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Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition.
Published in:
Journal of Electronic Materials, 2015, v. 44, n. 1, p. 188, doi. 10.1007/s11664-014-3494-6
By:
- Mickevičius, J.;
- Aleknavičius, J.;
- Stanionytė, S.;
- Kadys, A.;
- Malinauskas, T.;
- Grinys, T.;
- Dmukauskas, M.;
- Tomašiūnas, R.;
- Selskis, A.;
- Kondrotas, R.;
- Lugauer, H.;
- Strassburg, M.
Publication type:
Article
Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2667, doi. 10.1007/s11664-014-3115-4
By:
- Arnatkevičiūtė, A.;
- Reklaitis, I.;
- Kadys, A.;
- Malinauskas, T.;
- Stanionytė, S.;
- Juška, G.;
- Rzheutski, M.;
- Tomašiūnas, R.
Publication type:
Article
Development of polarity inversion in a GaN waveguide structure for modal phase matching.
Published in:
Journal of Materials Science, 2020, v. 55, n. 26, p. 12008, doi. 10.1007/s10853-020-04831-z
By:
- Kolenda, M.;
- Kezys, D.;
- Reklaitis, I.;
- Radiunas, E.;
- Ritasalo, R.;
- Kadys, A.;
- Grinys, T.;
- Malinauskas, T.;
- Stanionytė, S.;
- Skapas, M.;
- Petruškevičius, R.;
- Tomašiūnas, R.
Publication type:
Article
Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation.
Published in:
Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 5/6, p. 193, doi. 10.1002/pssr.201105186
By:
- Ščajev, P.;
- Malinauskas, T.;
- Lubys, L.;
- Ivakin, E.;
- Nesladek, M.;
- Haenen, K.;
- Jarašiūnas, K.
Publication type:
Article
Nuotolinė GaN epitaksija per grafeną.
Published in:
Vilnius University Proceedings, 2023, v. 38, p. 53
By:
- Badokas, K.;
- Augulis, D.;
- Kadys, A.;
- Mickevičius, J.;
- Radiunas, E.;
- Skapas, M.;
- Stanionytė, S.;
- Ignatjev, I.;
- Šebeka, B.;
- Juška, G.;
- Malinauskas, T.
Publication type:
Article
Carrier dynamics in blue and green emitting InGaN MQWs.
Published in:
Physica Status Solidi (B), 2015, v. 252, n. 5, p. 977, doi. 10.1002/pssb.201451583
By:
- Aleksiejūnas, R.;
- Nomeika, K.;
- Miasojedovas, S.;
- Nargelas, S.;
- Malinauskas, T.;
- Jarašiūnas, K.;
- Tuna, Ö.;
- Heuken, M.
Publication type:
Article
Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD.
Published in:
Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1138, doi. 10.1002/pssb.201451560
By:
- Malinauskas, T.;
- Kadys, A.;
- Stanionytė, S.;
- Badokas, K.;
- Mickevičius, J.;
- Jurkevičius, J.;
- Dobrovolskas, D.;
- Tamulaitis, G.
Publication type:
Article
Recombination of free and bound excitons in GaN.
Published in:
Physica Status Solidi (B), 2008, v. 245, n. 9, p. 1723, doi. 10.1002/pssb.200844059
By:
- Monemar, B.;
- Paskov, P. P.;
- Bergman, J. P.;
- Toropov, A. A.;
- Shubina, T. V.;
- Malinauskas, T.;
- Usui, A.
Publication type:
Article
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1426, doi. 10.1002/pssb.200565139
By:
- Malinauskas, T.;
- Jarašiūnas, K.;
- Aleksiejunas, R.;
- Gogova, D.;
- Monemar, B.;
- Beaumont, B.;
- Gibart, P.
Publication type:
Article
PHOTOLUMINESCENCE FEATURES AND CARRIER DYNAMICS IN InGaN HETEROSTRUCTURES WITH WIDE STAIRCASE INTERLAYERS AND DIFFERENTLY SHAPED QUANTUM WELLS.
Published in:
Lithuanian Journal of Physics, 2014, v. 54, n. 3, p. 187, doi. 10.3952/physics.v54i3.2959
By:
- Kadys, A.;
- Malinauskas, T.;
- Dmukauskas, M.;
- Reklaitis, I.;
- Nomeika, K.;
- Gudelis, V.;
- Aleksiejūnas, R.;
- Ščajev, P.;
- Nargelas, S.;
- Miasojedovas, S.;
- Jarašiūnas, K.
Publication type:
Article

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