Works matching IS 03701972 AND DT 2004 AND VI 241 AND IP 10
Results: 39
Computational optical band gap bowing of III-V semiconductors alloys.
- Published in:
- Physica Status Solidi (B), 2004, v. 241, n. 10, p. R38, doi. 10.1002/pssb.200409048
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Diffusion in silicon and the predictive power of ab-initio calculations.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2313, doi. 10.1002/pssb.200404931
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Exciton mixing and internal transitions of neutral magnetoexcitons in quantum wells.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2434, doi. 10.1002/pssb.200404902
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Crystalline oxides on semiconductors: a future for the nanotransistor.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2279, doi. 10.1002/pssb.200404942
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A spectroscopic view of electron-phonon coupling at metal surfaces.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2345, doi. 10.1002/pssb.200404890
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Crystallization in hafnia- and zirconia-based systems.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2268, doi. 10.1002/pssb.200404935
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Electron transport and magnetoresistance in ferromagnetic nanostructures.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2404, doi. 10.1002/pssb.200304871
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Bonding and structure of some high- k oxide:Si interfaces.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2236, doi. 10.1002/pssb.200404939
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Preface: phys. stat. sol. (b) 241/10.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2219, doi. 10.1002/pssb.200490015
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STM study of large organic molecules adsorption on Si(100)-2 × 1.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2353, doi. 10.1002/pssb.200404876
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The role of metallic impurities in oxide semiconductors: first-principles calculations and PAC experiments.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2394, doi. 10.1002/pssb.200304897
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Critical Hamiltonians on one-dimensional disordered lattices.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2419, doi. 10.1002/pssb.200304868
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Use of Wannier-type atomic orbitals in LCAO and plane wave calculations: Chemical bonding in MgO crystal.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. R35, doi. 10.1002/pssb.200409047
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Investigations of conductance of photochromic switching molecules.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2326, doi. 10.1002/pssb.200404941
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Response of Si and InSb to ultrafast laser pulses.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2331, doi. 10.1002/pssb.200404934
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Domain wall resistance in narrow Co wires.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2410, doi. 10.1002/pssb.200304870
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Valence and conduction band offsets of a ZrO<sub>2</sub>/SiO<sub> x</sub>N<sub> y</sub>/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2246, doi. 10.1002/pssb.200404945
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Giant magnetic moment dynamics in Pd.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2415, doi. 10.1002/pssb.200304915
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Non-local versus local neutralization of slow He ions in surface scattering.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2380, doi. 10.1002/pssb.200404916
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Spectroscopic studies of metal high- k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2221, doi. 10.1002/pssb.200404938
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Auger neutralization of He ions on Ag surfaces: surface type and azimuthal orientation dependence.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2367, doi. 10.1002/pssb.200404909
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- Article
Crystalline oxides on semiconductors: a future for the nanotransistor.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2213, doi. 10.1002/pssb.200490014
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Full-band particle-based simulation of SOI and GOI MOSFETs.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2297, doi. 10.1002/pssb.200404940
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Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2253, doi. 10.1002/pssb.200404933
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Grazing incidence collisions of fast protons with insulators: electron emission around the convoy peak.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2374, doi. 10.1002/pssb.200404881
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Angular dispersion of protons transmitted through thin gold films.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2389, doi. 10.1002/pssb.200304862
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High-pressure polymorphism in phosphorus nitrides.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2319, doi. 10.1002/pssb.200404937
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Donor-related photoionization cross-section of GaAs-(Ga, Al)As quantum dots: hydrostatic pressure effects.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2440, doi. 10.1002/pssb.200404908
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Surface dynamics of the layered ruthenate Ca<sub>1.9</sub>Sr<sub>0.1</sub>RuO<sub>4</sub>.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2363, doi. 10.1002/pssb.200404874
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Electrical conductivity of MoS<sub>2</sub> based organic-inorganic nanocomposites.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2444, doi. 10.1002/pssb.200304899
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Base sequence dependence of charge transport via short DNA bridges.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. R46, doi. 10.1002/pssb.200409052
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Theoretical study of the stability of wurtzite, zinc-blende, NaCl and CsCl phases in group IIIB and IIIA nitrides.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2424, doi. 10.1002/pssb.200404910
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The effective thickness, temperature and growth rate behavior of quantum dot ensembles.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. R42, doi. 10.1002/pssb.200409049
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Ferroelectric stability of BaTiO<sub>3</sub> in a crystalline oxide on semiconductor structure.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2287, doi. 10.1002/pssb.200404932
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Surface chemistry effects on vacancy and interstitial annihilation on Si(001).
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2303, doi. 10.1002/pssb.200404943
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Calibration of a pH sensitive buried channel silicon-on-insulator MOSFET for sensor applications.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2291, doi. 10.1002/pssb.200404936
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Anomalous thickness dispersion of unoccupied states in the Cu/Ni/Cu(100) metallic quantum well system.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2358, doi. 10.1002/pssb.200404895
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On the nature of the Fractional Quantum Hall Effect ground state at low fillings.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2429, doi. 10.1002/pssb.200404866
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Ab initio study of ferromagnetism induced by magnetic impurities in rutile TiO<sub>2</sub>.
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- Physica Status Solidi (B), 2004, v. 241, n. 10, p. 2399, doi. 10.1002/pssb.200304869
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