Works matching IS 03701972 AND DT 2006 AND VI 243 AND IP 7

Results: 62

Investigating the electrical properties of Si donors in Al xGa1- xN alloys.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1609, doi. 10.1002/pssb.200565461
By:
- James, G. R.;
- Omnès, F.;
- Leitch, A. W. R.
Publication type:
Article
Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1625, doi. 10.1002/pssb.200565432
By:
- Bulashevich, K. A.;
- Karpov, S. Yu.;
- Suris, R. A.
Publication type:
Article
Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1490, doi. 10.1002/pssb.200565311
By:
- Sánchez-García, M. A.;
- Grandal, J.;
- Calleja, E.;
- Lazic, S.;
- Calleja, J. M.;
- Trampert, A.
Publication type:
Article
The dominant shallow 0.225 eV acceptor in GaN.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1604, doi. 10.1002/pssb.200565425
By:
- Monemar, B.;
- Paskov, P. P.;
- Bergman, J. P.;
- Paskova, T.;
- Figge, S.;
- Dennemarck, J.;
- Hommel, D.
Publication type:
Article
Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1661, doi. 10.1002/pssb.200565407
By:
- Sebald, K.;
- Lohmeyer, H.;
- Gutowski, J.;
- Yamaguchi, T.;
- Hommel, D.
Publication type:
Article
MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1411, doi. 10.1002/pssb.200565373
By:
- Kuboya, S.;
- Nakajima, F.;
- Katayama, R.;
- Onabe, K.
Publication type:
Article
Doping of GaN with Fe and Mg for spintronics applications.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1701, doi. 10.1002/pssb.200565230
By:
- Bonanni, Alberta;
- Simbrunner, Clemens;
- Wegscheider, Matthias;
- Przybylinska, Hanka;
- Wolos, Agnieszka;
- Sitter, Helmut;
- Jantsch, Wolfgang
Publication type:
Article
X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1524, doi. 10.1002/pssb.200565344
By:
- Tsuda, Michinobu;
- Furukawa, Hiroko;
- Honshio, Akira;
- Iwaya, Motoaki;
- Kamiyama, Satoshi;
- Amano, Hiroshi;
- Akasaki, Isamu
Publication type:
Article
New semiconductor alloy GaNAsBi with temperature-insensitive bandgap.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1421, doi. 10.1002/pssb.200565270
By:
- Yoshimoto, Masahiro;
- Huang, Wei;
- Feng, Gan;
- Oe, Kunishige
Publication type:
Article
Pressure and composition dependence of the electron effective mass in GaAs1- xN x.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1599, doi. 10.1002/pssb.200565315
By:
- Gorczyca, I.;
- Christensen, N. E.;
- Svane, A.
Publication type:
Article
Growth and optical characterization of InAsN quantum dots.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1657, doi. 10.1002/pssb.200565395
By:
- Tsurusawa, H.;
- Nishikawa, A.;
- Katayama, R.;
- Onabe, K.
Publication type:
Article
Transient pump-probe measurements for polarized excitons in strained GaN epitaxial layers.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1564, doi. 10.1002/pssb.200565234
By:
- Ishiguro, T.;
- Toda, Y.;
- Adachi, S.;
- Arita, M.;
- Arakawa, Y.
Publication type:
Article
Growth of AlN nanowires by metal organic chemical vapour deposition.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1476, doi. 10.1002/pssb.200565205
By:
- Cimalla, V.;
- Foerster, Ch.;
- Cengher, D.;
- Tonisch, K.;
- Ambacher, O.
Publication type:
Article
Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1541, doi. 10.1002/pssb.200565256
By:
- Wójtowicz, T.;
- Gloux, F.;
- Ruterana, P.;
- Nouet, G.;
- Bodiou, L.;
- Braud, A.;
- Lorenz, K.;
- Alves, E.
Publication type:
Article
Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1588, doi. 10.1002/pssb.200565193
By:
- Arvanitidis, J.;
- Katsikini, M.;
- Ves, S.;
- Delimitis, A.;
- Kehagias, Th.;
- Komninou, Ph.;
- Dimakis, E.;
- Iliopoulos, E.;
- Georgakilas, A.
Publication type:
Article
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1426, doi. 10.1002/pssb.200565139
By:
- Malinauskas, T.;
- Jarašiūnas, K.;
- Aleksiejunas, R.;
- Gogova, D.;
- Monemar, B.;
- Beaumont, B.;
- Gibart, P.
Publication type:
Article
Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1508, doi. 10.1002/pssb.200565442
By:
- Barabash, R. I.;
- Ice, G. E.;
- Liu, W.;
- Roder, C.;
- Figge, S.;
- Einfeldt, S.;
- Hommel, D.;
- Katona, T. M.;
- Speck, J. S.;
- DenBaars, S. P.;
- Davis, R. F.
Publication type:
Article
X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1692, doi. 10.1002/pssb.200565413
By:
- Sancho-Juan, O.;
- Cantarero, A.;
- Martínez-Criado, G.;
- Olguín, D.;
- Garro, N.;
- Cros, A.;
- Salomé, M.;
- Susini, J.;
- Dhar, S.;
- Ploog, K.
Publication type:
Article
Resonant Raman scattering in InGaN alloys.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1494, doi. 10.1002/pssb.200565350
By:
- Davydov, V. Yu.;
- Klochikhin, A. A.;
- Goncharuk, I. N.;
- Smirnov, A. N.;
- Sakharov, A. V.;
- Skvortsov, A. P.;
- Yagovkina, M. A.;
- Lebedev, V. M.;
- Lu, Hai;
- Schaff, William J.
Publication type:
Article
Generalized Wannier functions: An efficient way to construct ab-initio tight-binding parameters for group-III nitrides.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1583, doi. 10.1002/pssb.200565475
By:
- Wahn, M.;
- Neugebauer, J.
Publication type:
Article
Optical properties of single non-polar GaN quantum dots.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1652, doi. 10.1002/pssb.200565406
By:
- Rol, F.;
- Gayral, B.;
- Founta, S.;
- Daudin, B.;
- Eymery, J.;
- Gérard, J.-M.;
- Mariette, H.;
- Dang, Le Si;
- Peyrade, D.
Publication type:
Article
Transition energies and Stokes shift analysis for In-rich InGaN alloys.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1572, doi. 10.1002/pssb.200565303
By:
- Schley, P.;
- Goldhahn, R.;
- Winzer, A. T.;
- Gobsch, G.;
- Cimalla, V.;
- Ambacher, O.;
- Rakel, M.;
- Cobet, C.;
- Esser, N.;
- Lu, H.;
- Schaff, W. J.
Publication type:
Article
A-plane (11 $ \bar 2 $.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1468, doi. 10.1002/pssb.200565383
By:
- Kumagai, Y.;
- Tsuyuguchi, A.;
- Naoi, H.;
- Araki, T.;
- Na, H.;
- Nanishi, Y.
Publication type:
Article
Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum-well structures embedded in an asymmetric microcavity.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1647, doi. 10.1002/pssb.200565325
By:
- Lin, D. Y.;
- Shiu, J. J.;
- Lin, C. F.
Publication type:
Article
N-plasma assisted MBE grown GaN films on Si(111).
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1416, doi. 10.1002/pssb.200565439
By:
- Gangopadhyay, Subhashis;
- Schmidt, Thomas;
- Falta, Jens
Publication type:
Article
RF-MBE growth and structural characterization of cubic InN films on GaAs.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1451, doi. 10.1002/pssb.200565376
By:
- Nakamura, T.;
- Iida, K.;
- Katayama, R.;
- Yamamoto, T.;
- Onabe, K.
Publication type:
Article
Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non-(0001) GaN facets.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1619, doi. 10.1002/pssb.200565101
By:
- Feneberg, M.;
- Schirra, M.;
- Neubert, B.;
- Brückner, P.;
- Scholz, F.;
- Sauer, R.;
- Thonke, K.
Publication type:
Article
Degenerate four-wave mixing spectroscopy of GaN films on various substrates.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1560, doi. 10.1002/pssb.200565167
By:
- Ishiguro, T.;
- Toda, Y.;
- Adachi, S.;
- Mukai, T.;
- Hoshino, K.;
- Arakawa, Y.
Publication type:
Article
Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1634, doi. 10.1002/pssb.200565192
By:
- Lazić, S.;
- Calleja, J. M.;
- Hey, R.;
- Ploog, K.
Publication type:
Article
Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1431, doi. 10.1002/pssb.200565208
By:
- Kumagai, Y.;
- Takemoto, K.;
- Kikuchi, J.;
- Hasegawa, T.;
- Murakami, H.;
- Koukitu, A.
Publication type:
Article
Temperature-dependent growth and characterization of N-polar InN films by molecular beam epitaxy.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1456, doi. 10.1002/pssb.200565145
By:
- Wang, Xinqiang;
- Che, Song-Bek;
- Ishitani, Yoshihiro;
- Yoshikawa, Akihiko
Publication type:
Article
Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1630, doi. 10.1002/pssb.200565116
By:
- Tchernycheva, M.;
- Nevou, L.;
- Doyennette, L.;
- Julien, F. H.;
- Guillot, F.;
- Monroy, E.;
- Remmele, T.;
- Albrecht, M.
Publication type:
Article
Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1696, doi. 10.1002/pssb.200565329
By:
- Hwang, J. I.;
- Ishida, Y.;
- Kobayashi, M.;
- Osafune, Y.;
- Mizokawa, T.;
- Fujimori, A.;
- Takeda, Y.;
- Terai, K.;
- Fujimori, S-I.;
- Saitoh, Y.;
- Muramatsu, Y.;
- Tanaka, A.;
- Kondo, T.;
- Munekata, H.;
- Hashimoto, M.;
- Tanaka, H.;
- Hasegawa, S.;
- Asahi, H.
Publication type:
Article
Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1436, doi. 10.1002/pssb.200565109
By:
- Tuomisto, F.;
- Hautakangas, S.;
- Makkonen, I.;
- Ranki, V.;
- Puska, M. J.;
- Saarinen, K.;
- Bockowski, M.;
- Suski, T.;
- Paskova, T.;
- Monemar, B.;
- Xu, X.;
- Look, D. C.
Publication type:
Article
Relaxation in crack-free AlN/GaN superlattices.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1533, doi. 10.1002/pssb.200565470
By:
- Kröger, R.;
- Kruse, C.;
- Roder, C.;
- Hommel, D.;
- Rosenauer, A.
Publication type:
Article
Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1529, doi. 10.1002/pssb.200565445
By:
- Danilchenko, B. A.;
- Zelensky, S. E.;
- Drok, E.;
- Vitusevich, S. A.;
- Danylyuk, S. V.;
- Klein, N.;
- Lüth, H.;
- Belyaev, A. E.;
- Kochelap, V. A.
Publication type:
Article
N-polarity GaN on sapphire substrate grown by MOVPE.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1446, doi. 10.1002/pssb.200565456
By:
- Matsuoka, Takashi;
- Kobayashi, Yasuyuki;
- Takahata, Hiroko;
- Mitate, Toshitugu;
- Mizuno, Seiichiro;
- Sasaki, Atsushi;
- Yoshimoto, Mamoru;
- Ohnishi, Tuyoshi;
- Sumiya, Masatomo
Publication type:
Article
Electric fields in AlGaN/GaN quantum well structures.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1551, doi. 10.1002/pssb.200565382
By:
- McAleese, C.;
- Costa, P. M. F. J.;
- Graham, D. M.;
- Xiu, H.;
- Barnard, J. S.;
- Kappers, M. J.;
- Dawson, P.;
- Godfrey, M. J.;
- Humphreys, C. J.
Publication type:
Article
Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1461, doi. 10.1002/pssb.200565449
By:
- Wang, K. R.;
- Tu, L. W.;
- Lin, S. J.;
- Chen, Y. L.;
- Jiang, Z. W.;
- Chen, M.;
- Hsiao, C. L.;
- Cheng, K. H.;
- Yeh, J. W.;
- Chen, S. K.
Publication type:
Article
GaN/AlGaN superlattices for optoelectronics in the mid-infrared.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1669, doi. 10.1002/pssb.200565328
By:
- Guillot, F.;
- Monroy, E.;
- Gayral, B.;
- Bellet-Amalric, E.;
- Jalabert, D.;
- Gérard, J.-M.;
- Dang, Le Si;
- Tchernycheva, M.;
- Julien, F. H.;
- Monnoye, S.;
- Mank, H.
Publication type:
Article
Growth of high-In-content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma-assisted molecular-beam epitaxy.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1481, doi. 10.1002/pssb.200565254
By:
- Kouno, Tetsuya;
- Kikuchi, Akihiko;
- Kishino, Katsumi
Publication type:
Article
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1545, doi. 10.1002/pssb.200565294
By:
- Drakopoulos, M.;
- Laügt, M.;
- Riemann, T.;
- Beaumont, B.;
- Gibart, P.
Publication type:
Article
In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1519, doi. 10.1002/pssb.200565247
By:
- Coraux, J.;
- Renevier, H.;
- Proietti, M. G.;
- Favre-Nicolin, V.;
- Daudin, B.;
- Renaud, G.
Publication type:
Article
Four-wave mixing measurements of biexcitons in uniaxially-strained GaN films.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1568, doi. 10.1002/pssb.200565298
By:
- Adachi, Satoru;
- Toda, Yasunori;
- Ishiguro, Tetsuro
Publication type:
Article
The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1665, doi. 10.1002/pssb.200565115
By:
- Narita, Tetsuo;
- Honda, Yoshio;
- Yamaguchi, Masahito;
- Sawaki, Nobuhiko
Publication type:
Article
Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1639, doi. 10.1002/pssb.200565269
By:
- Sellers, I. R.;
- Semond, F.;
- Leroux, M.;
- Massies, J.;
- Henneghien, A-L.;
- Disseix, P.;
- Leymarie, J.;
- Vasson, A.
Publication type:
Article
Fast spin relaxation in InGaN/GaN multiple quantum wells.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1643, doi. 10.1002/pssb.200565271
By:
- Brown, J.;
- Wells, J.-P. R.;
- Hashemizadeh, S. A.;
- Parbrook, P. J.;
- Wang, T.;
- Fox, A. M.;
- Mowbray, D. J.;
- Skolnick, M. S.
Publication type:
Article
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1403, doi. 10.1002/pssb.200690013
By:
- Drakopoulos, M.;
- Laügt, M.;
- Riemann, T.;
- Beaumont, B.;
- Gibart, P.
Publication type:
Article
Site selectivity of Fe3+Ga and the formation of Fe3+Ga-Gai pairs in GaN.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1687, doi. 10.1002/pssb.200565466
By:
- Gehlhoff, W.;
- Azamat, D.;
- Hoffmann, A.
Publication type:
Article
Low density GaN quantum dots on AlGaN.
Published in:
Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1486, doi. 10.1002/pssb.200565231
By:
- Pakuła, K.;
- Bożek, R.;
- Surowiecka, K.;
- Stępniewski, R.;
- Wysmolek, A.;
- Baranowski, J. M.
Publication type:
Article