Adamshick, Steve;
Carroll, Robert;
Rao, Megha;
La Tulipe, Douglas;
Kruger, Seth;
Burke, John;
Liehr, Michael

Publication type:

Article

Genetic Algorithms and Particle Swarm Optimization Mechanisms for Through-Silicon Via (TSV) Noise Coupling.

Published in:

Applied Computational Intelligence & Soft Computing, 2021, p. 1, doi. 10.1155/2021/8830395

By:

Ait Belaid, Khaoula;
Belahrach, H.;
Ayad, H.

Publication type:

Article

Addressing Interposer and TSV Quality Challenges.

Published in:

EE: Evaluation Engineering, 2012, v. 51, n. 2, p. 16

By:

Nelson, Rick

Publication type:

Article

Three-Stage Optimization of Pre-Bond Diagnosis of TSV Defects.

Published in:

Journal of Electronic Testing, 2017, v. 33, n. 5, p. 573, doi. 10.1007/s10836-017-5681-x

By:

Zhang, Bei;
Agrawal, Vishwani

Publication type:

Article

Recovery of TSV Based 3D IC.

Published in:

International Journal of Advanced Research in Computer Science, 2017, v. 8, n. 5, p. 149

By:

Ghosh, Sudeep;
Banik, Mandira;
Chakraborty, Tridib

Publication type:

Article

Boundary Layers Defect Diagnosis and Analysis of Through Silicon Via (TSV).

Published in:

International Journal of Performability Engineering, 2019, v. 15, n. 1, p. 97, doi. 10.23940/ijpe.19.01.p10.97106

By:

Yuan Chen;
Peng Zhang;
Kuiliang Xia;
Hongzhong Huang

Publication type:

Article

Damage Mechanisms in Through-Silicon Vias Due to Thermal Exposure and Electromigration.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1214, doi. 10.1007/s11664-023-10845-5

By:

Lee, Tae-kyu;
Yang, Hanry;
Dutta, Indranath

Publication type:

Article

Study on Thermal Shock and Annealing Behavior of Sn3Ag0.5Cu-TSV Prepared by Modified Molten Metal Infiltration Method.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 7, p. 4054, doi. 10.1007/s11664-022-09600-z

By:

Wang, Jiaojiao;
Ma, Limin;
Feng, Jianyu;
Wang, Yishu;
Guo, Fu

Publication type:

Article

Evaluation of Cu-TSV Barrier Materials as a Solution to Copper Protrusion.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 3, p. 2076, doi. 10.1007/s11664-019-07894-0

By:

Zare, Yazdan;
Sasajima, Yasushi;
Onuki, Jin

Publication type:

Article

Heating Rate Dependence of the Mechanisms of Copper Pumping in Through-Silicon Vias.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 159, doi. 10.1007/s11664-018-6805-5

By:

Yang, Hanry;
Lee, Tae-Kyu;
Meinshausen, Lutz;
Dutta, Indranath

Publication type:

Article

Mechanism of the Local Cu Protrusion in Cu-Filled Through Silicon Vias Under Heat Treatment.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 152, doi. 10.1007/s11664-018-6803-7

By:

Zhao, Xuewei;
Ma, Limin;
Wang, Yishu;
Guo, Fu

Publication type:

Article

Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 1, p. 142, doi. 10.1007/s11664-017-5885-y

By:

Zhao, Xuewei;
Ma, Limin;
Wang, Yishu;
Guo, Fu

Publication type:

Article

Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2898, doi. 10.1007/s11664-015-3752-2

By:

Mu, Wei;
Sun, Shuangxi;
Jiang, Di;
Fu, Yifeng;
Edwards, Michael;
Zhang, Yong;
Jeppson, Kjell;
Liu, Johan

Publication type:

Article

Analysis of 3D TSV Vertical Interconnection Using Pre-applied Nonconductive Films.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 11, p. 4214, doi. 10.1007/s11664-014-3319-7

By:

Choi, Yongwon;
Shin, Jiwon;
Suk, Kyung-lim;
Kim, Young;
Kim, Il;
Paik, Kyung-Wook

Publication type:

Article

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 9, p. 2533, doi. 10.1007/s11664-012-2117-3

By:

Heryanto, A.;
Putra, W.N.;
Trigg, A.;
Gao, S.;
Kwon, W.S.;
Che, F.X.;
Ang, X.F.;
Wei, J.;
I Made, R.;
Gan, C.L.;
Pey, K.L.

Publication type:

Article

Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 4, p. 712, doi. 10.1007/s11664-012-1943-7

By:

Shin, Hae-A-Seul;
Kim, Byoung-Joon;
Kim, Ju-Heon;
Hwang, Sung-Hwan;
Budiman, Arief;
Son, Ho-Young;
Byun, Kwang-Yoo;
Tamura, Nobumichi;
Kunz, Martin;
Kim, Dong-Ik;
Joo, Young-Chang

Publication type:

Article

Electrical and Mechanical Analysis of Different TSV Geometries.

Published in:

Metals (2075-4701), 2020, v. 10, n. 4, p. 467, doi. 10.3390/met10040467

By:

Jeong, Il Ho;
Eslami Majd, Alireza;
Jung, Jae Pil;
Ekere, Nduka Nnamdi

Publication type:

Article

High-efficiency core-shell solar cell array from Si wafer.

Published in:

Applied Physics A: Materials Science & Processing, 2012, v. 107, n. 4, p. 911, doi. 10.1007/s00339-012-6818-5

By:

Guo, Ning;
Wei, Jinquan;
Shu, Qinke;
Jia, Yi;
Song, Shuang;
Xu, Ying;
Wang, Hongguang;
Li, Peixu;
Zhu, Hongwei;
Wang, Kunlin;
Wu, Dehai

Publication type:

Article

STTAR: A Traffic- and Thermal-Aware Adaptive Routing for 3D Network-on-Chip Systems.

Published in:

Computers, Materials & Continua, 2022, v. 72, n. 3, p. 5531, doi. 10.32604/cmc.2022.027177

By:

Juan Fang;
Yunfei Mao;
Min Cai;
Li'ang Zhao;
Huijie Chen;
Wei Xiang

Publication type:

Article

Coupling capacitance in through-silicon vias:non-homogeneous medium effect.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 2, p. 152, doi. 10.1049/el.2015.3141

By:

Ramadan, T.;
Yahya, E.;
Ismail, Y.;
Dessouky, M.

Publication type:

Article

On-chip trimming circuit based on embedded one-time-programming memory for magnetic wireless interlayer transmission module.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 24, p. 2064, doi. 10.1049/el.2015.2275

By:

Liang-Shun Chang;
Kuei-Hung Shen;
Ming-Jinn Tsai;
Chrong-Jung Lin;
Ya-Chin King

Publication type:

Article

Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 13, p. 1025, doi. 10.1049/el.2015.1265

By:

Cecchetti, R.;
Piersanti, S.;
de Paulis, F.;
Orlandi, A.;
Fan, J.

Publication type:

Article

Simultaneous process self-calibration method using TDC for 3D DDR4 DRAM.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 22, p. 1579, doi. 10.1049/el.2014.1595

By:

Reum Oh;
J. Jang;
J. Kim;
Man Young Sung

Publication type:

Article

BMD impact on silicon fin defect at TSV bottom.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 13, p. 954, doi. 10.1049/el.2014.0974

By:

Dingyou Zhang;
Thangaraju, Sarasvathi;
Smith, Daniel;
Kamineni, Himani;
Klewer, Christian;
Scholefield, Mark;
Ming Lei;
Vikram, Abhishek;
Lim, Victor;
Wonwoo Kim;
Alapati, Ramakanth

Publication type:

Article

基于硅通孔的三维微系统互联结构总剂量效应损伤机制研究.

Published in:

Atomic Energy Science & Technology, 2024, v. 58, n. 8, p. 1789, doi. 10.7538/yzk.2023.youxian.0771

By:

王昊;
陈睿;
陈钱;
韩建伟;
于新;
孟德超;
杨驾鹏;
薛玉雄;
周泉丰;
韩瑞龙

Publication type:

Article

Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology.

Published in:

Journal of Low Power Electronics & Applications, 2014, v. 4, n. 2, p. 77, doi. 10.3390/jlpea4020077

By:

Batra, Pooja;
Skordas, Spyridon;
LaTulipe, Douglas;
Winstel, Kevin;
Kothandaraman, Chandrasekharan;
Himmel, Ben;
Maier, Gary;
He, Bishan;
Gamage, Deepal Wehella;
Golz, John;
Wei Lin;
Vo, Tuan;
Priyadarshini, Deepika;
Hubbard, Alex;
Cauffman, Kristian;
Peethala, Brown;
Barth, John;
Kirihata, Toshiaki;
Graves-Abe, Troy;
Robson, Norman

Publication type:

Article

Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V.

Published in:

Journal of Circuits, Systems & Computers, 2020, v. 29, n. 03, p. N.PAG, doi. 10.1142/S0218126620500395

By:

Saponara, Sergio;
Ciarpi, Gabriele;
Erlbacher, Tobias;
Rattmann, Gudrun

Publication type:

Article

A TSV Fault-Tolerant Scheme Based on Failure Classification in 3D-NoC.

Published in:

Journal of Circuits, Systems & Computers, 2017, v. 26, n. 4, p. -1, doi. 10.1142/S0218126617500591

By:

Ouyang, Yiming;
Da, Jian;
Wang, Xiumin;
Han, Qianqian;
Liang, Huaguo;
Du, Gaoming

Publication type:

Article

Minimal Buffer Insertion Based Low Power Clock Tree Synthesis for 3D Integrated Circuits.

Published in:

Journal of Circuits, Systems & Computers, 2016, v. 25, n. 11, p. -1, doi. 10.1142/S0218126616501425

By:

Sumanth Kumar, Kamineni;
Reuben, John

Publication type:

Article

Assessment of through‐silicon‐vias with different configurations of ground vias and accounting for substrate losses.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 10, p. 1, doi. 10.1002/mmce.22811

By:

Rodríguez‐Velásquez, Yojanes;
Murphy‐Arteaga, Roberto S.;
Torres‐Torres, Reydezel

Publication type:

Article

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2018, v. 28, n. 9, p. N.PAG, doi. 10.1002/mmce.21447

By:

Liu, Xiaoxian;
Zhu, Zhangming;
Yang, Yintang;
Liu, Yang;
Lu, Qijun;
Yin, Xiangkun

Publication type:

Article

Study of the protrusion of through-silicon vias in dual annealing-CMP processes for 3D integration.

Published in:

Microsystems & Nanoengineering, 2025, v. 11, n. 1, p. 1, doi. 10.1038/s41378-024-00797-z

By:

Liu, Tianjian;
Wang, Shizhao;
Dong, Fang;
Xi, Yang;
Zhang, Yunpeng;
He, Tao;
Sun, Xiang;
Liu, Sheng

Publication type:

Article

Through-polymer, via technology-enabled, flexible, lightweight, and integrated devices for implantable neural probes.

Published in:

Microsystems & Nanoengineering, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41378-024-00691-8

By:

Zhou, Cunkai;
Tian, Ye;
Li, Gen;
Ye, Yifei;
Gao, Lusha;
Li, Jiazhi;
Liu, Ziwei;
Su, Haoyang;
Lu, Yunxiao;
Li, Meng;
Zhou, Zhitao;
Wei, Xiaoling;
Qin, Lunming;
Tao, Tiger H.;
Sun, Liuyang

Publication type:

Article

A Novel 3D Encapsulation Structure Based on Subwavelength Structure and Inserted Pyrex Glass for RF MEMS Infrared Detectors.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 9, p. 974, doi. 10.3390/electronics8090974

By:

Zhao, Jicong;
Ge, Mingmin;
Song, Chenguang;
Sun, Ling;
Sun, Haiyan

Publication type:

Article

Numerical Laplace Inversion Method for Through-Silicon Via (TSV) Noise Coupling in 3D-IC Design.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 9, p. 1010, doi. 10.3390/electronics8091010

By:

Ait Belaid, Khaoula;
Belahrach, Hassan;
Ayad, Hassan

Publication type:

Article

TSV Technology and High-Energy Heavy Ions Radiation Impact Review.

Published in:

Electronics (2079-9292), 2018, v. 7, n. 7, p. 112, doi. 10.3390/electronics7070112

By:

Tian, Wenchao;
Ma, Tianran;
Liu, Xiaohan

Publication type:

Article

An Introductory Overview of Various Typical Lead-Free Solders for TSV Technology.

Published in:

Inorganics, 2025, v. 13, n. 3, p. 86, doi. 10.3390/inorganics13030086

By:

Choi, Sooyong;
Lim, Sooman;
Hanifah, Muhamad Mukhzani Muhamad;
Matteini, Paolo;
Yusoff, Wan Yusmawati Wan;
Hwang, Byungil

Publication type:

Article

High-Level Crosstalk Model in N-Coupled Through-Silicon Vias (TSVs).

Published in:

Advances in Electrical & Computer Engineering, 2018, v. 18, n. 3, p. 9, doi. 10.4316/AECE.2018.03002

By:

Hyeonggeon LEE;
Jong Kang PARK;
Jong Tae KIM

Publication type:

Article

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1831-4

By:

Shen, Wen-Wei;
Chen, Kuan-Neng

Publication type:

Article

MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments †.

Published in:

Sensors (14248220), 2025, v. 25, n. 3, p. 636, doi. 10.3390/s25030636

By:

Ghanam, Muhannad;
Woias, Peter;
Goldschmidtböing, Frank

Publication type:

Article

A Design Method and Application of Meta-Surface-Based Arbitrary Passband Filter for Terahertz Communication.

Published in:

Sensors (14248220), 2024, v. 24, n. 4, p. 1291, doi. 10.3390/s24041291

By:

Hou, Da;
Wang, Lihui;
Lin, Qiuhua;
Xu, Xiaodong;
Li, Yin;
Luo, Zhiyong;
Chen, Hao

Publication type:

Article

The Impact of 3D Stacking and Technology Scaling on the Power and Area of Stereo Matching Processors.

Published in:

Sensors (14248220), 2017, v. 17, n. 2, p. 426, doi. 10.3390/s17020426

By:

Seung-Ho Ok;
Yong-Hwan Lee;
Jae Hoon Shim;
Sung Kyu Lim;
Byungin Moon

Publication type:

Article

A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications.

Published in:

Sensors (14248220), 2017, v. 17, n. 2, p. 322, doi. 10.3390/s17020322

By:

Shuai Shao;
Dapeng Liu;
Yuling Niu;
O'Donnel, Kathy;
Sengupta, Dipak;
Seungbae Park

Publication type:

Article

Peer-Reviewed Literature of Interest to Failure Analysis: A Cornucopia.

Published in:

Electronic Device Failure Analysis, 2021, v. 23, n. 3, p. 46

By:

Bruce, Michael R.

Publication type:

Article

LITERATURE REVIEW.

Published in:

Electronic Device Failure Analysis, 2020, v. 22, n. 2, p. 46

By:

Bruce, Michael R.

Publication type:

Article

HIGH RESOLUTION ACOUSTIC GHz MICROSCOPY.

Published in:

Electronic Device Failure Analysis, 2018, v. 20, n. 4, p. 4, doi. 10.31399/asm.edfa.2018-4.p004

By:

Brand, Sebastian;
Kögel, Michael;
Altmann, Frank

Publication type:

Article

NOVEL TECHNIQUE MEASURES WARPAGE IN NEXT-GENERATION ICs.

Published in:

Electronic Device Failure Analysis, 2017, v. 19, n. 3, p. 43

By:

Wagner, Larry

Publication type:

Article

EMERGING TECHNIQUES FOR 2-D/2.5-D/3-D PACKAGE FAILURE ANALYSIS: EOTPR, 3-D X-RAY, AND PLASMA FIB.

Published in:

Electronic Device Failure Analysis, 2016, v. 18, n. 4, p. 30, doi. 10.31399/asm.edfa.2016-4.p030

By:

Schmidt, Christian;
Alton, Jesse;
Igarashi, Martin;
Chan, Lisa;
Principe, Edward

Publication type:

Article