Works matching IS 03701972 AND DT 2003 AND VI 235 AND IP 1

Results: 36

Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 107, doi. 10.1002/pssb.200301543
By:
- Coutinho, J.;
- Torres, V.J.B.;
- Jones, R.;
- Resende, A.;
- Briddon, P.R.
Publication type:
Article
Optical properties of Si-, Ge- and Sn-doped GaN.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 26, doi. 10.1002/pssb.200301525
By:
- Shikanaia, A.;
- Fukahori, H.;
- Kawakami, Y.;
- Hazu, K.;
- Sota, T.;
- Mitani, T.;
- Mukai, T.;
- Fujita, Sg.
Publication type:
Article
Residual donors in wurtzite GaN homoepitaxial layers and heterostructures.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 20, doi. 10.1002/pssb.200301524
By:
- Neu, G.;
- Teisseire-Doninelli, M.;
- Morhain, C.;
- Semond, F.;
- Grandjean, N.;
- Beaumont, B.;
- Frayssinet, E.;
- Knap, W.;
- Witowski, A. M.;
- Sadowski, M. L.;
- Leszczynski, M.;
- Prystawko, P.
Publication type:
Article
Far-infrared optical spectrum of donor impurities in quantum dots in a magnetic field.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 146, doi. 10.1002/pssb.200301529
By:
- Pacheco, M.;
- León, A.;
- Barticevic, Z.
Publication type:
Article
Electronic properties of Si/SiGe ultrathin quantum well superlattices.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 189, doi. 10.1002/pssb.200301356
By:
- Rached, D.;
- Benkhettou, N.;
- Sekkal, N.
Publication type:
Article
Conductivity via impurities in low-doped uncompensated silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 96, doi. 10.1002/pssb.200301531
By:
- Melnikov, A. P.
Publication type:
Article
Hydrogen passivation of the SiGa donor in GaP.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 102, doi. 10.1002/pssb.200301542
By:
- Ulrici, W.;
- Clerjaud, B.;
- Côte, D.
Publication type:
Article
THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 135, doi. 10.1002/pssb.200301536
By:
- Kagan, M. S.;
- Altukhov, I. V.;
- Chirkova, E. G.;
- Sinis, V. P.;
- Troeger, R. T.;
- Ray, S. K.;
- Kolodzey, J.
Publication type:
Article
Resonant interaction of LO phonons with excited donor states in GaN.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 36, doi. 10.1002/pssb.200301530
By:
- Wysmolek, A.;
- Potemski, M.;
- Stepniewski, R.;
- Baranowski, J. M.;
- Look, D. C.;
- Lee, S. K.;
- Han, J. Y.
Publication type:
Article
Study of IR absorption and photoconductivity spectra of thermal double donors in silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 79, doi. 10.1002/pssb.200301535
By:
- Andreev, B. A.;
- Emtsev, V. V.;
- Kryzhkov, D. I.;
- Kuritsyn, D. I.;
- Shmagin, V. B.
Publication type:
Article
Selective magneto-luminescence spectroscopy of donoacceptor pairs in n-GaAs.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 48, doi. 10.1002/pssb.200301541
By:
- Wysmolek, A.
Publication type:
Article
Resonant states in doped quantum wells.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 85, doi. 10.1002/pssb.200301528
By:
- Blom, A.;
- Odnoblyudov, M.A.;
- Yassievich, I.N.;
- Chao, K.A.
Publication type:
Article
Hydrogen as a shallow center in semiconductors and oxides.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 89, doi. 10.1002/pssb.200301539
By:
- Van de Walle, Chris G.
Publication type:
Article
Photoluminescence studies of isotopically enriched silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 3, doi. 10.1002/pssb.200300000
By:
- Karaiskaj, D.;
- Thewalt, M.L.W.;
- Ruf, T.;
- Cardona, M.
Publication type:
Article
Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 40, doi. 10.1002/pssb.200306171
By:
- Korona, K. P.;
- Doradziński, R.;
- Palczewska, M.;
- Pietras, M.;
- Kamińska, M.;
- Kuhl, J.
Publication type:
Article
Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 170, doi. 10.1002/pssb.200301414
By:
- Lengsfeld, P.;
- Brehme, S.;
- Brendel, K.;
- Genzel, Ch.;
- Nickel, N. H.
Publication type:
Article
The Self-Compression of Injected Electron-Hole Plasma in Silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 195, doi. 10.1002/pssb.200301512
By:
- Altukhov, P.D.;
- Kuzminov, E.G.
Publication type:
Article
Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 44, doi. 10.1002/pssb.200301523
By:
- Van Khoi, Le;
- Kossut, J.;
- Gałazka, R.R.
Publication type:
Article
Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 157, doi. 10.1002/pssb.200301420
By:
- Jiang, Y.;
- Jalil, M. B. A.
Publication type:
Article
Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 75, doi. 10.1002/pssb.200301534
By:
- Emtsev, V. V.;
- Ammerlaan, C. A. J.;
- Oganesyan, G. A.;
- Andreev, B. A.;
- Kuritsyn, D. I.;
- Misiuk, A.;
- Surma, B.;
- Londos, C. A.
Publication type:
Article
Donor centers in zinc germanium diphosphide produced by electron irradiation.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 151, doi. 10.1002/pssb.200301545
By:
- Gehlhoff, W.;
- Azamat, D.;
- Hoffmann, A.
Publication type:
Article
Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 54, doi. 10.1002/pssb.200301527
By:
- Zheng, W.-M.;
- Halsall, M. P.;
- Harrison, P.;
- Wells, J.-P. R.;
- Bradley, I. V.;
- Steer, M. J.
Publication type:
Article
Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 115, doi. 10.1002/pssb.200301538
By:
- Nakanishi, A.;
- Fukata, N.;
- Suezawa, M.
Publication type:
Article
Rostislav Kaischev (1908-2002).
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 9, doi. 10.1002/pssb.200301549
Publication type:
Article
Effect of incident probe on HAADF STEM images.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 179, doi. 10.1002/pssb.200301354
By:
- Watanabe, K.;
- Nakanishi, N.;
- Yamazaki, T.;
- Kawasaki, M.;
- Hashimoto, I.;
- Shiojiri, M.
Publication type:
Article
Photoluminescence studies of isotopically enriched silicon.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 63, doi. 10.1002/pssb.200301540
By:
- Karaiskaj, D.;
- Thewalt, M.L. W.;
- Ruf, T.;
- Cardona, M.
Publication type:
Article
'Some like it shallower' - p-type doping in SiC.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 139, doi. 10.1002/pssb.200301522
By:
- Deák, Peter;
- Aradi, Bálint;
- Gali, Adam;
- Gerstmann, Uwe
Publication type:
Article
Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 58, doi. 10.1002/pssb.200301533
By:
- Alt, H. Ch.;
- Gomeniuk, Y.;
- Kretzer, U.
Publication type:
Article
Nitrogen-hydrogen complexes in GaAs and GaAs1- xN x alloys.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 121, doi. 10.1002/pssb.200301544
By:
- Kim, Yong-Sung;
- Chang, K.J.
Publication type:
Article
DX behaviour of Si donors in AlGaN alloys.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 13, doi. 10.1002/pssb.200301521
By:
- Brandt, Martin S.;
- Zeisel, Roland;
- Gönnenwein, Sebastian T. B.;
- Bayerl, Martin W.;
- Stutzmann, Martin
Publication type:
Article
Dynamics of trapping on donors and relaxation of the B-exciton in GaN.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 31, doi. 10.1002/pssb.200301526
By:
- Korona, K. P.;
- Wysmołek, A.;
- Stępniewski, R.;
- Potemski, M.;
- Kuhl, J.;
- Baranowski, J. M.;
- Martinez, G.;
- Grzegory, I.;
- Porowski, S.
Publication type:
Article
N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 111, doi. 10.1002/pssb.200301537
By:
- Ohmura, Y.;
- Takahashi, M.;
- Suzuki, M.;
- Emura, A.;
- Sakamoto, N.;
- Meguro, T.;
- Yamamoto, Y.
Publication type:
Article
Scientific misconduct: Past, present, and future ...
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 11, doi. 10.1002/pssb.200301548
By:
- Stutzmann, Martin;
- Hildebrandt, Stefan
Publication type:
Article
Phase transitions and amorphization of CaWO4 at high pressure.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 162, doi. 10.1002/pssb.200301412
By:
- Errandonea, Daniel;
- Somayazulu, Maddury;
- Häusermann, Daniel
Publication type:
Article
Optically pumped terahertz semiconductor bulk lasers.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 126, doi. 10.1002/pssb.200301532
By:
- Pavlov, S. G.;
- Hübers, H.-W.;
- Orlova, E. E.;
- Zhukavin, R. Kh.;
- Riemann, H.;
- Nakata, H.;
- Shastin, V. N.
Publication type:
Article
Light propagation- and many-particle-induced non-Lorentzian lineshapes in semiconductor nanooptics.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 1, p. 200, doi. 10.1002/pssb.200301550
By:
- Förstner, J.;
- Ahn, K. J.;
- Danckwerts, J.;
- Schaarschmidt, M.;
- Waldmüller, I.;
- Weber, C.;
- Knorr, A.
Publication type:
Article

Works matching IS 03701972 AND DT 2003 AND VI 235 AND IP 1

Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon.

Optical properties of Si-, Ge- and Sn-doped GaN.

Residual donors in wurtzite GaN homoepitaxial layers and heterostructures.

Far-infrared optical spectrum of donor impurities in quantum dots in a magnetic field.

Electronic properties of Si/SiGe ultrathin quantum well superlattices.

Conductivity via impurities in low-doped uncompensated silicon.

Hydrogen passivation of the Si<sub>Ga</sub> donor in GaP.

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.

Resonant interaction of LO phonons with excited donor states in GaN.

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon.

Selective magneto-luminescence spectroscopy of donoacceptor pairs in n-GaAs.

Resonant states in doped quantum wells.

Hydrogen as a shallow center in semiconductors and oxides.

Photoluminescence studies of isotopically enriched silicon.

Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN.

Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon.

The Self-Compression of Injected Electron-Hole Plasma in Silicon.

Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors.

Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure.

Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures.

Donor centers in zinc germanium diphosphide produced by electron irradiation.

Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells.

Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen.

Rostislav Kaischev (1908-2002).

Effect of incident probe on HAADF STEM images.

Photoluminescence studies of isotopically enriched silicon.

'Some like it shallower' - p-type doping in SiC.

Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2.

Nitrogen-hydrogen complexes in GaAs and GaAs<sub>1- x</sub>N<sub> x</sub> alloys.

DX behaviour of Si donors in AlGaN alloys.

Dynamics of trapping on donors and relaxation of the B-exciton in GaN.

N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering.

Scientific misconduct: Past, present, and future ...

Phase transitions and amorphization of CaWO<sub>4</sub> at high pressure.

Optically pumped terahertz semiconductor bulk lasers.

Light propagation- and many-particle-induced non-Lorentzian lineshapes in semiconductor nanooptics.