Works matching IS 03701972 AND DT 2012 AND VI 249 AND IP 10

Results: 45

Information for authors.

Published in:: Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2047, doi. 10.1002/pssb.201240937
Publication type:: Article

Tetrahedral germanium in amorphous phase change materials: Exploring the isochemical scenario.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1890, doi. 10.1002/pssb.201200398

By:

Micoulaut, Matthieu;
Kachmar, Ali;
Charpentier, Thibault

Publication type:

Article

Emerging topological insulating phase in GeSbTe compounds.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1874, doi. 10.1002/pssb.201200369

By:

Kim, Jeongwoo;
Jhi, Seung-Hoon

Publication type:

Article

Bonding and optical contrast in phase change memory materials.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1867, doi. 10.1002/pssb.201200361

By:

Robertson, J.;
Huang, B.

Publication type:

Article

Dynamics of crystallization with fractal geometry: Extended KJMA approach in glasses.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2024, doi. 10.1002/pssb.201200347

By:

Shimakawa, Koichi

Publication type:

Article

Content (Phys. Status Solidi B 10/2012).

Published in:: Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1817, doi. 10.1002/pssb.201240933
Publication type:: Article

Phase-change processors, memristors and memflectors.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1978, doi. 10.1002/pssb.201200378

By:

Wright, C. David;
Wang, Lei;
Aziz, Mustafa M.;
Diosdado, Jorge A. Vazquez;
Ashwin, Peter

Publication type:

Article

Progress in understanding the Ovshinsky Effect: Threshold switching in chalcogenide amorphous semiconductors.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1951, doi. 10.1002/pssb.201200420

By:

Hudgens, Stephen

Publication type:

Article

The switching effect in chalcogenides: Ioffe Institute investigations.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1962, doi. 10.1002/pssb.201200534

By:

Tsendin, Konstantin

Publication type:

Article

Stanford R. Ovshinsky - A sketch.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1827, doi. 10.1002/pssb.201200574

By:

Fritzsche, Hellmut

Publication type:

Article

A reconsideration of the thermodynamics of phase-change switching.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1932, doi. 10.1002/pssb.201200350

By:

Tominaga, Junji;
Wang, Xiaomin;
Kolobov, Alexander V.;
Fons, Paul

Publication type:

Article

Phase-change memory: Science and applications.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1824, doi. 10.1002/pssb.201240936

By:

Kolobov, Alexander V.;
Popescu, Mihai

Publication type:

Article

Disorder in order: A study of local and global order in Ge-rich GeSbTe alloys.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1919, doi. 10.1002/pssb.201200497

By:

Fons, P.;
Matsunaga, T.;
Kolobov, A. V.;
Krbal, M.;
Tominaga, J.;
Yamada, N.

Publication type:

Article

Relation between photodarkening and photoexpansion in As2S3 glass.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2019, doi. 10.1002/pssb.201200354

By:

Tanaka, Keiji

Publication type:

Article

Front Cover: Amorphous structures of Ge/Sb/Te alloys: Density functional simulations (Phys. Status Solidi B 9/2012).

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. n/a, doi. 10.1002/pssb.201290025

By:

Akola, J.;
Jones, R. O.

Publication type:

Article

Electric-field-assisted crystallisation in phase-change materials.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1897, doi. 10.1002/pssb.201200376

By:

Kohary, Krisztian;
Diosdado, Jorge A. Vázquez;
Ashwin, Peter;
Wright, C. David

Publication type:

Article

On the epitaxy of germanium telluride thin films on silicon substrates.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1939, doi. 10.1002/pssb.201200367

By:

Giussani, Alessandro;
Perumal, Karthick;
Hanke, Michael;
Rodenbach, Peter;
Riechert, Henning;
Calarco, Raffaella

Publication type:

Article

Memories of a visiting scientist.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1831, doi. 10.1002/pssb.201200358

By:

Mytilineou, Eugenia

Publication type:

Article

Origin, secret, and application of the ideal phase-change material GeSbTe.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1837, doi. 10.1002/pssb.201200618

By:

Yamada, Noboru

Publication type:

Article

Origin of photoinduced defects in glassy As2S3 under band gap illumination studied by Raman scattering: A revisory approach.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2005, doi. 10.1002/pssb.201200385

By:

Yannopoulos, S. N.;
Andrikopoulos, K. S.;
Kastrissios, D. Th.;
Papatheodorou, G. N.

Publication type:

Article

Characterization of Ge2Sb2Te5 thin film alloys using conductive-tip atomic force microscopy.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1945, doi. 10.1002/pssb.201200356

By:

Chang, Chia Min;
Liu, Yen Ju;
Tseng, Ming Lun;
Chu, Nien-Nan;
Huang, Ding-Wei;
Mansuripur, Masud;
Tsai, Din Ping

Publication type:

Article

Nanostructure-property relations for phase-change random access memory (PCRAM) line cells.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1972, doi. 10.1002/pssb.201200371

By:

Kooi, B.J.;
Oosthoek, J.L.M.;
Verheijen, M.A.;
Kaiser, M.;
Jedema, F.J.;
Gravesteijn, D.J.

Publication type:

Article

p-Type conductivity of GeTe: The role of lone-pair electrons.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1902, doi. 10.1002/pssb.201200434

By:

Kolobov, Alexander V.;
Fons, Paul;
Tominaga, Junji

Publication type:

Article

Issue Information.

Published in:: Physica Status Solidi (B), 2012, v. 249, n. 10, p. n/a, doi. 10.1002/pssb.201290027
Publication type:: Article

Observing the amorphous-to-crystalline phase transition in Ge2Sb2Te5 non-volatile memory materials from ab initio molecular-dynamics simulations.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1886, doi. 10.1002/pssb.201200382

By:

Lee, T. H.;
Elliott, S. R.

Publication type:

Article

Amorphous structures of Ge/Sb/Te alloys: Density functional simulations.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1851, doi. 10.1002/pssb.201200393

By:

Akola, J.;
Jones, R. O.

Publication type:

Article

Midgap states, Raman scattering, glass homogeneity, percolative rigidity and stress transitions in chalcogenides.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2013, doi. 10.1002/pssb.201200368

By:

Boolchand, P.;
Gunasekera, K.;
Bhosle, S.

Publication type:

Article

Content (Phys. Status Solidi B 10/2012).

Published in:: Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1823, doi. 10.1002/pssb.201240935
Publication type:: Article

Phase transitions in Ga-Sb phase change alloys.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1999, doi. 10.1002/pssb.201200370

By:

Raoux, Simone;
König, Anja K.;
Cheng, Huai-Yu;
Garbin, Daniele;
Cheek, Roger W.;
Jordan-Sweet, Jean L.;
Wuttig, Matthias

Publication type:

Article

Configuration effects of superlattice-like phase change material structure.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1925, doi. 10.1002/pssb.201200415

By:

Zhao, R.;
Shi, L. P.;
Tan, C. C.;
Lee, H. K.;
Yang, H. X.;
Law, L. T.;
Chong, T. C.

Publication type:

Article

Making the semiconductor-metal transition in a growth-dominant phase-change alloy InSb for double density blu-ray super-RENS-ROM disc.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1992, doi. 10.1002/pssb.201200341

By:

Hyot, Bérangère

Publication type:

Article

Fast and scalable memory characteristics of Ge-doped SbTe phase change materials.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1985, doi. 10.1002/pssb.201200419

By:

Cheong, Byung-ki;
Lee, Suyoun;
Jeong, Jeung-hyun;
Park, Sohee;
Han, Seungwu;
Wu, Zhe;
Ahn, Dong-Ho

Publication type:

Article

Recent and forthcoming publications in pss.

Published in:: Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1822, doi. 10.1002/pssb.201240934
Publication type:: Article

Phase change materials: Chalcogenides with remarkable properties due to an unconventional bonding mechanism.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1843, doi. 10.1002/pssb.201200582

By:

Wuttig, Matthias

Publication type:

Article

The shape of order in glasses.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2034, doi. 10.1002/pssb.201200421

By:

Chechetkina, E. A.

Publication type:

Article

Back Cover: Phase-change processors, memristors and memflectors (Phys. Status Solidi B 10/2012).

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. n/a, doi. 10.1002/pssb.201290026

By:

Wright, C. David;
Wang, Lei;
Aziz, Mustafa M.;
Diosdado, Jorge A. Vazquez;
Ashwin, Peter

Publication type:

Article

Possible mechanisms of switching in amorphous chalcogenides.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1966, doi. 10.1002/pssb.201200351

By:

Popescu, Mihai;
Velea, Alin

Publication type:

Article

Truncated Lorch-window method revealing the off-octahedral Ge in nanocrystalline Ge2Sb2Te5.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1914, doi. 10.1002/pssb.201200377

By:

Liu, X. Q.;
Li, X. B.;
Zhang, B.;
Zhang, S. B.;
Ma, E.;
Zhang, Z.;
Han, X. D.

Publication type:

Article

Role of electronic excitation in phase-change memory materials: A brief review.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1861, doi. 10.1002/pssb.201200380

By:

Li, X.-B.;
Liu, X. Q.;
Han, X. D.;
Zhang, S. B.

Publication type:

Article

Role of potential fluctuations in phase-change GST memory devices.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1956, doi. 10.1002/pssb.201200362

By:

Agarwal, Satish C.

Publication type:

Article

Nanosecond-scale time-resolved electron imaging during laser crystallization of GeTe.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1907, doi. 10.1002/pssb.201200418

By:

Santala, Melissa K.;
Reed, Bryan W.;
Raoux, Simone;
Topuria, Teya;
LaGrange, Thomas;
Campbell, Geoffrey H.

Publication type:

Article

Short range order and Ag diffusion threshold in Ag x(Ge0.25Se0.75)100− x glasses.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2028, doi. 10.1002/pssb.201200384

By:

Piarristeguy, A. A.;
Cuello, G. J.;
Fernández-Martínez, A.;
Cristiglio, V.;
Johnson, M.;
Ribes, M.;
Pradel, A.

Publication type:

Article

Breakdown of Stokes-Einstein relation in the supercooled liquid state of phase change materials.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1880, doi. 10.1002/pssb.201200355

By:

Sosso, G. C.;
Behler, J.;
Bernasconi, M.

Publication type:

Article

Integration of chalcogenide glassy films and liquid crystals for photoalignment and optically addressed modulators.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 2040, doi. 10.1002/pssb.201200366

By:

Abdulhalim, I.;
Kirzhner, M. Gelbaor;
Kurioz, Yu.;
Klebanov, M.;
Lyubin, V.;
Reznikov, Yu.;
Sheremet, N.;
Slyusarenko, K.

Publication type:

Article

Stanford R. Ovshinsky Prize for Excellence in Amorphous Chalcogenides.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1835, doi. 10.1002/pssb.201200348

By:

Popescu, Mihai

Publication type:

Article