Works matching IS 03701972 AND DT 2004 AND VI 241 AND IP 12

Results: 54

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2835, doi. 10.1002/pssb.200405100

By:

Roh, O. H.;
Tomita, Y.;
Ohsugi, M.;
Wang, X.;
Ishitani, Y.;
Yoshikawa, A.

Publication type:

Article

Novel cladding structure for ZnSe-based white LEDs with longer lifetime over 10,000 hours.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2659, doi. 10.1002/pssb.200404973

By:

Nakamura, T.;
Katayama, K.;
Mori, H.;
Fujiwara, S.

Publication type:

Article

Impurity band in magnesium-doped GaN layers grown by metalorganic chemical vapor deposition.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2759, doi. 10.1002/pssb.200405115

By:

Kang, D. S.;
Cheong, M. G.;
Lee, S.-K.;
Suh, E.-K.;
Hong, C.-H.;
Lee, H. J.

Publication type:

Article

Study on the stability of the high-brightness white LED.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2664, doi. 10.1002/pssb.200404977

By:

Chen, Z. Z.;
Zhao, J.;
Qin, Z. X.;
Hu, X. D.;
Yu, T. J.;
Tong, Y. Z.;
Yang, Z. J.;
Zhou, X. Y.;
Yao, G. Q.;
Zhang, B.;
Zhang, G. Y.

Publication type:

Article

Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2693, doi. 10.1002/pssb.200405012

By:

Liu, K. T.;
Su, Y. K.;
Chang, S. J.;
Onomitsu, K.;
Horikoshi, Y.

Publication type:

Article

Carrier injection and light emission in visible and UV nitride LEDs by modeling.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2668, doi. 10.1002/pssb.200405023

By:

Karpov, S. Yu.;
Bulashevich, K. A.;
Zhmakin, I. A.;
Nestoklon, V. O.;
Mymrin, V. F.;
Makarov, Yu. N.

Publication type:

Article

A study of magnetic clusters in Co-doped ZnO using neutron scattering.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2858, doi. 10.1002/pssb.200405005

By:

Lee, Hyeon-Jun;
Ryu, Gi-Hun;
Kim, Sung-Kyu;
Kim, Shin Ae;
Lee, Chang-Hee;
Jeong, Se-Young;
Cho, Chae Ryong

Publication type:

Article

Efficient conversion of blue light into white light by means of rare-earth-ion-doped transparent material.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2672, doi. 10.1002/pssb.200405089

By:

Mita, Y.;
Kobayashi, Takeshi;
Miyamoto, Yoshinobu;
Ishii, Osamu;
Sawanobori, Naruhito

Publication type:

Article

High-quality GaN films grown on Si(111) by a reversed Stranski-Krastanov growth mode.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2698, doi. 10.1002/pssb.200405016

By:

Chen, N. C.;
Shih, C. F.;
Chang, C. A.;
Chiu, A. P.;
Teng, S. D.;
Liu, K. S.

Publication type:

Article

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2820, doi. 10.1002/pssb.200405056

By:

Yan, J.;
Kappers, M. J.;
Crossley, A.;
McAleese, C.;
Phillips, W. A.;
Humphreys, C. J.

Publication type:

Article

Optically pumped lasing and gain formation properties in blue In x Ga1- x N MQWs.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2676, doi. 10.1002/pssb.200405096

By:

Kojima, K.;
Shikanai, A.;
Omae, K.;
Funato, M.;
Kawakami, Y.;
Narukawa, Y.;
Mukai, T.;
Fujita, Sg.

Publication type:

Article

Eu concentration dependence on structural and optical properties of Eu-doped GaN.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2708, doi. 10.1002/pssb.200405027

By:

Bang, Hyungjin;
Morishima, Shinichi;
Tsukamoto, Takaharu;
Li, Zhiqiang;
Sawahata, Junji;
Seo, Jongwon;
Takiguchi, Mikio;
Bando, Yoshio;
Akimoto, Katsuhiro

Publication type:

Article

Epitaxial growth of hexagonal and cubic InN films.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2839, doi. 10.1002/pssb.200405049

By:

Nishida, K.;
Kitamura, Y.;
Hijikata, Y.;
Yaguchi, H.;
Yoshida, S.

Publication type:

Article

Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2643, doi. 10.1002/pssb.200490017

By:

Ruterana, P.;
Singh, P.;
Kret, S.;
Jurczak, G.;
Maciejewski, G.;
Dluzewski, P.;
Cho, H. K.;
Choi, R. J.;
Lee, H. J.;
Suh, E. K.

Publication type:

Article

Dielectric and optical studies of phase transitions in [(CH3)2NH2]5Cd2CuCl11 crystal.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. R57, doi. 10.1002/pssb.200409056

By:

Elyashevskyy, Yu.;
Dacko, S.;
Kosturek, B.;
Czapla, Z.;
Kapustyanik, V. B.

Publication type:

Article

Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2843, doi. 10.1002/pssb.200405121

By:

Kurouchi, M.;
Araki, T.;
Naoi, H.;
Yamaguchi, T.;
Suzuki, A.;
Nanishi, Y.

Publication type:

Article

Stimulated emission from GaN nanocolumns.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2754, doi. 10.1002/pssb.200405103

By:

Kikuchi, Akihiko;
Yamano, Kouji;
Tada, Makoto;
Kishino, Katsumi

Publication type:

Article

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2795, doi. 10.1002/pssb.200405040

By:

Grahn, H. T.

Publication type:

Article

Efficiency enhancement of InGaN/GaN light-emitting diodes utilizing island-like GaN substrate.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2713, doi. 10.1002/pssb.200405033

By:

Hsu, J. T.;
Tsay, J. D.;
Guo, Y. D.;
Chuo, C. C.;
Pan, S. M.

Publication type:

Article

Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2730, doi. 10.1002/pssb.200405073

By:

Ishibashi, Akihiko;
Kawaguchi, Yasutoshi;
Sugahara, Gaku;
Shimamoto, Toshitaka;
Yokogawa, Toshiya;
Yamada, Yoichi;
Ueki, Yusuke;
Nakamura, Kohzo;
Taguchi, Tsunemasa

Publication type:

Article

Direct heteroepitaxial lateral overgrowth of GaN on stripe-patterned sapphire substrates with very thin SiO2 masks.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2763, doi. 10.1002/pssb.200405118

By:

Cheong, H. S.;
Yoo, M. K.;
Kim, H. G.;
Bae, S. J.;
Kim, C. S.;
Hong, C.-H.;
Baek, J. H.;
Kim, H. J.;
Yu, Y. M.;
Cho, H. K.

Publication type:

Article

Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2735, doi. 10.1002/pssb.200405084

By:

Ruterana, P.;
Singh, P.;
Kret, S.;
Jurczak, G.;
Maciejewski, G.;
Dluzewski, P.;
Cho, H. K.;
Choi, R. J.;
Lee, H. J.;
Suh, E. K.

Publication type:

Article

MBE growth of Zn-polar ZnO on MOCVD-ZnO templates.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2825, doi. 10.1002/pssb.200405055

By:

Kato, Hiroyuki;
Sano, Michihiro;
Miyamoto, Kazuhiro;
Yao, Takafumi;
Zhang, Bao-Ping;
Wakatsuki, Katsuki;
Segawa, Yusaburo

Publication type:

Article

Photo-induced absorption change for InGaN film by violet laser diode.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2703, doi. 10.1002/pssb.200405026

By:

Nomura, Masahiro;
Arita, Munetaka;
Ashihara, Satoshi;
Nishioka, Masao;
Arakawa, Yasuhiko;
Shimura, Tsutomu;
Kuroda, Kazuo

Publication type:

Article

Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2816, doi. 10.1002/pssb.200405088

By:

Cho, H. K.;
Park, T. E.;
Kim, D. C.;
Shin, J. E.;
Lee, J. S.

Publication type:

Article

The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2722, doi. 10.1002/pssb.200405059

By:

Cho, Yong Suk;
Kim, Jeakyun;
Park, Young Ju;
Na, Hyunseok;
Kim, Hee Jin;
Kim, Hyun Jin;
Yoon, Euijoon;
Kim, Young Woon

Publication type:

Article

Thermal analysis of GaN-based LEDs using the finite element method and unit temperature profile approach.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2681, doi. 10.1002/pssb.200405099

By:

Lee, Tae Hee;
Kim, Lan;
Hwang, Woong Joon;
Lee, C. C.;
Shin, Moo Whan

Publication type:

Article

Low-frequency vibrational modes of viruses used for nanoelectronic self-assemblies.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. R67, doi. 10.1002/pssb.200409062

By:

Fonoberov, Vladimir A.;
Balandin, Alexander A.

Publication type:

Article

11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), Berkeley, USA, 2-5 August 2004.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2655, doi. 10.1002/pssb.200402097

By:

Cardona, M.

Publication type:

Article

White light emitting silicon nanocrystals as nanophosphor.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2767, doi. 10.1002/pssb.200404971

By:

Lee, Soojin;
Cho, Woon Jo;
Han, Il Ki;
Choi, Won Jun;
Lee, Jung Il

Publication type:

Article

Electron beam induced light emission from the polythiophene derivative/ITO structure.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2862, doi. 10.1002/pssb.200405102

By:

Panin, Gennady N.;
Kang, Tae Won;
Lee, Haiwon

Publication type:

Article

Magnetic properties of GaMnN grown via molecular beam epitaxy using a single precursor.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2854, doi. 10.1002/pssb.200404975

By:

Lee, K. J.;
Kim, K. H.;
Yu, F. C.;
Im, W. S.;
Gao, C. X.;
Kim, D. J.;
Kim, H. J.;
Ihm, Y. E.

Publication type:

Article

Optical characterization of InAsN single quantum wells grown by RF-MBE.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2791, doi. 10.1002/pssb.200405032

By:

Kuroda, M.;
Katayama, R.;
Onabe, K.;
Shiraki, Y.

Publication type:

Article

Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2802, doi. 10.1002/pssb.200405043

By:

Kim, Hwa-Mok;
Lee, Hosang;
Kim, Suk Il;
Ryu, Sung Ryong;
Kang, Tae Won;
Chung, Kwan Soo

Publication type:

Article

Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2685, doi. 10.1002/pssb.200404979

By:

Boćkowski, M.;
Grzegory, I.;
Łucznik, B.;
Krukowski, S.;
Wróblewski, M.;
Kwiatkowski, P.;
Jasik, K.;
Wawer, W.;
Borysiuk, J.;
Kamler, G.;
Porowski, S.

Publication type:

Article

Quantum chemical study on substituent effect of gas-phase reactions in III-V nitride semiconductor crystal growth.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2744, doi. 10.1002/pssb.200405087

By:

Okada, Takanobu;
Doi, Kentaro;
Nakamura, Koichi;
Tachibana, Akitomo

Publication type:

Article

Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2717, doi. 10.1002/pssb.200405058

By:

Inoue, Y.;
Hoshino, T.;
Takeda, S.;
Ishida, A.;
Fujiyasu, H.;
Kominami, H.;
Mimura, H.;
Nakanishi, Y.;
Sakakibara, S.

Publication type:

Article

Structural and optical properties of rare-earth doped quantum dots grown by plasma-assisted MBE.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2787, doi. 10.1002/pssb.200405029

By:

Hori, Y.;
Andreev, T.;
Jalabert, D.;
Biquard, X.;
Monroy, E.;
Tanaka, M.;
Oda, O.;
Dang, Le Si;
Daudin, B.

Publication type:

Article

The influence of aluminum composition of Al xGa1- xAs in distributed Bragg reflector on surface morphology.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2726, doi. 10.1002/pssb.200405069

By:

Kim, B.;
Yoon, M.;
Kim, S.;
Son, J.;
Jhin, J.;
Byun, D.

Publication type:

Article

Raman spectroscopy with UV excitation on untwinned single crystals of YBa2Cu3O7- δ.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. R63, doi. 10.1002/pssb.200409061

By:

Bahrs, S.;
Reich, S.;
Zwick, A.;
Goñi, A. R.;
Bacsa, W.;
Nieva, G.;
Thomsen, C.

Publication type:

Article

11th International Conference on Phonon Scattering in Condensed Matter (Phonons 2004), St. Petersburg, Russia, 25-30 July 2004.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2651, doi. 10.1002/pssb.200402096

By:

Kent, A. J.

Publication type:

Article

Structural analysis of thick GaN films grown by hydride vapour phase epitaxy.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2689, doi. 10.1002/pssb.200404985

By:

Ruterana, Pierre;
Chen, Jun;
Nouet, Gérard;
Lei, Benliang;
Ye, Haohua;
Yu, Guanghui;
Qi, Ming;
Li, Aizhen

Publication type:

Article

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2779, doi. 10.1002/pssb.200404996

By:

Kalliakos, S.;
Bretagnon, T.;
Lefebvre, P.;
Juillaguet, S.;
Taliercio, T.;
Guillet, T.;
Gil, B.;
Grandjean, N.;
Damilano, B.;
Dussaigne, A.;
Massies, J.

Publication type:

Article

Optical and electrical properties of ZnO doped with nitrogen.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2830, doi. 10.1002/pssb.200405071

By:

Kang, Seungmo;
Shin, Kyoungchul;
Prabakar, Kandasamy;
Lee, Chongmu

Publication type:

Article

Metal/GaN reaction chemistry and their electrical properties.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2771, doi. 10.1002/pssb.200404978

By:

Kim, C. C.;
Seol, S. K.;
Kim, J. K.;
Lee, J.-L.;
Hwu, Y.;
Ruterana, P.;
Magaritondo, G.;
Je, J. H.

Publication type:

Article

Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2775, doi. 10.1002/pssb.200404989

By:

Lee, Sang-Kwon;
Choi, Heon-Jin;
Pauzauskie, Peter;
Yang, Peidong;
Cho, Nam-Kyu;
Park, Hyo-Derk;
Suh, Eun-Kyung;
Lim, Kee-Young;
Lee, Hyung-Jae

Publication type:

Article

Built-in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase-selected photoreflectance excitation.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2749, doi. 10.1002/pssb.200405093

By:

Katayama, Ryuji;
Onabe, Kentaro;
Shiraki, Yasuhiro

Publication type:

Article

Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2783, doi. 10.1002/pssb.200405024

By:

Yu, Tongjun;
Li, Zilan;
Qin, Z. X.;
Chen, Z. Z.;
Yang, Z. J.;
Hu, X. D.;
Zhang, G. Y.

Publication type:

Article

First-principle study on electronic properties of gallium nitride and aluminium nitride nanowires.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2806, doi. 10.1002/pssb.200405064

By:

Doi, Kentaro;
Higashimaki, Nobuyuki;
Kawakami, Yoshihiko;
Nakamura, Koichi;
Tachibana, Akitomo

Publication type:

Article

Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF-MBE.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2739, doi. 10.1002/pssb.200405086

By:

Katayama, Ryuji;
Onabe, Kentaro;
Shiraki, Yasuhiro

Publication type:

Article