Works matching DE "ION implantation"

Results: 1397

Implanter, RTP system issues for ultrashallow junction formation.

Published in:

Solid State Technology, 2001, v. 44, n. 9, p. 77

By:

Amen, Mike;
Hebb, Jeffrey

Publication type:

Article

Japanese companies design multifunction minifab tools.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 83

By:

Okumura, Katsuya;
Mikata, Yu-ichi;
Suguro, Kyoichi;
Tsunashima, Yoshitaka;
Shimazaki, Ayako

Publication type:

Article

Conventional beamline implantation of decaborane.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 77

By:

Vella, Michael C.

Publication type:

Article

MRS Spring Meeting: More science, less art.

Published in:: Solid State Technology, 2001, v. 44, n. 6, p. 42
Publication type:: Article

Critical doping trends driving advanced USJ metrology.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 69

By:

Borden, Peter

Publication type:

Article

A new era for high-current, low-energy ion implantation.

Published in:

Solid State Technology, 2000, v. 43, n. 11, p. 103

By:

Parrill, Thomas M.;
Ameen, Michael S.;
Graf, Michael;
Mazzola, Richard

Publication type:

Article

A closer look at some of the most difficult processing challenges.

Published in:

Solid State Technology, 2000, v. 43, n. 9, p. 81

By:

Burggraaf, Pieter

Publication type:

Article

Low-energy ion implant.

Published in:: Solid State Technology, 2000, v. 43, n. 8, p. 135
Publication type:: Article

Hot topics at MRS: low-k, dopant profiling, copper.

Published in:

Solid State Technology, 2000, v. 43, n. 6, p. 50

By:

Demmin, Jeff;
Haavind, Bob

Publication type:

Article

An improved secondary electron flood helps control ion implant charge.

Published in:

Solid State Technology, 2000, v. 43, n. 4, p. 63

By:

Fleming, David A.;
Mullis, Celeste

Publication type:

Article

Pressure measurement in ion implanters.

Published in:

Solid State Technology, 2000, v. 43, n. 2, p. 51

By:

Bopp, Eric

Publication type:

Article

Formation of ultra-shallow junctions by ion implantation and RTA.

Published in:

Solid State Technology, 1998, v. 41, n. 12, p. 43

By:

Foad, Majeed A.;
Jennings, Dean

Publication type:

Article

Hazardous gases emitted by ion implanters: Characterization and abatement.

Published in:

Solid State Technology, 1998, v. 41, n. 10, p. 113

By:

Arno, Josep;
Hayes, Michael

Publication type:

Article

Japan.

Published in:: Solid State Technology, 1998, v. 41, n. 7, p. 38
Publication type:: Article

Implantation damage and transient enhanced diffusion modeling.

Published in:

Solid State Technology, 1998, v. 41, n. 2, p. 97

By:

Giles, Martin D.;
Shaofeng Yu;
Kennel, Harold W.;
Packan, Paul A.

Publication type:

Article

Ultrashallow junction formation by ion implant and RTA.

Published in:

Solid State Technology, 1997, v. 40, n. 12, p. 71

By:

Downey, Daniel F.;
Osburn, Carlton M.

Publication type:

Article

Positive pulses in HiPIMS enhance Ti-PEEK interface formation.

Published in:

Surface Engineering, 2025, v. 41, n. 2, p. 259, doi. 10.1177/02670844241310431

By:

Cvrček, Ladislav;
Nehasil, Václav;
Buřil, Matěj

Publication type:

Article

Photoelectrochemical and photocatalytic activities of improved TiO2 nanotubes using Ag+ ion implantation and RGO deposition.

Published in:

Surface Engineering, 2022, v. 38, n. 1, p. 79, doi. 10.1080/02670844.2022.2045786

By:

Liao, Bin;
Chen, Lin;
Luo, Jun;
Pang, Pan;
Wang, Guoliang

Publication type:

Article

Tribological behaviour of titanium alloy modified by carbon-DLC composite film.

Published in:

Surface Engineering, 2015, v. 31, n. 12, p. 934, doi. 10.1179/1743294414Y.0000000452

By:

Wang, S.;
Wang, F.;
Liao, Z.;
Wang, Q.;
Tyagi, R.;
Liu, W.

Publication type:

Article

Structure evolution and mechanical properties of Ta-Nb-Ti-W-N multielement films.

Published in:

Surface Engineering, 2014, v. 30, n. 11, p. 842, doi. 10.1179/1743294414Y.0000000329

By:

Feng, X. G.;
Ma, X. X.;
Tang, G. Z.;
Zhou, H.

Publication type:

Article

Effects of carbon and nitrogen ion implantations on surface and tribological properties of Ti-Al-Si-N coatings.

Published in:

Surface Engineering, 2012, v. 28, n. 2, p. 149, doi. 10.1179/1743294411Y.0000000071

By:

Shum, P W;
Xu, Y F;
Zhou, Z F;
Li, K Y

Publication type:

Article

Tribological behaviour of plasma based low energy nitrogen ion implanted AISI 316 austenitic stainless steel against same stainless steel counterface.

Published in:

Surface Engineering, 2010, v. 26, n. 4, p. 277, doi. 10.1179/026708410X12671039164606

By:

Lei, M. K.;
Zhou, Q.;
Ou, Y. X.;
Song, T. K.;
Guo, Y.

Publication type:

Article

Enhancement of surface properties of AISI 8620 by plasma immersion ion implantation.

Published in:

Surface Engineering, 2008, v. 24, n. 3, p. 176, doi. 10.1179/174329408X281803

By:

Saklakoglu, I. E.

Publication type:

Article

Enhancement of hardness and corrosion resistance of low alloy high carbon steel by plasma immersion ion implantation.

Published in:

Surface Engineering, 2008, v. 24, n. 1, p. 4, doi. 10.1179/174329407X265875

By:

Rao, K. Ram Mohan;
Mukherjee, S.;
Roy, S. K.;
Manna, I.

Publication type:

Article

Tribological behaviour of plasma immersion ion implanted AISI 304 stainless steel against polymer and ceramic counterfaces.

Published in:

Surface Engineering, 2007, v. 23, n. 4, p. 257, doi. 10.1179/174329407X215177

By:

Saklakoğlu, N.;
Saklakoğlu, I. E.;
Ceyhun, V.;
Ağaçhan, N.;
Short, K. T.;
Collins, G. A.

Publication type:

Article

New Method for Preparing Cubic Boron Nitride Hardened Layers.

Published in:

Surface Engineering, 2003, v. 19, n. 5, p. 369, doi. 10.1179/026708403225007554

By:

Wang, J.;
Liu, X.;
Wang, X.;
Chen, Y.

Publication type:

Article

Abstracts.

Published in:: Surface Engineering, 2003, v. 19, n. 5, p. 395, doi. 10.1179/026708403322703076
Publication type:: Article

Structural and Morphological Modifications Induced by Fe Ion Implantation in Sb2Te3 Thin Films.

Published in:

Macromolecular Symposia, 2021, v. 399, n. 1, p. 1, doi. 10.1002/masy.202100079

By:

Yadav, Jyoti;
M. Divakaran, Anoop;
Yadav, Nisha;
Singh, Rini;
Rao, N. Srinivasa;
Singh, Fouran;
Ichikawa, Takayuki;
Jain, Ankur;
Awasthi, Kamlendra;
Kumar, Manoj

Publication type:

Article

Improvement in Oxidation Resistance of IMI834: Comparison Between Implantation and Coating; a Quest.

Published in:

Macromolecular Symposia, 2015, v. 347, n. 1, p. 58, doi. 10.1002/masy.201400036

By:

Sinha, S.K.;
Nair, K.G.M.;
Tyagi, A.K.

Publication type:

Article

Nitrogen Ion Beam Modification of Alumina for Hard Tissue Implants.

Published in:

Macromolecular Symposia, 2015, v. 347, n. 1, p. 39, doi. 10.1002/masy.201400037

By:

Shikha, Deep;
Jha, Usha;
Sinha, S.K.;
Nair, K. G. M.;
Tyagi, A. K.

Publication type:

Article

Synthesis of Layer-Tunable Graphene: A Combined Kinetic Implantation and Thermal Ejection Approach.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 24, p. 3666, doi. 10.1002/adfm.201500981

By:

Wang, Gang;
Zhang, Miao;
Liu, Su;
Xie, Xiaoming;
Ding, Guqiao;
Wang, Yongqiang;
Chu, Paul K.;
Gao, Heng;
Ren, Wei;
Yuan, Qinghong;
Zhang, Peihong;
Wang, Xi;
Di, Zengfeng

Publication type:

Article

Photo-Seebeck measurement of Bi-doped amorphous germanium telluride oxide film.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 8, p. 1, doi. 10.1007/s10854-023-10072-y

By:

Gholizadeh, A. Baset;
Byrne, Conor;
Walton, Alex S.;
Smith, Richard;
England, Jonathan;
Craig, Christopher;
Hewak, Dan;
Curry, Richard J.

Publication type:

Article

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15679, doi. 10.1007/s10854-022-08471-8

By:

Omotoso, Ezekiel;
Meyer, Walter E.;
Igumbor, Emmanuel;
Hlatshwayo, Thulani T.;
Prinsloo, Aletta R. E.;
Auret, F. Danie;
Sheppard, Charles J.

Publication type:

Article

Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6816, doi. 10.1007/s10854-022-07860-3

By:

Dassi, Minaxi;
Madan, Jaya;
Pandey, Rahul;
Sharma, Rajnish

Publication type:

Article

Temperature response of non-hysteresis magnetic switching by electrical current.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6681, doi. 10.1007/s10854-022-07842-5

By:

Li, Yanru;
Yang, Meiyin;
Luo, Jun

Publication type:

Article

Effect of Ar+ ion implantation to enhance non-linear optical property on the l-proline-doped potassium hydrogen phthalate single crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27777, doi. 10.1007/s10854-021-07160-2

By:

Lalitha, P.;
Arumugam, S.;
Pandurangan, A.;
Krishna, J. B. M.;
Sinthiya, A.

Publication type:

Article

Boron and barium incorporation at the 4H-SiC/SiO2 interface using a laser multi-charged ion source.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 16079, doi. 10.1007/s10854-021-06156-2

By:

Haider, Md.;
Shaim, A.;
Elsayed-Ali, Hani E.

Publication type:

Article

The influence of Cu ion implantation on the morphology and optical properties of TiO2 nanogranular film.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7455, doi. 10.1007/s10854-021-05458-9

By:

Wang, Gang;
Jing, Yaqi;
Dai, Haitao;
Liu, Changlong

Publication type:

Article

Impact of N+ ion implantation on the properties of ZnSe thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6185, doi. 10.1007/s10854-021-05335-5

By:

Gupta, Tripti;
Chauhan, R. P.

Publication type:

Article

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17892, doi. 10.1007/s10854-020-04342-2

By:

Piętak, Karolina;
Złotnik, Sebastian;
Rozbiegała, Ewelina;
Michałowski, Paweł P.;
Wójcik, Marek;
Gaca, Jarosław;
Rudziński, Mariusz

Publication type:

Article

Implantation of low-energy Ni12+ ions to change structural and strength characteristics of ceramics based on SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2246, doi. 10.1007/s10854-019-02756-1

By:

Tinishbaeva, K.;
Kadyrzhanov, K. K.;
Kozlovskiy, A. L.;
Uglov, V. V.;
Zdorovets, M. V.

Publication type:

Article

Opto-electromagnetic properties of carbon-doped zinc-oxide prepared using electrically induced crystallization and ion implantation process for gas sensor application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 144, doi. 10.1007/s10854-019-02325-6

By:

Liu, Tai-Hsiang;
Hung, Fei-Yi;
Chien, Tao;
Chen, Kuan-Jen

Publication type:

Article

A novel method for source/drain ion implantation for 20 nm FinFETs and beyond.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 98, doi. 10.1007/s10854-019-01274-4

By:

Qin, Changliang;
Yin, Huaxiang;
Wang, Guilei;
Zhang, Yanbo;
Liu, Jinbiao;
Zhang, Qinzhu;
Zhu, Huilong;
Zhao, Chao;
Radamson, Henry H.

Publication type:

Article

Design impact on the performance of Ge PIN photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 18, doi. 10.1007/s10854-018-00650-w

By:

Zhao, Xuewei;
Moeen, M.;
Toprak, M. S.;
Wang, Guilei;
Luo, Jun;
Ke, Xingxing;
Li, Zhihua;
Liu, Daoqun;
Wang, Wenwu;
Zhao, Chao;
Radamson, Henry H.

Publication type:

Article

X-ray induced Sm-ion valence conversion in Sm-ion implanted fluoroaluminate glasses towards high-dose radiation measurement.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16740, doi. 10.1007/s10854-019-01212-4

By:

Chicilo, Farley;
Koughia, Cyril;
Curry, Richard;
Gwilliam, Russel;
Ahumada-Lazo, Ruben;
Edgar, Andy;
Binks, David J.;
Chapman, Dean;
Kasap, Safa

Publication type:

Article

Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12577, doi. 10.1007/s10854-019-01618-0

By:

Wang, Xing;
Liu, Hongxia;
Zhao, Lu;
Wang, Yongte;
Wang, Shulong

Publication type:

Article

Design and preparation of integrated voltage divider for silicon drift detector by ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10152, doi. 10.1007/s10854-019-01351-8

By:

Liu, Sai;
Xue, Yuming;
Jia, Rui;
Tao, Ke;
Jiang, Shuai;
Wu, Yiqing;
Sun, Haoyu;
Guo, Qing;
Zhang, Liming;
Feng, Shaojun

Publication type:

Article

High-resistance voltage dividers fabricated by thin polysilicon films in silicon drift detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 6617, doi. 10.1007/s10854-019-00969-y

By:

Jiang, Shuai;
Jia, Rui;
Tao, Ke;
Wu, Yiqing;
Liu, Sai

Publication type:

Article

Wetting and interfacial behavior of molten Al-Si alloys on SiC monocrystal substrates: effects of Cu or Zn addition and Pd ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 20, p. 17416, doi. 10.1007/s10854-018-9839-9

By:

Huang, Zhikun;
Xu, Wenlong;
Liu, Guiwu;
Wang, Tingting;
Zhang, Xiangzhao;
Qiao, Guanjun

Publication type:

Article

Optical characterization of the HgCdTe-based composite structure obtained by Ag ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15708, doi. 10.1007/s10854-018-9177-y

By:

Smirnov, A. B.;
Savkina, R. K.;
Nasieka, Iu. M.;
Strelchuk, V. V.;
Demchenko, I. N.;
Kryshtab, T.

Publication type:

Article