Works matching IS 03701972 AND DT 2009 AND VI 246 AND IP 4
Results: 49
Theory of electronic and transport properties of resonant triple quantum dot molecules.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 736, doi. 10.1002/pssb.200880640
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Optical probing of spin fluctuations of a single magnetic atom.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 756, doi. 10.1002/pssb.200880651
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Spin control by ultra short laser pulses in a Mn doped quantum dot.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 779, doi. 10.1002/pssb.200880622
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Light-emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO<sub>2- δ </sub> thin film.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 889, doi. 10.1002/pssb.200880615
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Magnetic and structural properties of transition metal doped zinc-oxide nanostructures.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 766, doi. 10.1002/pssb.200880581
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Tunneling current through g -factor engineered series quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 740, doi. 10.1002/pssb.200880626
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Growth of GaSb dots on GaAs(100) by droplet epitaxy.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 733, doi. 10.1002/pssb.200880608
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Ageing and temperature-dependent behaviour of CdS nanoparticles.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 832, doi. 10.1002/pssb.200880574
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Spin-flip quenching in trion state mediated by optical phonons in a single quantum dot.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 775, doi. 10.1002/pssb.200880619
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Electrical injection of spin-polarized electrons into single quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 788, doi. 10.1002/pssb.200880659
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Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO<sub>2</sub>/Si(001) substrates.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 721, doi. 10.1002/pssb.200880589
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Cover Picture: Phys. Status Solidi B 246/4.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. n/a, doi. 10.1002/pssb.200990002
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- Article
Temperature dependent high resolution resonant spectroscopy on a charged quantum dot.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 795, doi. 10.1002/pssb.200880610
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- Article
Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 858, doi. 10.1002/pssb.200880650
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Recent and forthcoming publications in pss: Phys. Status Solidi B 246/4.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 691, doi. 10.1002/pssb.200940612
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- Article
GaN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N quantum dots and quantum dashes.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 842, doi. 10.1002/pssb.200880614
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Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In<sub>0.2</sub>Ga<sub>0.8</sub>As wells.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 880, doi. 10.1002/pssb.200880580
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Ordering of GaAs quantum dots by droplet epitaxy.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 729, doi. 10.1002/pssb.200880591
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Electrical properties of Ge nanocrystals grown in a SiO<sub>2</sub> matrix using MeV electron beam irradiation.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 747, doi. 10.1002/pssb.200880618
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Magneto-optics of layers of triple quantum dot molecules.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 771, doi. 10.1002/pssb.200880595
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Two-dimensional photonic crystals for mid-infrared quantum dot intersublevel emission.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 816, doi. 10.1002/pssb.200880588
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Switching of molecular magnets.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 695, doi. 10.1002/pssb.200844442
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Magnetic field induced charging effect in a single CdSe quantum dot.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 791, doi. 10.1002/pssb.200880660
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Interconnection between ground state and excited state gain in InAs/GaAs quantum dot semiconductor optical amplifiers.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 868, doi. 10.1002/pssb.200880631
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Contents: Phys. Status Solidi B 246/4.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 685, doi. 10.1002/pssb.200940611
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- Article
Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 828, doi. 10.1002/pssb.200880642
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Improvement in size distribution and optical properties of InAs/GaAs QDs by post growth thermal treatment.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 725, doi. 10.1002/pssb.200880590
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Wavelength stabilized quantum dot lasers for high power applications.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 872, doi. 10.1002/pssb.200880635
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Preparation of ZnO nanoparticles for bio-imaging applications.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 885, doi. 10.1002/pssb.200880606
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Nano-floating gate capacitor with SnO<sub>2</sub> quantum dots distributed in polyimide dielectrics.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 893, doi. 10.1002/pssb.200880617
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Four-wave mixing from individual excitons: Intensity dependence and imaging.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 820, doi. 10.1002/pssb.200880583
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Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C - V and deep level transient spectroscopy.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 808, doi. 10.1002/pssb.200880628
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White light generation through yellow nanophosphor and blue organic light-emitting diode.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 897, doi. 10.1002/pssb.200880668
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Theory of electron-hole exchange interaction in double quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 837, doi. 10.1002/pssb.200880594
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Two-colour photocurrent detection technique for coherent control of a single InGaAs/GaAs quantum dot.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 824, doi. 10.1002/pssb.200880639
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Optical orientation of electron and nuclear spins in strain free GaAs quantum dots grown by droplet epitaxy.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 762, doi. 10.1002/pssb.200880576
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Limits of In(Ga)As/GaAs quantum dot growth.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 717, doi. 10.1002/pssb.200880587
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Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 864, doi. 10.1002/pssb.200880598
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Coulomb effects in type-II Ga(As)Sb quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 752, doi. 10.1002/pssb.200880630
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Electrical transport properties of a single wall carbon nanotube network.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 744, doi. 10.1002/pssb.200880593
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Three-dimensional localization of excitons in the InAs/GaAs wetting layer - magnetospectroscopic study.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 850, doi. 10.1002/pssb.200880601
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Growth and properties of defect-free ZnSe nanowires and nanoneedles.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 812, doi. 10.1002/pssb.200880652
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Magneto photoluminescence in droplet epitaxial GaAs quantum rings.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 861, doi. 10.1002/pssb.200880663
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Zero effective electron g -factor of QD realized by optically induced nuclear field.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 784, doi. 10.1002/pssb.200880627
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CdSe quantum dot in a ZnSe nanowire as an efficient source of single photons.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 846, doi. 10.1002/pssb.200880670
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Electroluminescence from monolayer of quantum dots formed by multiple dip-coating processes.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 803, doi. 10.1002/pssb.200880609
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Ambient temperature dependence on emission spectrum of InAs quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 799, doi. 10.1002/pssb.200880575
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Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 876, doi. 10.1002/pssb.200880579
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Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 854, doi. 10.1002/pssb.200880624
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