Works matching IS 03701972 AND DT 2009 AND VI 246 AND IP 3
Results: 49
High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 532, doi. 10.1002/pssb.200880542
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Information for authors: Phys. Status Solidi B 246/3.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 682, doi. 10.1002/pssb.200940610
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- Article
Effect of pressure on electrical properties of short period InAs/GaSb superlattice.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 643, doi. 10.1002/pssb.200880520
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Measurement of phonon pressure coefficients for a precise determination of deformation potentials in SiGe alloys.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 548, doi. 10.1002/pssb.200880531
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Electronic structure of diluted magnetic semiconductors Pb<sub>1- x - y </sub>Ge <sub>x</sub> Cr <sub>y</sub> Te under pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 576, doi. 10.1002/pssb.200880502
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Ab initio calculations of ascorbic acid interacting with C<sub>61</sub>(COOH)<sub>2</sub> complex under pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 473, doi. 10.1002/pssb.200880513
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Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 486, doi. 10.1002/pssb.200880524
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Electrical properties of bulk n-ZnO single crystals under hydrostatic pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 664, doi. 10.1002/pssb.200880535
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Electroluminescence in quantum well heterostructures p-Al<sub> x </sub>Ga<sub>1- x </sub>As/GaAs<sub>1- y </sub>P<sub> y </sub>/n-Al<sub> x </sub>Ga<sub>1- x </sub>As under uniaxial stress.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 522, doi. 10.1002/pssb.200880506
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Structures at high pressure from random searching.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 536, doi. 10.1002/pssb.200880546
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Stability of the crystal structure of L-valine under high pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 553, doi. 10.1002/pssb.200880523
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About deep impurity centers in InAs.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 586, doi. 10.1002/pssb.200880534
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Effects of hydrostatic pressure on the conduction-electron g -factor in GaAs-Ga<sub>1- x </sub>Al <sub>x</sub> As quantum wells.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 648, doi. 10.1002/pssb.200880505
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Tuning of the charge ordered state in the manganite thin films by internal or external strains.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 635, doi. 10.1002/pssb.200880545
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Pressure tuning of external-cavity tapered laser.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 516, doi. 10.1002/pssb.200880512
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Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 508, doi. 10.1002/pssb.200880517
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Pressure and magnetic field effects on Pr<sub>1- x </sub>Ca <sub>x</sub> MnO<sub>3</sub> thin films.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 622, doi. 10.1002/pssb.200880539
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Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 581, doi. 10.1002/pssb.200880530
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Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 512, doi. 10.1002/pssb.200880501
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Configuration dependence of the electronic structure and optical properties of BC<sub>2</sub>N alloys.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 589, doi. 10.1002/pssb.200880541
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Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga<sub>1- x </sub>Al <sub>x</sub> As quantum dots.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 626, doi. 10.1002/pssb.200880516
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Unusual B1-B2 transition in PbSe under high pressure: evidence for two intermediate phases; transport, structural, and optical properties.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 615, doi. 10.1002/pssb.200880527
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Phonons and their pressure dependence of MnAs and MnN by ab initio calculations.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 558, doi. 10.1002/pssb.200880538
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Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X || [111].
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 612, doi. 10.1002/pssb.200880509
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Electronic and optical properties of III-nitrides under pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 570, doi. 10.1002/pssb.200880549
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Prediction of electronic, structural and elastic properties of the hardest oxide: TiO<sub>2</sub>.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 599, doi. 10.1002/pssb.200880540
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Utilization of high pressure for synthesizing superconducting semiconductors: analysis of Ekimov's method.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 673, doi. 10.1002/pssb.200880522
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Pressure dependence of the Raman active vibrations in InP-CdS hybrid nanoparticles.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 477, doi. 10.1002/pssb.200880504
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Optical properties of di-octyl substituted polyfluorene under hydrostatic pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 563, doi. 10.1002/pssb.200880544
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Superconductivity in diamond induced by boron doping at high pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 667, doi. 10.1002/pssb.200880515
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Preface: Phys. Status Solidi B 246/3.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 469, doi. 10.1002/pssb.200880550
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Electrical transport phenomena in magnesium-doped p-type GaN.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 658, doi. 10.1002/pssb.200880521
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Recent and forthcoming publications in pss: Phys. Status Solidi B 246/3.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 467, doi. 10.1002/pssb.200940609
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- Article
Application of piezoresistance effect in highly uniaxially strained p-Si and n-Si for current-carrier mobility increase.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 652, doi. 10.1002/pssb.200880508
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HPSP-13: Perspectives and summary remarks.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 679, doi. 10.1002/pssb.200880548
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Cover Picture: Phys. Status Solidi B 246/3.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. n/a, doi. 10.1002/pssb.200990001
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- Article
Electronic properties and phase transitions in Si, ZnSe, and GaAs under pressure cycling up to 20-30 GPa in a high-pressure cell.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 604, doi. 10.1002/pssb.200880526
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Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 527, doi. 10.1002/pssb.200880537
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The local structure of α-FeSi<sub>2</sub> under high pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 541, doi. 10.1002/pssb.200880532
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G-mode behaviour of closed ended single wall carbon nanotubes under pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 491, doi. 10.1002/pssb.200880503
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Hybrid reflections in InGaP/GaAs(001) by synchrotron radiation multiple diffraction.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 544, doi. 10.1002/pssb.200880543
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Baric and temperature dependences of kinetic coefficients in p-Cd<sub>0.7</sub>Mn<sub>0.3</sub>GeAs<sub>2</sub> at atmospheric and high pressures.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 655, doi. 10.1002/pssb.200880514
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Contents: Phys. Status Solidi B 246/3.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 461, doi. 10.1002/pssb.200940608
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- Article
Assumed Peierls transition in NbS<sub>3</sub> under pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 500, doi. 10.1002/pssb.200880525
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Excitons in coupled quantum dots: hydrostatic pressure and electric field effects.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 630, doi. 10.1002/pssb.200880536
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Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 504, doi. 10.1002/pssb.200880547
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High pressure Raman study of carotene-encapsulating single-wall carbon nanotubes.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 496, doi. 10.1002/pssb.200880518
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Polarized Raman study of self-assembled Ge/Si dots under hydrostatic pressure.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 482, doi. 10.1002/pssb.200880529
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Pressure effect on electronic properties of Sc<sub>0.5</sub>In<sub>0.5</sub>N compound.
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- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 594, doi. 10.1002/pssb.200880511
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