Works matching IS 03701972 AND DT 2015 AND VI 252 AND IP 5
Results: 64
Model for carrier capture time through phonon emission in InGaN/GaN quantum wells.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 971, doi. 10.1002/pssb.201451580
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- Publication type:
- Article
Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1024, doi. 10.1002/pssb.201451581
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- Article
Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 936, doi. 10.1002/pssb.201451582
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- Article
Carrier dynamics in blue and green emitting InGaN MQWs.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 977, doi. 10.1002/pssb.201451583
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- Article
Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 917, doi. 10.1002/pssb.201451585
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- Publication type:
- Article
Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 989, doi. 10.1002/pssb.201451586
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- Article
Structural and optical properties of MBE-grown asymmetric cubic GaN/Al<sub> x</sub>Ga<sub>1- x</sub>N double quantum wells.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 873, doi. 10.1002/pssb.201451531
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- Publication type:
- Article
Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 983, doi. 10.1002/pssb.201451588
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- Article
Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1096, doi. 10.1002/pssb.201451589
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- Article
Extraction of interface trap density of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS heterostructure capacitance.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 996, doi. 10.1002/pssb.201451468
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- Article
Sixteen years GaN on Si.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1063, doi. 10.1002/pssb.201451656
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- Article
Transparent, conductive bulk GaN by high temperature ammonothermal growth.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1069, doi. 10.1002/pssb.201451587
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- Publication type:
- Article
Carrier distributions in InGaN/GaN light-emitting diodes.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 890, doi. 10.1002/pssb.201451534
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- Publication type:
- Article
A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 866, doi. 10.1002/pssb.201451535
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- Publication type:
- Article
Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1172, doi. 10.1002/pssb.201451604
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- Publication type:
- Article
Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1180, doi. 10.1002/pssb.201451609
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- Publication type:
- Article
Issue Information.
- Published in:
- 2015
- Publication type:
- Other
Contents.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 845, doi. 10.1002/pssb.201570331
- Publication type:
- Article
Recent and forthcoming publications in pss.
- Published in:
- 2015
- Publication type:
- Other
Nitride Semiconductors.
- Published in:
- 2015
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- Publication type:
- Other
Nobel Lectures in Annalen der Physik.
- Published in:
- 2015
- Publication type:
- Other
Information for authors.
- Published in:
- 2015
- Publication type:
- Other
TiO thin films on GaN(0001).
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1001, doi. 10.1002/pssb.201451480
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- Publication type:
- Article
Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1109, doi. 10.1002/pssb.201451489
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- Publication type:
- Article
Extending group-III nitrides to the infrared: Recent advances in InN.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1050, doi. 10.1002/pssb.201451628
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- Publication type:
- Article
Chemical understanding and utility of H<sub>3</sub>PO<sub>4</sub> etching of group-III- nitrides.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1121, doi. 10.1002/pssb.201451504
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- Publication type:
- Article
GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1127, doi. 10.1002/pssb.201451507
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- Article
Self-organized growth of catalyst-free GaN nano- and micro-rods on Si(111) substrates by MOCVD.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1132, doi. 10.1002/pssb.201451508
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- Article
First-principles theory of acceptors in nitride semiconductors.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 900, doi. 10.1002/pssb.201552062
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- Publication type:
- Article
Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1089, doi. 10.1002/pssb.201451571
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- Publication type:
- Article
Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 895, doi. 10.1002/pssb.201451576
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- Publication type:
- Article
Schottky barrier height modulation at metal/n-GaN interface by BCl<sub>3</sub>/Ar plasma treatment.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1011, doi. 10.1002/pssb.201451577
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- Publication type:
- Article
Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1017, doi. 10.1002/pssb.201451579
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- Publication type:
- Article
First-principles theory of acceptors in nitride semiconductors (Phys. Status Solidi B 5/2015).
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- 2015
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- Publication type:
- Other
Extending group-III nitrides to the infrared: Recent advances in InN (Phys. Status Solidi B 5/2015).
- Published in:
- 2015
- By:
- Publication type:
- Other
Electrical characteristics of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1031, doi. 10.1002/pssb.201451590
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- Publication type:
- Article
Low defect large area semi-polar (11.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1104, doi. 10.1002/pssb.201451591
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- Publication type:
- Article
Band gap bowing and optical polarization switching in Al.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 879, doi. 10.1002/pssb.201451593
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- Publication type:
- Article
Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence-band parameters in InGaN alloy material.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 885, doi. 10.1002/pssb.201451594
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- Publication type:
- Article
GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111).
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1195, doi. 10.1002/pssb.201451596
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- Publication type:
- Article
Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1155, doi. 10.1002/pssb.201451597
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- Publication type:
- Article
Contactless electroreflectance studies of surface potential barrier in AlGaN/n-AlGaN structures with various Al concentrations.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1038, doi. 10.1002/pssb.201451598
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- Publication type:
- Article
Effect of sputtering power on surface characteristics and crystal quality of AlN films deposited by pulsed DC reactive sputtering.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1163, doi. 10.1002/pssb.201451599
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- Publication type:
- Article
High-quality GaN film and AlGaN/GaN HEMT grown on 4-inch Si(110) substrates by MOCVD using an ultra-thin AlN/GaN superlattice interlayer.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1075, doi. 10.1002/pssb.201451478
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- Publication type:
- Article
Excitation-dependent carrier dynamics in Al-rich AlGaN layers and multiple quantum wells.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1043, doi. 10.1002/pssb.201451479
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- Publication type:
- Article
Efficiency droop and carrier transport in AlGaN epilayers and heterostructures.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 961, doi. 10.1002/pssb.201451542
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- Publication type:
- Article
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 928, doi. 10.1002/pssb.201451543
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- Publication type:
- Article
First-principles investigation of the GaN growth process in carbon-added Na-flux method.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1084, doi. 10.1002/pssb.201451546
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- Publication type:
- Article
Thick (~1 μm) p-type In <sub>x</sub>Ga<sub>1- x</sub>N ( x ~ 0.36) grown by MOVPE at a low temperature (~570 °C).
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 909, doi. 10.1002/pssb.201451736
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- Publication type:
- Article
Semi-polar.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1189, doi. 10.1002/pssb.201552054
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- Publication type:
- Article